Page 1
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN4683
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For high-frequency amplification/For general amplification
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SC2404+2SB709A
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Tr1
Tr2
Overall
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
C
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
30 V
20 V
3V
15 mA
–60 V
–50 V
–7 V
–100 mA
–200 mA
200 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: ER
Internal Connection
61
5
43
Tr1
2
Tr2
Unit: mm
1
Page 2
Composite Transistors XN4683
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Emitter to base voltage V
Forward current transfer ratio h
Base to emitter voltage V
CBO
EBO
FE1
BE
Feedback capacitance Cre VCB = 6V, IE = –1mA, f = 10.7MHz 0.8 1 pF
Transition frequency f
T
Noise figure NF VCB = 6V, IE = –1mA, f = 100MHz 3.3 dB
Power gain PG VCB = 6V, IE = –1mA, f = 100MHz 24 dB
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
I
I
V
CBO
CEO
FE
T
CBO
CEO
EBO
CE(sat)
ob
IC = 10µA, IE = 0 30 V
IE = 10µA, IC = 0 3 V
VCE = 6V, IC = –1mA 40 260
VCB = 6V, IE = –1mA 720 mV
VCB = 6V, IE = –1mA, f = 200MHz 450 650 MHz
IC = –10µA, IE = 0 –60 V
IC = –2mA, IB = 0 –50 V
IE = –10µA, IC = 0 –7 V
VCB = –20V, IE = 0 – 0.1 µA
VCE = –10V, IB = 0 –100 µA
VCE = –10V, IC = –2mA 160 460
IC = –100mA, IB = –10mA – 0.3 – 0.5 V
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
VCB = –10V, IE = 0, f = 1MHz 2.7 pF
2
Page 3
Composite Transistors XN4683
Common characteristics chart
— Ta
P
T
400
)
mW
(
300
T
200
100
Total power dissipation P
0
0 16040 12080
Ambient temperature Ta (˚C
Characteristics charts of Tr1
)
— V
I
C
CE
12
10
)
mA
(
8
C
6
4
Collector current I
2
0
0 4 8 12 16
Collector to emitter voltage VCE (V
V
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Ta=75˚C
25˚C
–25˚C
— I
Ta=25˚C
IB=100µA
80µA
60µA
40µA
20µA
)
C
IC/IB=10
Collector to emitter saturation voltage V
0.01
0.1 0.3
1 3 10 30 100
Collector current IC (mA
)
IC — I
B
12
10
)
mA
(
8
C
6
4
Collector current I
2
0
0 40 80 120 160
VCE=6V
Ta=25˚C
Base current IB (µA
hFE — I
360
FE
300
240
180
120
60
Forward current transfer ratio h
0
0.1 0.3
1 3 10 30 100
C
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
VCE=6V
)
IC — V
30
25
)
mA
(
C
Collector current I
20
15
10
5
0
02.01.61.20.80.4
Ta=75˚C –25˚C
BE
VCE=6V
25˚C
Base to emitter voltage VBE (V
fT — I
E
1200
)
1000
MHz
(
T
800
600
400
200
Transition frequency f
0
–0.1 –0.3 –1 –3 –10 –30 –100
VCB=6V
Ta=25˚C
Emitter current IE (mA
)
)
3
Page 4
Composite Transistors XN4683
Zrb — I
120
)
Ω
(
100
rb
80
60
40
20
E
Reverse transfer impedance Z
0
–0.1 –0.3 –1 –3 –10
Emitter current IE (mA
)
(
PG — I
40
35
30
dB
25
E
f=100MHz
R
Ta=25˚C
=10V
V
CE
6V
VCB=6V
f=2MHz
Ta=25˚C
)
=50Ω
g
Cre — V
)
2.4
pF
(
re
2.0
1.6
1.2
0.8
0.4
Common emitter reverse transfer capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to emitter voltage VCE (V
NF — I
12
10
CE
E
IC=1mA
f=10.7MHz
Ta=25˚C
f=100MHz
R
=50Ω
g
Ta=25˚C
)
)
dB
(
8
Cob — V
1.2
CB
)
pF
(
1.0
ob
0.8
0.6
0.4
0.2
Collector output capacitance C
0
03052510 2015
Collector to base voltage VCB (V
f=1MHz
I
=0
E
Ta=25˚C
)
20
15
Power gain PG
10
5
0
–0.1 –0.3
–1 –3 –10 –30 –100
Emitter current IE (mA
Characteristics charts of Tr2
— V
I
C
CE
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
IB=–300µA
–250µA
–200µA
–150µA
Ta=25˚C
–100µA
–50µA
6
=6V, 10V
V
4
CE
Noise figure NF
2
0
–0.1 –0.3
)
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
–1 –3 –10 –30 –100
Emitter current IE (mA
IC — I
B
VCE=–5V
Ta=25˚C
)
–400
–350
)
–300
µA
(
–250
B
–200
–150
Base current I
–100
–50
IB — V
BE
VCE=–5V
Ta=25˚C
0
0 –18–2 –4 –6 –8 –10 –12 –14 –16
Collector to emitter voltage VCE (V
4
0
0 –100 –200 –300 –400
)
Base current IB (µA
)
0
0 –0.4 –0.8 –1.2 –1.6
Base to emitter voltage VBE (V
)
Page 5
Composite Transistors XN4683
IC — V
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –2.0–1.6–1.2–0.8–0.4
Ta=75˚C –25˚C
Base to emitter voltage VBE (V
fT — I
160
VCB=–10V
Ta=25˚C
140
)
MHz
120
(
T
100
25˚C
BE
E
VCE=–5V
–10
)
V
(
–3
CE(sat)
–1
–0.3
–0.1
–0.03
–0.01
–0.003
V
CE(sat)
— I
25˚C
C
Ta=75˚C
–25˚C
IC/IB=10
hFE — I
600
FE
500
400
Ta=75˚C
300
200
100
Forward current transfer ratio h
25˚C
–25˚C
C
VCE=–10V
Collector to emitter saturation voltage V
–0.001
–1 –3
)
8
)
pF
7
(
ob
6
5
–10 –30 –100 –300 –1000
Collector current IC (mA
Cob — V
CB
f=1MHz
=0
I
E
Ta=25˚C
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
80
60
40
Transition frequency f
20
0
0.1 0.3
1 3 10 30 100
Emitter current IE (mA
4
3
2
1
Collector output capacitance C
0
–2
–3
–1 –5
)
Collector to base voltage VCB (V
–10
–20
–30
–50
–100
)
5
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