Datasheet XN04604 Datasheet (Panasonic)

Composite Transistors

2.8

+0.2 –0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25 –0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN4604

Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)

For amplification of low frequency output

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD1328+2SB970

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage Collector to emitter voltage

Tr1

Emitter to base voltage Collector current I Peak collector current Collector to base voltage Collector to emitter voltage

Tr2

Emitter to base voltage Collector current I Peak collector current Total power dissipation Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

j

T

stg

25 V 20 V 12 V

0.5 A 1A

–15 V –10 V

–7 V

– 0.5 A

–1 A 300 mW 150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2) 2 : Base (Tr2) 5 : Base (Tr1) 3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74 Mini Type Package (6–pin)

Marking Symbol: 5I

Internal Connection

Tr1

61

5

43

Tr2

Unit: mm

2

1

Composite Transistors XN4604

Electrical Characteristics (Ta=25˚C)

■

●

Tr1

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector cutoff current I

Forward current transfer ratio

Collector to emitter saturation voltage Base to emitter saturation voltage V Transition frequency f Collector output capacitance C ON Resistance R

●

Tr2

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector cutoff current I

Forward current transfer ratio

Collector to emitter saturation voltage Base to emitter saturation voltage V Transition frequency f Collector output capacitance C

*1

Pulse measurement

*2

Ron test circuit

CBO

h h V

T

CBO

h h V

T

CBO

CEO

EBO

FE1

FE2

CE(sat)

BE(sat)

ob

*2

on

CBO

CEO

EBO

FE1

FE2

CE(sat)

BE(sat)

ob

IB=1mA

R

IC = 10µA, IE = 0 25 V IC = 1mA, IB = 0 20 V IE = 10µA, IC = 0 12 V VCB = 25V, IE = 0 0.1 µA VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A

*1

200 800

60 IC = 0.5A, IB = 20mA 0.13 0.4 V IC = 0.5A, IB = 20mA 1.2 V VCB = 10V, IE = –50mA, f = 200MHz

200 MHz

VCB = 10V, IE = 0, f = 1MHz 10 pF

1.0 Ω

IC = –10µA, IE = 0 –15 V IC = –1mA, IB = 0 –10 V IE = –10µA, IC = 0 –7 V VCB = –10V, IE = 0 – 0.1 µA VCE = –2V, IC = –0.5A VCE = –2V, IC = –1A

*1

100 350

60 IC = –0.4A, IB = –8mA – 0.16 – 0.3 V IC = –0.4A, IB = –8mA – 0.8 –1.2 V VCB = –10V, IE = 50mA, f = 200MHz

130 MHz

VCB = –10V, IE = 0, f = 1MHz 22 pF

1kΩ

f=1kHz V=0.3V

V

A

V

B

= ✕1000(Ω)

on

VA–V

B

V

B

V

2

Composite Transistors XN4604

Common characteristics chart

— Ta

P

T

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

Characteristics charts of Tr1

)

— V

I

C

CE

1.2

1.0

) A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0615243

Collector to emitter voltage VCE (V

hFE — I

C

1200

FE

1000

800

Ta=75˚C

600

400

200

Forward current transfer ratio h

0

0.01 0.03

25˚C

–25˚C

0.1 0.3 1 3 10

Collector current IC (A

Ta=25˚C

IB=4.0mA

3.5mA

3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

VCE=2V

)

V

— I

CE(sat)

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

Collector to emitter saturation voltage V

0.01

0.01 0.03

)

Ta=75˚C

25˚C

0.1 0.3 1 3 10

Collector current IC (A

fT — I

400

350

) MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

–1 –3 –10

Emitter current IE (mA

–25˚C

C

E

–30

–20–5–50

IC/IB=25

)

VCB=10V Ta=25˚C

)

100

)

V

(

30

BE(sat)

10

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

24

) pF

(

20

ob

16

12

Collector output capacitance C

–100–2

V

— I

3

Ta=–25˚C

1

0.01 0.03

BE(sat)

75˚C

0.1 0.3 1 3 10

C

25˚C

Collector current IC (A

Cob — V

8

4

0

3 10 30 100220550

1

CB

Collector to base voltage VCB (V

IC/IB=10

)

f=1MHz

=0

I

E

Ta=25˚C

)

3

Composite Transistors XN4604

Characteristics charts of Tr2

— V

I

C

CE

–1.2

–1.0

)

A

(

–0.8

C

–0.6

–0.4

Collector current I

–0.2

0

0–6–1 –5–2 –4–3

Collector to emitter voltage VCE (V

hFE — I

C

600

FE

500

400

Ta=75˚C

25˚C

300

–25˚C

200

100

Forward current transfer ratio h

0

–0.01 –0.03

–0.1 –0.3 –1 –3 –10

Collector current IC (A

Ta=25˚C

IB=–10mA

–9mA –8mA –7mA –6mA

–5mA –4mA –3mA

–2mA

–1mA

VCE=–2V

)

V

— I

BE(sat)

–100

)

V

(

–30

BE(sat)

–10

–3

Ta=–25˚C

–1

–0.3

–0.1

–0.03

Base to emitter saturation voltage V

–0.01

–0.01 –0.03

)

75˚C

–0.1 –0.3 –1 –3 –10

Collector current IC (A

fT — I

200

)

160

MHz

(

T

120

80

40

Transition frequency f

0

1 3 10 30 100220550

Emitter current IE (mA

25˚C

E

C

IC/IB=50

VCB=–10V Ta=25˚C

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

Collector to emitter saturation voltage V

–0.01

–0.01 –0.03

)

80

)

pF

70

(

ob

60

50

40

30

20

10

Collector output capacitance C

0

)

V

— I

CE(sat)

25˚C

–0.1 –0.3 –1 –3 –10

C

IC/IB=50

Ta=75˚C

–25˚C

Collector current IC (A

–1

Cob — V

–3 –10

CB

f=1MHz I

=0

E

Ta=25˚C

–30

–5 –50

–20

Collector to base voltage VCB (V

)

–100–2

)

4