Datasheet XC6604 Datasheet (TOREX)

■

XC6604 Series

ETR03071-001b

0.5V Low Input, 1A High Speed LDO Regulator withAdjustable Current Limit

GENERAL DESCRIPTION

The XC6604 series is a low voltage input (0.5V) operation and provides high accuracy ±15mV / ±20mV and can supply large

current efficiently due to its ultra low on-resistance even at low output voltages.

The series is ideally suited to the applications which require high current in low input/output voltages and consists of a N-ch driver transistor, a voltage reference, an error amplifier, a current limiter, a fold-back circuit, a thermal shutdown (TSD) circuit, an under voltage lock out (UVLO) circuit, a soft-start circuit and a phase compensation circuit. Output voltage is selectable in 0.1V increments within a range of 0.5V to 1.8V using laser trimming technology and ceramic capacitors can be used for the output stabilization capacitor (C voltage drops as well as the output current is decreased as a function of the foldback circuit. The current limit can be adjustable with connecting a resistor to the I

The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor

) to be discharged via the internal switch. As a result the V

(C

L

The CE pull-down function keeps the IC to be in stand-by mode even if the CE pin is left open.

■APPLICATIONS

● Mobile phones / Smart Phones

● Digital still cameras / Video cameras

● Note PCs / Tablet PCs

● E-book Readers

● Wireless LAN

■TYPICAL APPLICATION CIRCUIT

pin.

LIM

). When the output current reaches the current limit, the output

L

pin quickly returns to the VSS level.

OUT

FEATURES

Maximum Output Current

ON Resistance Bias Voltage Range Input Voltage Range Output Voltage Range Output Voltage Accuracy

Ripple Rejection

Low Power Consumption Stand-by Current Under-voltage Lockout Thermal Shutdown Protection Circuit Function

CE Pull-Down (Active High)

C

Operating Ambient Temperature Output Capacitor Packages

Environmentally Friendly

1A (1.3A Limit)

: : 0.15Ω＠V : 2.5V～6.0V : 0.5V～3.0V : 0.5V～1.8V (0.1V increments) : ±0.015V＠V

±0.020V＠V

: 60dB＠f=1kHz (V

75dB＠f=1kHz (V : 100μA (V : 0.01μA (V

1.8V (V

: : 150℃＠detect, 125℃＠release

Foldback Current Limit, TSD, UVLO

:

Soft-start

:

High Speed Discharge

L

: -40℃～+85℃ : Ceramic Capacitor Compatible (2.2μF)

USP-6C, SOT-26W

:

EU RoHS Compliant, Pb Free

:

=3.6V, V

BIAS

＜1.2V

OUT

≧1.2V

OUT

), 6.5μA (VIN)＠V

BIAS

), 0.01μA (VIN)

BIAS

), 0.4V (VIN)

BIAS

OUT

BIAS_PSRR

IN_PSRR

■TYPICAL PERFORMANCE

CHARACTERISTICS

XC6604x121MR-G

1.4

1.2

(V)

OUT

1

0.8

0.6

0.4

0.2

Output Voltage: V

0

0.0 0.5 1.0 1.5

C

BIAS=CIN

Output Current: I

V

=3.6V, VIN=1.5V

BIAS=VCE

=1.0μF, CL=2.2μF, Ta=25℃

RLIM2=0kΩ RLIM2=22kΩ RLIM2=56kΩ RLIM2=120kΩ

(A)

OUT

=1.2V

)

OUT

=1.2V

1/30

XC6604 Series

■BLOCK DIAGRAMS

Type A

Type B

■PRODUCT CLASSIFICATION

●Ordering Information

XC6604①②③④⑤⑥-⑦

DESIGNATOR ITEM SYMBOL DESCRIPTION

①

②③

④

⑤⑥-⑦

(*1)

The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.

(*1)

Output Voltage Accuracy 1

Packages (Order Unit)

Type

Output Voltage

●Selection Guide

TYPE SOFT-START

CURRENT

LIMITTER

THERMAL

SHUTDOWN

A Yes Adjustable Yes Yes Yes Yes

B No Adjustable Yes Yes Yes Yes

A B

Refer to Selection Guide

05～18 e.g. 1.2V → ②=1, ③=2

±0.015V (V

＜1.2V), ±0.020V (V

OUT

ER-G USP-6C (3,000/Reel)

MR-G SOT-26W (3,000/Reel)

UVLO

CE PULL-DOWN

RESISTOR

≧1.2V)

OUT

CL AUTO DISCHARGE

2/30

XC6604

Series

■PIN CONFIGURATION

*The dissipation pad for the USP-6C package should be solder-plated in recommended mount pattern and metal masking so as to enhance

mounting strength and heat release. If the pad needs to be connected to other pins, it should be connected to the V

(No. 2) pin.

SS

■PIN ASSIGNMENT

PIN NUMBER

PIN NAME FUNCTIONS

USP-6C SOT-26W

1 6 V

Power Supply Input

BIAS

2 5 VSS Ground

3 4 VIN Driver Transistor Input

4 3 V

5 2 I

Output

OUT

Current Limit Resistance Connection

LIM

6 1 CE ON/OFF Control

■FUNCTION CHART

PIN NAME SIGNAL STATUS

L Stand-by

CE

H Active

OPEN Stand-by

3/30

XC6604 Series

■ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNITS

Ta =2 5℃

Bias Voltage V

Input Voltage VIN

Output Current I

Output Voltage

(*2)

V

CE Input Voltage VCE

I

Pin Voltage

LIM

(*3)

I

USP-6C

Power Dissipation

SOT-26W

Operating Ambient Temperature Topr

Storage Temperature Tstg

* All voltages are described based on the VSS pin.

(*1)

I

≦Pd/（VIN-V

OUT

(*2)

The maximum value should be either V

(*3)

The maximum value should be either VIN+0.3 or +6.5 in the lowest.

(*4)

The power dissipation measured with the test board condition is listed as reference data.

Please refer to page 26〜27 for details.

OUT

）

BIAS

-0.3～+6.5

OUT

-0.3～V

-0.3～VIN+0.3 or +6.5

（*1）

1.65

+0.3 or +6.5

BIAS

-0.3～+6.5

LIM

Pd

-0.3～VIN+0.3 or +6.5

120

1000 (PCB mounted)

250

600 (PCB mounted)

-40～+85 ℃

-55～+125 ℃

+0.3, VIN+0.3 or +6.5 in the lowest.

(*4)

V

A

V

mW

4/30

■ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT

Bias Voltage V

Input Voltage V

Output Voltage V

(*3

Maximum Output Current

)

I

Load Regulation ΔV Dropout Voltage Vdif

Supply Current 1

(*6)

I

Supply Current 2 IIN I

Stand-by Current 1 I Stand-by Current 2 I

Bias Line Regulation

Input Line Regulation

Bias UVLO Voltage V

Bias UVLO Release Voltage

Input UVLO Voltage VIN_

Input UVLO Release Voltage

Output Voltage

Temperature Characteristics

Bias Ripple Rejection R

atio V

Input Ripple Rejection Ratio

Current Limit

Adjustable Current

Limit Accuracy

(*3)

I

(*8)

Short - Circuit Current I

Thermal Shutdown

Detect Temperature

Thermal Shutdown

Release Temperature

Thermal Shutdown

Hysteresis Width

CL Auto-Discharge Resistance

CE "H" Level Voltage V

CE "L" Level Voltage V

CE "H" Level Current I

CE "L" Level Current I

Soft-Start Time

Output Rise Time

(*7)

(Type A) tSS

(*7)

(Type B) tON

Inrush Current (Type A) I

NOTE: Unless otherwise stated, V

(*1)

V

= Effective output voltage

OUT(E)

(*2)

V

= Nominal output voltage

OUT(T)

(*3)

Mount conditions affect heat dissipation. Maximum output current is not guaranteed when TSD starts to operate earlier.

(*4)

Vdif＝{V

(*5)

Please refer to the table E-1 named DROPOUT VOLTAGE CHART

(*6)

Supply current 1 (I

(*7)

A time between the CE input goes over the CE H threshold and the output reaches VOUT(E)x0.9V.

(*8)

Design value

IN1－VOUT1

V

is an input voltage when V

IN1

V

is a voltage equal to 98% of the output voltage where V

OUT1

BIAS=VCE

}

) may be fluctuated because that some bias current flows into the output.

BIAS

2.5 - 6.0 V ①

BIAS

0.5 - 3.0 V ①

IN

V

＜1.2V -0.015 +0.015

(*1)

I

OUT(E)

OUTMAX

1mA≦I

OUT

(*4)

I

BIAS

V

BIAS_STB

V

IN_STB

ΔV

/

OUT

(ΔV

・

V

BIAS

OUT

ΔV

/

OUT

(ΔVIN・

V

）

OUT

BIAS_UVLOD

V

BIAS_UVLOR

UVLOD

VIN_

UVLOR

ΔV

/

OUT

・

V

(ΔTopr

OUT

BIAS_PSRR

V

IN_PSRR

V

LIM

I

- (-35) - (35) %

LIM_ADJ

V

SHORT

T

Junction Temperature - 150 - ℃ ①

TSD

T

Junction Temperature - 125 - ℃ ①

TSR

T

TSD-TTSR

R

VCE=VSS, V

DCHG

 0.65 - 6.00 V ④

CEH

 V

CEL

V

CEH

V

CEL

RUSH

=3.6V, VIN=V

OUT1

=100mA

OUT

V

＜1.2V, V

OUT（T)

V

≧1.2V, V

OUT（T)

OUT

=1A - E-1

OUT

=0A 76 100 143 μA ②

OUT

=0A

OUT

=6.0V, VIN=3.0V, VCE=VSS - 0.01 0.10 μA ②

BIAS

=6.0V, VIN=3.0V, VCE=VSS - 0.01 0.15 μA ②

BIAS

V

＜

1.2V, VCE=V

OUT(T)

）

V

≧

1.2V, VCE=V

OUT（T)

V

+0.1V≦VIN≦3.0V - 0.01 0.10 %/V ①

OUT（T)

V

2.5 - 6.0 V ①

V

0.5 - 3.0 V ①

I

=100mA

OUT

）

-40℃≦Topr≦85℃ V

BIAS=VCE

I

=100mA, f=1kHz, C

OUT

VIN=V

OUT(T)

I

=100mA, f=1kHz, CIN=OPEN

OUT

={V

OUT

OUT=VSS

Junction Temperature - 25 - ℃ ①

BIAS=VCE

=6.0V, VCE=V

BIAS

V

=0V→3.6V, tr=5μs

CE

V

=0V→3.6V, tr=5μs

CE

C

=2.2μF

L

C

=10μF

L

+0.3V, I

OUT(T)

appears at the output during decreasing input voltage gradually.

OUT(T)

V

≧1.2V -0.020

OUT(T)

=2.5V

BIAS=VCE

BIAS=VCE=VOUT(T)

+1.3V

1.0 - - A ①

≦1A - 37 68 mV ①

V

＜1.2V 0.1 - 8.7

OUT(T)

V

≧1.2V 3.9 - 14.2

OUT(T)

, 2.5V

≦V

≦

BIAS

≦V

BIAS

6.0V

≦

6.0V

- 0.01 0.10 %/V ①

- 1.28 V ①

SS

- 0.23 V ①

SS

BIAS

, V

OUT(T)

+1.3V

V

OUT(T)

(*2)

+0.020

(*5)

mV ①

- ±30 - ppm/℃ ①

=3.6VDC+0.2V

+0.3VDC+0.2V

OUT@IOUT

=1A}×0.95 1.0 1.3 - A ①

p-pAC

BIAS

p-pAC

=OPEN

- 60 - dB ③

- 75 - dB ③

- 90 - mA ①

OUT=VOUT(T)

130 190 255 Ω ①

- 0.41 V ④

SS

=6.0V 3.2 6.0 10.6 μA ④

-0.1 - 0.1 μA ④

SS

225 430 600

- - 110

- - 70

- - 85

- - 155

- - 215

Pin=VSS

LIM

OUT(T)

+0.3V at I

=1A is input to the VIN pin.

OUT

=1mA , C

OUT

V

OUT(T)

V

OUT(T)

V

OUT(T)

V

OUT(T)

BIAS=CIN

BIAS=VCE

≦1.2V ＞1.2V ≦1.2V ＞1.2V

=1.0μF, CL=2.2μF, I

=3.6 and VIN=V

XC6604

Series

Ta =2 5 ℃

V ①

μA ②

①

μs ⑤ μs ⑤

mA

⑤

5/30

XC6604 Series

■ELECTRICAL CHARACTERISTICS (Continued)

●Dropout Voltage Chart

E-1

NOMINAL

OUTPUT

VOLTAGE

V

OUT(T)

0.5 2.5 152 218 2.8 3.1 3.7 4.5

0.6 2.4 2.7 3.0 3.6 4.4

0.7 2.3

0.8 2.2 158 228 2.5 152 218 2.8 3.4 4.2

0.9 2.1 162 233 2.4 2.7 3.3

1.0 2.0 165 238 2.3

1.1 1.9 167 243 2.2 158 228 2.5 152 218 3.1 3.9

1.2 1.8 169 253 2.1 162 233 2.4 3.0 3.8

1.3 1.7 179 268 2.0 165 238 2.3

1.4 1.6 189 283 1.9 167 243 2.2 158 228 2.8 3.6

1.5 1.5 202 303 1.8 169 253 2.1 162 233 2.7 3.5

1.6 1.4 213 328 1.7 179 268 2.0 165 238 2.6

1.7 1.3 225 373 1.6 189 283 1.9 167 243 2.5 152 218 3.3

1.8 1.2 255 423 1.5 202 303 1.8 169 253 2.4 155 223 3.2 146 213

* Dropout voltage is defined as the V

V

BIAS

VGS

(V)

TYP. MAX.

155 223

=3.0V V

Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV)

V

(V)

2.6

GS

=3.3V V

BIAS

GS

TYP. MAX.

146 213

155 223

(=V

BIAS–VOUT(E)

6/30

DROPOUT VOLTAGE (mV)

=3.6V V

BIAS

V

GS

(V)

TYP. MAX.

2.9 3.5 4.3 146 213

2.6

155 223

V

(V)

3.2 4.0

2.9 3.7

=4.2V V

BIAS

GS

TYP. MAX.

140 208

146 213

) of the driver transistor.

BIAS

VGS

(V)

TYP. MAX.

137 206

4.1

140 208

3.4

=5.0V

■TEST CIRCUITS

CIRCUIT①

CIRCUIT②

CIRCUIT③

CIRCUIT④

XC6604

Series

7/30

XC6604 Series

■TEST CIRCUITS (Continued)

CIRCUIT⑤

8/30

XC6604 Series, Type A

XC6604 Series, Type B

XC6604

Series

■OPERATIONAL DESCRIPTION

The voltage divided by resistors R1 and R2 is compared with the internal reference voltage by the error amplifier. The V

by the subsequent output signal. The output voltage at the V

V

pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. Also, the V

BIAS

output current. V

pin is connected to a driver transistor and provides output current.

IN

In order to obtain high efficient output current through low on-resistance, please take enough V

pin is controlled and stabilized by a system of negative feedback. 

OUT

pin supplies some current as

BIAS

(=V

BIAS

– V

GS

) of the driver transistor.

OUT(E)

Figure1: XC6604 Series, Type A

The XC6604 series includes a combination of a fixed current limiter circuit and a foldback short-circuit protection. When the output current

reaches the current limit, the output voltage drops and this operation makes the output current foldback to be decreased.

The current limit can be set freely with connecting a resistor to the I

LIM

pin.

Please note about the foldback circuit characteristics below;

●Output voltage may not rise when the output voltage is lower than 0V at the IC operation start.

●Current over the foldback current limit will not flow at the IC operation start.

●Please use type A (with soft-start time) to prevent from inrush current, because the circuit may not response to a drastic current change such

as the inrush current.

When the I

pin is left open, driver transistor will be forced off.

LIM

Current Limit is calculated by the following formulas.

= V

I

LIM

/ ( R

+ R

OUT（T

= V

R

LIM1

）

OUT（T

LIM1

）

) × 79645.7 [A]

LIM2

/ ( 16.3 × 10-6 ) [Ω]

: Current Limit

I

LIM

: Nominal Output Voltage

V

OUT(T)

: Internal Current Limit Resistance

R

LIM1

: External Current Limit Resistance

R

LIM2

Figure 2: XC6604 Series, Range of adjustable current limit

OUTPUT VOLTAGE RANGE ADJUSTABLE CURRENT LIMIT

V

I

OUT(T)

LIM

0.5V～1.8V 0.5A～1.3A

XC6604 Series, R

LIM2

pin is then driven

OUT

Connecting

9/30

XC6604 Series

■OPERATIONAL DESCRIPTION (Continued)

<Soft-Start Function>

With the XC6604 (Type A), the inrush current (I As for the XC6604, the soft-start time in the type A is optimized internally. On the other hand, the type B of the XC6604 does not have the soft-start time function.

When the junction temperature of the built-in driver transistor reaches the temperature limit, the thermal shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown function is released and the IC’s operation is automatically restored because the junction temperature drops to the level of the thermal shutdown release temperature.

When the V

pin and VIN pin voltage drops, the output driver transistor is set to OFF by UVLO function to prevent false output caused by

BIAS

unstable operation of the internal circuitry. When the V released. The driver transistor is turned ON and start to operate voltage regulation.

The XC6604 internal circuitry can be shutdown via the signal to the CE pin. In shutdown mode with CE low level voltage, the V pulled down to the V

level via CL discharge resistance (R

SS

The CE pin has pull-down circuitry so that CE input current flows during IC operation. If the CE pin voltage is taken from V then logic is fixed and the IC will operate normally. However, supply current may increase as a result of through current in the IC's internal circuitry when medium voltage is input.

<C

High Speed Auto-Discharge>

L

XC6604 series can quickly discharge the electric charge at the output capacitor (C and the V the output capacitor (C auto-discharge resistance (R an output capacitor value (C formula. Please also note R

pin when a low signal to the CE pin which enables a whole IC circuit put into OFF state. When the IC is disabled, electric charge at

SS

) is quickly discharged so that it could avoids malfunction. Discharge time of the output capacitor (CL) is set by the C

L

) and the output capacitor (CL). By setting time constant of a CL auto-discharge resistance value (R

DCHG

) as τ(τ= CL x R

L

is depended on V

DCHG

V: Output voltage during discharge

: Initial Output voltage

V

OUT(E)

t: Discharge time

τ: C

L×RDCHG

With the XC6604 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation circuit is built-in.

The output capacitor (C

) should be connected as close to V

L

phase compensation are as the table below. For a stable power input, please connect a bias capacitor (C

) between the VIN pin and the VSS pin. In order to ensure the stable phase compensation while avoiding run-out of values, please use the

(C

IN

capacitor (C of C

BIAS

, CIN and CL) which does not depend on bias or temperature too much. The table below (Figure 3) shows recommended values

BIAS

, CIN and CL.

Figure 3: Recommended Values of C

OUTPUT VOLTAGE

RANGE

V

C

OUT(T)

, CIN and CL (MIN.)

BIAS

BIAS CAPACITOR INPUT CAPACITOR

BIAS

0.5V～1.8V 1.0μF 1.0μF 2.2μF

) from VIN to V

RUSH

pin voltage and the VIN pin voltage rises at release voltage, the UVLO function is

BIAS

DCHG

), the output voltage after discharge via the internal transistor is calculated by the following

DCHG

. When V

BIAS

OUT(E)

×

BIAS

V = V

for charging CL at start-up can be reduced and makes the VIN stable.

OUT

) placed in parallel to R1 and R2.

BIAS

) via the internal transistor located between the V

L

is larger, R

BIAS

-t/

τ

e

or ｔ=τln（V

pin and VSS pin to obtain stable phase compensation. Values required for the

OUT

) between the V

is smaller.

DCHG

/ V）

OUT(E)

pin and the VSS pin. Also, please connect an input capacitor

BIAS

OUTPUT

CAPACITOR

CIN CL

pin will be

OUT

pin or VSS pin

OUT

) and

DCHG

L

10/30

XC6604

Series

■NOTES ON USE

1. For temporary, transitional voltage drop or voltage rising phenomenon, the IC is liable to malfunction should the ratings be exceeded.

2. Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output current. Please keep

the resistance low for the V

3. Please wire the C

4. Capacitances of these capacitors (C

taken for capacitor selection to ensure stability of phase compensation from the point of ESR influence.

5. When it is used in a quite small input / output dropout voltage, output may go into unstable operation. Please test it thoroughly before using

it in production.

6. Torex places an importance on improving our products and their reliability.

We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems.

, CIN and CL as close to the IC as possible.

BIAS

, VIN and VSS wiring in particular.

BIAS

, C

BIAS

) are decreased by the influences of bias voltage and ambient temperature. Care shall be

IN, CL

11/30

XC6604 Series

■TYPICAL PERFORMANCE CHARACTERISTICS

* Unless otherwise stated, V

(1) Output Voltage vs. Output Current

XC6604x051MR-G

0.6

(V)

0.5

OUT

0.4

0.3

0.2

0.1

Output Voltage: V

0

0 0.5 1 1.5 2

Output Current: I

XC6604x121MR-G

1.4

1.2

(V)

OUT

1

0.8

0.6

0.4

0.2

Output Voltage: V

0

0 0.5 1 1.5 2

Output Current: I

XC6604x181MR-G

2

(V)

1.5

OUT

1

0.5

Output Voltage: V

0

00.511.52

Output Current: I

* Mount conditions affect heat dissipation. Thermal shutdown

may start to operate before reaching the current limit.

BIAS=VCE

=3.6V, VIN=V

RLIM2=0kΩ RLIM2=9.1kΩ RLIM2=22kΩ RLIM2=47kΩ

(A)

OUT

RLIM2=0kΩ RLIM2=22kΩ RLIM2=56kΩ RLIM2=120kΩ

(A)

OUT

RLIM2=0kΩ RLIM2=33kΩ RLIM2=82kΩ RLIM2=180kΩ

A)

OUT(

OUT(T)

+0.3V, I

OUT

=1mA , I

Pin= VSS, C

LIM

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604x051MR-G

0.1

(V)

0.08

OUT

0.06

0.04

0.02

Output Voltage: V

0

0 0.1 0.2 0.3 0.4 0.5

Output Current: I

XC6604x121MR-G

0.3

0.25

(V)

OUT

0.2

0.15

0.1

0.05

Output Voltage: V

0

0 0.1 0.2 0.3 0.4 0.5

Output Current: I

XC6604x181MR-G

0.5

(V)

0.4

OUT

0.3

0.2

0.1

Output Voltage: V

0

0 0.1 0.2 0.3 0.4 0.5

Output Current: I

* If start-up current is required over the current limit, IC operation will not start.

Please use the current within the range of use.

RLIM2=0kΩ RLIM2=9.1kΩ RLIM2=22kΩ RLIM2=47kΩ

(A)

OUT

RLIM2=0kΩ RLIM2=22kΩ RLIM2=56kΩ RLIM2=120kΩ

(A)

OUT

RLIM2=0kΩ RLIM2=33kΩ RLIM2=82kΩ RLIM2=180kΩ

A)

OUT(

12/30

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(2) Limit Current vs. Adjustable Resistance (3) Output Voltage vs. Bias Voltage

XC6604xxx1xR-G

1.4

1.2

（A)

1

LIM

0.8

0.6

0.4

Limit Current: I

0.2

0

0 50 100 150 200

Adjustable Resistance: R

BIAS=VCE

=3.6V, VIN=V

VOUT(T)=0 .5V

VOUT(T)=1 .2V

VOUT(T)=1 .8V

（kΩ）

LIM2

OUT(T)

+0.3V, I

OUT

=1mA, I

(V)

OUT

Output Voltage: V

(V)

OUT

Output Voltage: V

Pin= VSS, C

LIM

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604x051xR-G

0.6

(V)

0.5

OUT

0.4

0.3

IOUT=0mA IOUT=1mA IOUT=100mA

0.2

0.1

Output Voltage: V

0.0 0246

Bias Voltage: V

BIAS

(V)

XC6604x121xR-G

1.4

1.2

1.0

0.8

IOUT=0mA IOUT=1mA IOUT=100mA

0.6

0.4

0.2

0.0 0246

Bias Vo ltage: V

BIAS

(V)

XC6604x181xR-G

2.0

1.5

IOUT=0mA

1.0

IOUT=1mA IOUT=100mA

0.5

0.0 0246

Bias Vo ltage: V

BIAS

(V)

XC6604

Series

13/30

XC6604 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(4) Output Voltage vs. Input Voltage (5) Dropout Voltage vs. Output Current

XC6604x051xR-G

0.6

(V)

0.5

OUT

0.4

0.3

0.2

0.1

Output Voltage: V

0.0 0123

Input Voltage: V

XC6604x121xR-G

1.4

1.2

(V)

OUT

1.0

0.8

0.6

0.4

0.2

Output Voltage: V

0.0 0123

Input Voltage: V

XC6604x181xR-G

2.0

(V)

1.5

OUT

1.0

0.5

Output Voltage: V

0.0 0123

Input Voltage: V

BIAS=VCE

=3.6V, VIN=V

IOUT=0mA IOUT=1mA IOUT=100mA

(V)

IN

IOUT=0mA IOUT=1mA IOUT=100mA

(V)

IN

IOUT=0mA IOUT=1mA IOUT=100mA

(V)

IN

OUT(T)

+0.3V, I

OUT

=1mA, I

Pin=VSS, C

LIM

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604x121MR-G

250

VBIAS=3.0V

200

150

VBIAS=3.3V

VBIAS=3.6V VBIAS=4.2V

VBIAS=5.0V

100

50

Dro pout Voltage : Vdif(mV)

0

0 200 400 600 800 1000

Output Current: I

OUT

(mA)

XC6604xxx1MR-G

I

OUT

350

300

250

Ta=-40℃

Ta=25℃

Ta=85℃

200

150

100

50

Dro pout Voltage : Vdif(mV)

0

123456

(*1)

(V)

V

GS

(*1)

VGS is a Gate –Source voltage of the driver transistor that is defined as

- V

the value of V

BIAS

OUT(E)

.

A value of the dropout voltage is determined by the value of the V

=1A

.

GS

14/30

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(6) Supply Bias Current vs. Bias Voltage (7) Supply Input Current vs. Input Voltage

XC6604x051xR-G

160

(μA)

140

BIA S

120 100

80 60 40 20

Su pply Bias Current: I

0

0123456

Bias Voltage: V

XC6604x121xR-G

160

(μA)

140

BIAS

120 100

80 60 40 20

Supply Bias Current: I

0

0123456

Bias Voltage: V

XC6604x181xR-G

160

(μA)

140

BIAS

120 100

80 60 40 20

Su pply Bias Current: I

0

0123456

Bias Voltage: V

BIAS=VCE

=3.6V, VIN=V

CIN=C V

CE=VBIAS

Ta=-40℃ Ta=25℃ Ta=85℃

(V)

BIA S

CIN=C V

CE=VBIAS, IOUT

Ta=-40℃ Ta=25℃ Ta=85℃

(V)

BIA S

CIN=C

V

CE=VBIAS

(V)

BIA S

OUT(T)

BIAS=CL

, I

BIAS=CL

, I

Ta=-40℃ Ta=25℃ Ta=85℃

+0.3V, I

=OPEN

=0mA

OUT

=OPEN

=0mA

=OPEN

=0mA,

OUT

=1mA, I

(μA)

IN

Su pply Input Curr e n t: I

(μA)

IN

Su pply Input Curr en t: I

(μA)

IN

Su pply Input Curr e n t: I

Pin=VSS, C

LIM

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604x051xR-G

CIN=C

20

Ta=-40℃

15

Ta=25℃ Ta=85℃

10

5

0

0 0.5 1 1.5 2 2 .5 3

Input Voltage: V

(V)

IN

XC6604x121xR-G

CIN=C

20

Ta=-40℃

15

Ta=25℃ Ta=85℃

10

5

0

0 0.5 1 1.5 2 2 .5 3

Input Voltage: V

(V)

IN

XC6604x181xR-G

CIN=C

20

15

10

5

Ta=-40℃ Ta=25℃ Ta=85℃

0

0 0.5 1 1.5 2 2 .5 3

Input Voltage: V

(V)

IN

BIAS=CL

=OPE N

I

OUT

=OPE N

I

OUT

=OPE N

I

OUT

XC6604

Series

=0mA

15/30

XC6604 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(8) Output Voltage vs. Ambient Temperature (9) Supply Bias Current vs. Ambient Temperature

XC6604x051ｘR-G

0.52

(V)

0.51

OUT

0.5

0.49

Output Voltage: V

0.48

-50 0 50 100 Ambient Temperature: Ta(℃)

XC6604x121ｘR-G

1.22

(V)

1.21

OUT

1.2

1.19

Output Voltage: V

1.18

-50 0 50 100 Ambient Temperature: Ta(℃)

XC6604x181ｘR-G

1.82

(V)

1.81

OUT

1.8

1.79

Output Voltage: V

1.78

-50 0 50 100 Ambient Temperature: Ta(℃)

BIAS=VCE

=3.6V, VIN=V

IOUT=1mA

IOUT=100mA

IOUT=1mA

IOUT=100mA

IOUT=1mA

IOUT=100mA

OUT(T)

+0.3V, I

OUT

=1mA, I

(μA)

BIAs

Su pply Bias Cu rre n t: I

(μA)

BIAs

Supply Bias Current: I

(μA)

BIAs

Supply Bias Current: I

Pin=VSS, C

LIM

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604x051ｘR-G

CIN=C

BIAS=CL

160

140

120

100

80

60

40

-50 0 50 100 Ambient Temperature: Ta(℃)

XC6604x121ｘR-G

CIN=C

BIAS=CL

160

140

120

100

80

60

40

-50 0 50 100 Ambient Temperature: Ta(℃)

XC6604x181ｘR-G

CIN=C

BIAS

160

140

120

100

80

60

40

-50 0 50 100 Ambient Temperature: Ta(℃)

=OPE N

I

=0mA

OUT

=OPE N

I

=0mA

OUT

= CL=OPE N

I

=0mA

OUT

16/30

A

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(10) Supply Input Current vs. Ambient Temperature

XC6604x051ｘR-G

3

(μA)

IN

2

1

Supply Input Current: I

0

-50 0 50 100 Ambient Temperature: Ta(℃)

XC6604x121ｘR-G

12

(μA)

10

IN

8

6

4

2

Supply Input Current: I

0

-50 0 50 100 Ambient Temperature: Ta(℃)

XC6604x181ｘR-G

16

(μA)

14

IN

12

10

8

6

Supply Input Current: I

4

-50 0 50 100 Ambient Temperature: Ta(℃)

BIAS=VCE

=3.6V, VIN=V

CIN=C

OUT(T)

BIAS=CL

+0.3V, I

=OPEN

I

=0m

OUT

=OPEN

I

=0m

OUT

=OPEN

I

=0m

OUT

=1mA, I

Pin=VSS, C

LIM

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604

Series

17/30

XC6604 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(11) Bias Transient Response (12) Input Transient Response

0.58

XC6604x051xR-G

V

BIAS

(V)

0.56

OUT

0.54

0.52

0.5

Output Voltage: V

0.48

Time (200μs/ div)

XC6604x121xR-G

V

BIAS

1.28

(V)

1.26

OUT

1.24

1.22

1.2

Output Voltage: V

1.18

Time (200μs/ div)

XC6604x181xR-G

V

=3.6V→4.6V(tr=tf=5μs) I

BIAS

1.88

(V)

1.86

OUT

1.84

1.82

1.8

Output Voltage: V

1.78

Time (200μs/div)

=3.6V, VIN=V

BIAS=VCE

=3.0V→4.0V(tr=tf=5μs), I

Bias Voltage

Output Voltage

=3.0V→4. 0V(tr=tf=5μs) I

Bias Voltage

Output Voltage

C

Bias Voltage

Output Voltage

C

OUT

BIAS

OUT

OUT(T)

=OPEN

BIAS

=100mA

OUT

=OPEN

BIAS

=100mA

=OPEN

=100mA

+0.3V, I

5

4

3

2

1

0

5

4

3

2

1

0

5

4

3

2

1

0

OUT

=1mA, I

Pin=VSS, C

LIM

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604x051xR-G

CIN=OPE N

=100mA

OUT

3

0.58

V

=0.8V→1.8V(tr=tf=5μs), I

IN

Input Voltage

(V)

BIAS

OUT

0.56

0.54

0.52

2

1

0

Output Voltage

Bias Voltage: V

0.5

Output Voltage: V

0.48

-1

-2

Time (200μs/ div)

XC6604x121xR-G

CIN=OPEN

=100mA

OUT

3.5

1.28

V

=1.5V→2. 5V(tr=tf=5μs), I

IN

Input Voltage

(V)

BIA S

OUT

1.26

1.24

1.22

Bias Voltage: V

1.2

Output Voltage: V

Output Voltage

1.18

2.5

1.5

0.5

-0.5

-1.5

Time (200μs/div)

XC6604x181xR-G

V

=2.1V→3.1V(tr=tf=5μs), I

IN

1.88

(V)

BIAS

OUT

1.86

Input Voltage

1.84

1.82

CIN=OPE N

=100mA

OUT

4

3

2

1

Output Voltage

Bias Voltage: V

1.8

Output Voltage: V

1.78

0

-1

Time (200μs/div)

(V)

IN

Input Voltage: V

(V)

IN

Input Voltage: V

(V)

IN

Input Voltage: V

18/30

)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(13) Load Transient Response

XC6604x051xR-G

0.66

(V)

0.62

OUT

0.58

0.54

0.5

Output Voltage: V

0.46

Time (200μs/div)

XC6604x121xR-G

1.36

(V)

1.32

OUT

1.28

1.24

1.2

Output Voltage: V

1.16

Time (200μs/div)

XC6604x181xR-G

1.96

(V)

1.92

OUT

1.88

1.84

Output Voltage: V

1.8

1.76

Time (200μs/div)

=3.6V, VIN=V

BIAS=VCE

I

=1mA⇔100mA(tr=tf=5μs

OUT

Output Current

Output Voltage

I

=1mA⇔100mA(tr=tf=5μs

OUT

Output Current

Output Voltage

I

=1mA⇔100mA(tr=tf=5μs

OUT

Output Current

Output Voltage

OUT(T)

0.2

0.1

0

-0.1

-0.2

-0.3

0.2

0.1

0

-0.1

-0.2

-0.3

0.2

0.1

0

-0.1

-0.2

-0.3

+0.3V, I

(A)

OUT

Outpur Current: I

(A)

OUT

Outpur Current: I

(A)

OUT

Outpur Current: I

OUT

=1mA, I

Pin=VSS, C

LIM

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604

Series

19/30

)

A

)

A

)

XC6604 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(14) CE Input Response

XC6604A051xR-G

4

(V)

2

CE

0

-2

-4

CE Input Voltage: V

-6

Time (200μs/div)

XC6604A121xR-G

4

(V)

2

CE

0

-2

-4

CE Input Voltage: V

-6

Time (200μs/div)

XC6604A181xR-G

4

(V)

2

CE

0

-2

-4

CE Input Voltage: V

-6

Time (200μs/div)

CE Input Voltage

=3.6V, VIN=V

BIAS=VCE

Input Current

VCE=0V→3.6V(tr=5μs

Input Current

VCE=0V→3.6V(tr=5μs

Input Current

OUT(T)

VCE=0V→3.6V(tr=5μs

I

=100mA

OUT

200

150

100

50

0

-50

I

=100mA

OUT

200

150

100

50

0

-50

I

=100mA

OUT

200

150

100

50

0

-50

+0.3V, I

(mA)

IN

Input Current: I

(mA)

IN

Input Current: I

(mA)

IN

Input Current: I

OUT

=1mA, I

Pin= VSS, C

LIM

4

(V)

2

CE

0

-2

-4

CE Input Voltage: V

-6

4

(V)

2

CE

0

-2

-4

CE Input Voltage: V

-6

4

(V)

2

CE

0

-2

-4

CE Input Voltage: V

-6

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604A051xR-G

CE Input Voltage

Rush Current

Input Current

Time (50μs/div)

XC6604A121xR-G

CE Input Voltage

Rush Current

Input Current

Time (50μs/div)

XC6604A181xR-G

CE Input Voltage

Rush Current

Input Current

Time (50μs/div)

VCE=0V→3.6V(tr=5μs

I

=100m

OUT

200

150

100

50

0

-50

VCE=0V→3.6V(tr=5μs

I

=100mA

OUT

200

150

100

50

0

-50

VCE=0V→3.6V(tr=5μs

I

=100m

OUT

200

150

100

50

0

-50

(mA)

IN

Input Current: I

(mA)

IN

Input Current: I

(mA)

IN

Input Current: I

20/30

F

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(14) CE Input Response (Continued)

XC6604A051xR-G

4

(V)

2

CE

CE In put Voltage

0

-2

-4

CE In put Voltage : V

-6

Time (200μs/div)

XC6604A121xR-G

4

(V)

2

CE

0

VCE=0V→3.6V(tr=5μs), I

CE Input Voltage

-2

-4

CE In put Voltage : V

-6

Time (200μs/div)

XC6604A181xR-G

4

VCE=0V→3.6V(tr=5μs), I

(V)

2

CE

CE Input Voltage

0

-2

-4

CE Input Voltage: V

-6

Time (200μs/div)

=3.6V, VIN=V

BIAS=VCE

VCE=0V→3.6V(tr=5μs), I

Input Current

OUT

CL=10μ

=100mA

OUT

CL=10μ

=100mA

OUT

OUT(T)

CL=10μ

=100mA

400

300

200

100

0

-100

400

300

200

100

0

-100

400

300

200

100

0

-100

+0.3V, I

(mA)

IN

Input Current: I

(mA)

IN

Input Current: I

(mA)

IN

Input Current: I

OUT

=1mA, I

Pin=VSS, C

LIM

4

(V)

2

CE

0

-2

-4

CE In put Voltage : V

-6

4

(V)

2

CE

0

-2

-4

CE In put Voltage : V

-6

4

(V)

2

CE

0

-2

-4

CE Input Voltage: V

-6

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604A051xR-G

VCE=0V→3.6V(tr=5μs), I

CE Input Voltage

Rush Current

Input Current

Time (50μs/div)

XC6604A121xR-G

VCE=0V→3.6V(tr=5μs), I

CE Input Voltage

Rush Current

Input Current

Time (50μs/div)

XC6604A181xR-G

VCE=0V→3.6V(tr=5μs), I

CE In put Voltage

Rush Current

Input Current

Time (5 0 μs/div)

OUT

CL=10μ

=100mA

OUT

CL=10μ

=100mA

OUT

CL=10μ

=100mA

400

300

200

100

0

-100

400

300

200

100

0

-100

400

300

200

100

0

-100

XC6604

Series

(mA)

IN

Input Current: I

(mA)

IN

Input Current: I

(mA)

IN

Input Current: I

21/30

)

A

)

XC6604 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(15) CE Rising Response Time

XC6604A051xR-G

4

(V)

2

CE

0

-2

-4

CE Input Voltage: V

-6

Time (200μs/div)

XC6604A121xR-G

4

(V)

2

CE

CE Input Voltage

0

-2

-4

CE Input Voltage: V

-6

Time (200μs/div)

XC6604A181xR-G

4

(V)

2

CE

0

-2

-4

CE Input Voltage: V

-6

Time (200μs/div)

=3.6V, VIN=V

BIAS=VCE

VCE=0V→3.6V(tr=5μs

CE Input Voltage

Output Voltage

VCE=0V→3.6V(tr=5μs

Output Voltage

VCE=0V→3.6V(tr=5μs

CE Input Voltage

Output Voltage

I

OUT

I

OUT

I

=100m

=100mA

2

1.5

1

0.5

0

-0.5

=100mA

OUT

OUT(T)

1.6

1.2

0.8

0.4

0

-0.4

4

3

2

1

0

-1

+0.3V, I

(V)

OUT

Output Voltage: V

(V)

OUT

Output Voltage: V

(V)

OUT

Output Voltage: V

OUT

=1mA, I

Pin=VSS, C

LIM

4

(V)

2

CE

0

-2

-4

CE Input Voltage: V

-6

4

(V)

2

CE

0

-2

-4

CE Input Voltage: V

-6

4

(V)

2

CE

0

-2

-4

CE In put Voltage: V

-6

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604B051xR-G

VCE=0V→3.6V(tr=5μs

CE Input Voltage

Output Voltage

Time (40μs/div)

XC6604B121xR-G

VCE=0V→3.6V(tr=5μs

CE Input Voltage

Output Voltage

Time (40μs/div)

XC6604B181xR-G

CE Input Voltage

Output Voltage

Time (4 0 μs/div)

I

=100mA

OUT

1.6

1.2

0.8

0.4

0

-0.4

I

=100mA

OUT

2

1.5

1

0.5

0

-0.5

VCE=0V→3.6V(tr=5μs

I

=100mA

OUT

4

3

2

1

0

-1

(V)

OUT

Output Voltage: V

(V)

OUT

Output Voltage: V

(V)

OUT

Output Voltage: V

22/30

A

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(16) Rising Response Time

BIAS=VCE

=3.6V, VIN=V

OUT(T)

+0.3V, I

OUT

=1mA , I

Pin=VSS, C

LIM

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604

Series

1

XC6604A051xR-G

V

=0V→0.8V(tr=5μs), I

IN

CIN=OPEN

=100mA

OUT

1.6

0.5

(V)

IN

0

-0.5

Input Voltage: V

-1

-1.5

Time (200μs/div)

Input Voltage

Output Voltage

1.2

0.8

0.4

0

-0.4

(V)

OUT

Output Voltage: V

XC6604A121xR-G

V

=0V→1.5V(tr=5μ), I

IN

2

1

(V)

IN

0

Input Voltage

CIN=OPEN

=100m

OUT

2

1.5

1

(V)

OUT

CIN=OPEN

=100m

OUT

0.5

0

-0.5

4

3

2

1

0

-1

Output Voltage: V

(V)

OUT

Output Voltage: V

-1

Input Voltage: V

-2

Output Voltage

-3

3

2

(V)

IN

1

0

Input Voltage: V

-1

-2

Time (200μs/div)

XC6604A181xR-G

V

=0V→2.1V(tr=5μs), I

IN

Input Voltage

Output Voltage

Time (200μs/div)

23/30

A

XC6604 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

* Unless otherwise stated, V

(17) Bias Voltage Ripple Rejection Rate (18) Input Voltage Ripple Rejection Rate

XC6604x051xR-G

100

90 80 70

(dB)

60 50 40

BIAS _PSRR

V

30 20 10

0

0.01 0.1 1 10 100 1000 10000

Frequency (kHz)

XC6604x121xR-G

100

90 80 70

(dB)

60 50 40

BIAS_ PSRR

V

30 20 10

0

0.01 0.1 1 10 100 1000 10000

Frequency (kHz)

XC6604x181xR-G

100

90 80 70

(dB)

60 50 40

BIAS_ PSRR

V

30 20 10

0

0.01 0.1 1 10 100 1000 10000

Frequency (kHz)

BIAS=VCE

V

=3.6V, VIN=V

=3.6VDC+0.2Vp-p

BIAS

=3.6VDC+0.2Vp-pAC, I

BIAS

=3.6VDC+0.2Vp-pAC, I

BIAS

OUT(T)

C

AC, IOUT

C

BIAS

OUT

BIAS

OUT

=OPEN

=100m

=OPEN

=100m

=OPEN

=100m

+0.3V, I

OUT

=1mA , I

(dB)

IN _PSRR

V

(dB)

IN _PSRR

V

(dB)

IN _PSRR

V

Pin=VSS, C

LIM

=1.0μF, CL=2.2μF, Ta = 25 ℃

BIAS=CIN

XC6604x051xR-G

V

=0.8VDC+0.2Vp-pAC, I

IN

100

90 80 70 60 50 40 30 20 10

0

0.01 0.1 1 10 100 1000 10000 Frequency (kHz)

XC6604x121xR-G

=1.5VDC+0.2Vp-pAC, I

V

IN

100

90 80 70 60 50 40 30 20 10

0

0.01 0.1 1 10 100 1000 10000

Frequency (kHz)

XC6604x181xR-G

=2.1VDC+0.2Vp-pAC, I

V

IN

100

90 80 70 60 50 40 30 20 10

0

0.01 0.1 1 10 100 1000 10000

Frequency (kHz)

CIN=OPEN

=100mA

OUT

CIN=OPEN

=100mA

OUT

CIN=OPEN

=100mA

OUT

24/30

■PACKAGING INFORMATION

2.0±0.05

0.6MAX

0.25±0.05

1.0±0.1

0.70±0.05

●USP-6C Reference Pattern Layout (unit: mm) ●USP-6C Reference Metal Mask Design (unit: mm)

SOT-26W

(unit : mm)

+0.1

0.4

-0.05

6

1

(0.95)

2.9±0.2

5

2

1.9±0.2

4

0～0.1

3

+0.1

0.15

-0.05

XC6604

Series

25/30

XC6604 Series

■PACKAGING INFORMATION (Continued)

● USP-6C Power Dissipation

Power dissipation data for the USP-6C is shown in this page.

The value of power dissipation varies with the mount board conditions.

Please use this data as one of reference data taken in the described condition.

1. Measurement Condition (Reference data)

Condition: Mount on a board

Ambient: Natural convection

Soldering: Lead (Pb) free

Board: Dimensions 40 x 40 mm (1600 mm

Copper (Cu) traces occupy 50% of the board area

Material: Glass Epoxy (FR-4)

Thickness: 1.6 mm

Through-hole: 4 x 0.8 Diameter

2. Power Dissipation vs. Ambient temperature

Board Mount (Tj max = 125℃)

In top and back faces

Package heat-sink is tied to the copper traces

Ambient Temperature （℃） Power Dissipation Pd （mW） Thermal Resistance (℃/W)

2

in one side)

Evaluation Board (Unit: mm)

Power Dissipation: Pd (mW)

26/30

25 1000

85 400

Pd-Ta特性

グラフ

Pd vs. Ta

1200 1000

800 600 400 200

許容損失Pd（mW）

0

25 45 65 85 105 125

Ambient Temperature: Ta (℃)

周辺温度

Ta（℃）

100.00

p

(

)

XC6604

Series

■PACKAGING INFORMATION (Continued)

● SOT-26W Power Dissipation

Power dissipation data for the SOT-26W is shown in this page.

The value of power dissipation varies with the mount board conditions.

Please use this data as one of reference data taken in the described condition.

1. Measurement Condition (Reference data)

Condition: Mount on a board

Ambient: Natural convection

Soldering: Lead (Pb) free

Board: Dimensions 40 x 40 mm (1600 mm

Copper (Cu) traces occupy 50% of the board area

Material: Glass Epoxy (FR-4)

Thickness: 1.6 mm

Through-hole: 4 x 0.8 Diameter

2. Power Dissipation vs. Ambient temperature

Board Mount (Tj max = 125℃)

Ambient Temperature （℃） Power Dissipation Pd （mW） Thermal Resistance (℃/W)

In top and back faces

Package heat-sink is tied to the copper traces

(Board of SOT-26 is used.)

2

in one side)

評価基板レイアウト（単位：mm）

Evaluation Board (Unit: mm)

25 600

85 240

Pd-Ta特性グラフ

Pd vs. Ta

700

mW

600

166.67

500 400

ation: Pd

300 200 100

許容損失Pd（mW）

Power Dissi

0

25 45 65 85 105 125

Ambient Temperature: Ta (℃)

周辺温度Ta（℃）

27/30

XC6604 Series

■MARKING RULE

① represents product series

MARK PRODUCT SERIES

T XC6604A*****-G

U XC6604B*****-G

② represents output voltage

MARK OUTPUT VOLTAGE (V) MARK OUTPUT VOLTAGE (V)

A 0.5 K 1.2 B 0.6 L 1.3 C 0.7 M 1.4 D 0.8 N 1.5 E 0.9 P 1.6

F 1.0 R 1.7

H 1.1 S 1.8

③④ represents production lot number 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, B1 to ZZ in order. (G, I, J, O, Q, W excluded) *No character inversion used.

SOT-26W

64

5

① ② ③ ④

123

28/30

r

■MARKING RULE (Continued)

① represents product series

MARK PRODUCT SERIES

U XC6604******-G

② represents regulator type

MARK PRODUCT SERIES

A XC6604A*****-G

B XC6604B*****-G

③ represents output voltage

MARK OUTPUT VOLTAGE (V) MARK OUTPUT VOLTAGE (V)

A 0.5 K 1.2 B 0.6 L 1.3 C 0.7 M 1.4 D 0.8 N 1.5 E 0.9 P 1.6

F 1.0 R 1.7

H 1.1 S 1.8

④⑤ represents production lot numbe 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, B1 to ZZ in order. (G, I, J, O, Q, W excluded) *No character inversion used.

XC6604

Series

USP-6C

1

④ ⑤

2

3

6

② ③①

5

4

29/30

XC6604 Series

1. The products and product specifications contained herein are subject to change without

notice to improve performance characteristics. Consult us, or our representatives

before use, to confirm that the information in this datasheet is up to date.

2. We assume no responsibility for any infringement of patents, patent rights, or other

rights arising from the use of any information and circuitry in this datasheet.

3. Please ensure suitable shipping controls (including fail-safe designs and aging

protection) are in force for equipment employing products listed in this datasheet.

4. The products in this datasheet are not developed, designed, or approved for use with

such equipment whose failure of malfunction can be reasonably expected to directly

endanger the life of, or cause significant injury to, the user.

(e.g. Atomic energy; aerospace; transport; combustion and associated safety

equipment thereof.)

5. Please use the products listed in this datasheet within the specified ranges.

Should you wish to use the products under conditions exceeding the specifications,

please consult us or our representatives.

6. We assume no responsibility for damage or loss due to abnormal use.

prior permission of TOREX SEMICONDUCTOR LTD.

30/30