Datasheet XC2407A816UR-G Datasheet (TOREX)

Page 1
XC2407A816UR-G
ETR2705-002a
1.6GHz ON/OFF Function LNA
GENERAL DESCRIPTION
The XC2407A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power
consumption using CMOS process, The XC2407 is designed for GPS band frequency (1.6GHz).
The IC's internal circuit can be placed in stand-by mode via the CE function, In the stand-by mode, consumption current is
greatly reduced and there is no need to add external ON/OFF control function like LDO.
External R
are 3.45V, 3.00V, 2.85V and 1.80V.
.
APPLICATIONS
GPS band RF signal amplified
TYPICAL APPLICATION CIRCUIT
can adjust power supply to any voltage of 1.71V~3.63V as self bias function. Standard power supply voltages
BIAS
FEATURES
Noise Figure : NF=0.96dB (TYP.) (@1.575GHz) Low Power Consumption High Gain : S21=15dB (TYP.) (@1.575GHz) CE Function : CE “H” 1.1V~V CE ”L” 0V~0.4V Operation Voltage Range Output : CMOS Output 50 Driver Built-in Operating Temperature Range Package : USP-8A01 Environmentally Friendly
:
7.02mW (TYP.) (VDD=1.80V, R
(1.71V≦VDD≦3.15V)
DD
: 1.71V~3.63V
:- 40℃~+ 85℃
: EU RoHS Compliant, Pb Free
TYPICAL PERFORMANCE CHARACTERISTICS
BIAS
=430)
VDD [V] (TYP.) R
3.45 620
3.00 470
2.85 430
1.80 150
* R
BIAS
TOP VIEW
BIAS
[]
Power Gain / Noise Figure vs. Frequency
XC2407A816
16
15
14
13
12
11
Powe r Gain : S21 (dB)
10
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2
VDD=VCE=2.85V, Ta=25℃
Frequency : f (GHz)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Noise Figure : NF (dB)
1/18
Page 2
XC2407A816UR-G
BLOCK DIAGRAM
* Diodes inside the circuit are an ESD protection diode.
PRODUCT CLASSIFICATION
Ordering Information
PRODUCT NAME PACKAGE ORDER UNIT
XC2407A816UR-G
(*1)
The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
(*1)
USP-8A01 3,000 / Reel
2/18
Page 3
PIN CONFIGURATION
XC2407A816UR-G

BOTTOM VIEW
PIN ASSIGNMENT
PIN NUMBER PIN NAME FUNCTION
1 RF_IN RF Signal Input
2 V
3 V
Ground
SS1
Ground
SS2
4 CE ON/OFF Control Pin
5 RF_OUT RF Signal Output
6 VDD Power Supply
7 R
8 R
R
BIAS1
R
BIAS2
Connect Pin
BIAS
Connect Pin
BIAS
FUNCTION CHART
PIN NAME SIGNAL STATUS
CE High Active
CE
CE Low Stand-by
CE OPEN Undefined State
USP-8A01
3/18
Page 4
XC2407A816UR-G
ABSOLUTE MAXIMUM RATINGS
PAR AMETER SYMBOL RATINGS UNITS
Power Supply Voltage VDD
CE Input Voltage VCE
Current Circuit IDD 42 mA
R
Input Voltage R
BIAS1
R
Input Voltage R
BIAS2
BIAS1
BIAS2
RF Input Power PIN 10 dBm
RF_IN Input Voltege V
RF_OUT Input Voltege V
RF_IN
RF_OUT
Power Dissipation Pd 120 mW
Operating Ambient Temperature Topr
Storage Temperature Tstg
* All voltages are described based on the V
V
pin and V
SS1
(*1)
The maximum value should be either VDD+0.3V or +4.00V in the lowest.
(*2)
The maximum value should be either R
(*3)
The maximum value should be either R
pin should be connected each other outside.
SS2
SS1
BIAS2
BIAS2
and V
pin.
SS2
+0.3V or +1.60V in the lowest. or +1.60V in the lowest.
-0.3〜V
-0.3〜V
-0.3〜R
-0.34.0
+0.3 or 4.0
DD
+0.3 or 4.0
DD
(*1)
(*1)
-0.3+1.6
0R
+0.3 or +1.6
BIAS2
BIAS2
or +1.6
(*3)
(*2)
-40+85
-55+125
Ta =2 5
V V
V V
V V
4/18
Page 5
XC2407A816UR-G
ELECTRICAL CHARACTERISTICS
●DC Characteristics Ta= 25 ℃
PAR AMETER SYMBOL CONDITIONS
R
BIAS
R
Power Supply Voltage
Current Circuit
Stand-by Current
VDD
I
DD
I
STBY
BIAS
R
BIAS
R
BIAS
1.71V≦V
V
1.71V≦V
CE=VDD
V
=620
=470
=430
=150
3.63V
DD
3.63V
DD
=0V
CE
(*2)
3.278 3.450 3.630 V
(*2)
2.850 3.000 3.150 V
(*2)
2.708 2.850 2.992 V
(*2)
1.710 1.800 1.890 V
(*1)
(*1)
MIN. TYP. MAX.
- 3.9 7.5 mA
- - 0.1 μA
1.71V≦VDD≦3.15V 1.1 - V
CE "H" Level Voltage
CE "L" Level Voltage
(*1)
For the relation of VDD and R
(*2)
R
BIAS
V
CEH
3.15V<V
- 0 - 0.4 V
V
CEL
, Please refer to the “Power Supply Voltage vs. R
BIAS
3.63V 1.3 - V
DD
Table” below.
BIAS
●AC Characteristics VDD=VCE=2.85V, R
PARAMETER SYMBOL CONDITIONS
MIN. TYP. MAX.
Power Gain S21 f=1.575GHz 13.5 15.0 - dB
Input Return Loss S11 f=1.575GHz - 9.5 -
Output Return Loss S22 f=1.575GHz - 9.5 -
Isolation
Noise Figure
(*1)
Input Power IP3
Input Power IP2
Input Power @ 1dB
Gain Conpression
(*1)
NF is the value excluding the substrate loss.
Power Supply Voltage vs. R
VDD [V] R
3.2783.630
2.8503.150
2.7082.992
1.7101.890
S12 f=1.575GHz - -20 -
NF f=1.575GHz - 0.96 - dB
f=1.575GHz, 1.576GHz - -5.1 - dBm
I
IP3
f=0.8GHz, 2.375GHz - 10.3 - dBm
I
IP
P1dB f=1.575GHz - -19 - dBm
BIAS
[]
BIAS
620
470
430
150
UNITS CIRCUIT
V
DD
V
DD
=430, Ta=25
BIAS
UNITS CIRCUIT
dB
dB
dB
5/18
Page 6
XC2407A816UR-G
NOTE ON USE
1.
For temporary, transitional voltage drop or voltage rising phenomenon, the IC is liable to malfunction should the ratings be exceeded.
2. Please eliminate static electricity from the operational table, people, and soldering iron.
3. Please use noiseless power supply for stable operation.
4. Please connect C
5. V
6. Please ensure to use an external component which does not depend on bias or temperature too much.
7. Torex places an importance on improving our products and their reliability.
pin and V
SS1
We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems.
to R
BIAS
pin should be connected each other outside.
SS2
pin as close as possible.
BIAS2
6/18
Page 7
TEST CIRCUITS
Circuit (DC Characteristics: Power Supply Pin Voltage, Circuit Current, Stand-by Current)
XC2407A816UR-G
R
BIAS2
P
IN
RF_IN
V
SS1
V
SS2
R
BIAS1
V
DD
RF_OUT
CE
V
CE
* PIN / P
is 50Ω
OUT
R
BIAS
C
BIAS
A
P
OUT
V
V
DD
Circuit (Power Gain, Input Return Loss, Output Return Loss, Isolation, Input Power @ 1dB Gain Compression)
Circuit (Noise Figure)
(*1)
Refer to the circuit for the block detail.
(*1)
Refer to the circuit for the block detail.
7/18
Page 8
XC2407A816UR-G
TEST CIRCUITS (Continued)
Circuit (Input Power IP3, Input Power IP2)
Circuit (XC2407 series, the circuit of the block)
(*1)
Refer to the circuit for the block detail.
V
(V) (TYP.) R
DD
BIAS
()
3.45 620
3.00 470
2.85 430
1.80 150
* R
should be used in ±1% tolerance and ±200ppm/ temperature stability.
BIAS
8/18
Page 9
TEST CIRCUITS (Continued)
Evaluation Board
18mm
V
DD
20mm
R
BIAS
C2
L3
P
OUT
P
C1
L1
IN
L2
XC2407A816UR-G
V
SS
V
CE
PCB (FR-4) MICROSTRIPLINE WIDTH=0.6mm t=0.18mm PCB size=18mm × 20mm
* Please use an external component which does not depend on bias or temperature too much.
External Components
SYMBOL SPEC COMMENT
C1 10nF -
C2 100pF -
L1 18nH
MURATA
(LQW15A18NG00D)
2 11nH
L3 8.7nH
R
-
BIAS
MURATA
(LQW15A11NG00D)
MURATA
(LQW15A8N7G00D)
Less than ±1% tolerance,
Less than ±200ppm/ temperature stability
9/18
Page 10
XC2407A816UR-G
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Current Circuits vs. Supply Voltage
(1) 回路電流 - 電源端子電圧特性例
5
(mA)
4.5
DD
4
3.5
XC2407A816
VDD=VCE, Ta=25℃
3
Current Circuits : I
2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : V
(V)
DD
(3) CE"L"ベル電圧 - 電源端子電圧特性例
(3) CE “L” Level Voltage vs. Power Supply Voltage
(V)
CEL
CE "L" Level Voltage : V
1.1 1
0.9
0.8
0.7
0.6
0.5
0.4
XC2407A816
Ta=25℃
2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : V
(V)
DD
(5) 入力側リタンロス - 電源端子電圧特性例 (6) 出力側リタ- 電源端子電圧特性例
(5) Input Return Loss vs. Power Supply Voltage
Input Return Loss : S11 (dB)
-9.2
-9.4
-9.6
-9.8
-10
-10.2
-10.4
XC2407A816
VDD=V
Ta=25℃, f=1.575GHz
CE、
2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : V
(V)
DD
(2) CE “H” Level Voltage vs. Supply Voltage
(2) CE"H"レベル電- 電源端子電圧特性例
XC2407A816
1.1
(V)
1
CEH
0.9
0.8
0.7
0.6
0.5
0.4
2.6 2.7 2.8 2.9 3 3.1
CE "H" Level Voltage : V
Power Supply Voltage : V
(4) 挿入電力利得 - 電源端子電圧特性例
(4) Power Gain vs. Power Supply Voltage
XC2407A816
VDD=V
15.4
CE、
15.35
15.3
15.25
15.2
15.15
Power Gain : S21 (dB)
15.1
2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : V
(6) Output Return Loss vs. Supply Voltage
XC2407A816
VDD=V
-8.5
-9
-9.5
-10
-10.5
-11
Output Return Loss : S22 (dB)
2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : V
CE、
Ta=25℃
(V)
DD
Ta=25℃, f=1.575GHz
(V)
DD
Ta=25℃, f=1.575GHz
(V)
DD
10/18
Page 11
f
XC2407A816UR-G
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(7) Isolation vs. Power Supply Voltage
(7) アイソレーション - 電源端子電圧特性例 (8) 雑音指数 - 電源端子電圧特性例
-21.8
-21.9
-22
XC2407A816
VDD=V
Ta=25℃, f=1.575GHz
CE、
(9) Input Power IP3 vs. Power Supply Voltage
-22.1
Isolation : S12 (dB)
-22.2
2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : V
(V)
DD
(9) 入力IP3 - 電源端子電圧特性例 (10) 入力IP2 - 電源端子電圧特性例
XC2407A816
VDD=VCE, Ta=25℃,
-4
-4.5
-5
-5.5
-6
-6.5
-7
Input Power IP3 : IIP3 (dBm)
2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : V
f=1.575GHz, 1.576GHz
(V)
DD
(11)
Input Power @ 1dB Gain Compression vs. Power Supply Voltage
(11) 1dB利得圧縮時入力電力 - 電源端子電圧特性例 (12) 挿入電力利得 - 周囲温度特性例
-15
XC2407A816
VDD=V
CE、
Ta=25℃, f=1.575GHz
-16
-17
Input Power @ 1dB Gain Compression
-18
: P1dB (dBm)
-19
-20
2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : V
(V)
DD
(8) Noise Figure vs. Power Supply Voltage
XC2407A816
VDD=V
Ta=25℃, f=1.575GHz
1.6
CE、
1.4
1.2
1
0.8
0.6
Noise Figure : NF (dB)
0.4
2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : V
(V)
DD
(10) Input Power IP2 vs. Power Supply Voltage
XC2407A816
VDD=VCE, Ta=25℃,
=0.8GHz, 2.375GHz
14
13
12
11
10
9
Input Power IP2 : IIP2 (dBm)
2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : V
(V)
DD
(12) Power Gain vs. Ambient Temperature
XC2407A816
18
17
16
15
14
Power Gain : S21 (dB)
13
-50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃)
VDD=VCE=2.85V,f=1.575GHz
11/18
Page 12
XC2407A816UR-G
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(13) Input Return Loss vs. Ambient Temperature
(13) 入力側リタンロ- 周囲温度特性例 (14) 出力側リタ- 周囲温度特性例
(15) Isolation vs. Ambient Temperature
(15) イソレーシ - 周囲温度特性例 (16) 雑音指数 - 周囲温度特性例
(17) Input Power IP3 vs. Ambient Temperature
(17) 入力IP3 - 周囲温度特性例 (18) 入力IP2 - 囲温度特性例
Input Return Loss : S11 (dB)
Isolation : S12 (dB)
Input Power IP3 : IIP3 (dBm)
-9
-9.2
-9.4
-9.6
-9.8
-10
-10.2
-10.4
-10.6
-10.8
-11
-21.5
-22
-22.5
-23
-3
-3.5
-4
-4.5
-5
-5.5
-6
-6.5
-7
XC2407A816
VDD=VCE=2.85V,f=1.575GHz
-50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃)
XC2407A816
VDD=VCE=2.85V,f=1.575GHz
-50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃)
XC2407A816
VDD=VCE=2.85V,
f=1.575GHz, 1.576GHz
-50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃)
(14) Output Return Loss vs. Ambient Temperature
XC2407A816
-9
-9.5
-10
-10.5
-11
Output Return Loss : S22 (dB)
-50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃)
VDD=VCE=2.85V,f=1.575GHz
(16) Noise Figure vs. Ambient Temperature
XC2407A816
2
1.8
1.6
1.4
1.2 1
0.8
0.6
0.4
0.2
Noise Figure : NF (dB)
0
-50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃)
VDD=VCE=2.85V,f=1.575GHz
(18) Input Power IP2 vs. Ambient Temperature
XC2407A816
12
11.5
11
10.5
10
9.5
9
Input Power IP2 : IIP2 (dBm)
-50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃)
VDD=VCE=2.85V,
f=0.8GHz, 2.375GHz
12/18
Page 13
Input
Power
@
1dB
Gain
:P1dB(dBm)
: P1dB (dBm)
XC2407A816UR-G
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(19) Input Power @ 1dB Gain Compression vs. Ambient Temperature
(19) 1dB利得圧縮時入力電力 - 周囲温度特性例
(21) Input Return Loss vs. Frequency
(21) 入力側リタンロ- 周波数特性 (22) 出力側リタ- 周波数特性例
(23) Isolation vs. Frequency
(23) アイソレーション - 周波数特性例 (24) 挿入電力利得-入力電力特性
-15
-16
-17
-18
Compression
-19
-20
Input Power @ 1dB Gain Compression
0
-2
-4
-6
-8
-10
-12
Input Return Loss : S11 (dB)
1 1.2 1.4 1.6 1.8 2
0
-10
-20
-30
-40
Isolation : S12 (dB)
-50
-60
XC2407A816
VDD=VCE=2.85V,f=1.575GHz
-50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃)
XC2407A816
VDD=VCE=2.85V
25℃
-40℃ 85℃
Frequency : f (GHz)
XC2407A816
VDD=VCE=2.85V
25℃
-40℃ 85℃
1 1.2 1.4 1.6 1.8 2
Frequency : f (GHz)
(20) Power Gain vs. Frequency
(20) 挿入電力利得 - 周波数特性例
XC2407A816
20 18 16 14 12 10
85℃
8 6
Power Gain : S21 (dB)
4
1 1.2 1.4 1.6 1.8 2
Frequency: f (GHz)
-40℃
(22) Output Return Loss vs. Frequency
XC2407A816
0
-2
-4
-6
-8
-10
-12
-14
-16
Output Return Loss : S22 (dB)
1 1.2 1.4 1.6 1.8 2
Frequency : f (GHz)
(24) Power Gain vs. Input Power
XC2407A816
(dBm)
IN
VDD=VCE=2.85V
20 18 16 14 12 10
8
Power Gain : S21 (dB)
6
-40 -35 -30 -25 -20 -15 -10
25℃
85℃
Input Power : P
-40℃
VDD=VCE=2.85V
25℃
VDD=VCE=2.85V
25℃
-40℃ 85℃
13/18
Page 14
XC2407A816UR-G
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(25) Output Power / IM3 vs. Input Power
(25) 出力電力/IM3 入力電力特性例 (26)入力側リタ-周波数特性例 (スミス図)
(dBm)
OUT
0
-20
-40
-60
XC2407A816
VDD=VCE=2.85V, Ta=25℃,
f=1.575GHz, 1.576GHz
Desire
100
80
Undesire
60
40
-80
-100
Output Power : P
-60 -50 -40 -30 -20 -10 0 Input Power : P
IM3
(dBm)
IN
20
0
(27) 出力リタンロス -周波数特性例 (スミス図)
(27) Output Return Loss vs. Frequency (Smith Chart)
XC2407A816
V
DD=VCE
f=1GHz~2GHz
(26) Input Return Loss vs. Frequency (Smith Chart)
XC2407A816
Inter-Modulation distortion: IM3 (dBm)
=2.85V, Ta=25
f=1.575GHz
VDD=VCE=2.85V, Ta=25
f=1GHz~2GHz
f=1.575GHz
14/18
Page 15
PACKAGING INFORMATION
USP-8A01 (unit:mm)
0.1±0.05 0.1±0.05
3
2
1
0.3±0.05 0.3±0.050.2±0.05
1.5±0.05
1PIN INDENT
4
5
6
7
8
XC2407A816UR-G
15/18
Page 16
XC2407A816UR-G
PACKAGING INFORMATION (Continued)
USP-8A01Reference Pattern Layout (unit:mm)
0.450.350.35
0.5 0.5
0.25 0.25 0.35
USP-8A01Reference Metal Mask Design (unit:mm)
Is cupper area.
Mark is opening of resist.
0.75
0.250.250.25
0.35※0.35※0 .35
1.9
0.75
0.85 0.85
2.0
16/18
Page 17
MARKING RULE
USP-8A01
1
2
3
8
7
6
5
4
represents product series.
MARK PRODUCT SERIES
7 XC2407******-G
represents product.
MARK
A XC2407A*****-G
represents product.
MARK
8 XC2407*8****-G
PRODUCT SERIES
PRODUCT SERIES
XC2407A816UR-G
, represents production lot number.
01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ and B1 to ZZ in order. (G, I, J, O, Q, W excepted) *No character inversion used.
17/18
Page 18
XC2407A816UR-G
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
18/18
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