Page 1

XC2406A816UR-G
ETR2704-002a
1.6GHz ON/OFF Function LNA
GENERAL DESCRIPTION
The XC2406A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power
consumption using CMOS process, The XC2406 is designed for GPS band frequency (1.6GHz).
The IC's internal circuit can be placed in stand-by mode via the CE function, In the stand-by mode, consumption current is greatly
reduced and there is no need to add external ON/OFF control function like LDO.
External R
3.45V, 3.00V, 2.85V and 1.80V.
.
■APPLICATIONS
●GPS band RF signal amplified
TYPICAL APPLICATION CIRCUIT
can adjust power supply to any voltage of 1.71V~3.63V as self bias function. Standard power supply voltages are
BIAS
FEATURES
Noise Figure :NF=0.96dB(TYP.) (@ 1.575GHz)
Low Power Consumption
:11.88mW (TYP.) (V
=1.80V, R
DD
High Gain :S21=18dB(TYP.) (@ 1.575GHz)
CE Function :
CE “H” Voltage 1.1V〜V
(1.71V≦VDD≦
DD
CE “L” Voltage 0V〜0.4V
Operation Voltage Range
:1.71V〜3.63V
Output :CMOS Output, 50Ω Driver Built-in
Operating Temperature Range
:- 40℃〜+ 85℃
Package :USP-8A01
Environmentally Friendly
:EU RoHS Compliant, Pb Free
TYPICAL PERFORMANCE
CHARACTERISTICS
BIAS
=92Ω)
3.15V)
P
IN
10nH
6.2nH
3.9pF
VDD [V] (TYP.) R
R
BIAS2
RF_IN
V
SS1
V
SS2
CE
V
TOP VIEW
BIAS
RF_OUT
CE
[Ω]
3.45 390
3.00 300
2.85 270
1.80 92
* R
should be used in ±1% tolerance and ±200ppm/℃ temperature stability.
BIAS
R
BIAS
C
R
BIAS1
V
DD
7.5nH
BIAS
P
OUT
V
DD
Power Gain / Noise Figure vs. Frequency
XC2406A816
VDD=VCE=2.85V, Ta=25℃
25
20
15
10
Power Ga in : S21 (dB)
5
0
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2
Frequency : f (GHz)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Noise Figure : NF (dB)
1/18
Page 2

XC2406A816UR-G
■BLOCK DIAGRAM
* Diodes inside the circuit are an ESD protection diode.
■PRODUCT CLASSIFICATION
●Ordering Information
PRODUCT NAME PACKAGE ORDER UNIT
XC2406A816UR-G
(*1)
The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
(*1)
USP-8A01 3,000 / Reel
2/18
Page 3

XC2406A816UR-G
■PIN CONFIGURATION
USP-8A01
(BOTTOM VIEW)
■PIN ASSIGNMENT
PIN NUMBER PIN NAME FUNCTION
1 RF_IN RF Signal Input
2 V
3 V
Ground
SS1
Ground
SS2
4 CE ON/OFF Control Pin
5 RF_OUT RF Signal Output
6 VDD Power Supply
7 R
8 R
R
BIAS1
R
BIAS2
Connect Pin
BIAS
Connect Pin
BIAS
■FUNCTION CHART
PIN NAME SIGNAL STATUS
CE Low Stand-by
CE
CE High Active
CE OPEN Undefined State
3/18
Page 4

XC2406A816UR-G
■ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNITS
Power Supply Voltage VDD
CE Input Voltage VCE
Current Circuit IDD 42 mA
R
Input Voltage R
BIAS1
R
Input Voltage R
BIAS2
BIAS1
BIAS2
RF Input Power PIN 10 dBm
RF_IN Input Voltege V
RF_OUT Input Voltege V
RF_IN
RF_OUT
Power Dissipation Pd 120 mW
Operating Ambient Temperature Topr
Storage Temperature Tstg
* All voltages are described based on the V
V
pin and V
SS1
(*1)
The maximum value should be either VDD+0.3V or +4.0V in the lowest.
(*2)
The maximum value should be either R
pin should be connected each other outside.
SS2
and V
SS1
+0.3V or +1.6V in the lowest.
BIAS2
SS2
pin.
-0.3~VDD+0.3 or 4.0
-0.3~VDD+0.3 or 4.0
-0.3~R
-0.3~R
Ta =2 5℃
-0.3~4.0
(*1)
(*1)
-0.3~+1.6
(*2)
+0.3 or +1.6
BIAS2
+0.3 or +1.6
BIAS2
(*2)
-40~+85 ℃
-55~+125 ℃
V
V
V
V
V
V
4/18
Page 5

XC2406A816UR-G
■ELECTRICAL CHARACTERISTICS
●DC Characteristics Ta= 25 ℃
PAR AMETER SYMBOL CONDITIONS
R
=390Ω
BIAS
R
=300Ω
Power Supply Voltage
Current Circuit
Stand-by Current
VDD
I
I
STBY
DD
BIAS
R
BIAS
R
BIAS
1.71V≦V
V
1.71V≦V
=270Ω
CE=VDD
V
CE
=92Ω
≦3.63V
DD
≦3.63V
DD
=0V
(*2)
3.278 3.450 3.630 V ①
(*2)
2.850 3.000 3.150 V ①
(*2)
2.708 2.850 2.992 V ①
(*2)
1.710 1.800 1.890 V ①
(*1)
(*1)
MIN. TYP. MAX.
- 6.6 8.9 mA ①
- - 0.1 μA ①
1.71V≦VDD≦3.15V 1.1 - VDD V ①
CE "H" Level Voltage
CE "L" Level Voltage
(*1)
For the relation of VDD and R
(*2)
R
should be used in ±1% tolerance and ±200ppm/℃ temperature stability.
BIAS
V
CEH
- 0 - 0.4 V ①
V
CEL
, Please refer to the “Power Supply Voltage vs. R
BIAS
3.15V<VDD≦3.63V 1.3 - VDD V ①
Table” below.
BIAS
●AC Characteristics VDD=VCE=2.85V, R
PARAMETER SYMBOL CONDITIONS
MIN. TYP. MAX.
Power Gain S21 f=1.575 GHz 15.0 18.0 - dB ②
Input Return Loss S11 f=1.575GHz - 7.5 -
Output Return Loss S22 f=1.575GHz - 13 -
Isolation S12 f=1.575GHz - -33 -
Noise Figure
Input Power IP3
Input Power IP2
Input Power @ 1dB
Gain Conpression
(*1)
NF is the value excluding the substrate loss.
Power Supply Voltage vs. R
VDD [V]
3.278~3.630
2.850~3.150
2.708~2.992
1.710~1.890
(*1)
NF f=1.575GHz - 0.96 - dB ③
f=1.575GHz, 1.576GHz - -20 - dBm ④
I
IP3
f=0.8GHz, 2.375GHz - 12.2 - dBm ④
I
IP2
P1dB f=1.575GHz - -28.0 - dBm ②
BIAS
R
[Ω]
BIAS
390
300
270
92
UNITS CIRCUIT
=270Ω, Ta=25℃
BIAS
UNITS CIRCUIT
dB
dB
dB
②
②
②
5/18
Page 6

XC2406A816UR-G
■NOTE ON USE
1.
For temporary, transitional voltage drop or voltage rising phenomenon, the IC is liable to malfunction should the ratings be exceeded.
2. Please eliminate static electricity from the operational table, people, and soldering iron.
3. Please use noiseless power supply for stable operation.
4. Please connect C
5. V
6. Please ensure to use an external component which does not depend on bias or temperature too much.
7. Torex places an importance on improving our products and their reliability.
pin and V
SS1
We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems.
to R
BIAS
pin should be connected each other outside.
SS2
pin as close as possible.
BIAS2
6/18
Page 7

XC2406A816UR-G
■TEST CIRCUITS
●Circuit ① (DC Characteristics: Power Supply Pin Voltage, Circuit Current, Stand-by current)
R
BIAS2
P
IN
RF_IN
V
SS1
V
SS2
R
BIAS1
V
DD
RF_OUT
CE
V
CE
* PIN / P
OUT
is 50Ω
R
BIAS
C
BIAS
A
P
OUT
V
V
DD
●Circuit ② (Power Gain, Input Return Loss, Output Return Loss, Isolation, Input Power @ 1dB Gain Compression)
●Circuit ③ (Noise Figure)
(*1)
Refer to the circuit ⑤ for the block detail.
(*1)
Refer to the circuit ⑤ for the block detail.
7/18
Page 8

XC2406A816UR-G
■TEST CIRCUITS (Continued)
●Circuit ④ (Input Power IP3, Input Power IP2)
●Circuit ⑤ (XC2406 series, the circuit of the block)
(*1)
Refer to the circuit ⑤ for the block detail.
P
IN
RF_IN
V
6.2nH
10nH
V
3.9pF
VDD [V] (TYP.) R
BIAS
3.45 420
3.00 390
2.85 360
1.80 120
* R
should be used in ±1% tolerance and ±200ppm/℃ temperature stability.
BIAS
[Ω]
SS1
SS2
R
BIAS2
CE
V
CE
R
BIAS1
V
DD
RF_OUT
R
BIAS
7.5nH
C
BIAS
P
OUT
V
DD
8/18
Page 9

XC2406A816UR-G
■TEST CIRCUITS (Continued)
Evaluation Board
18mm
V
DD
20mm
R
C1
P
IN
L2
L1
C2
BIAS
L3
P
OUT
V
SS
V
CE
PCB (FR-4)
MICROSTRIPLINE WIDTH=0.6mm
t=0.18mm
PCB size=18mm × 20mm
* Please use an external component which does not depend on bias or temperature too much.
External Components
SYMBOL SPEC COMMENT
C1 10nF -
C2 3.9pF -
L1 6.2nH
MURATA
(LQW15A6N2G00D)
L2 10nH
MURATA
(LQW15A10NG00D)
L3 7.5nH
R
-
BIAS
MURATA
(LQW15A7N5G00D)
Less than ±1% tolerance,
Less than ±200ppm / ℃ temperature stability
9/18
Page 10

XC2406A816UR-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Current Circuits vs. Supply Voltage
(1) 回路電流 - 電源端子電圧特性例
7.5
7
(mA)
DD
6.5
6
5.5
Current Circuits : I
5
XC2406A816
VDD=VCE, Ta=25℃
2.6 2.7 2.8 2.9 3 3.1
Power Supply Voltage : V
(V)
DD
(3) CE “L” Level Voltage vs. Power Supply Voltage
(3) CE"L"レベル電圧 - 電源端子電圧特性例 (4) 挿入電力利得 - 電源端子電圧特性例
1.1
(V)
1
CEL
0.9
0.8
0.7
0.6
0.5
0.4
CE "L" Level Voltage : V
2.6 2.7 2.8 2.9 3 3.1
XC2406A816
Power Supply Voltage : V
Ta=25℃
(V)
DD
(5) Input Return Loss vs. Power Supply Voltage
(5) 入力側リターンロス - 電源端子電圧特性例 (6) 出力側リターンロス - 電源端子電圧特性例
-6
-6.5
-7
-7.5
-8
-8.5
-9
Input Return Loss : S11 (dB)
2.6 2.7 2.8 2.9 3 3.1
XC2406A816
VDD=V
Ta=25℃, f=1.575GHz
CE,
Power Supply Voltage : V
(V)
DD
(2) CE “H” Level Voltage vs. Supply Voltage
(2) CE"H"レベル電圧 - 電源端子電圧特性例
XC2406A816
1.1
(V)
1
CEH
0.9
0.8
0.7
0.6
0.5
0.4
CE "H" Level Voltage : V
2.6 2.7 2.8 2.9 3 3.1
Power Supply Voltage : V
(4) Power Gain vs. Power Supply Voltage
XC2406A816
VDD=V
19
CE,
18.5
18
17.5
Power Gain : S21 (dB)
17
2.6 2.7 2.8 2.9 3 3.1
Power Supply Voltage : V
(6) Output Return Loss vs. Supply Voltage
XC2406A816
VDD=V
Ta=25℃, f=1.575GHz
-12
-12.5
-13
-13.5
-14
Output Return Loss : S22 (dB)
2.6 2.7 2.8 2.9 3 3.1
Power Supply Voltage : V
CE,
Ta=25℃
(V)
DD
Ta=25℃, f=1.575GHz
(V)
DD
(V)
DD
10/18
Page 11

XC2406A816UR-G
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(7) Isolation vs. Power Supply Voltage
(7) アイソレーション - 電源端子電圧特性例 (8) 雑音指数 - 電源端子電圧特性例
-30
-31
-32
-33
-34
Isolation : S12 (dB)
-35
XC2406A816
VDD=V
Ta=25℃, f=1.575GHz
CE、
2.6 2.7 2.8 2.9 3 3.1
Power Supply Voltage : V
(V)
DD
(9) Input Power IP3 vs. Power Supply Voltage
(9) 入力IP3 - 電源端子電圧特性例 (10) 入力IP2 - 電源端子電圧特性例
-17
-18
-19
-20
-21
-22
-23
Input Power IP3 : IIP3 (dBm)
XC2406A816
VDD=VCE, Ta=25℃,
f=1.575GHz, 1.576GHz
2.6 2.7 2.8 2.9 3 3.1
Power Supply Voltage : V
(V)
DD
(11)
Input Power @ 1dB Gain Compression vs. Power Supply Voltage
(11) 1dB利得圧縮時入力電力 - 電源端子電圧特性例 (12) 挿入電力利得 - 周囲温度特性例
XC2406A816
VDD=V
Ta=25℃, f=1.575GHz
-27
-27.5
-28
-28.5
-29
-29.5
-30
Input Power @ 1dB Gain
Compression : P1dB (dBm)
2.6 2.7 2.8 2.9 3 3.1
Power Supply Voltage : V
CE、
(V)
DD
(8) Noise Figure vs. Power Supply Voltage
XC2406A816
VDD=V
Ta=25℃, f=1.575GHz
1.6
CE、
1.4
1.2
1
0.8
0.6
0.4
Noise Figure : NF (dB)
2.6 2.7 2.8 2.9 3 3.1
Power Supply Voltage : V
(V)
DD
(10) Input Power IP2 vs. Power Supply Voltage
XC2406A816
15
14
13
12
11
10
Input Power IP2 : IIP2 (dBm)
2.6 2.7 2.8 2.9 3 3.1
Power Supply Voltage : V
VDD=VCE, Ta=25℃,
f=0.8GHz, 2.375GHz
(V)
DD
(12) Power Gain vs. Ambient Temperature
XC2406A816
22
21
20
19
18
17
16
15
Power Gain : S21 (dB)
14
-50 -25 0 25 50 75 100
Ambient Temperature : Ta (℃)
VDD=VCE=2.85V,f=1.575GHz
11/18
Page 12

XC2406A816UR-G
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(13) Input Return Loss vs. Ambient Temperature
(13) 入力側リターンロス - 周囲温度特性例 (14) 出力側リターンロス - 周囲温度特性例
(15) Isolation vs. Ambient Temperature
(15) アイソレーション - 周囲温度特性例 (16) 雑音指数 - 周囲温度特性例
(17) Input Power IP3 vs. Ambient Temperature
(17) 入力IP3 - 周囲温度特性例 (18) 入力IP2 - 周囲温度特性例
-5
-6
-7
-8
-9
-10
Input Return Loss : S11 (dB)
-50 -25 0 25 50 75 100
-30
-30.5
-31
-31.5
-32
-32.5
-33
-33.5
Isolation : S12 (dB)
-34
-17
-18
-19
-20
-21
-22
-23
Input Power IP3 : IIP3 (dBm)
-50 -25 0 25 50 75 100
XC2406A816
VDD=VCE=2.85V,f=1.575GHz
Ambient Temperature : Ta (℃)
XC2406A816
VDD=VCE=2.85V,f=1.575GHz
-50 -25 0 25 50 75 100
Ambient Temperature : Ta (℃)
XC2406A816
VDD=VCE=2.85V,
f=1.575GHz, 1.576GHz
Ambient Temperature : Ta (℃)
(14) Output Return Loss vs. Ambient Temperature
XC2406A816
-10
-11
-12
-13
-14
-15
-16
Output Return Loss : S22 (dB)
-50 -25 0 25 50 75 100
Ambient Temperature : Ta (℃)
VDD=VCE=2.85V,f=1.575GHz
(16) Noise Figure vs. Ambient Temperature
XC2406A816
2
1.5
1
0.5
Noise Figure : NF (dB)
0
-50 -25 0 25 50 75 100
Ambient Temperature : Ta (℃)
VDD=VCE=2.85V,f=1.575GHz
(18) Input Power IP2 vs. Ambient Temperature
XC2406A816
15
14
13
12
11
10
Input Power IP2 : IIP2 (dBm)
-50 -25 0 25 50 75 100
Ambient Temperature : Ta (℃)
VDD=VCE=2.85V,
f=0.8GHz, 2.375GHz
12/18
Page 13

XC2406A816UR-G
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(19) Input Power @ 1dB Gain Compression vs. Ambient Temperature
(19) 1dB利得圧縮時入力電力 - 周囲温度特性例 (20) 挿入電力利得 - 周波数特性例
(21) Input Return Loss vs. Frequency
(21) 入力側リターンロス - 周波数特性例 (22) 出力側リターンロス - 周波数特性例
(23) アイソレーション - 周波数特性例 (24) 挿入電力利得-入力電力特性例
(23) Isolation vs. Frequency
-27
-27.5
-28
-28.5
-29
-29.5
-30
Input Power @ 1dB Gain
Compression : P1dB (dBm)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
Input Return Loss : S11 (dB)
-20
-40
-60
-80
Isolation : S12 (dB)
-100
XC2406A816
VDD=VCE=2.85V,f=1.575GH
-50 -25 0 25 50 75 100
Ambient Temperature : Ta (℃)
XC2406A816
VDD=VCE=2.85V
-40℃
25℃
85℃
1 1.2 1.4 1.6 1.8 2
Frequency : f (GHz)
XC2406A816
VDD=VCE=2.85V
0
25℃
-40℃
85℃
1 1.2 1.4 1.6 1.8 2
Frequency : f (GHz)
(20) Power Gain vs. Frequency
XC2406A816
28
26
24
22
20
18
16
14
12
Power Gain : S21 (dB)
10
1 1.2 1.4 1.6 1.8 2
-40℃
85℃
Frequency : f (GHz)
VDD=VCE=2.85V,f=1.575GHz
25℃
(22) Output Return Loss vs. Frequency
XC2406A816
25℃
VDD=VCE=2.85V
85℃
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
Output Return Loss : S22 (dB)
1 1.2 1.4 1.6 1.8 2
-40℃
Frequency : f (GHz)
(24) Power Gain vs. Input Power
XC2406A816
(dBm)
IN
VDD=VCE=2.85V
26
24
22
20
18
16
14
12
10
8
6
Power Gain : S21 (dB)
4
-40 -35 -30 -25 -20 -15 -10
25℃
85℃
Input Power : P
-40℃
13/18
Page 14

XC2406A816UR-G
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(25) Output Power / IM3 vs. Input Power
(25) 出力電力/IM3 - 入力電力特性例 (26)入力側リターンロス -周波数特性例 (スミス図)
0
-10
-20
(dBm)
-30
OUT
-40
-50
-60
-70
Output Power : P
-80
-60 -50 -40 -30 -20 -10 0
XC2406A816
Desire
Input Power : P
VDD=VCE=2.85V, Ta=25℃,
f=1.575GHz, 1.576GHz
Undesire
IM3
(dBm)
IN
80
70
60
50
40
30
20
10
0
Inter-Modulation
(27) 出力リターンロス -周波数特性例 (スミス図)
(27) Output Return Loss vs. Frequency (Smith Chart)
XC2406A816
VDD=VCE=2.85V, Ta=25
f=1GHz~2GHz
f=1.575GHz
℃
(26) Input Return Loss vs. Frequency (Smith Chart)
XC2406A816
VDD=VCE=2.85V, Ta=25
distortion: IM3 (dBm)
f=1GHz~2GHz
f=1.575GHz
℃
14/18
Page 15

XC2406A816UR-G
■PACKAGING INFORMATION
●USP-8A01 (unit:mm)
0.1±0.05 0.1±0.05
3
2
1
0.3±0.05 0.3±0.050.2±0.05
1.5±0.05
1PIN INDENT
4
5
6
7
8
15/18
Page 16

XC2406A816UR-G
■PACKAGING INFORMATION (Continued)
●USP-8A01Reference Pattern Layout (unit:mm)
※0.45※0.35※0.35
0.5 0.5
0.25 0.25 0.35
●USP-8A01Reference Metal Mask Design (unit:mm)
Is cupper area.
Mark ※ is opening of resist.
0.75
0.250.250.25
※0.35※0.35※0 .35
1.9
0.75
※0.85 ※0.85
※2.0
16/18
Page 17

XC2406A816UR-G
■MARKING RULE
USP-8A01
1
2
3
④ ⑤
8
① ② ③
7
6
5
4
① represents product series.
MARK PRODUCT SERIES
6 XC2406******-G
② represents product.
MARK
②
A XC2406A*****-G
③ represents product.
MARK
③
8 XC2406*8****-G
PRODUCT SERIES
PRODUCT SERIES
④,⑤ represents production lot number.
01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ and B1 to ZZ in order.
(G, I, J, O, Q, W excepted)
*No character inversion used.
17/18
Page 18

XC2406A816UR-G
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
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