Datasheet X25330S8, X25330V14I-2,5, X25330V14I, X25330V14-2,5, X25330S8I-2,5 Datasheet (XICOR)

...
Page 1
5MHz SPI Serial E
2
PROM with Block Lock
TM
Protection
4K x 8 Bit
Xicor, Inc. 1994 - 1997 Patents Pending 1 Characteristics subject to change without notice
7048–1.0 6/18/97 T0/C0/D0 SH
X25330
FEATURES
5MHz Clock Rate
Low Power CMOS
<1 µ A Standby Current <5mA Active Current
2.5V To 5.5V Power Supply
SPI Modes (0,0 & 1,1)
4K X 8 Bits
32 Byte Page Mode
Block Lock™ Protection
Protect 1/4, 1/2 or all of E
2
PROM Array
Programmable Hardware Write Protection
In-Circuit Programmable ROM Mode
Built-in Inadvertent Write Protection
Power-Up/Down protection circuitry Write Enable Latch Write Protect Pin
Self-Timed Write Cycle
5ms Write Cycle Time (Typical)
High Reliability
Endurance: 100,000 cycles Data Retention: 100 Years ESD protection: 2000V on all pins
Packages
8-Lead SOIC 14-Lead TSSOP
DESCRIPTION
The X25330 is a CMOS 32K-bit serial E
2
PROM, inter­nally organized as 4K x 8. The X25330 features a Serial Peripheral Interface (SPI) and software protocol allowing operation on a simple three-wire bus. The bus signals are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a chip select (CS
) input, allowing
any number of devices to share the same b us. The X25330 also features two additional inputs that
provide the end user with added flexibility. By asserting the HOLD
input, the X25330 will ignore tran­sitions on its inputs, thus allowing the host to service higher priority interrupts. The WP input can be used as a hardwire input to the X25330 disabling all write attempts to the status register, thus providing a mech­anism for limiting end user capability of altering 0, 1/4, 1/2 or all of the memory .
The X25330 utilizes Xicor’s proprietary Direct Write
TM
cell, providing a minimum endurance of 100,000 cycles and a minimum data retention of 100 years.
COMMAND
DECODE
AND
CONTROL
LOGIC
WRITE
CONTROL
AND
TIMING
LOGIC
WRITE
PROTECT
LOGIC
X DECODE
LOGIC
4K BYTE
ARRAY
32 X 256
Y DECODE
DATA REGISTER
SO
SI
SCK
CS
HOLD
WP
32
64
832
STATUS
REGISTER
32
64 X 256
32 X 256
7037 FRM F01
Direct Write and Block Lock Protection is a trademark of Xicor, Inc.
FUNCTIONAL DIAGRAM
Page 2
X25330
2
PIN DESCRIPTIONS Serial Output (SO)
SO is a push/pull serial data output pin. During a read cycle, data is shifted out on this pin. Data is clocked out by the falling edge of the serial clock.
Serial Input (SI)
SI is the serial data input pin. All opcodes, byte addresses, and data to be written to the memory are input on this pin. Data is latched by the rising edge of the serial clock.
Serial Clock (SCK)
The Serial Clock controls the serial bus timing for data input and output. Opcodes , addresses , or data present on the SI pin are latched on the rising edge of the clock input, while data on the SO pin change after the falling edge of the clock input.
Chip Select (CS)
When CS is HIGH, the X25330 is deselected and the SO output pin is at high impedance and unless an internal write operation is underway, the X25330 will be in the standby power mode. CS LOW enables the X25330, placing it in the active power mode. It should be noted that after power-up, a HIGH to LOW transition on CS is required prior to the start of any operation.
Write Protect (WP)
When WP is LOW and the nonvolatile bit WPEN is “1”, nonvolatile writes to the X25330 status register are disabled, but the part otherwise functions normally. When WP is held HIGH, all functions, including nonvolatile writes operate normally. WP going LOW while CS is still LOW will interrupt a write to the
X25330 status register. If the internal write cycle has already been initiated, WP
going LOW will have no
affect on a write. The WP pin function is blocked when the WPEN bit in
the status register is “0”. This allows the user to install the X25330 in a system with WP pin grounded and still be able to write to the status register. The WP pin func­tions will be enabled when the WPEN bit is set “1”.
Hold (HOLD)
HOLD is used in conjunction with the CS pin to pause the device. Once the part is selected and a serial sequence is underway, HOLD
may be used to pause
7037 FRM F02
CS SO
WP
V
SS
1 2 3 4
8 7 6 5
V
CC
HOLD SCK SI
SOIC
X25330
CS SO SO NC NC
WP
V
SS
V
CC
HOLD HOLD NC NC SCK SI
TSSOP
1 2 3 4 5 6 7
14 13 12 11 10
9 8
X25330
NOT TO SCALE
0.197" Max
0.200" Max
0.252"
0.244"
* Pin 2 and Pin 3 are internally connected. Only one CS
needs to
be connected externally .
PIN NAMES
7037 FRM T01
Symbol Description
CS
Chip Select Input SO Serial Output SI Serial Input SCK Serial Clock Input
WP
Write Protect Input V
SS
Ground V
CC
Supply Voltage
HOLD
Hold Input NC No Connect
PIN CONFIGURATION
Page 3
X25330
3
the serial communication with the controller without resetting the serial sequence. To pause, HOLD
must be brought LOW while SCK is LOW. To resume communication, HOLD is brought HIGH, again while SCK is LOW. If the pause feature is not used, HOLD should be held HIGH at all times.
PRINCIPLES OF OPERATION
The X25330 is a 4K x 8 E
2
PROM designed to interface directly with the synchronous serial peripheral inter­face (SPI) of many popular microcontroller f amilies.
The X25330 contains an 8-bit instruction register. It is accessed via the SI input, with data being clocked in on the rising SCK. CS must be LOW and the HOLD and WP inputs must be HIGH during the entire operation.
Table 1 contains a list of the instructions and their opcodes. All instructions, addresses and data are transferred MSB first.
Data input is sampled on the first rising edge of SCK after CS goes LOW. SCK is static, allowing the user to stop the clock and then resume operations. If the clock line is shared with other peripheral devices on the SPI bus, the user can assert the HOLD input to place the X25330 into a “PAUSE” condition. After releasing HOLD, the X25330 will resume operation from the point when HOLD was first asserted.
Write Enable Latch
The X25330 contains a “write enable” latch. This latch must be SET before a write operation will be completed internally . The WREN instruction will set the latch and the WRDI instruction will reset the latch. This latch is automatically reset upon a power-up condition and after the completion of a byte, page, or status register write cycle.
Status Register
The RDSR instruction provides access to the status register. The status register may be read at any time, even during a write cycle. The status register is formatted as follows:
7037 FRM T02
WPEN, BL0 and BL1 are set by the WRSR instruction. WEL and WIP are read-only and automatically set by other operations.
The Write-In-Process (WIP) bit indicates whether the X25330 is busy with a write operation. When set to a “1”, a write is in progress, when set to a “0”, no write is in progress. During a write, all other bits are set to “1”.
The Write Enable Latch (WEL) bit indicates the status of the “write enable” latch. When set to a “1”, the latch is set, when set to a “0”, the latch is reset.
The Block Lock (BL0 and BL1) bits are nonvolatile and allow the user to select one of four levels of protection. The X25330 is divided into four 8K bit segments. One, two, or all four of the segments may be protected. That is, the user may read the segments but will be unable to alter (write) data within the selected segments. The partitioning is controlled as illustrated below.
7037 FRM T03
7 6 5 4 3 2 1 0
WPEN X X X BL1 BL0 WEL WIP
Status Register Bits Array Addresses
Protected
BL1 BL0
0 0 None 0 1 $0C00–$0FFF 1 0 $0800–$0FFF 1 1 $0000–$0FFF
Table 1. Instruction Set
7037 FRM T04
*Instructions are shown MSB in leftmost position. Instructions are transferred MSB first.
Instruction Name Instruction Format* Operation
WREN 0000 0110 Set the Write Enable Latch (Enable Write Operations)
WRDI 0000 0100 Reset the Write Enable Latch (Disable Write Operations) RDSR 0000 0101 Read Status Register
WRSR 0000 0001 Write Status Register
READ 0000 0011 Read Data from Memory Array beginning at selected address
WRITE 0000 0010 Write Data to Memory Array beginning at Selected Address (1 to 32
Bytes)
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X25330
4
The Write-Protect-Enable (WPEN) bit is available for the X25330 as a nonvolatile enable bit f or the WP
pin.
7037 FRM T05
Programmable Hardware Write Protection
The Write Protect (WP) pin and the nonvolatile Write Protect Enable (WPEN) bit in the Status Register control the Programmable Hardware Write Protect feature. Hardware Write Protection is enabled when WP pin is LOW, and the WPEN bit is “1”. Hardware Write Protection is disabled when either the WP pin is HIGH or the WPEN bit is “0”. When the chip is hard­ware write protected, nonvolatile writes are disabled to the Status Register, including the Block Lock bits and the WPEN bit itself, as well as the block-protected sections in the memory array. Only the sections of the memory array that are not block-protected can be written.
In Circuit Programmable ROM Mode
Note that since the WPEN bit is write protected, it cannot be changed back to a LOW state; so write protection is enabled as long as the WP pin is held LOW. Thus an In Circuit Programmable ROM function can be emplemented by hardwiring the WP pin to Vss, writing to and Block Locking the desired portion of the array to be ROM, and then progr amming the WPEN bit HIGH. The table above defines the program protect status for each combination of WPEN and
WP
.
Clock and Data Timing
Data input on the SI line is latched on the rising edge of SCK. Data is output on the SO line by the falling edge of SCK.
Read Sequence
When reading from the E
2
PROM memory array, CS is first pulled LOW to select the device. The 8-bit READ instruction is transmitted to the X25330, followed by the 16-bit address of which the last 12 are used. After the READ opcode and address are sent, the data stored in the memory at the selected address is shifted out on the SO line. The data stored in memory
WPEN
WP
WEL
Protected
Blocks
Unprotected
Blocks
Status
Register
0 X 0 Protected Protected Protected 0 X 1 Protected Writable Writable 1 LOW 0 Protected Protected Protected 1 LOW 1 Protected Writable Protected X HIGH 0 Protected Protected Protected X HIGH 1 Protected Writable Writable
at the next address can be read sequentially by continuing to provide clock pulses. The address is automatically incremented to the next higher address after each byte of data is shifted out. When the highest address is reached ($0FFF) the address counter rolls over to address $0000 allowing the read cycle to be continued indefinitely. The read operation is termi­nated by taking CS HIGH. Refer to the read E
2
PROM
array operation sequence illustrated in Figure 1. To read the status register the CS
line is first pulled LOW to select the device followed by the 8-bit RDSR instruction. After the RDSR opcode is sent, the contents of the status register are shifted out on the SO line. Figure 2 illustrates the read status register sequence.
Write Sequence
Prior to any attempt to write data into the X25330, the “Write Enable” latch must first be set by issuing the WREN instruction (See Figure 3). CS
is first taken LOW, then the WREN instruction is clocked into the X25330. After all eight bits of the instruction are trans­mitted, CS must then be taken HIGH. If the user continues the write operation without taking CS HIGH after issuing the WREN instruction, the write operation will be ignored.
To write data to the E
2
PROM memory array, the user issues the WRITE instruction, followed by the address and then the data to be written. This is minimally a thirty-two clock operation. CS must go LOW and remain LOW for the duration of the operation. The host may continue to write up to 32 bytes of data to the X25330. The only restriction is the 32 bytes must reside on the same page. If the address counter reaches the end of the page and the clock continues, the counter will “roll over” to the first address of the page and overwrite any data that may hav e been written.
For the write operation (byte or page write) to be completed, CS can only be brought HIGH after bit 0 of data byte N is clocked in. If it is brought HIGH at any other time the write operation will not be completed. Refer to Figures 4 and 5 below for a detailed illustra­tion of the write sequences and time frames in which CS going HIGH are valid.
To write to the status register, the WRSR instruction is followed by the data to be written. Data bits 0, 1, 4, 5 and 6 must be “0”. Figure 6 illustrates this sequence.
While the write is in progress following a status register or E
2
PROM write sequence, the status register may be read to check the WIP bit. During this time the WIP bit will be HIGH.
Page 5
X25330
5
Hold Operation
The HOLD
input should be HIGH (at V
IH
) under normal operation. If a data transfer is to be interr upted HOLD can be pulled LOW to suspend the transfer until it can be resumed. The only restriction is the SCK input must be LOW when HOLD is first pulled LOW and SCK must also be LOW when HOLD is released.
The HOLD input may be tied HIGH either directly to V
CC
or tied to V
CC
through a resistor.
Operational Notes
The X25330 powers-up in the following state:
• The device is in the low power standby state.
• A HIGH to LOW transition on CS
is required to enter
an active state and receive an instruction.
• SO pin is high impedance.
• The “write enable” latch is reset.
Data Protection
The following circuitry has been included to prevent in­advertent writes:
• The “write enable” latch is reset upon power-up.
• A WREN instruction must be issued to set the “write enable” latch.
• CS must come HIGH at the proper clock count in or­der to start a write cycle.
Figure 1. Read E
2
PROM Array Operation Sequence
0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30
7 6 5 4 3 2 1 0
DATA OUT
CS
SCK
SI
SO
MSB
HIGH IMPEDANCE
INSTRUCTION 16 BITADDRESS
15 14 13 3 2 1 0
7037 FRM F03
Figure 2. Read Status Register Operation Sequence
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
7 6 5 4 3 2 1 0
DATA OUT
CS
SCK
SI
SO
MSB
HIGH IMPEDANCE
INSTRUCTION
7037 FRM F04
Page 6
X25330
6
Figure 3. Write Enable Latch Sequence
Figure 4. Byte Write Operation Sequence
0 1 2 3 4 5 6 7
7037 FRM F05
CS
SI
SCK
HIGH IMPEDANCE
SO
0 1 2 3 4 5 6 7 8 9 10
CS
SCK
SI
SO
HIGH IMPEDANCE
INSTRUCTION 16 BIT ADDRESS DATA BYTE
7 6 5 4 3 2 1 015 14 13 3 2 1 0
20 21 22 23 24 25 26 27 28 29 30 31
7037 FRM F06
Page 7
X25330
7
Figure 6. Write Status Register Operation Sequence
Figure 5. Page Write Operation Sequence
32 33 34 35 36 37 38 39
SCK
SI
CS
0 1 2 3 4 5 6 7 8 9 10
SCK
SI
INSTRUCTION 16 BITADDRESS DATA BYTE 1
7 6 5 4 3 2 1 0
CS
40 41 42 43 44 45 46 47
DATA BYTE 2
7 6 5 4 3 2 1 0
DATA BYTE 3
7 6 5 4 3 2 1 0
DATA BYTE N
15 14 13 3 2 1 0
20 21 22 23 24 25 26 27 28 29 30 31
6 5 4 3 2 1 0
7037 FRM F07
0 1 2 3 4 5 6 7 8 9
CS
SCK
SI
SO
HIGH IMPEDANCE
INSTRUCTION DATA BYTE
7 6 5 4 3 2 1 0
10 11 12 13 14 15
7037 FRM F08
Page 8
X25330
8
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias....................–65 ° C to +135 ° C
Storage Temperature........................–65 ° C to +150 ° C
Voltage on any Pin with Respect to V
SS
.........................................................–1V to +7V
D.C. Output Current ............................................. 5mA
(Soldering, 10 seconds) ..............................300 ° C
D.C. OPERATING CHARACTERISTICS (Over the recommended operating conditions unless otherwise specified.)
7037 FRM T08
POWER-UP TIMING
7037 FRM T09
CAPACITANCE T
A
= +25 ° C, f = 1MHz, V
CC
= 5V
7037 FRM T10
Notes: (1) V
IL
min. and V
IH
max. are f or ref erence only and are not tested. (2) This parameter is periodically sampled and not 100% tested. (3) t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated. These
parameters are periodically sampled and not 100% tested.
Symbol Parameter
Limits
Units Test Conditions
Min. Max.
I
CC
V
CC
Supply Current (Active) 5 mA SCK = V
CC
x 0.1/V
CC
x 0.9 @ 5MHz,
I
SB
V
CC
Supply Current (Standby) 1
µ
A CS = VCC, VIN = VSS or VCC – 0.3V
I
LI
Input Leakage Current 10 µA VIN = VSS to VCC
I
LO
Output Leakage Current 10 µA V
OUT
= VSS to V
CC
V
IL
(1)
Input LOW Voltage –1 VCC x 0.3 V
V
IH
(1)
Input HIGH Voltage VCC x 0.7 VCC + 0.5 V
V
OL1
Output LOW Voltage 0.4 V IOL = 3mA, VCC = 5V
V
OH1
Output HIGH Voltage VCC–0.8 V IOH = –1.6mA, VCC = 5V
V
OL2
Output LOW Voltage 0.4 V IOL = 1.5mA, VCC = 3V
V
OH2
Output HIGH Voltage VCC–0.3 V IOH = –0.4mA, VCC = 3V
Symbol Parameter Min. Max. Units
T
PUR
(3)
Power-up to Read Operation 1 ms
T
PUW
(3)
Power-up to Write Operation 1 ms
Symbol Parameter Max. Units Test Conditions
C
I/O
(3)
Output Capacitance (SO) 8 pF V
I/O
= 0V
C
IN
(3)
Input Capacitance (SCK, SI, CS, WP, HOLD) 6 pF VIN = 0V
RECOMMENDED OPERATING CONDITIONS
7037 FRM T06
Temperature Min. Max.
Commercial 0°C +70°C
Industrial –40°C +85°C
7037 FRM T07
Supply Voltage Limits
X25330 5V ±10%
X25330-2.5 2.5V to 5.5V
*COMMENT
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and the functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Page 9
X25330
9
A.C. OPERATING CHARACTERISTICS Data Input Timing
7037 FRM T12
Data Output Timing
7037 FRM T13
Notes: (4) This parameter is periodically sampled and not 100% tested.
(5) tWC is the time from the rising edge of CS after a valid write sequence has been sent to the end of the self-timed internal nonvolatile
write cycle.
Symbol Parameter Min. Max. Units
f
SCK
Clock Frequency 0 5 MHz
t
CYC
Cycle Time 200 ns
t
LEAD
CS Lead Time 100 ns
t
LAG
CS Lag Time 100 ns
t
WH
Clock HIGH Time 80 ns
t
WL
Clock LOW Time 80 ns
t
SU
Data Setup Time 20 ns
t
H
Data Hold Time 20 ns
t
RI
(4)
Data In Rise Time 2 µs
t
FI
(4)
Data In Fall Time 2 µs
t
HD
HOLD Setup Time 40 ns
t
CD
HOLD Hold Time 40 ns
t
CS
CS Deselect Time 100 ns
t
WC
(5)
Write Cycle Time 10 ms
Symbol Parameter Min. Max. Units
f
SCK
Clock Frequency 0 5 MHz
t
DIS
Output Disable Time 100 ns
t
V
Output Valid from Clock LOW 80 ns
t
HO
Output Hold Time 0 ns
t
RO
(4)
Output Rise Time 50 ns
t
FO
(4)
Output Fall Time 50 ns
t
LZ
(4)
HOLD HIGH to Output in Low Z 50 ns
t
HZ
(4)
HOLD LOW to Output in High Z 50 ns
A.C. CONDITIONS OF TEST
7037 FRM T11
Input Pulse Levels VCC x 0.1 to VCC x 0.9 Input Rise and Fall Times 10ns Input and OutputTiming Levels V
CC
X 0.5
EQUIVALENT A.C. LOAD CIRCUIT
OUTPUT
7037 FRM F09
5V
1.44K
1.95K
100pF
OUTPUT
3V
1.64K
4.63K
100pF
Page 10
X25330
10
Serial Output Timing
SCK
CS
SO
SI
MSB OUT MSB–1 OUT LSB OUT
ADDR
LSB IN
t
CYC
t
V
t
HO
t
WL
t
WH
t
DIS
7037 FRM F10
t
LAG
Serial Input Timing
SCK
CS
SI
SO
MSB IN
t
SU
t
RI
t
LAG
7037 FRM F11
t
LEAD
t
H
LSB IN
t
CS
t
FI
HIGH IMPEDANCE
Page 11
X25330
11
Hold Timing
SCK
CS
SI
SO
t
HD
7037 FRM F12
t
LZ
HOLD
t
HZ
t
CD
t
HD
t
CD
Page 12
X25330
12
PACKAGING INFORMATION
0.150 (3.80)
0.158 (4.00)
0.228 (5.80)
0.244 (6.20)
0.014 (0.35)
0.019 (0.49)
PIN 1
PIN 1 INDEX
0.010 (0.25)
0.020 (0.50)
0.050 (1.27)
0.188 (4.78)
0.197 (5.00)
0.004 (0.19)
0.010 (0.25)
0.053 (1.35)
0.069 (1.75)
(4X) 7°
0.016 (0.410)
0.037 (0.937)
0.0075 (0.19)
0.010 (0.25)
0° – 8°
X 45°
3926 FRM F22.1
8-LEAD PLASTIC SMALL OUTLINE GULL WING PACKAGE TYPE S
0.250"
0.050"TYPICAL
0.050" TYPICAL
0.030"
TYPICAL
8 PLACES
FOOTPRINT
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
Page 13
X25330
13
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
14-LEAD PLASTIC, TSSOP, PACKAGE TYPE V
See Detail “A”
.031 (.80)
.041 (1.05)
.169 (4.3) .177 (4.5)
.252 (6.4) BSC
.025 (.65) BSC
.193 (4.9) .200 (5.1)
.002 (.05) .006 (.15)
.047 (1.20)
.0075 (.19)
.0118 (.30)
0° – 8°
.010 (.25)
.019 (.50) .029 (.75)
Gage Plane Seating Plane
DetailA (20X)
PACKAGING INFORMATION
Page 14
X25330
14
ORDERING INFORMATION
PART MARK CONVENTION
X25330
P -V
Device
V
CC
Limits
Blank = 5V ±10%
Temperature Range
Blank = Commercial = 0°C to +70°C I = Industrial = –40°C to +85°C
Package
LIMITED WARRANTY
Devices sold by Xicor, Inc. are covered by the warranty and patent indemnification provisions appearing in its Ter ms of Sale only. Xicor, Inc. makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. Xicor, Inc. makes no warranty of merchantability or fitness for any purpose. Xicor, Inc. reserves the right to discontinue production and change specifications and prices at any time and without notice.
Xicor, Inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in a Xicor, Inc. product. No other circuits, patents, licenses are implied.
U.S. PATENTS
Xicor products are covered by one or more of the following U.S. Patents: 4,263,664; 4,274,012; 4,300,212; 4,314,265; 4,326,134; 4,393,481; 4,404,475; 4,450,402; 4,486,769; 4,488,060; 4,520,461; 4,533,846; 4,599,706; 4,617,652; 4,668,932; 4,752,912; 4,829, 482; 4,874, 967; 4,883, 976. Foreign patents and additional patents pending.
LIFE RELA TED POLICY
In situations where semiconductor component failure may endanger life, system designers using this product should design the system with appropriate error detection and correction, redundancy and back-up features to prev ent such an occurence.
Xicor's products are not authorized for use in critical components in life support devices or systems.
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) suppor t or sustain life, and whose failure to perfor m, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or system, or to affect its saf ety or eff ectiv eness .
X25330 X
X
Blank = 8-Lead SOIC
Blank = 5V ±10%, 0°C to +70°C I = 5V ±10%, –40°C to +85°C AE = 2.5V to 5.5V, 0°C to 70°C AF = 2.5V to 5.5V, –40°C to +85°C
S8 = 8-Lead SOIC
T
V14 = 14-Lead TSSOP
V = 14-Lead TSSOP
2.5 = 2.5 to 5.5V
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