Datasheet wtx1012 Datasheet

N-Channel ENHANCEMENT MODE

WTX1012

POWER MOSFET

P b

Lead(Pb)-Free

FEATURES:

* Power Mosfet : 1.8V Rated * Gate-Source ESD Protected: 2000 V * High-Side Switching * Low On-Resistance: 0.7Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 10 ns

BENEFITS:

* Ease in Driving Switches

* Low-Voltage Operation * High-Speed Circuits * Low Battery Voltage Operation

APPLICATIONS:

* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switching Cell Phones, Pagers

1

Gate

1

2

SC-89

Drain

3

(Top View)

3

2

Source

ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V Gate-Source Voltage V

b

Continuous DrainCurrent (TJ= 150 C)

Continuous DrainCurrent(TJ= 150 C)

Pulsed Drain Current Continuous Source Current (diode conduction)

Maximum Power Dissipationbfor SC 75

Maximum Power Dissipationbfor SC-75

Maximum Power Dissipationbfor SC 89

Maximum Power Dissipationbfor SC-89

Operating Junction and Storage Temperature Range TJ, T Gate-Source ESDRating (HBM, Method 3015) ESD 2000 V

Notes d. Pulse width limited by maximum junction temperature. e. Surface Mounted on FR4 Board.

a

b

TA = 25 C TA = 85 C

TA = 25 C TA = 85 C TA = 25 C TA = 85 C

DS

GS

I

D

I

DM

I

S

P

D

stg

600 400 350

275 250 175 150

90 80 275 250 160 140

20

6

500

1000

−55 to 150

Device Marking

WTX1012 = A

V

mA

mW

C

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WTX1012

Electrical Characteristics(T

=25°C Unless otherwise noted)

A

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-StateResistance

Forward Transconductance Diode ForwardVoltage

Dynamic

Total Gate Charge Q Gate-Source Charge Q Gate-Drain Charge Q Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t

Notes

1. Pulse test; pulse width 300 s, duty cycle 2%.

2. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is notimplied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

2

1

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g gs gd

r

f

VDS = VGS, ID= 250 A

VDS = 0 V, VGS = 4.5 V VDS= 20 V, VGS = 0 V 0.3 100 nA

VDS= 20 V, VGS = 0 V, TJ = 85 C

VDS = 5 V, VGS = 4.5 V 700 mA VGS = 4.5 V, ID = 600 mA 0.41 0.70 VGS = 2.5 V, ID = 500 mA 0.53 0.85

VGS = 1.8 V, ID = 350 mA 0.70 1.25

VDS = 10 V, ID = 400 mA

IS= 150 mA, VGS = 0 V 0.8 1.2 V

VDS= 10 V, VGS = 4.5 V, ID = 250 mA

VDD = 10 V, RL = 47

ID 200 mA, V

= 4.5 V, RG = 10

GEN

0.45 0.9 V

0.5 1.0

5

1.0 S

750

75

225

5

5 25 11

pC

A

ns

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WTX1012

Characteristics Curve

1.0

0.8

0.6

0.4

− Drain Current (A)

D

I

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS− Drain-to-Source Voltage (V)

VGS = 5 thru 1.8 V

Fig.1

4.0

)

3.2

2.4

1200

TC = −55 C

1000

25 C

800

125 C

600

400

- Drain Current (mA)

D

I

1 V

scitsiretcarahCtuptuO

200

0

0.0 0.5 1.0 1.5 2.0 2.5 VGS− Gate-to-SourceVoltage (V)

scitsiretcarahCrefsnarT

100

80

60

Fig.2

C

iss

− On-Resistance (

1.6

DS(on)

r

0.8

0.0 0 200 400 600 800 1000

VGS = 1.8 V

ID− Drain Current (mA)

Fig.3 On-Resistance vs. Drain Current

5

VDS = 10 V

= 250 mA

I

D

4

3

to-Source Voltage (V) e-

2

Gat

−

GS

1

V

0

0.0 0.2 0.4 0.6 0.8 Qg− Total Gate Charge (nC)

Fig.5 Gate Charge

VGS = 2.5 V

VGS = 4.5 V

Capacitance (pF)

−

40

C

20

C

rss

0

0 4 8 12 16 20

oss

VDS− Drain-to-Source Voltage (V)

Fig.4 Capacitance

1.60

1.40

1.20

On-Resiistance

−

(Normalized)

1.00

DS(on)

r

0.80

0.60

−50 −25 0 25 50 75 100 125 TJ− Junction Temperature ( C)

VGS = 4.5 V

= 600 mA

I

D

Fig.6 On-Resistance vs. Junction Temperature

VGS = 1.8 V I

= 350 mA

D

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WTX1012

Characteristics Curve

1000

TJ = 125 C

100

TJ = 25 C

− Source Current (mA)I

10

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD− V)V(egatloVniarD-ot-ecruoS

TJ = −55 C

Fig.7 Fig.8

0.3

0.2 ID = 0.25 mA

0.1

−0.0

Variance (V)

GS(th)

−0.1

V

−0.2

)

− On-Resistance (r

DS(on)

A) (

−

I

5

4

ID = 350 mA

3

ID = 200 mA

2

1

0

0 1 2 3 4 5 6

− Gate-to-SourceVoltage (V)

GS

3.0

2.5

2.0

1.5

GSS

1.0 VGS = 4.5 V

0.5

egatloVecruoS-ot-etaG.svecnatsiseR-nOegatloVdrawroFedoiDniarD-ecruoS

−0.3

−50 −25 0 25 50 75 100 125

TJ− Temperature ( C)

Fig.9 Threshold Voltage Variance vs. Temperature

7

6

5

4

Breakdown Voltage (V)

e

3

o-Sourc

-t 2

− Gate 1

GSS

BV

0

−50 −25 0 25 50 75 100 125 T − Temperature ( C)

Fig.11 BV

GSS

0.0

−50 −25 0 25 50 75 100 125

vs. Temperature

TJ− Temperature ( C)

Fig.10 I

vs. Temperature

GSS

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WTX1012

Characteristic Curves

2

1

Duty Cycle = 0.5

Transient

Thermal Impedance

Normalized Effective

ve Transient

Thermal Impedance

0.1

0.01 10

2

1

0.1

0.2

0.1

0.05

0.02

−4

Duty Cycle = 0.5

0.2

0.1

0.05

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

Single Pulse

−3

10

−2

−1

1 10 60010

3. TJM− TA = PDMZ

4. Surface Mounted

Square Wave Pulse Duration (sec)

Fig.12 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)

t

1

t

2

t

1

t

2

= 833 C/W

thJA

(t)

thJA

100

Normalized Effecti

0.02

0.01

−4

10

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Single Pulse

−3

10

Fig.13 Normalized Thermal Transient Impedance, Junction-to-Foot

10

−2

−1

Square Wave Pulse Duration (sec)

5/6 31-Mar-09

11 010

WTX1012

SC-89 Outline Demensions

A

3

B

T O P VIE W

1

K

M

G

2

S

D

C

Unit:mm

SC-89

Dim

A B C D G

J

K

N

J

M

S 1.60

Min

1.50

0.75

0.60

0.23

0.10

0.30

---

--- ---

1.50

Nom

0.50BSC

Max

1.60

0.85

0.70

0.28

0.15 0.20

0.40 0.50

---

1.70

0.95

0.80

0.33

10

10N

1.70

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