Page 1
PNP/NPN Epitaxial Planar Transistors
Lead(Pb)-Free
P b
WTP772
WTP882
TO-251
1. EMITTER
2. COLLECTOR
3. BASE
1 2 3
ABSOLUTE MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
1
Bas e Current
Total Device Dis s ipation Tc=25 C
TA=25°C
Junction Temperature
Storage, Temperature
Device Marking
WT P 77 2 =B 7 7 2 , WT P 88 2 =D88 2
(Ta=25ºC)
Symbol
V
CEO
V
CB O
V
EBO
I
C(DC)
I
(P ulse)
C
I
(P ulse)
B
P
D
T
j
Tstg
PNP/WTP772
-30
-40
-5.0
-3.0
-7.0
-0.6
-55 to +150
NPN/WTP882
30
40
5. 0
3. 0
7. 0
0. 6
10
1.4
150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0)
Collector-Base B reakdown Voltage (IC= -100/ 100 µAdc, IE=0)
Emitter-Base B reakdown Voltage (IE= -100/ 100 µAdc, IC=0)
Collector Cutoff Current (VCE= -30/ 30 Vdc, I =0)
Collector Cutoff Current (VCB= -40/ 40 Vdc, IE=0)
Emitter Cutoff Current (VEB= -6.0/ 6. 0V c, I =0)
NOT E : 1. P W 3 5 0 us , duty cyc le 2 %
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V
(B R)CEO
V
(B R)CB O
V
(B R)EBO
I
B
d
C
CE0
I
CB O
I
EBO
-30/ 30
-40/ 40
-5.0/ 5.0
-
-
-
-
-
-
-1.0/ 1.0
-1.0/ 1.0
-1.0/ 1.0
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
Page 2
WTP772
WTP882
ELECTRICAL CHARACTERISTICS (T
Characteristics
ON CHARACTERISTICS
DC Current Gain
(IC= -1.0/1.0 Adc, V
DC Current Gain
(IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc)
Collector-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
Base-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
Current-Gain-Bandwidth Product
(IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz)
Classification of h
CE=-2.0/2.0Vdc
FE(1)
Rank
)
R
=25 C unless otherwise noted) (Countinued)
A
Symbol
h
O
FE
h
FE
V
CE(sat)
V
BE(sat)
(1)
(2)
f
T
60
32
-
-
-
Y
TYP
-
-
-
-
80/90
Max
400
-
-0.5/0.5
-2.0/2.0
-
UnitMin
-
-
Vdc
Vdc
MHz
GR
Range
60-120
100-200 160-320
200-400
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Page 3
WTP772
WTP882
F1. Total Power Dissipation VS.
Ambient Temperature
NOTE
1. Aluminum heat sink
10
of 1.0 mm thickness.
2. With no insulator film.
3. With silicon compound.
8
infinite heat sink
6
9 cm
25 cm
100 cm
2
2
2
PT-Total Power Dissipation-W
4
2
Without heat sink
150100500
Ta-Amient Temperature- C
°
Percentage of Rated Current-%dT-
F3. Thermal Resistance VS.
Pulse Width
VCE=10V
I =1.0A
30
10
3
C
Duty=0.001
°
F.2 Derating Curve for All Types
100
S
80
60
40
20
D
i
s
s
i
p
a
t
/b
l
i
m
i
o
n
l
i
m
i
t
e
d
0
0
50
100
Tc,Case Temperature(°C)
F4. Safe Operating Areas
<
PW
10 ms
-
S
s/b Limited
<
-
PW=100 us
0.1mS
1
m
S
10
Ic(max),Pulse
Ic(max),DC
3
1
0.3
Dissipation
(Single nonrepetitive pulse)
( )
Duty Cycle 50 %
1
0
m
Limited
i
t
e
d
150
1
0.3
4Rth-Thermal Resistance- C/W
0.1 0.3 1 3 10 30 100 300 1000
PW-Pulse Width-ms
WTP772
F5. Collector Current VS. Collector
-2.0
-1.6
-1.2
-0.8
-0.4
-Ic,Collector Current(A)
To Emitter Voltage
IB=-10mA
0
0
-4 -8 -12 -16 -20
v
-Collector-Emitter Voltage(V)
CE
IB=-9mA
IB=-8MA
IB=-7mA
Pulse Test
IB=-6mA
IB=-5mA
IB=-4mA
IB=-3mA
IB=-2mA
IB=-1mA
0.1
NOTE
1. Tc=25 C
2. Curves must be derated
0.03
-Ic,Collector Current(A)
0.01
linearly with increase of
temperature and Duty Cycle.
1 3 6 10 30 60 100
V -Collector to Emitter Voltage-V
CE
WTP882
F6. Collector Current VS. Collector
To Emitter Voltage
2.0
1.6
1.2
0.8
0.4
-Ic,Collector Current(A)
0
0
v
IB=10mA
IB=9mA
IB=8MA
IB=7mA
IB=6mA
4 8 12 16 20
-Collector-Emitter Voltage(V)
CE
CEO
V MAX
Pulse Test
IB=5mA
IB=4mA
IB=3mA
IB=2mA
IB=1mA
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Page 4
WTP772
WTP882
h ,
V -I
BE
FE
F7.
1000
600
300
h
100
60
30
-DC Current Gain
10
6
FE
h ,
3
1
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
WTP772
FE
WTP882
V
BE
WTP772
WTP882
Ic-Collector Current(A)
c
VCE=2.0V
Puse Test
F8.
V , V ,
CE(sat)
10
6
VBE(sat)
0.6
0.3
0.1
0.06
0.03
WTP772
0.01
0.006
0.003
CE(sat)
V -Collector Saturation Voltage(V)
0.001
BE(sat)
V -Base Saturation Voltage(V)
WTP882
0.003 0.01
0.03
CE
V
0.1
Ic-Collector Current(A)
BE(sat)
WTP882
(sat)
0.3
-I
c
WTP772
113310
C -V ,
F9. f - I
T
1000
300
100
Cooling
(with heat sink)
WTP882
WTP772
30
10
3
T
f -Gain Bandwidth Product(MHZ)
1
0.01 0.03 0.1 0.3 1
Ic-Collector Current(A)
c
V =5.0V
CE
Forecd air
F10.
F
F
Cib-Input Capacitance(P )
300
100
60
30
10
6
3
Cob-Output Capacitance(P )
1 3 6 10 30 60
V -Collector to Base Voltage(V)
CB
V -Emitter to Base Voltage(V)
EB
WTP882
WTP772
ob
Cib
CB
C -V
ib
WTP772
WTP882
CE
f=1.0MHz
I =0(Cob)
E
I =0(Cib)
C
Cob
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Page 5
WTP772
WTP882
TO-251 Outline Dimensions
E
A
4
B
1 2 3
N
D
M
K
C
L
unit:mm
TO-251
G
H
Dim
A
B
J
C
D
E
G
H
J
K
L
M
N
Min
6.40
6.80
0.50
-
2.20
0.45
1.00
5.40
0.45
0.90
6.50
-
Max
6.80
7.20
0.80
2.30
2.50
0.55
1.60
5.80
0.69
1.50
-
0.90
1. Emitter
2. Base
3. Collector
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