Page 1
WTMA44
NPN Epitaxial Planar Transistors
P b
Lead(Pb)-Free
*Low Collector-Emitter Saturation Voltage
*High Breakdown Voltage
ABSOLUTE MAXIMUM RATINGS (T
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
=25˚C)
A
SOT-89
1
1. BASE
2. COLLECTOR
3. EMITTER
2
3
Symbol Limits Unit
V
V
V
CBO
CEO
EBO
I
C
P
D
500
400
6
300
500
V
V
V
mA
mW
Junction Temperature
Storage Temperature Range
T
j
T
stg
Device Marking
WTMA44=A44
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted)
Parameter
Symbol
Min Typ
Collector-Base Breakdown Voltage
I
=100µA, IE=0
C
BV
CBO
500
Collector-Emitter Breakdown Voltage
IC=1mA, IB=0
BV
CEO
400
Emitter-Base Breakdown Voltage
=10µA, IC=0
I
E
BV
EBO
6
150
-55 to +150
- -
-
-
Max
-
-
˚C
˚C
Unit
V
V
V
=400V, IE=0
V
CB
=4V, IC=0
V
EB
WEITRON
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I
CBO
I
EBO
1/3
-
-
-
-
0.1
0.1
µA
µA
01-Jun-2012
Page 2
WTMA44
ELECTRICAL CHARACTERISTICS (T
=25˚C Unless otherwise noted)
A
Characteristic
DC Current Gain
V
=10V, IC=1mA
CE
=10V, IC=10mA
V
CE
VCE=10V, IC=50mA
VCE=10V, IC=100mA
Collector-Emitter Saturation Voltage
I
=1mA, IB=0.1mA
C
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base-Emitter Saturation Voltage
I
=10mA, IB=1mA
C
Collector Output Capacitance
=20V, IE=0, f=1MHz
V
CB
Emitter Input Capacitance
=0.5V, IC=0, f=1MHz
V
BE
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Symbol Min Typ Max Unit
h
FE1
h
FE2
h
FE3
h
FE4
V 0.4
CE1(sat)
V 0.5
CE2(sat)
V 0.75
CE3(sat)
V
BE(sat)
C
ob
C
ib
40
50
45
40
- -
-
200
-
- -
- - 0.75
- -
- -
130
-
-
V
V
7
pF
pF
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01-Jun-2012
Page 3
WTMA
SOT-89 Outline Dimensions
E
G
J
K
C
L
H
B
unit:mm
SOT-89
Dim
A
D
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
1.500TYP
3.100
WEITRON
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01-Jun-2012
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