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WTM649A
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01-Aug-05
Lead(Pb)-Free
P b
PNP Epitaxial Planar Transistors
ABSOLUTE MAXIMUM RATINGS (TA=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(Pulse)
P
D
SOT-89
1
1. BASE
2. COLLECTOR
3. EMITTER
2
3
Limits Unit
-180
-160
-5
V
V
V
-1.5
A
-3
1
W
Junction Temperature
Storage Temperature Range
T
j
T
stg
Device Marking
WTM649A=649A
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted)
Parameter
Symbol
Min
Collector-Base Breakdown Voltage
IC=-1mA, IE=0
BV
CBO
-180
Collector-Emitter Breakdown Voltage
IC=-10mA, IB=0
BV
CEO
-160
Emitter-Base Breakdown Voltage
IE=-1mA, IC=0
BV
EBO
-5
150
-55 to +150
Typ
- -
-
-
Max
-
-
˚C
˚C
Unit
V
V
V
Collector Cutoff Current
VCB=-160V, IE=0
WEITRON
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I
CBO
-
-
-10
µA
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WTM649A
2/4
01-Aug-05
ELECTRICAL CHARACTERISTICS (T
=25˚C Unless otherwise noted)
A
Characteristic
ON CHARACTERISTICS
(1)
DC Current Gain
VCE=-5V, IC=-150mA
VCE=-5V, IC=-500mA
Collector-Emitter Saturation Voltage
IC=-600mA, IB=-50mA
Base-Emitter Saturation Voltage
VCE=-5V, IC=-150mA
1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
Symbol Min Typ Max Unit
h
FE1
h
FE2
V
CE(sat)
V
BE(on)
60
30
-
-
- - -1 V
- - -1.5 V
200
-
-
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=-5V, IC=-150mA, f=100MHz
Output Capacitance
VCB=-10V, f=1MHz
CLASSIFICATION OF h
FE1
Rank B C
h
FE1
f
T
C
ob
- 140 -
- 27 - pF
60-120 100-200
MHz
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Page 3
WTM649A
3/4
01-Aug-05
ELECTRICAL CHARACTERISTIC CURVES
350
V
EF
h oitaR ro
300
250
t
sisnarT tnerru
200
150
100
C
CD
50
= -5V
CE
Ta=75˚C
25˚C
-25˚C
0
-1 -10 -100 -1000
Collector current I
(mA)
C
Fig.1 Current Gain & Collector Current
)V(
1.2
)tas(EB
V e
ga
tlov no
i
ta
r
u
ta
s r
et
tim
e
ot
e
sa
B
lC=101
B
1.0
0.8
0.6
0.4
0.2
0
1 3 10 30 100 300 1000
TC=-25˚C
75˚C
Collector current I
25˚C
(mA)
C
Fig.3 Satueation Voltage & Collector Current
-1.2
egatlov noitaru
ta
s retim
e o
t rotcelloC
lC=101
B
-1.0
)V(
-0.8
)tas(EC
-0.6
V
-0.4
-0.2
0
-1 -10 -100 -1000
Collector current I
Ta=-75˚C
C
-25˚C
25˚C
(mA)
Fig.2 Satueation Voltage & Collector Current
240
)
zHM(
T
f t
c
udo
r
p
htdiw
d
nab nia
G
VCE=5V
Ta=-25˚C
200
160
120
80
40
0
10 30 100 300 1000
Collector current I
(mA)
C
Fig.4 Gain Bandwidth Product
& Collector Current
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200
)Fp(
bo
C ecnaticapac tuptuo rotcelloC
f = 1 MHz
IE = 0
100
50
20
10
5
2
-1 -3 -10 -30 -100
Collector to base voltage VCB (V)
Fig.5 Capacitance & Collector to Base Voltage
WEITRON
-3
I
Cmax
-1.0
)A(
C
-0.3
I
tne
r
r
u
C ro
t
ce
l
lo
C
DC Operation (TC=25˚C)
-0.1
-0.03
-0.01
-1 -3 -10 -30 -100 -300
Collector to emitter voltage V
(-13.3V, -1.5A)
(-160V, -0.02A)
Fig.6 Safe Operating Area
(-40V, -0.5A)
(V)
CE
Page 4
WTM649A
4/4
01-Aug-05
SOT-89 Outline Dimensions
E
G
J
K
C
L
H
B
unit:mm
SOT-89
Dim
A
D
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
1.500TYP
3.100
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