Page 1
NPN EPITAXIAL PLANAR TRANSISTOR
Lead(Pb)-Free
P b
Features:
WTM5551
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
* Switching and amplification in high Voltage
Applications such as Telephony.
* Low Current(Max. 600mA)
* High Voltage(Max. 180V)
Mechanical Data:
* Case : Molded Plastic
ABSOLUTE MAXIMUM RATINGS(TA=25ºC Unless Otheerwise Noted)
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Symbol Value
V
CBO
V
CEO
180
SOT-89
Unit
V
V160
Collector to Base Voltage
Collector Current
Total Device Disspation T
Thermal Resistance
Junction Temperature
Storage Temperature
WEITRON
http://www.weitron.com.tw
=25°C
A
V
EBO
I
C
P
D
R
θJA
Tj
Tstg
6
0.6
0.5
104
+150
-65 to +150
V
A
W
˚C/W
˚C
˚C
1/4 18-Nov-05
Page 2
WTM5551
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Base Breakdown Voltage
IC=100µA, IE=0
Collector-Emitter Breakdown Voltage
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
Collector Cut-Off Current
VCB=120V, IE=0
Emitter-Cut-Off Current
VEB=4V, IC=0
ON CHARACTERISTICS
DC Current Gain
VCE=5V, IC=1mA
VCE=5V, IC=-10mA
VCE=5V, IC=50mA
BV
BV
BV
I
I
CBO
CEO
EBO
CBO
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Typ
180
160
-
-
-
-
6.0 -- V
- - nA
- - nA
80
80
30
-
-
-
50
50
-
250
-
V
V
-
Collector-Emitter Saturation Voltage
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Collector-Emitter Saturation Voltage
IC=10mA, IB=1mA
IC=50mA, IB=5mA
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=10V, IC=10mA, f=100MHz
Output Capacitance
VCB=10V, IE=0, f=1MHz
Noise Figure
VCE=5V, IC=0.2mA, f=10Hz to 15.7KHz, Rs=10Ω
DEVICE MARKING
V
CE(sat)
V
BE(sat)
C
NF
f
T
ob
-
-
-
-
100
-
-
-
-
0.15
0.2
1.0
1.0
- 300 MHz
- - 6.0 pF
- - 8.0 dB
V
V
Marking 1G6
WEITRON
http://www.weitron.com.tw
2/4 18-Nov-05
Page 3
WTM5551
Typical Characteristic
(mV)
C
COLLECTOR CURRENT I
Fig.1
12
10
8
6
4
2
0
0
5 10
15 20 25 30 35 40 45
70µA
TA=25°C
60µA
50µA
40µA
30µA
COLLECTOR-EMITTER VOLTAGE VCE(V)
Collector
current vs.
1.0
(V)
0.9
CE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
COLLECTOR-EMITTER VOLTAGE V
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
Collector-emitter voltage
IC=1.0mA 10mA 30mA 100mA
Fig.3 Collector-emitter voltage vs. Base current
20µA
10µA
EF
h
: NIAG
TNER
R
UC CD
Fig.2 DC current gain vs. collector current
BASE CURRENT : IB(mA)
150
140
120
100
80
60
VCE=5V
TA=25°C
10 1001
COLLECTOR CURRENT : IC(A)
WEITRON
http://www.weitron.com.tw
3/4 18-Nov-05
Page 4
WTM5551
SOT-89 Outline Dimensions
E
G
J
K
C
L
H
B
unit:mm
SOT-89
Dim
A
D
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
1.500TYP
3.100
WEITRON
http://www.weitron.com.tw
4/4 18-Nov-05
Loading...