Page 1
WTM2907A
1/4
Lead(Pb)-Free
P b
PNP Epitaxial Planar Transistors
Features:
* Low Collector Saturation Voltage
High Spwwd Switching
*
*
For Complementary Use With NPN Type WTM2222A
ABSOLUTE MAXIMUM RATINGS (TA=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
SOT-89
1
1. BASE
2. COLLECTOR
3. EMITTER
2
3
Limits Unit
-60
-60
-5
-0.6
V
V
V
A
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
P
D
T
j
T
stg
Device Marking
WTM2907A = 2907A , p2F
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted)
Parameter
Symbol
Min
Collector-Base Breakdown Voltage
IC=-10µA, IE=0
BV
CBO
-60
Collector-Emitter Breakdown Voltage
IC=-10mA, IB=0
BV
CEO
-60
Emitter-Base Breakdown Voltage
IE=-10µA, IC=0
BV
EBO
-5
1.2
+150
-55 to +150
Typ
- -
-
-
Max
-
-
W
˚C
˚C
Unit
V
V
V
Collector Cutoff Current
VCE=-50V, IE=0
Collector Cutoff Current
VCE=-30V, VBE=-0.5V
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I
CBO
I
CEX
-
-
-10
nA
- -50- nA
24-Mar-06
Page 2
WTM2907A
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ELECTRICAL CHARACTERISTICS (T
=25˚C Unless otherwise noted)
A
Characteristic
ON CHARACTERISTICS
(1)
DC Current Gain
VCE=-10V, IC=-0.1mA
VCE=-10V, IC=-1.0mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
Collector-Emitter Saturation Voltage
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
Base-Emitter Saturation Voltage
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
Symbol Min Typ Max Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
75
100
100
100
-
-
-
-
-
-
-
300
50 - -
- -0.2 -0.4 V
- -0.5 -1.6 V
- - -1.3 V
- - -2.6 mV
-
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=-20V, IC=-50mA, f=100MHz
Output Capacitance
VCE=-10V, f=1MHz
f
T
C
ob
200 - -
- - 8.0 pF
MHz
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Page 3
WTM2907A
3/4
ELECTRICAL CHARACTERISTIC CURVES
1000
EF
h oitaR ro
125˚C
t
sisnarT tnerru
100
C
CD
25˚C
0
0.1 1 10 100 1000
Collector current I
Ta=75˚C
V
(mA)
C
CE
= 10V
Fig.1 Current Gain & Collector Current
)mV(
10000
)tas(EB
V e
gatlov no
i
ta
r
u
ta
s
r
et
t
i
m
e
ot
e
sa
B
lC=10I
B
1000
100
25˚C
TC=125˚C
0.1 1 10 100 1000
Collector current I
75˚C
(mA)
C
Fig.3 Satueation Voltage & Collector Current
10000
lC=10I
egatlov noitaru
)mV(
1000
ta
)tas(EC
s retim
V
100
e o
t rotcelloC
10
0.1 1 10 100 1000
B
Ta = 75˚C
125˚C
Collector current I
(mA)
C
25˚C
Fig.2 Satueation Voltage & Collector Current
1000
)
zHM(
T
f t
c
udo
r
p
htdiw
d
nab nia
G
VCE=20V
100
10
1 10 100
Collector current I
(mA)
C
Fig.4 Gain Bandwidth Product
& Collector Current
100
)
F
p(
bo
C ecnaticapac tuptuo rotcelloC
10
1
0.1 1 10 100
Collector to base voltage VCB (V)
Fig.5 Capacitance & Collector to Base Voltage
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Cbo
)mA(
C
I
tne
r
r
u
C ro
t
ce
l
lo
C
10000
PT=1ms
PT=100ms
1000
PT=1s
100
10
1
1 10 100
Collector to emitter voltage V
Fig.6 Safe Operating Area
CE
(V)
24-Mar-06
Page 4
WTM2907A
4/4
24-Mar-06
SOT-89 Outline Dimensions
E
G
J
K
C
L
H
B
unit:mm
SOT-89
Dim
A
D
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
1.500
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
TYP
3.100
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