Page 1
WTM2222A
1/4
Lead(Pb)-Free
P b
NPN Epitaxial Planar Transistors
Features:
* Low Collector Saturation Voltage
* High Speed Switching
* For Complementary Use With PNP Type WTM2907A
ABSOLUTE MAXIMUM RATINGS (TA=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SOT-89
1
1. BASE
2. COLLECTOR
3. EMITTER
2
3
Symbol Limits Unit
V
V
V
CBO
CEO
EBO
I
C
75
40
6.0
0.6
V
V
V
A
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Device Marking
WTM2222A = 2222A , 1P
ELECTRICAL CHARACTERISTICS(T
Parameter
Collector-Base Breakdown Voltage
I
=10µA
C
Collector-Emitter Breakdown Voltage
IC=10mA
Emitter-Base Breakdown Voltage
=10µA
I
E
Collector Cuto Current
=60V
V
CB
Collector Cuto Current
V
=5.0V
EB
P
D
T
j
T
stg
=25˚Cunless otherwise noted)
A
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
0.5
+150
-55 to +150
Min Typ
75
40
6.0
-
- -
-
-
-
Max
-
-
10
- - 01 nA
W
˚C
˚C
Unit
V
V
V
nA
WEITRON
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27-Sep-2012
Page 2
WTM2222A
ELECTRICAL CHARACTERISTICS (T
Characteristic
ON CHARACTERISTICS
(1)
DC Current Gain
V
=10V, IC=100µA
CE
=10V, IC=1.0mA
V
CE
VCE=10V, IC=10mA
=10V, IC=150mA
V
CE
VCE=10V, IC=500mA
V
=1.0V, IC=150mA
CE
Collector-Emitter Saturation Voltage
=150mA, IB=15mA
I
C
I
=500mA, IB=50mA
C
Base-Emitter Saturation Voltage
=150mA, IB=15mA
I
C
I
=500mA, IB=50mA
C
=25˚C Unless otherwise noted)
A
Symbol Min Typ Max Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
35
50
75
100
-
-
-
-
-
-
-
300
40 - 50 - -
- - 300 mV
- - 1.0 V
- 1.2 V
0.6
- - 2.0 V
-
DYNAMIC CHARACTERISTICS
Transition Frequency
=10V, IC=20mA, f=100MHz
V
CE
Output Capacitance
=10V, IE=0, f=1MHz
V
CB
Delay Time
V
=30V, IC=150mA,
CC
V
Rise Time
V
=30V, IC=150mA,
CC
V
Storage Time
V
=30V, IC=150mA,
CC
I -I
B1= B2=15mA
Fall Time
V
=30V, IC=150mA,
CC
I -I
B1= B2=15mA
I
B1=15mA
I
B1=15mA
f
T
C
ob
t
d
t
r
t
s
t
f
300 - -
--
-
-
-
- -
-
-
-
10
25
225
60
8
MHz
pF
ns
ns
ns
ns
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2/4 27-Sep-2012
Page 3
WTM2222A
ELECTRICAL CHARACTERISTIC CURVES
V
CEsat
——
Ta=100 ℃
I
C
Ta=25℃
1mA
900uA
800uA
700uA
600uA
500uA
400uA
300uA
200uA
IB= 100uA
β=10
Static Characteristic
(A)
C
0.25
0.20
0.15
COMMON
EMITTER
=25℃
T
a
0.10
COLLECTOR CURRENT I
0.05
0.00
0246810121416
1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
(mV)
CEsat
100
VOLTAGE V
COLLECTOR-EMITTER SATURATION
10
1 10 100
COLLECTOR CURREMT IC (mA)
1000
FE
hFE ——
Ta=100℃
I
C
Ta=25℃
100
DC CURRENT GAIN h
COMMON EMITTER
= 10V
V
10
110100
1200
900
(mV)
BEsat
600
600
VOLTAGE V
BASE-EMITTER SATURATION
300
110100
COLLECTOR CURRENT IC (mA)
V
——
BEsat
Ta=25℃
Ta=100 ℃
COLLECTOR CURREMT IC (mA)
CE
600
I
C
β=10
600
600
100
(mA)
C
10
IC ——
=1
a
T
1
V
BE
℃
0
0
℃
5
2
=
a
T
COLLECTOR CURRENT I
COMMON EMITTER
= 10V
V
VCB/V
CE
EB
0.1
0 300 600 900 1200
100
10
BESE-EMMITER VOLTAGE VBE (mV)
Cob/Cib ——
C
ib
C
ob
CAPACITANCE C (pF)
f=1MHz
=0/IC=0
I
E
T
=25 ℃
a
500
(MHz)
T
100
fT ——
TRANSITION FREQUENCY f
10
1 10 100
600
500
400
300
(mW)
C
P
200
COLLECTOR POWER DISSIPATION
100
COLLECTOR CURRENT IC (mA)
PC —— T
I
C
COMMON EMITTER
=10V
V
CE
T
=25℃
a
a
1
0.1 1 10
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REVERSE VOLTAGE V (V)
20
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( )℃
3/4 27-Sep-2012
Page 4
WTM2222A
SOT-89 Outline Dimensions
E
G
J
K
C
L
H
B
unit:mm
SOT-89
MinDim
A
D
A
B
C
D
E
G
H
J
K
L
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.500 TYP
2.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
WEITRON
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4/4 27-Sep-2012
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