Page 1
NPN EPITAXIAL PLANAR TRANSISTOR
P b
Lead(Pb)-Free
WTM1766
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
1
2
3
MAXIMUM RATINGS (T
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
=25℃ unless otherwise noted)
A
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Value
40
32
5.0
2.0
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
=50μA, I
=1mA, I
=50μA, I
VCB=20V, I
E
B
C
E
1 0= μA
V 04 0=
V 23 0=
V 5 0=
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
FE(1)
Range
WEITRON
http://www.weitron.com.tw
VEB=4V, I
I
EBO
VCE=3V, IC=500mA 82 390
h
FE(1)
IC=2A, I
V
CE(sat)
VCE=5V, IC=50mA, f=100MHz 100 MHz
f
T
VCB=10V, IE=0, f=1MHz 30 pF
C
ob
C
B
R Q P knaR
82-180 120-270 180-390
RBD QBD PBD gnikraM
1/3 04-Dec-08
1 0= μA
V 8.0 A2.0=
Page 2
WTM1766
Typical Characteristics
WEITRON
http://www.weitron.com.tw
2/3 04-Dec-08
Page 3
WTM1766
SOT-89 Outline Dimensions
E
G
J
K
C
L
H
B
unit:mm
SOT-89
MinDim
A
D
A
B
C
D
E
G
H
J
K
L
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.500TYP
2.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
WEITRON
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3/3 04-Dec-08
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