Page 1
Surface Mount Dual N-Channel
Enhancement Mode MOSFET
P b
Lead(Pb)-Free
Features:
*Super high dense cell design for low RDS(ON)
R
<50mΩ @VGS = 10V
DS(ON)
R
<60mΩ @VGS = 4.5V
DS(ON)
*Simple Drive Requirement
*Dual N MOSFET Package
*SO-8 Package
S1
G1
S2 G2
WTK9971
1
2
3
4
D1
8
D1
7
D2
6 5
D2
DRAIN CURRENT
5 AMPERES
DRAIN SOURCE VOLTAGE
60 VOLTAGE
1
SO-8
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Symbol Value Unite
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TA =25˚C)
(1)
(TA =70˚C)
Pulsed Drain Current
Power Dissipation
Maximax Junction-to-Ambient
(2)
(1)
(TA =25˚C)
(1)
Operating Junction and Storage
Temperature Range
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
TJ,Tstg -55 to 150 C
60
+
20
-
5.0
3.2
30
2
62.5
V
V
A
A
W
C/W
Device Marking
WTK9971=9971SS
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Page 2
WTK9971
Source Leakage Current(Tj=25 )
Electrical Characteristics (T
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
DrainDrain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
2
R
=25 C Unless otherwise noted)
A
BV
BV
V
I
DSS
/ Tj
DSS
GS(th)
g
fs
GSS
60 - - V
- 0.06 - V/
1.0 - 3.0 V
- 7 - S
- - ±100 nA
- - 1 uA
I
DSS
- - 25 uA
- - 50
DS(ON)
- - 60
- 32.5 -
- 4.9 -
- 8.8 -
- 9.6 -
- 10 -
- 30 -
- 5.5 -
Q
Q
T
T
Q
g
gs
gd
d(on)
T
r
d(off)
T
f
mfl
nC
ns
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VDS=VGS, ID=250uA
V
=10V, ID=5A
DS
VGS= ±25V
VDS=60V, VGS=0
VDS=48V, VGS=0
VGS=10V, ID=5A
VGS=4.5V, ID=2.5A
ID=5A
VDS=48V
VGS=10V
VDS=30V
ID=5A
VGS=10V
RG=3.3fl
RD=6fl
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
- 1658 -
- 156 -
- 109 -
Source-Drain Diode
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Forward On Voltage
Reverse Recovery Time T
Reverse Recovery Charge Q
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1in2copper pad of FR4 board; 135 /W whenmounted on Min. copper pad.
2
V
SD
rr
rr
- - 1.2 V
- 29.2 - ns
- 48 - nC
VGS=0V
pF
VDS=25V
f=1.0MHz
IS=1.6A, VGS=0V
IS=5A, VGS=0V
dI/dt=100A/?s
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Page 3
WTK9971
WE ITR ON
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WTK9971
WE ITR ON
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Page 5
WTK9971
SO-8 Package Outline Dimensions
1
D
(4X)
7
C
A
A2
e
B
1A
Unit:mm
θ
L
E1
7(4X)
eB
SYMBOLS
A
A1
B
C
D
E1
eB
e
L
θ
MILLIMETERS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
1.27 BSC
0.60
0.80
0
8
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