Page 1
Surface Mount P-Channel
WTK9435
Enhancement Mode MOSFET
1
S S
P b
Lead(Pb)-Free
Features:
2
S
3
G
4
* Super high dense
* Cell design for low RDS(ON)
* R
* R
DS(ON)
DS(ON)
<55mΩ@VGS = -10V
<90mΩ@VGS = -4.5V
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching
Description:
The WTK9435 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
8
7
6 5
D
D D D
DRAIN CURRENT
-5.3 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
1
SOP-8
Maximum Ratings (T
=25˚C Unless Otherwise Specified)
A
Rating Symbol Value Unite
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TA =25°C)
(TA =70°C)
Pulsed Drain Current
Power Dissipation
(1)
(TA =25°C)
Maximax Junction-to-Ambient
Operating Junction Temperature Range
Storage Temperature Range
Device Marking
V
DS
V
GS
I
D
I
DM
P
D
R
θ
T
Tstg
J
JA
-30
±16
-5.3
-4.7
-20
2.5
50
+150
-55 to +150
V
V
A
A
W
°C/W
°C
°C
WTK9435=9435SC
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Page 2
WTK9435
Electrical Characteristics (T
Characteristic
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=-250 uA
Gate-Source ThresholdVoltage
VDS=VGS, ID=-250 uA
Gate-Source Leakage Current
VDS=0V, VGS= 16V
Zero Gate Voltage Drain Current
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
Drain-Source On-Resistance
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
Forward Transconductance
VDS=-10V , ID=-5.3A
+
-
Dynamic
Input Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Output Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=-15V, VGS=0V, f=1MHZ
=25°C Unless otherwise noted)
A
Symbol
V
(BR)DSS
V
GS (th)
I
GSS
I
DSS
R
DS (on)
Min Typ Max
-30
-1.0 -
-
-
-
-
g
fs
C
iss
C
oss
C
rss
-
-
-
-
10
745
440
120
Unit
-
-
-
-
-
-
-3.0
±100
-1
-5
55
90
-
-
-
-
V
V
nA
μA
m
S
P
Ω
F
Switching
urn-On Delay Time
T
= -15V, ID = -1A, V
V
DS
Rise Time
= -15V, ID = -1A, V
V
DS
urn-O Time
T
= -15V, ID = -1A, V
V
DS
Fall Time
= -15V, ID = -1A, V
V
DS
otal Gate Charge
T
=-15V, ID=-5.3A,V =-10V
V
DS
ate-Source Charge
G
=-15V, ID=-5.3A,V =-10V
V
DS
ate-Drain Charge
G
=-15V, ID=-5.3A,V =-10V
V
DS
D
rain-Source
=0V, IS=-2.6A
V
GS
Continuous Source Current(Body Diode)
VD=VG=0V, VS=-1.2V
Pulsed Source Current(Body Diode)
(2)
= -10V, RG = 6Ω, R
GS
= -10V, RG = 6Ω, R
GS
= -10V, RG = 6Ω, R
GS
= -10V, RG = 6Ω, R
GS
(2)
GS
GS
GS
Diode Forward Voltage
(1)
(2)
= 15Ω
D
= 15Ω
D
= 15Ω
D
= 15Ω
D
t
d(on)
t
d(o)
Qgs
Qgd
V
I
t
t
Qg
I
S
SM
r
f
SD
-
-
-
-
-
-
-
-
-
-
9
15
75
40
28
3
7
-0.75
-
-
-1.2
-2.6
-20
-
-
-
-
-
-
-
nS
nS
nS
nS
nc
nc
nc
V
A
A
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
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Page 3
WTK9435
Characteristics Curve
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WTK9435
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WTK9435
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Page 6
WTK9435
SOP-8 Package Outline Dimensions
1
D
(4X)
7
A
A2
e
B
1A
C
Unit:mm
θ
L
E1
7(4X)
eB
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SYMBOLS
A
A1
B
C
D
E1
eB
e
L
θ
MILLIMETERS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
1.27 BSC
0.60
0.80
0˚
6/6
8˚
03-May-07
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