Page 1
WTK9410
Surface Mount N-Channel
Enhancement Mode MOSFET
P b
Lead(Pb)-Free
Features:
* Simple Drive Requirement.
* Low On-Resistance.
* Fast Switching.
* Super high dense cell design for low R
R
R
R
DS(ON)
DS(ON)
DS(ON)
<5.5mΩ@VGS=10V
<6.2mΩ@VGS=4.5V
<8.0mΩ@VGS=2.5V
* Rugged and Reliable.
* SOP-8 Package.
Maximum Ratings (T
=25°C Unless Otherwise Specified)
A
DS(ON)
DRAIN CURRENT
1
S
2
S
S G
3
4
D
8
D D D
7
6 5
DRAIN SOURCE VOLTAGE
18 AMPERES
30 VOLTAGE
1
SOP-8
Rating Symbol Value Unite
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(1)
(TA =25°C)
(TA =70°C)
Pulsed Drain Current
(2)
Power Dissipation(TA =25°C)
Maximax Junction-to-Ambient
Junction Temperature Range
Storage Temperature Range
V
DS
V
GS
I
D
I
DM
PD
(1)
R
T
θJA
T
J
stg
30
±12
18
15
80
2.5
50
+150
-55 to +150
V
V
A
A
W
°C/W
°C
°C
Device Marking
WTK9410 = 9410SC
WEITRON
http://www.weitron.com.tw
1/6 12-Mar-07
Page 2
WTK9410
Electrical Characteristics (T
Characteristic
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=250µA
Gate-Source Threshold Voltage
VDS=VGS, ID=250µA
Gate-Source Leakage Current
VDS=0V, VGS=±12V
Drain-Source Leakage Current
@Tj=25C, VDS=30V,VGS=0V
@Tj=70C, VDS=24V,VGS=0V
Drain-Source On-Resistance
VGS=10V, ID=18A
VGS=4.5V, ID=12A
VGS=2.5V, ID=6A
(2)
3
=25°C Unless otherwise noted)
A
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
r
DS(on)
Min T yp Max
30
- - 1.2 V
- -
-
- -
Unit
- V
-
-
±100
1
25
5.5
6.2
8.0
nA
µA
mΩ
Forward Transconductance
VDS=10V, ID=12A
Dynamic
Input Capacitance
VDS=25V,VGS=0V, f=1.0MHZ
Output Capacitance
VDS=25V,VGS=0V, f=1.0MHZ
Reverse Transfer Capacitance
VDS=25V,VGS=0V, f=1.0MHZ
(3)
gfs
Ci
C
C
ss
oss
rss
-
-
-
-
47
5080
660
400
-
8100
-
-
S
pF
WEITRON
http://www.weitron.com.tw
2/6 12-Mar-07
Page 3
WTK9410
Electrical Characteristics (T
Characteristic
Switching
Turn-On Delay Time
VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω
Rise Time
VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω
Turn-Off Time
VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω
Fall Time
VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω
Total Gate Charge
VDS=24V, VGS=4.5V, ID=18A
Gate-Source Charge
VDS=24V, VGS=4.5V, ID=18A
Gate-Drain Charge
VDS=24V, VGS=4.5V, ID=18A
3
=25°C Unless otherwise noted)
A
Symbol
T
d(on)
T
r
T
d(off)
T
f
Qg
Qgs
Qgd
Min T yp Max
-
- -
-
-
-
-
-
16
12
96
30
59 95
10
23
-
-
-
-
-
Unit
nS
nC
Source-Drain Diode Characteristics
Forward On Voltage
VGS=0V,IS=18A
Reverse Recovery Time
VGS=0V,IS=18A, dl/dt=100A/μs
Reverse Recovery Charge
VGS=0V,IS=18A, dl/dt=100A/μs
Note: 1. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad.
2. Pulse width limited by Max. junction temperature.
3. Pulse width ≤ 300us, duty cycle ≤ 2%.
WEITRON
http://www.weitron.com.tw
3
V
SD
3
T
rr
Q
rr
- - 1.2 V
- 43 - nS
- 39 - nC
3/6 12-Mar-07
Page 4
WTK9410
WEITRON
WEITRON
http://www.weitron.com.tw
4/6 12-Mar-07
Page 5
WTK9410
WEITRON
WEITRON
http://www .weitron.com.tw
5/6 12-Mar-07
Page 6
WTK9410
WEITRON
SOP-8 Package Outline Dimensions
1
D
(4X)
7
C
A
A 2
e
B
1 A
U nit:mm
θ
L
E1
7(4X)
eB
WEITRON
http://www .weitron.com.tw
SYMBOLS
A
A1
B
C
D
E1
eB
e
L
θ
MILLIMETERS
MIN
1 . 3 5
0 . 1 0
0 . 3 5
0 . 1 8
4 . 6 9
3 . 5 6
5 . 7 0
MAX
1 . 7 5
0 . 2 0
0 . 4 5
0 . 2 3
4 . 9 8
4 . 0 6
6 . 3 0
1.27BSC
0 . 6 0
0°
0 . 8 0
8°
6/6 12-Mar-07
Loading...