Datasheet wtk4501 Datasheet

WTK4501

Lead(Pb)-Free

P b

N AND P-Channel Enhancement Mode POWER MOSFET

Features:

* Low Gate change * Low On-Resistance N-CH R P-CH R

DS(ON)

* SOP-8 Package

<42mΩ@VGS = 4.5V

<90mΩ@VGS = -4.5V

2 GATE

4 GATE

7,8 DRAIN

1 SOURCE

5,6 DRAIN

3 SOURCE

N-CHANNEL

DRAIN SOURCE VOLTAGE

30 VOLTAGE

DRAIN CURRENT

7 AMPERES

P-CHANNEL

DRAIN SOURCE VOLTAGE

-30 VOLTAGE

DRAIN CURRENT

-5.3 AMPERES

1

SOP-8

Maximum Ratings (T

=25˚C Unless Otherwise Speciﬁed)

A

Rating Symbol

Drain-Source Voltage

Gate-Source Voltage

3

Continuous Drain Current

TA=25˚C TA=75˚C

Pulsed Drain Current

Total Power Dissipation

Maximum Junction-ambient

1

TA=25˚C

3

Operating Junction Temperature Range

Storage Temperature Range

R

T

V

I

DM

P

T

DS

GS

I

D

θJA

J

stg

Value

N-Channl P-Channl

30

±20

7

5.8

20

-30

±16

-5.3

-4.7

-20

2.0

62.5 ˚C/W

+150

-55~+150

Unit

V

A

W

˚C

Device Marking

WTK4501=4501SS

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WTK4501

N-Channel Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

OFF Characteristics

Drain-Source Breakdown Voltage VGS=0,ID=250μA

Drain-Source Leakage Current Tj=25°C, VDS=30V, VGS=0V Tj=70°C, VDS=24V, VGS=0V

Gate-Source Leakage current VGS=±20V

ON Characteristics

Gate-Source Threshold Voltage VDS=VGS, ID=250μA

Drain-Source On-Resistance VGS=10V,ID=7A VGS=4.5V,ID=5A

Forward Transconductance VDS=10V,ID=7A

Dymamic Characteristics

Input Capacitance

VGS=0V, VDS=20V, f=1.0MHz

Output Capacitance

VGS=0V, VDS=20V, f=1.0MHz

Reverse Transfer Capacitance

VGS=0V, VDS=20V, f=1.0MHz

= 25°C Unless otherwise noted)

A

V

BV

I

DSS

I

GSS

GS(Th)

R

DS(on)

g

C

DSS

fs

iss

oss

rss

30 - -

-

- -

1.0

-

- 645 -

- 150 -

- 95 -

-

±100 nA

- 3.0

-

13

1

25

28

42

-

V

μA

V

mΩ

S

pF

Switching Characteristics

Turn-on Delay Time VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω

Rise Time VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω

Turn-off Delay Time VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω

Fall Time VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω

Total Gate Charge VDS=24V,VGS=4.5V,ID=7A Gate-Source Charge

VDS=24V,VGS=4.5V,ID=7A

Gate-Source Change VDS=24V,VGS=4.5V,ID=7A

2

t

d(on)

t

r

t

d(off)

t

f

2

Q

g

Q

gs

Q

gd

- 6 -

- 5.2 -

- 18.8 -

- 4.4 -

- 8.4 -

- 2.1 -

- 4.7 -

Source-Drain Diode Characteristics

Forward On Voltage IS=7A, VGS=0V Continuous Source Current(Body diode) VD=VG=0V, VS=1.2V

Note: 1. Pulse width limited by Max. junction temperature.

2. Pulse width ≤ 300us, duty cycle ≤ 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board, 135°C/W when mounted on Min. copper pad.

2

V

SD

I

S

- - 1.2 V

- - 1.67 A

ns

nC

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WTK4501

P-Channel Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

OFF Characteristics

Drain-Source Breakdown Voltage VGS=0,ID=-250μA

Drain-Source Leakage Current Tj=25°C, VDS=-30V, VGS=0V Tj=70°C, VDS=-24V, VGS=0V

Gate-Source Leakage current VGS=±16V

ON Characteristics

Gate-Source Threshold Voltage VDS=VGS, ID=-250μA

Drain-Source On-Resistance VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A

Forward Transconductance VDS=-10V,ID=-5.3A

Dymamic Characteristics

Input Capacitance

VGS=0V, VDS=-15V, f=1.0MHz

Output Capacitance

VGS=0V, VDS=-15V, f=1.0MHz

Reverse Transfer Capacitance

VGS=0V, VDS=-15V, f=1.0MHz

2

= 25°C Unless otherwise noted)

A

V

BV

I

DSS

I

GSS

GS(Th)

R

DS(on)

g

C

DSS

fs

iss

oss

rss

-30 - -

-

- -

-1.0

-

- 790 -

- 440 -

- 120 -

-

-25

±100 nA

- -3.0

-

8.5

-1

50 90

V

μA

V

mΩ

-

S

pF

Switching Characteristics

Turn-on Delay Time VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω

Rise Time VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω

Turn-o Delay Time VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω

Fall Time VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω

Total Gate Charge VDS=-15V, VGS=-10V, ID=-5.3A

Gate-Source Charge VDS=-15V, VGS=-10V, ID=-5.3A

Gate-Source Change VDS=-15V, VGS=-10V, ID=-5.3A

2

t

d(on)

t

r

t

d(o)

t

f

2

Q

g

Q

gs

Q

gd

- 12 -

- 20 -

- 45 -

- 27 -

- 20 -

- 3.5 -

- 2 -

Source-Drain Diode Characteristics

Forward On Voltage IS=-2.6A, VGS=0V Continuous Source Current(Body Diode) VD=VG=0V, VS=-1.2V

Note: 1. Pulse width limited by Max. junction temperature.

2. Pulse width ≤ 300us, duty cycle ≤ 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board, 135°C/W when mounted on Min. copper pad.

2

V

SD

I

S

- - -1.2 V

- - -1.67 A

ns

nC

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WTK4501

Characteristics Curve N-Channel

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WTK4501

N-Channel

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N-Channel

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Characteristics Curve P-Channel

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WTK4501

P-Channel

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P-Channel

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WTK4501

SOP-8 Package Outline Dimensions

1

D

(4X)

7

A

A2

e

B

1A

C

Unit:mm

θ

L

E1

7(4X)

eB

SYMBOLS

A

A1

B C D

E1

eB

e L

θ

MILLIMETERS

MIN

1.35

0.10

0.35

0.18

4.69

3.56

5.70

MAX

1.75

0.20

0.45

0.23

4.98

4.06

6.30

1.27 BSC

0.60

0.80

0˚

8˚

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10/10 07-May-07