Page 1
Surface Mount P-Channel
WTK4435
Enhancement Mode MOSFET
1
S S
P b
Lead(Pb)-Free
2
S
3
G
4
Features:
* Super high dense
* Cell design for low RDS(ON)
* R
* R
DS(ON)
DS(ON)
<20mΩ@VGS = -10V
<35mΩ@VGS = -4.5V
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching
Description:
The WTK4435 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-eectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC converters.
D
8
D D D
7
6 5
DRAIN SOURCE VOLTAGE
DRAIN CURRENT
-8 AMPERES
-30 VOLTAGE
1
SOP-8
Maximum Ratings (T
=25˚C Unless Otherwise Specified)
A
Rating Symbol Value Unite
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TA =25°C)
(TA =70°C)
Pulsed Drain Current
Power Dissipation
(1)
(TA =25°C)
Maximax Junction-to-Ambient
Operating Junction Temperature Range
Storage Temperature Range
Device Marking
V
DS
V
GS
I
D
I
DM
P
D
R
θ
T
Tstg
J
JA
-30
±20
-8
-6
-50
2.5
50
+150
-55 to +150
V
V
A
A
W
°
C/W
°
°
C
C
WTK4435=4435SC
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Page 2
WTK4435
Electrical Characteristics (T
Characteristic
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=-250 uA
Gate-Source ThresholdVoltage
VDS=VGS, ID=-250 uA
Gate-Source Leakage Current
VDS=0V, VGS= 20V
Zero Gate Voltage Drain Current
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
Drain-Source On-Resistance
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-5A
Forward Transconductance
VDS=-10V , ID=-8A
+
-
Dynamic
Input Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Output Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=-15V, VGS=0V, f=1MHZ
=25°C Unless otherwise noted)
A
Symbol
V
(BR)DSS
V
GS (th)
I
GSS
I
DSS
R
DS (on)
Min Typ Max
-30
-1.0 -
-
-
-
-
g
fs
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
- 35
20
2800
1400
350
-
-3.0
±100
-1
-5
20
-
-
-
-
Unit
V
V
nA
μA
m
Ω
S
F
P
Switching
urn-On Delay Time
T
= -15V, ID= -1A, VGS= -10V, RG= 6Ω, R
V
DS
Rise Time
= -15V, ID= -1A, VGS= -10V, RG= 6Ω, R
V
DS
urn-O Time
T
= -15V, ID= -1A, VGS= -10V, RG= 6Ω, R
V
DS
Fall Time
= -15V, ID= -1A, VGS= -10V, RG= 6Ω, R
V
DS
otal Gate Charge
T
=-15V, ID=-4.6A,V =-10V
V
DS
ate-Source Charge
G
=-15V, ID=-4.6A,V =-10V
V
DS
ate-Drain Charge
G
=-15V, ID=-4.6A,V =-10V
V
DS
D
rain-Source
=0V, IS=-2.1A
V
GS
Continuous Source Current(Body Diode)
VD=VG=0V, VS=-1.2V
Pulsed Source Current(Body Diode)
(2)
(2)
GS
GS
GS
Diode Forward Voltage
(1)
(2)
= 15Ω
D
= 15Ω
D
= 15Ω
D
= 15Ω
D
t
t
d(on)
t
r
t
f
Qg
Qgs
Qgd
V
SD
I
S
I
SM
-
-
)
-
-
-
-
-
-
-
-
30
20
120
80
47
9.5
8
-0.75
-
-
-1.2
-2.1
-50
-
-
-
-
-
-
-
nS
nS
nS
nS
nc
nc
nc
V
A
A
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
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Page 6
WTK4435
SOP-8 Package Outline Dimensions
1
D
(4X)
7
A
A2
e
B
1A
C
Unit:mm
θ
L
E1
7(4X)
eB
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SYMBOLS
A
A1
B
C
D
E1
eB
e
L
θ
MILLIMETERS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
1.27 BSC
0.60
0.80
0˚
6/6
8˚
03-May-07
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