Datasheet wtk4424 Datasheet

Page 1
WTK4424
Surface Mount N-Channel Enhancement Mode MOSFET
P b
Lead(Pb)-Free
Description:
The WTK4424 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features:
1
S S S G
2
3
4
DRAIN CURRENT
D
8
D D D
7
6 5
DRAIN SOURCE VOLTAGE
13.8 AMPERES
30 VOLTAGE
1
SOP-8
Absolute Maximum Ratings
Parameter Symbol Ratings Unit Drain-Source Voltage V Gate-Source Voltage V Continuous Drain Current Continuous Drain Current Pulsed Drain Current Total Power Dissipation PD@TA=25 2.5 W Linear Derating Factor 0.02 W/
Operating Junction and StorageTemperature Range
3
3
1
DS
GS
ID@TA=25 13.8 A ID@TA=70 11 A
I
DM
Tj, Tstg -55 ~ +150
30 V
±20 V
50 A
Device Marking
WTK4424 = 4424SC
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Page 2
WTK4424
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Drain-Source Breakdown Voltage
Breakdown VoltageTemperature Coefficient
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time
2
Rise Time Turn-off Delay Time Fall Time
BV
DSS
BV
/ Tj
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
30 - - V
- 0.02 -
V/
1.0 - 3.0 V
- 21 - S
- -
100
nA
- - 1 uA
- - 25 uA
- - 9 m
- - 14
- 23 35
- 6 -
nC
- 15 -
- 13 -
- 9 -
ns
- 35 -
- 17 -
VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA V
=10V, ID=13A
DS
VGS= 20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=13A VGS=4.5V, ID=10A
ID=13A VDS=24V VGS=4.5V
VDS=25V ID=1A VGS=10V RG=3.3 RD=15
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
C
iss
C
oss
C
rss
R
g
- 1920 3070
- 410 -
- 300 -
- 0.9 - f=1.0MHz
Source-Drain Diode
Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Q
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
2
2
V
SD
T
rr
rr
- - 1.2 V
- 33 - ns
- 26 - nC
VGS=0V
pF
VDS=25V f=1.0MHz
IS=2.1A, VGS=0V IS=13A, VGS=0V
dI/dt=100A/fls
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Page 3
WTK4424
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WTK4424
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Page 5
WTK4424
SO-8 Package Outline Dimensions
1
D
(4X)
7
C
A
A2
e
B
1A
Unit:mm
θ
L
E1
7(4X)
eB
SYMBOLS
A
A1
B C D
E1
eB
e L
θ
MILLIMETERS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
1.27 BSC
0.60
0.80
0
8
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