
WTK4424
Surface Mount N-Channel
Enhancement Mode MOSFET
P b
Lead(Pb)-Free
Description:
The WTK4424 provide the designer with the best combination of
fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Features:
*Low On-Resistance
*High Vgs Max Rating Voltage
*Surface Mount Package
1
S S S G
2
3
4
DRAIN CURRENT
D
8
D D D
7
6 5
DRAIN SOURCE VOLTAGE
13.8 AMPERES
30 VOLTAGE
1
SOP-8
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation PD@TA=25 2.5 W
Linear Derating Factor 0.02 W/
Operating Junction and StorageTemperature Range
3
3
1
DS
GS
ID@TA=25 13.8 A
ID@TA=70 11 A
I
DM
Tj, Tstg -55 ~ +150
30 V
±20 V
50 A
Device Marking
WTK4424 = 4424SC
WEITRON
http://www.weitron.com.tw
1/5 01-Dec-08

WTK4424
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Drain-Source Breakdown Voltage
Breakdown VoltageTemperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
BV
DSS
BV
/ Tj
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
30 - - V
- 0.02 -
V/
1.0 - 3.0 V
- 21 - S
- -
100
nA
- - 1 uA
- - 25 uA
- - 9
m
- - 14
- 23 35
- 6 -
nC
- 15 -
- 13 -
- 9 -
ns
- 35 -
- 17 -
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VDS=VGS, ID=250uA
V
=10V, ID=13A
DS
VGS= 20V
VDS=30V, VGS=0
VDS=24V, VGS=0
VGS=10V, ID=13A
VGS=4.5V, ID=10A
ID=13A
VDS=24V
VGS=4.5V
VDS=25V
ID=1A
VGS=10V
RG=3.3
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
g
- 1920 3070
- 410 -
- 300 -
- 0.9 - f=1.0MHz
Source-Drain Diode
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge Q
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
2
2
V
SD
T
rr
rr
- - 1.2 V
- 33 - ns
- 26 - nC
VGS=0V
pF
VDS=25V
f=1.0MHz
IS=2.1A, VGS=0V
IS=13A, VGS=0V
dI/dt=100A/fls
WEITRON
http://www.weitron.com.tw
2/5 01-Dec-08

WTK4424
WEITRON
WEITRON
http://www.weitron.com.tw
3/5 01-Dec-08

WTK4424
WEITRON
http://www.weitron.com.tw
4/5 01-Dec-08

WTK4424
SO-8 Package Outline Dimensions
1
D
(4X)
7
C
A
A2
e
B
1A
Unit:mm
θ
L
E1
7(4X)
eB
SYMBOLS
A
A1
B
C
D
E1
eB
e
L
θ
MILLIMETERS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
1.27 BSC
0.60
0.80
0
8
WEITRON
http://www.weitron.com.tw
5/5 01-Dec-08