Page 1
Surface Mount Dual N-Channel
Enhancement Mode MOSFET
P b
Lead(Pb)-Free
Features:
*Super high dense cell design for low RDS(ON)
R
<26mΩ @VGS = 10V
DS(ON)
R
<40mΩ @VGS = 4.5V
DS(ON)
*Simple Drive Requirement
*Dual N MOSFET Package
*SO-8 Package
S1
G1
S2 G2
WTK4228
1
2
3
4
D1
8
D1
7
D2
6 5
D2
DRAIN CURRENT
6.8 AMPERES
DRAIN SOURCE VOLTAGE
30 VOLTAGE
1
SO-8
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Symbol Value Unite
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TA =25˚C)
(1)
(TA =70˚C)
Pulsed Drain Current
Power Dissipation
Maximax Junction-to-Ambient
(2)
(1)
(TA =25˚C)
(1)
Operating Junction and Storage
Temperature Range
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
TJ,Tstg -55 to 150 C
30
+
20
-
6.8
5.5
40
2
62.5
V
V
A
A
W
C/W
Device Marking
WTK4228=4228SS
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04-Dec-08
Page 2
WTK4228
Electrical Characteristics(Tj = 25°C Unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source LeakageCurrent(Tj=25 )
Drain-Source LeakageCurrent(Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
30 - - V
1.0 - 3.0 V
- 15 - S
- -
100
nA
- - 1 uA
- - 25 uA
- - 26
mΩ
- - 40
- 9 15
- 2 -
nC
- 6 -
- 10 -
- 9 ns
- 18 -
- 6 -
VGS=0, ID=250uA
VDS=VGS, ID=250uA
V
=10V, ID=6A
DS
VGS= 20V
VDS=30V, VGS=0
VDS=24V, VGS=0
VGS=10V, ID=6A
VGS=4.5V, ID=4A
ID=6.8A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
VGS=10V
RG=3.3
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
- 580 930
- 150 -
- 108 -
Source-Drain Diode
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Forward On Voltage
Reverse Recovery Time T
Reverse Recovery Charge Q
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2copper pad of FR4 board; 135 /W when mounted on Min. copper pad.
2
V
SD
rr
rr
- - 1.3 V
- 15 - ns
- 9 - nC
VGS=0V
pF
VDS=25V
f=1.0MHz
IS=1.7A, VGS=0V, Tj=25
IS=6.8A, VGS=0V
dI/dt=100A/fls
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Page 3
WTK4228
WE ITR ON
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3/5 04-Dec-08
Page 4
WTK4228
WE ITR ON
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4/5 04-Dec-08
Page 5
WTK4228
SO-8 Package Outline Dimensions
1
D
(4X)
7
C
A
A2
e
B
1A
Unit:mm
θ
L
E1
7(4X)
eB
SYMBOLS
A
A1
B
C
D
E1
eB
e
L
θ
MILLIMETERS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
1.27 BSC
0.60
0.80
0
8
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