Datasheet wtg3043 Datasheet

Surface Mount N-Channel Power MOSFET

1/6 05-May-2011

Lead(Pb)-Free

P b

3

2

3. Drain

2. Source

1. Gate

1

SOT-723

Features:

* Enables High Density PCB Manufacturing

* 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89

* Low Voltage Drive Makes this Device Ideal for Portable Equipment

* Low Threshold Levels, V

* Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin

Environments such as Portable Electronics

* Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels Using the Same Basic Topology

* These are Pb−Free Devices

GS(TH) < 1.3 V

WTG3043

3

Applications:

* Interfacing, Switching * High Speed Switching

* Cellular Phones, PDAs

Maximum Ratings(T

Rating Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

=25 C Unless Otherwise Specified)

A

Steady State

t ≤ 5s

Steady State

t ≤ 5s

Steady State

=25˚C

T

A

=85˚C

T

A

=25˚C

T

A

=25˚C

T

A

=25˚C

T

A

=25˚C

T

A

=85˚C

T

A

T

A

=25˚C

1 2

V

DSS

20

V

GSS

±10

255

I

D

185 285

mA

440

P

D

545

mW

210

I

D

P

D

155

310

mA

mW

Pulsed Drain Current

Source Current (Body Diode) (Note 2)

Lead temperature for soldering purposes, 1/8" from case for 10 seconds

Operating Junction and Storage Temperature Range

* Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size.

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=10µS

t

p

I

DM

I

S

T

L

TJ,Tstg

400

286

260

-55~+150

mA

˚C

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Electrical Characteristics(T

A

= 25℃ Unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

@V

GS

=0,ID=100μA

V

(BR)DSS

20 - -

Gate Threshold Temperature Coefficient

@V

DS=VGS,ID

=250μA

Gate Threshold Voltage

@V

DS=VGS,ID

=250μA

V

GS(Th)

-

1.3

-2.4

V

GS(Th)

V

Gate-Source Leakage current

ReVerse@V

DS

=0V

GS

=-5V,V

Forward@V

DS

=0V

GS

=5V,V

I

GSS

I

DSS

- -

1

μA

- -

Zero Gate Voltage Drain Current

(Tj=25˚C)

@V

DS

=16V,VGS=0

@V

DS

=16V,VGS=0

(Tj=125˚C)

- -

μA

Drain-Source On-State Resistance

@V

GS

=1.65V,ID=1mA

@V

GS

=1.8V,ID=1mA

@V

GS

=2.5V,ID=1mA

@V

GS

=4.5V,ID=255mA

@V

GS

=4.5V,ID=10mA

R

DS(on)

S

-

156.8

-

105.1

-

4.52.4

-

3.81.6

-

0.275

27

2.7 -

-

8.3 -

11 -

-

10

1

3.41.5

mV/˚C

Ω

Drain-Source Breakdown Voltage Temperature Coefficient

Forward Transconductance

I

D

=100 µA, Referenced to 25°C

@V

DS

=5V,ID=100mA

gfs

Dynamic

Input Capacitance

@V

GS

=0V,VDS=10V,f=1.0MHz

@V

GS

=0V,VDS=10V,f=1.0MHz

@V

GS

=0V,VDS=10V,f=1.0MHz

C

iss

-

Output Capacitance

C

oss

-

Reverse Transfer Capacitance

C

rss

pF

2/6

05-May-2011

WTG3043

V

(BR)DSS

/T

J

Switching

Turn-on Delay Time

V

GS

=4.5V, VDD=5V,ID=10mA,RG=6 Ω(Note 4)

V

GS

=4.5V, VDD=5V,ID=10mA,RG=6 Ω(Note 4)

V

GS

=4.5V, VDD=5V,ID=10mA,RG=6 Ω(Note 4)

V

GS

=4.5V, VDD=5V,ID=10mA,RG=6 Ω(Note 4)

t

d(on)

t

d(off)

Turn-on Rise Time

t

r

t

f

13

-

15-

Turn-off Delay Time

- 55

94

-

Turn-off Fall Time

ns

0.4

-

/T

J

Thermal Data

Source-Drain Diode Characteristics

Discharge Time

Charge Time

Forward Diode Voltage

@V

GS

=0V,IS=286mA

@V

GS

=0V,IS=286mA

t

b

t

a

=125˚C

=25˚C

T

J

T

J

-

1.2

0.69

0.83

-

V

SD

V

4. Surface−mounted on FR4 board using the minimum recommended pad size.

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

Reverse Recovery Time

T

rr

-

7.1 -

-

2.0 -

-

3.7

9.1 -

ns

Reverse Recovery Charge

Q

rr

-

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WTG3043

@V

DD

=20V ,VGS=0V,IS=286mA,dlSD /dt=100A/µs

@V

DD

=20V ,VGS=0V,IS=286mA,dlSD /dt=100A/µs

@V

DD

=20V ,VGS=0V,IS=286mA,dlSD /dt=100A/µs

@V

DD

=20V ,VGS=0V,IS=286mA,dlSD /dt=100A/µs

Electrical Characteristics(T

A

= 25℃ Unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

nC

Junction-to-Ambient

R

θJA

R

θJA

°C/W

228

280

Characteristic

Symbol

Value

Unit

t = 5s (Note 3)

Steady State (Note 3)

-

Junction-to-Ambient

R

θJA

400

Steady State Minimum Pad(Note 4)

Device Marking

WTG3043 = KA

WTG3043

Typical Characteristics

0.3

VGS = 3 V to 10 V

0.2

0.1

DRAIN CURRENT (AMPS)

D,

I

0

1

V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS

Figure 1. On−Region Characteristics

5

4

3

2

0.3

2.5 V

TJ = 25°C

2.2 V

2.0 V

1.8 V

1.6 V

1.4 V

2

35

4

VDS ≥ 5 V

0.2

0.1

DRAIN CURRENT (AMPS)

D,

I

0

12

TJ = 25°C

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 125°C

1.5

TJ = −55°C

2.5

Figure 2. Transfer Characteristics

ID = 0.255 A

= 25°C

T

J

6

TJ = 25°C

5

4

VGS = 2.5 V

3

1

DRAIN−TO−SOURCE RESISTANCE (W)

01

16

DS(on),

R

27593

, GATE−TO−SOURCE VOLTAGE (VOLTS)

V

GS

4

8 0.2

10

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

9.0

8.0

7.0

6.0

5.0

4.0

DRAIN−TO−SOURCE

RESISTANCE

3.0

2.0

DS(on),

R

1.0 0

−50 0−25 25

VGS = 1.8 V, ID = 10 mA

VGS = 2.5 V, ID = 10 mA

TJ, JUNCTION TEMPERATURE (°C)

VGS = 1.65 V, ID = 1 mA

VGS = 4.5 V, ID = 10 mA

75

50 150

125100

Figure 5. On−Resistance Variation with

Temperature

2

DRAIN−TO−SOURCE RESISTANCE (W)

00.30.1

DS(on),

R

ID, DRAIN CURRENT (AMPS)

VGS = 4.5 V

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1000

, LEAKAGE (nA)

DSS

I

100

10

VGS = 0 V

TJ = 150°C

TJ = 125°C

1

5

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

10

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

15

20

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WTG3043

5/6

Typical Characteristics

25

C

iss

20

C

rss

15

10

C, CAPACITANCE (pF)

5

0

10 5 0 5 10 15 20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 0 VVDS = 0 V

GS

V

DS

V

TJ = 25°C

Figure 7. Capacitance Variation

0.4 VGS = 0 V

0.3

1000

VDD = 5 V I

= 10 mA

D

= 4.5 V

V

GS

100

C

iss

C

oss

C

rss

t, TIME (ns)

t

d(off)

t

f

t

r

t

d(on)

10

1

1 10 100

R

, GATE RESISTANCE (OHMS)

G

Figure 8. Resistive Switching Time

Variation vs. Gate Resistance

TJ = 25°C

0.2

0.1

, SOURCE CURRENT (AMPS)

S

I

TJ = 150°C

TJ = 125°C

0

0.4 0.70.5 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Diode Forward Voltage vs. Current

TJ = −55°C

0.90.8

1.00.6

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05-May-2011

WTG3043

1

2

3

TOP VIEW

Dim

A

b

b1

C D E

e

H

E

Min

Nom Max

L

Unit:mm

SOT-723 Outline Demensions

D

b1

E

b

e

A

L

C

H

E

1.0

0.40

0.45

0.15

0.25

0.07

1.15

0.75

0.40 BSC

1.15

0.15

SOLDERING FOOTPRINT

SOT-723

0.20 0.25

0.50 0.55

0.20 0.27

0.3 0.35

0.12 0.17

1.20 1.25

0.80 0.85

1.20 1.25

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6/6 05-May-2011