Page 1
Surface Mount P-Channel Enhancement
Mode POWER MOSFET
P b
Lead(Pb)-Free
1 GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R
<50m Ω@VGS=-10V
DS(ON)
3
2
SOURCE
DRAIN
WTD9435
DRAIN CURRENT
-20 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
4
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*TO-252 Package
Maximum Ratings(T
=25 C Unless Otherwise Specified)
a
Rating Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, (V
@10V, TC=25˚C)
GS
, (VGS@10V, TC=100˚C)
Pulsed Drain Current
1
1
2
1. GATE
2.4 DRAIN
3. SOURCE
D-PAK / (TO-252)
I
V
V
I
DM
DS
GS
D
-30
±20
-20
-13
-72
3
V
A
Total Power Dissipation(T
=25˚C)
C
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Operating Junction and Storage Temperature Range
WEITRON
http:www.weitron.com.tw
1/6 12-Jul-07
P
D
R
θJC
R
θJA
TJ,Tstg
31
4.0
110
-55~+150
W
˚C/W
˚C/W
˚C
Page 2
WTD9435
Electrical Characteristics(T
Characteristic Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
ID=-250µA,VGS=0
Gate-Source Threshold Voltage
ID=-250µA,VDS=V
Gate-Source Leakage current
VGS=±20V
Drain-SourceLeakage Current(Tj=25˚C)
VDS=-30V,VGS=0
Drain-Source
VDS=-24V,VGS=0
Static Drain-Source On-Resistance
ID=-10A,VGS=-10V
ID=-5A,VGS=-4.5V
GS
Leakage Current(Tj=70˚C)
2
= 25℃ Unless otherwise specified)
j
BV
V
GS(Th)
I
I
R
DSS
GSS
DSS
DS(on)
-30 - -
-1.0 - 3.0
- -
- - -1
- - -25
-
-
V
±100
-
-
50
90
nA
μA
mΩ
Forward Transconductance
ID=-10A,VDS=-10V
Dynamic
Input Capacitance
VGS=0V,VDS=-25V,f=1.0MHz
Output Capacitance
VGS=0V,VDS=-25V,f=1.0MHz
Reverse Transfer Capacitance
VGS=0V,VDS=-25V,f=1.0MHz
gfs - 9.6 - S
C
iss
C
oss
C
rss
-
-
- 140 -
463
187
740
- pF
WEITRON
http:www.weitron.com.tw
2/6 12-Jul-07
Page 3
WTD9435
Switching
Turn-on Delay Time
2
ID=-10A,VDS=-15V,VGS=-10V,RG=3.3Ω,RD=1.5Ω
Rise Time
ID=-10A,VDS=-15V,VGS=-10V,RG=3.3Ω,RD=1.5Ω
Turn-off Delay Time
ID=-10A,VDS=-15V,VGS=-10V,RG=3.3Ω,RD=1.5Ω
Fall Time
ID=-10A,VDS=-15V,VGS=-10V,RG=3.3Ω,RD=1.5Ω
Total Gate CHarge
2
ID=-10A,VDS=-24V,VGS=-4.5V
Gate-Source Charge
ID=-10A,VDS=-24V,VGS=-4.5V
Gate-Drain (”Miller”) Change
ID=-10A,VDS=-24V,VGS=-4.5V
T
T
Q
d(on)
T
d(off)
T
Q
Q
gs
gd
- 9.6 -
r
- 18 -
ns
- 19 -
f
g
- 14 -
- 10 -
- 3 - nC
- 5 -
Source-Drain Diode Characteristics
Forward On Voltage
IS=-10A,VGS=0V
Reverse Recovery Time
IS=-10A,VGS=0V dl/dt=100A/µs
Reverse Recovery Charge
IS=-10A,VGS=0V dl/dt=100A/µs
Note: 1. Pulse width limited by safe operating area.
2. Pulse width ≤ 300μs, duty cycle ≤ 2%.
2
V
Trr
Qrr
SD
- - -1.2 V
- 34 - ns
- 30 - nc
WEITRON
http:www.weitron.com.tw
3/6 12-Jul-07
Page 4
WTD9435
Characteristics Curve
80
T
=25˚C
c
60
-10V
-8.0V
70
60
50
T
=150˚C
c
-10V
-8.0V
40
, Drain Current (A)
D
I
20
0
0
2 4 6 8 10
VDS . Drain-to-Source Voltage(V)
Fig.1 Typical Output Characteristics
31
29
27
(mΩ)
25
DS(ON)
23
R
21
19
T
-6.0V
VG=-4.0V
ID=10A
=25˚C
C
-4.5V
40
30
, Drain Current (A)
20
D
I
10
0
0
2 4 6 7
-VDS . Drain-to-Source Voltage(V)
Fig.2 Typical Output Characteristics
1.8
ID=18A
VG=10V
1.6
1.4
DS(ON)
1.2
1.0
Normalized R
0.8
-6.0V
-4.5V
VG=-4.0V
17
0
4 5 6 7 8 9 10 11 12
VGS , Gate-to-Source Voltage(V)
Fig.3 On-Resistance v.s. Gate Voltage
10
8
6
(A)
D
-I
4
2
0
0
0.2 0.4 0.6 1.41.210.8
-V
, Source-to-Drain Voltage (V)
SD
Fig.5 Forward Characteristica of
Reverse Diode
0.6
-50
0 50 100 150
Fig.4 Normalized OnResistance
3
2
(V)
GS(th)
V
1
0
-50
0 50 100 150
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
WEITRON
http://www.weitron.com.tw
4/6 12-Jul-07
Page 5
WTD9435
14
ID=-10A
12
VDS=-24V
10
8
6
4
, Gate Source Voltage (V)
GS
2
-V
0
0
12 1684 20
QG , Total Gate Charge (nC)
Fig 7. Gate Charge Charateristics
100
10
(A)
D
-I
1
Single Pulse
1ms
10ms
100ms
Is
DC
1000
100
f=1.0MHz
Ciss
Coss
Crss
C (pF)
10
1
-V
, Drain-to-Source Voltage(V)
DS
13 17 215 7 25 29
Fig 8. Effective Transient Thermal Impedance
1
0.1
C(pF)
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
Duty factor = t / T
Peak Tj=PDM x R
f=1.0MHz
t
T
+ T
thjc
C
0.1
0.1 1
-V
DS ,
Drain-to-Voltage (V)
10 100
Fig 9. Maximum Safe Operating Area
V
DS
90%
10%
V
GS
t
d(on) tr
t
d(off) tr
Fig 11. Switching Time Waveform
0.01
0.00001 0.0001
0.001 0.01 0.1 1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V
G
Q
G
-4.5V
Q
GS
Q
GD
Charge
Q
Fig.12 Gate Charge Waveform
WEITRON
http://www.weitron.com.tw
5/6 12-Jul-07
Page 6
WTD9435
6/6
12-Jul-07
D-PAK / (TO-252) Outline Dimension
E
A
4
1 2 3
D
B
M
C
G
H
J
K
L
Dim
A
B
C
D
E
G
H
J
K
L
M
D-PAK
Min
6.40
9.00
0.50
-
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Unit:mm
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
http://www.weitron.com.tw
WEITRON
Loading...