Page 1
Surface Mount P-Channel Enhancement
Mode POWER MOSFET
P b
Lead(Pb)-Free
1 GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R
<90m Ω@VGS=-10V
DS(ON)
3
2
SOURCE
DRAIN
WTD40N03
DRAIN CURRENT
-15 AMPERES
DRAIN SOURCE VOLTAGE
-60 VOLTAGE
4
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*TO-252 Package
Maximum Ratings(T
=25 C Unless Otherwise Specified)
a
Rating Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, (V
@10V, TC=25˚C)
GS
, (VGS@10V, TC=100˚C)
Pulsed Drain Current
1
1
2
1. GATE
2.4 DRAIN
3. SOURCE
D-PAK / (TO-252)
I
V
V
I
DM
DS
GS
D
30
±20
-20
-13
150
3
V
A
Total Power Dissipation(T
=25˚C)
C
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Operating Junction and Storage Temperature Range
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P
D
R
θJC
R
θJA
TJ,Tstg
50
2.5
110
-55~+150
W
˚C/W
˚C/W
˚C
Page 2
2/6
12-Jul-07
WTD40N03
Electrical Characteristics(T
Characteristic Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
ID=250µA,VGS=0
Gate-Source Threshold Voltage
ID=250µA,VDS=V
Gate-Source Leakage current
VGS=±20V
Drain-Source Leakage Current(Tj=25˚C)
VDS=30V,VGS=0
Drain-Source
VDS=24V,VGS=0
Static Drain-Source On-Resistance
ID=18A,VGS=10V
ID=14A,VGS=4.5V
GS
Leakage Current(Tj=150˚C)
= 25℃ Unless otherwise noted)
A
BV
V
GS(Th)
I
I
R
DSS
GSS
DSS
DS(on)
30 - -
1.0 - 3.0
- -
- - 25
- - 250
-
-
18
24
±100
21
30
V
nA
μA
mΩ
Forward Transconductance
ID=18A,VDS=10V
Dynamic
Input Capacitance
VGS=0V,VDS=25V,f=1.0MHz
Output Capacitance
VGS=0V,VDS=25V,f=1.0MHz
Reverse Transfer Capacitance
VGS=0V,VDS=25V,f=1.0MHz
gfs - 26 - S
C
iss
C
oss
C
rss
-
-
- 133 -
800
380
-
- pF
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Page 3
WTD40N03
Switching
Turn-on Delay Time
2
ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω
Rise Time
ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω
Turn-off Delay Time
ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω
Fall Time
ID=18A,VDS=15A,VGS=10V,RG=3.3Ω,RD=0.83Ω
Total Gate CHarge
2
ID=18A,VDS=24V,VGS=5V
Gate-Source Charge
ID=18A,VDS=24V,VGS=5V
Gate-Drain (”Miller”) Change
ID=18A,VDS=24V,VGS=5V
T
T
Q
Q
d(on)
T
r
d(off)
T
f
Q
g
gs
gd
- 7.2 -
- 60 -
ns
- 22.5 -
- 10 -
- 17 -
- 3 - nC
- 10 -
Source-Drain Diode Characteristics
Forward On Voltage
IS=36A, VGS=0V,Tj=25˚C
Continuous Source Current (Body Diode)
VD=VG=0V,VS=1.3V
Pulsed Source Durrent (Body Diode)
Note: 1. Pulse width limited by safe operating area.
2. Pulse width ≤ 300μs, duty cycle ≤ 2%.
2
1
V
SD
IS
ISM
- - 1.3 V
- - -36 A
- - 150 A
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Page 4
WTD40N03
Characteristics Curve
100
Tc=25˚C VG=10V
80
VG=7.0V
VG=6.0V
80
Tc=150˚C VG=10V
60
VG=7.0V
VG=6.0V
60
40
, Drain Current (A)
D
I
20
0
0
1 2 3 4 5 6 7
31
29
27
(mΩ)
25
DSON
23
R
21
19
FIG.1
Typical Output Characteristics
VDS . Drain-to-Source Voltage(V)
VG=5.0V
VG=4.0V
VG=3.0V
ID=18A
TC=25˚C
40
, Drain Current (A)
D
I
20
0
0
1 2 3 4 5 6 7
VDS . Drain-to-Source Voltage(V)
Fig.2 Typical Output Characteristics
1.80
ID=18A
VG=10V
1.60
1.40
DS(ON)
1.20
1.00
Normalized R
0.80
VG=5.0V
VG=4.0V
VG=3.0V
17
0
4 5 6 7 8 9 10 11 12
VGS (V)
0.60
-50
0 50 100 150
T
j
Fig.3 On-Resistance v.s. Gate Voltage Fig.4 Normalized OnResistance
40
35
30
25
20
15
,Dream Current(A)
D
I
10
5
0
25
50 75 100 150150
Fig.5 Maximum Drain Current
T
j
60
50
40
(W)
D
30
P
20
10
0
25
50 75 100 150150
T
j
Fig.6 Type Power Dieeipation
v.s. Case Temperature
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Page 5
WTD40N03
100
100
10us
(A)
D
I
10
100us
1ms
10ms
D=0.01 T
1
1
a
10 100
100ms
VDS(V)
Fig 7. Maximum Safe Operating Area
16
Id=20A
14
12
10
VD=16V
VD=20V
VD=24V
10
)
thjc
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
Normalized Thermal Response(R
0.01
0.00001
0.01 0.1 10.0001 0.001 10
t , Pulse Width
P
DM
Duty factor = t / T
Peak Tj=PDM x R
(s)
t
T
+ T
thjc
C
Fig 8. Effective Transient Thermal Impedance
10000
f=1.0MHz
8
6
,Gate to Source Voltage (V)
4
GS
V
2
1
0 5 10 15
Q
Total Gate Charge (nC)
G ,
20 25 30 35 40
Fig 9. Gate Charge Characteristics
100
(A)
S
I
10
1
0.1
T
j
T
j
1000
C(pF)
100
1 5 9
13 17 21 25 29
Ciss
Coss
Crss
VDS(V)
Fig 10. Typical Capacitance Characteristics
3
2
(V)
GS(th)
V
1
0.01
0.1 0.3 0.5 0.7
Fig 11. Forward Charateristics of
Reverse Diode
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0.9 1.1 1.3 1.5
VSD(V)
0
-50 0
T
j
50 100 150
Fig.12 Gate Threshold Voltage v.s.
Junction Temperature
5/6 12-Jul-07
Page 6
WTD40N03
6/6
12-Jul-07
D-PAK / (TO-252) Outline Dimension
E
A
4
1 2 3
D
B
M
C
G
H
J
K
L
Dim
A
B
C
D
E
G
H
J
K
L
M
D-PAK
Min
6.40
9.00
0.50
-
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Unit:mm
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
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