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PNP EPITAXIAL PLANAR TRANSISTOR
Lead(Pb)-Free
P b
WTD1386
Features:
* Low V
= -0.55(Typ.) (IC/I
CE(sat)
* Excellent DC Current Gain Characteristics
=-4A/-0.1A)
B
Mechanical Data:
* Case : Molded Plastic
* Weight : 0.925 grams
ABSOLUTE MAXIMUM RATINGS(TA=25ºC)
Rating
Collector to Base Voltage
1.BASE
2.COLLECTOR
3.EMITTER
Symbol Value
V
CBO
-30
2
1
D-PAK(TO-252)
Unit
3
V
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current
Total Device Disspation
Junction Temperature
Storage Temperature
Device Marking
WTD1386 = 1386
TC = 25°C
V
CEO
V
EBO
IC(DC)
IC(Pulse)
P
D
Tj
Tstg
-20
-6
-5
-10
20
+150
-55 to +150
V
V
A
W
˚C
˚C
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Page 2
WTD1386
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Base Breakdown Voltage
IC=-50µA, IE=0
Collector-Emitter Breakdown Voltage
IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
IE=-50µA, IC=0
Collector Cut-Off Current
VCB=-20V, IE=0
Emitter-Cut-Off Current
VEB=-5V, IC=0
ON CHARACTERISTICS
1
DC Current Gain
VCE=-2V, IC=-0.5A
Collector-Emitter Saturation Voltage
IC=-4A, IB=-0.1A
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Typ
-30
-20
-
-
-
-
-6 -- V
- - nA
- - nA
-500
-500
82 - 580 -
- - -1.0 V
V
V
Note 1.Pulse Test : Pulse width ≤ 380µs, Duty cycle ≤ 2%.
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=-6V, IE=50mA, f=30MHz
Output Capacitance
VCB=-20V, IE=0, f=1MHz
CLASSIFICATION OF h
FE
Rank P Q R E
Range
82 - 180 120 - 270 180 - 390 370 - 580
f
T
C
ob
- 120 - MHz
- 60 - pF
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Page 3
WTD1386
3/4
09-Sep-05
1000
hFE@VCE=2V
hFE
100
1
10 100 1000 10000
Collector Current-IC (mA)
Fig.1 Current Gain & Collector Current
10000
1000
100
V
@IC=20I
CE(sat)
10
B
V
@IC=40I
CE(sat)
B
Saturation Voltage (mV)
1
1
10 100 1000 10000
Collector Current-IC (mA)
Fig.2 Saturation Voltage & Collector Current
1000
1000
V
@IC=20I
BE(sat)
B
Saturation Voltage (mV)
1
1
10 100 1000 10000
Collector Current-IC (mA)
Fig.3 Saturation Voltage & Collector Current
25
20
15
10
(W), Power Dissipation
D
5
P
100
Cob
Capacitance (pF)
1
10.1
10 100
Reverse Biased Voltage (V)
Fig.4 Capacitance & Reverse-Biased Voltage
10
(A)
C
1
0.1
Collector Current-I
PT=1mS
PT=100mS
PT=1S
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0
0
20 80 100 12040 60 140 160
Fig.5 TC(˚C), Ambient Temperature
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Power Derating
0.01
1
10 100
Forward Voltage (V)
Fig.6 Safe Operating Area
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WTD1386
TO-252 Outline Dimensions
E
A
4
1 2 3
D
B
M
C
L
unit:mm
TO-252
G
H
Dim
A
B
C
J
D
E
G
H
J
K
K
L
M
Min
6.40
9.00
0.50
-
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
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