Page 1
P-Channel Enhancement
Mode Power MOSFET
P b
Lead(Pb)-Free
1
GATE
3
WTC9435
DRAIN
DRAIN CURRENT
-5.3 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
Features:
2
SOURCE
* Super High Dense Cell Design For Low RDS(on)
RDS(on) < 100mΩ @ VGS = -4.5V
* Rugged and Reliable
* Simple Drive Requirement
* SOT-23 Package
Applications:
* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System
Maximum Ratings (T
Rating Symbol Value Unit
Drain-Source Voltage
Continuous Drain Current -5.3
A
V
DS
V
GS
I
D
3
1
2
SOT-23
-30 V
±20
VGate-Source Voltage
A
Pulsed Drain Current
1
Total Power Dissipation (TA=25°C)
(TA=75°C)
Maximum Junction-Case
Maximum Junction-Ambient
2
Ambient Temperature
Case Temperature
Operating Junction Temperature Range
Storage Temperature Range
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
I
R
R
T
DM
P
D
θJC
θJA
T
a
T
c
T
J
stg
Device Marking
WTC9435 = P94
-20 A
2.5
1.2
24
62.5 °C/W
+150
+150
+150
-55~+150
W
°C/W
°C
°C
°C
°C
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1/4
Rev.A 29-Mar-10
Page 2
WTC9435
Electrical Characteristics (TA=25°C Unless Otherwise Specified)
Characteristic Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=-250µA
Gate-Source ThresholdVoltage
VDS=VGS, ID=-250µA
Gate-Source Leakage Current
VDS=0V,VGS= 20V
Zero Gate Voltage Drain Current
VDS=-24V,VGS=0V
+
-
V
(BR)DSS
V
GS (th)
I
GSS
I
DSS
-30
-1.0 -1.7
-
-
-
-
-
+
100
-
-
-3.0
-1
V
V
nA
µA
Drain-Source On-Resistance
VGS=-4.5V, ID=-4.2A
=-10V , ID=-5.3A
V
GS
orward Transconductance
F
VDS=-10V, ID=-5.3A
Dynamic
Input Capacitance
VDS=-15V,VGS=0V, f=1MHZ
Output Capacitance
VDS=-15V,VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=-15V,VGS=0V, f=1MHZ
Switching
Turn-On Delay Time
VDD=-15V, ID=-1A, V
Rise Time
VDD=-15V, ID=-1A, V
Turn-O Time
VDD=-15V, ID=-1A, V
Fall Time
VDD=-15V, ID=-1A, V
Total Gate Charge
VDS=-15V, ID=-5.3A,VGS=-10V
(2)
=-10V, RG=6Ω, RL=15Ω
GEN
=-10V, RG=6Ω, RL=15Ω
GEN
=-10V, RG=6Ω, RL=15Ω
GEN
=-10V, RG=6Ω, RL=15Ω
GEN
(2)
R
DS(on)
C
C
C
t
d(on)
t
t
Qg
g
t
fs
iss
oss
rss
f
-
-
-
-
-
-
-
r
)
-
-
-
-
70
50
10
745
440
120
9
15
75
40
28
100
70
-
-
-
-
-
-
-
-
-
m
Ω
S
F
P
nS
nS
nS
nS
nc
Gate-Source Charge
VDS=-15V, ID=-5.3A,VGS=-10V
Gate-Drain Charge
VDS=-15V, ID=-5.3A,VGS=-10V
Drain-Source
VGS=0V, IS=-2.6A
Continuous Source Current (Body Diode)
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad.
Diode Forward Voltage
(2)
WEITRON
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Qgs
Qgd
V
I
SD
S
-
-
-
-
2/4 Rev.A 29-Mar-10
3
7
-
-
-
-
-1.3
-2.6
nc
nc
V
A
Page 3
WTC9435
TYPICAL ELECTRICAL CHARACTERISTICS
WEITRON
http://www.weitron.com.tw
3/4 Rev.A 29-Mar-10
Page 4
WTC9435
SOT-23 Outline Dimension
SOT-23
A
B
TOP VIEW
D
E
G
H
C
K
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
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