Datasheet wtc4501 Datasheet

WTC4501

N-Channel Enhancement

3 DRAIN

Mode Power MOSFET

P b

Lead(Pb)-Free

1

GATE

2 SOURCE

Features:

* Leading Planar Technology for Low Gate Charge / Fast Switching. * 2.5V Rated for Low Voltage Gate Drive. * SOT−23 Surface Mount for Small Footprint.

Applications:

* Load/Power Switch for Portables. * Load/Power Switch for Computing. * DC−DC Conversion.

DRAIN CURRENT

3.2 AMPERES

DRAIN SOUCE VOLTAGE

20 VOLTAGE

3

1

2

SOT-23

Maximum Ratings (T

=25°C Unless Otherwise Specified)

A

Rating Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Body Diode)

Total Power Dissipation (TA=25 )

Maximum Junction-Ambient

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Operating Junction Temperature Range

Storage Temperature Range

1. Surface−mounted on FR4 board using 1 in sq pad size(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size.

°C

1,2

TA=25°C TA=85°C

tp=10μS

V

I

DM

I

P

R

θJA

T

L

T

Tstg

GS

D

S

J

DS

D

-55~+150

20

±12

3.2

2.4

10

1.6

1.25

100 300

260°

V

A

W

°C/W

°C

Device Marking

WTC4501 = N45

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WTC4501

Electrical Characteristics (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3) Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

(BR)DSS

DSS

VGS = 0 V, ID = 250 A 20 24.5 V

VGS = 0 V TJ = 25°C 1.5 A

VDS = 16 V TJ = 85°C 10 A

Gate−to−Source Leakage Current I

GSS

VDS = 0 V, VGS = ±12 V ±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage (Note 3) Negative Threshold Temperature

Coefficient

V

GS(TH)/TJ

Drain−to−Source On Resistance

R

Forward Transconductance g

GS(TH)

DS(on)

FS

VGS = VDS, ID = 250 A 0.65 1.2 V

VGS = 4.5 V, ID = 3.6 A 70 80 VGS = 2.5 V, ID = 3.1 A 85 105

VDS = 5.0 V, ID = 3.6 A 9 S

CHARGES AND CAPACITANCES

Input Capacitance Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Gate−to−Source Gate Charge Q Gate−to−Drain Charge Q

C

iss oss rss

G(TOT)

GS GD

VGS = 0 V, f = 1.0 MHz,

= 10 V

VDS = 10 V

V

DS

V

= 4.5 V, V

GS

ID = 3.6 A

= 3.6 A

I

D

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time Rise Time t Turn−Off Delay Time t Fall Time t

t

d(on)

d(off)

r

f

VGS = 4.5 V, VDS = 10 V,

I

= 3.6 A, RG = 6.0 

D

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage Reverse Recovery Time t Charge Time t Discharge Time t Reverse Recovery Charge Q

V

SD

RR

a

b RR

VGS = 0 V, ISD = 1.6 A 0.8 1.2 V

VGS = 0 V,

dIS/dt=100A/s

dIS/dt = 100 A/s,

= 1.6 A

I

S

3. Pulse Test: Pulse width  300 s, duty cycle  2%.

4. Switching characteristics are independent of operating junction temperatures.

DS

= 10 V,

22 mV/°C

−2.3 mV/°C

m

200

80

pF

50

2.4 6.0

0.5

nC

0.6

6.5 12

ns

12

ns

3

7.1

5

ns

1.9

3.0 nC

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TYPICAL ELECTRICAL CHARACTERISTICS

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SOT-23 Outline Dimension

SOT-23

A

B

TOP VIEW

D

E

G

H

C

K

L

J

M

Dim

A B C D E G H

J K L

M

Min

0.35

1.19

2.10

0.85

0.46

1.70

2.70

0.01

0.89

0.30

0.076

Max

0.51

1.40

3.00

1.05

1.00

2.10

3.10

0.13

1.10

0.61

0.25

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