Page 1
WTC2312
N-Channel Enhancement
Mode Power MOSFET
P b
Lead(Pb)-Free
1 GATE
Features:
* Super High Dense Cell Design For Low R
RDS(ON)<41mΩ @VGS=4.5V
DS(ON)<47mΩ @VGS=2.5V
R
DS(ON)<57mΩ @VGS=1.8V
R
* Capable of 2.5V gate drive
* Rugged and Reliable
* Lower On-Resistance
Application:
* Power Management in Notebook Computer.
* Portable Equipment.
* Battery Powered System.
DS(ON)
3 DRAIN
2 SOURCE
DRAIN CURRENT
4.9 AMPERES
DRAIN SOUCE VOLTAGE
20 VOLTAGE
3
1
2
SOT-23
Maximum Ratings
(TA=25℃ Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
3
@4.5V(TA=25°C)
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation(TA=25°C)
Maximum Junction-ambient
Operating Junction Temperature Range
Storage Temperature Range
,V
GS
,[email protected](TA=70°C)
1, 2
3
Device Marking
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
stg
20
±8
4.9
3.4
15
0.75 W
140 °C/W
+150
-55~+150
V
A
°C
°C
WTC2312=N12
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Rev.B 04-Aug-09
Page 2
WTC2312
Electrical Characteristics
Characteristic Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
VGS=0, I
Gate-Source Threshold Voltage
V
DS=VGS
Gate-Source Leakage Current
V
GS
Drain-Source Leakage Current(Tj=25˚C)
V
DS
Drain-Source On-Resistance
V
GS
V
GS
V
GS
D
, ID=250
= ±8V
=20V,VGS=0
=1.8V,ID=4.0A
=2.5V,ID=4.5A
=4.5V,ID=5.0A
A
(T =25°C Unless otherwise noted)
A
V
(BR)DSS
V
GS(Th)
I
GS S
I
DS S
R
DS(on)
20
0.4
- - nA
- -
-
-
-
-
0.6
31
24
21
-
1.0
±100
1
57
47
41
V
mΩ
Forward Transconductance
=10V, ID=5.0A
V
DS
Dynamic
Input Capacitance
VGS=0V, VDS=8V, f=1.0MHz
Output Capacitance
V
=0V, VDS=8V, f=1.0MHz
GS
Reverse Transfer Capacitance
V
=0V, VDS=8V, f=1.0MHz
GS
g
fs
Ciss
Coss
Crss
- 40 - S
- -
-
-
500
300
140
-
-
pF
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Page 3
WTC2312
Switching
Turn-on Delay Time
V
=4.5V, VDD=10V,ID=1.0A, RG=6Ω
GEN
2
td(on)
- 15 25
Rise Time
V
=4.5V, VDD=10V,ID=1.0A, RG=6Ω
GEN
V
=4.5V, VDD=10V,ID=1.0A, RG=6Ω
GEN
Fall Time
=4.5V, VDD=10V,ID=1.0A, RG=6Ω
V
GEN
Total Gate Charge
V
=10V, VGS=4.5V,ID=5A
DS
Gate-Source Charge
V
=10V, VGS=4.5V,ID=5A
DS
Gate-Drain Change
V
=10V, VGS=4.5V,ID=5A
DS
2
Source-Drain Diode Characteristics
Forward On Voltage
V
=0V, IS=1.7A
GS
2
t
r
t
)
d
t
f
Q
g
Q
gs
Q
gd
V
SD
- 40
- 48
- 45
-
- 1.4
-
- - 1.2
31
11.2
2.2
60
70
-
ns
-
-
nC
V
Diode Forward Current
Note:
1. Pulse width limited by Max, junction temperature.
3. Surface mounted on 1 in2 copper pad of PCB board.
I
S
-
-
1.7
A
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3/6 Rev.B 04-Aug-09
Page 4
WTC2312
12
TA=25oC
8
4
, Drain Current (A)
D
I
0
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
ID=3A
(mΩ)
RDS(ON)
60
50
40
T
=25oC
A
12
5.0V
4.5V
3.5V
2.5V
=1.8V
V
G
3210
8
4
, DrainCurrent (A)
D
I
0
VDS, Drain-to-Source Voltage (V)
TA=150oC
5.0V
4.5V
3.5V
2.5V
V
=1.8V
G
3210
Fig 2. Typical Output Characteristics
1.6
ID=4 A
=5V
V
G
1.4
DS(ON)
1.2
1.0
Normalized R
0.8
30
0 2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4.0
3.0
(A)
S
I
2.0
1.0
0.0
0 0.2 0.4 0.6 0.8 1 1.2
VSD, Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Tj=25oCTj=150oC
Reverse Diode
0.6
Tj, Junction Temperature (
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
1.4
(V)
GS(th)
1.0
Normalized V
0.6
0.2
, Junction Temperature (ºC)
T
j
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
05100105005-
ºC)
05100105005-
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Page 5
5/6
Rev.B 04-Aug-09
f
WTC2312
12
1000
=1.0MHz
ID=4A
10
C
V
=10V
8
6
4
, Gate to Source Voltage (V)
GS
V
2
0
0 2 4 6 8 10
DS
V
=12V
DS
=16V
V
DS
QG , Total Gate Charge (nC)
100
C (pF)
10
1 5 9 13 17 21 25
VDS , Drain-to-Source Voltage (V)
iss
C
oss
C
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
(A)
D
I
100
10
0.1
0.01
1
T
=25oC
A
Single Pulse
VDS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
DC
0010111.0
1
Duty factor=0.5
)
thja
0.1
0.01
0.2
0.1
0.05
0.01
Single Pulse
P
DM
t
T
Duty factor = t/T
Peak T
= PDM x R
j
R
= 270ºC/W
thja
Normalized Thermal Response (R
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
+ T
thja
a
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
V
DS
90%
10%
V
GS
Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit
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t
d(on)
V
G
Q
G
4.5V
Q
t
r
t
d(off)tf
GS
Q
GD
Charge
Q
Page 6
WTC2312
SOT-23 Outline Dimension
SOT-23
A
B
TOP VIEW
D
E
G
H
C
K
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
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