Page 1
N-Channel Enhancement
Mode Power MOSFET
3
WTC2306
DRAIN
DRAIN CURRENT
5.8 AMPERES
P b
Lead(Pb)-Free
1
GATE
Features:
* Super High Dense Cell Design For Low RDS(on)
RDS(on) < 38mΩ @ VGS = 10V
* Rugged and Reliable
* Simple Drive Requirement
* SOT-23 Package
Applications:
* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System
Maximum Ratings (T
A
DRAIN SOURCE VOLTAGE
30 VOLTAGE
2
SOURCE
3
1
2
SOT-23
Rating Symbol Value Unit
Drain-Source Voltage
Continuous Drain Current 5.8
Pulsed Drain Current
Total Power Dissipation (TA=25°C)
Maximum Junction-Ambient
Operating Junction Temperature Range
Storage Temperature Range
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
1
2
V
V
I
R
T
DS
GS
I
D
DM
P
D
θJA
T
J
stg
30 V
±12
30
1.4
140
-55~+150
-55~+150
Device Marking
VGate-Source Voltage
A
A
W
°C/W
°C
°C
WTC2306 = N06
WEITRON
http://www.weitron.com.tw
1/4
Rev.B 17-Aug-09
Page 2
WTC2306
Electrical Characteristics (TA=25°C Unless Otherwise Specified)
Characteristic Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=250µA
Gate-Source ThresholdVoltage
VDS=VGS, ID=250µA
V
(BR)DSS
V
GS (th)
30
0.7 -
-
1.4
-
V
V
Gate-Source Leakage Current
VDS=0V,VGS= 12V
Zero Gate Voltage Drain Current
VDS=24V , VGS=0V
Drain-Source On-Resistance
VGS=2.5V , ID=4.0A
VGS=4.5V , ID=5.0A
=10V , ID=5.8A
V
GS
Gate Resistance
VGS=0V, VDS=0V, f=1HMz
orward Transconductance
F
VDS=5V, ID=5A
+
-
Switching
Turn-On Delay Time
VDD=15V, ID=1A, V
Rise Time
VDD=15V, ID=1A, V
Turn-O Time
VDD=15V, ID=1A, V
Fall Time
VDD=15V, ID=1A, V
Total Gate Charge
VDS=15V, ID=5.8A,VGS=4.5V
(2)
=10V, RG=3Ω, RL=2.7Ω
GEN
=10V, RG=3Ω, RL=2.7Ω
GEN
=10V, RG=3Ω, RL=2.7Ω
GEN
=10V, RG=3Ω, RL=2.7Ω
GEN
(2)
I
R
DS(on)
t
d(on)
t
t
Qg
I
GSS
DSS
R
g
t
-
-
-
-
-
g
fs
r
)
f
6
10
- 7 14
- 15 30
- 38 76
- 3 6
- 11 14.3
45
34
31
7
15
-
-
±100
1
62
nA
µA
m
Ω
43
38
7.5
-
Ω
S
nS
nS
nS
nS
nc
Gate-Source Charge
VDS=15V, ID=5.8A,VGS=4.5V
Gate-Drain Charge
VDS=15V, ID=5.8A,VGS=4.5V
Drain-Source
VGS=0V, IS=1.0A
Continuous Source Current (Body Diode)
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300µs, duty cycle ≤ 2%.
Diode Forward Voltage
(2)
WEITRON
http://www.weitron.com.tw
Qgs
Qgd
V
I
S
SD
- 1.6 2.08
- 2.8 3.64
-
-
-
-
1.2
2.5
nc
nc
V
A
2/4 Rev.B 17-Aug-09
Page 3
WTC2306
TYPICAL ELECTRICAL CHARACTERISTICS
WEITRON
http://www.weitron.com.tw
3/4 Rev.B 17-Aug-09
Page 4
WTC2306
SOT-23 Outline Dimension
SOT-23
A
B
TOP VIEW
D
E
G
H
C
K
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
WEITRON
http://www.weitron.com.tw
4/4 Rev.B 17-Aug-09
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