Datasheet wtc2301 Datasheet

P-Channel Enhancement Mode Power MOSFET

P b

Lead(Pb)-Free

1

GATE

3

DRAIN

WTC2301

DRAIN CURRENT

-2.3 AMPERES

DRAIN SOURCE VOLTAGE

-20 VOLTAGE

Features:

*Super High Dense Cell Design For Low R

R

<100mΩ@VGS=-4.5V

DS(ON)

*Rugged and Reliable *Simple Drive Requirement *SOT-23 Package

DS(ON)

Applications

*Power Management in Notebook Computer *Portable Equipment *Battery Powered System

Maximum Ratings

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current Pulsed Drain Current

1,2

(TA=25℃ Unless Otherwise Specified)

Rating Symbol Value Unit

3

2

SOURCE

3

1

2

SOT-23

V

DS

V

GS

I

D

I

DM

-20

±8

-2.3

-8

V

A A

Total Power Dissipation(TA=25˚C)

(TA=75˚C)

Maximum Junction-ambient

Maximum Junction-case

Ambient Temperature

Case Temperature

Operating Junction Temperature Range

Storage Temperature Range

3

Device Marking

WTC2301 = 01

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1/6

P

D

R

θJA

R

θJC

T

a

T

c

T

J

T

stg

0.9

0.57

140 ˚C /W 100 ˚C /W

150

-55~+150

W

˚C

Rev.D 29-Mar-10

WTC2301

Electrical Characteristics(T

Characteristic Symbol Min Typ Max Unit

Static

Drain-Source Breakdown Voltage VGS=0,I

Gate-Source Threshold Voltage V

DS=VGS,ID

Gate-Source L eakage C urrent VGS= ±8 V

Drain- Source Leakage Current(Tj=25˚C) V

DS

Drain-Source On-Resistance VGS=-4.5V,I V

GS

=-250μA

D

=-250

=-9.6V,VGS=0

=-2.8A

D

=-2.5V,I

=-2.0A

D

μA

2

= 25℃ Unless otherwise noted)

A

V

(BR)DSS

V

GS(Th)

I

GSS

I

DSS

R

DS(on)

-20

-0.45

- -

-

69 83

-

-0.95

±100

-1

100 150

V

nA

μA

mΩ

Forward Transconductance VDS=-5.0 V, I

=-4.0A

D

Dynamic

Input Capacitance

VGS=0V,VDS=-6V,f=1.0MHz Output Capacitance

VGS=0V,VDS=-6V,f=1.0MHz

Reverse Transfer Capacitance

VGS=0V,VDS=-6V,f=1.0MHz

g

fs

C

iss

C

oss

C

rss

- 6.5 - S

- -

-

882.51

145.54

97.26

-

pF

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2/6 Rev.D 29-Mar-10

WTC2301

Switching

Turn-on Delay Time VDD=-6V,VGEN =-4.5V,ID=-1A,RL =6Ω ,RG=6Ω

2

td(on)

- 17.28 -

Rise Time VDD=-6V,VGEN =-4.5V,ID=-1A,RL =6Ω ,RG=6Ω

Turn-off Delay Time VDD=-6V,VGEN =-4.5V,ID=-1A,RL =6Ω ,RG=6Ω

Fall Time VDD=-6V,VGEN =-4.5V,ID=-1A,RL =6Ω ,RG=6Ω

Total Gate Charge VDS=-6.0V,VGS=-4.5V,I D=-2.8A

Gate-Source Charge VDS=-6.0V,VGS=-4.5V,I D=-2.8A

Gate-Drain Change VDS=-6.0V,VGS=-4.5V,I D=-2.8A

2

Source-Drain Diode Characteristics

Forward On Voltage

VGS =0V,IS=-0.75A, Tj=25 C

2

t

r

td(off)

t

f

Q

g

Q

gs

Q

gd

V

SD

- 3.73

- -36.05

- -

-

- 5.49

-

- -0.8 -1.2

6.19

15.23

2.74

-

ns

nC

V

Continuous Source Current(Body Diode)

Note: 1. Pulse width limited by Max, junction temperature.

2. pulse width≦300μs, duty cycle≦2%.

3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad.

I

S

- - 2.4-

A

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3/6 Rev.D 29-Mar-10

WTC2301

Typical Electrical Characteristics

18

16

)

14

12

EN T ( A

10

8

N C U R R

6

4

Id D R AI

2

0

Vds=5V

0 0.5 1 1.5 2 2. 5

Vg s , GA T E - TO- S O URC E V OL T A G E( V )

25°C

Figure 1. Transfer Characteristics

0.5

)

0.45

0.4

0.35

0.3

0.25

0.2

0.15

)-O n - Res i s tan c e (Ω

0.1

0.05

Rd s ( o n

0

0 1 2 3 4 5 6 7 8

Vgs= 1.5V

Vgs=2V

Vgs=2.5V

Id - D r ain c urr e n t

20 18

25°C

) A

16 14

EN T (

12

UR R

10

8

AI N C R

6 4

Id , D

2 0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Vd s , D RAI N - TO- S O U RC E V OL T A G E(V )

Vgs=2.5V

Vgs=2V

Vgs=1.5V

Figure 2. On–Region Characteristics

0.5

0.45

0.4

nc e ( Ω) a

0.35

0.3

is t

0.25

-R e s

0.2

On

-

0.15

0.1

0.05

Rd s ( o n)

0

0 2 4 6 8

Vg s - G at e - t o-S o u rce V olt a g e (V )

Id=3 .5A

Figure 3. On–Resistance versus Drain Current

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Figure 4. On-Resistance vs. Gate-to-Source Voltage

4/6 Rev.D 29-Mar-10

WTC2301

Typical Electrical Characteristics

12

10

8

(V )

6 gs V

4

2

0

0 5 10 15 2 0 25 30

Qg s ( n C)

Figure 5. Gate Charge

120

100

) R

80

60

40

Rd s ( on) ( m

20

0

-50 0 50 100 150

VGS= -4.5 V ID =2A

Te mp (oC)

1800

1600

1400

1200

ce n

1000

800

ac i t a p

600

Ca

400

200

0

0 1 2 3 4 5 6 7

Vd s

Ciss

Coss

Crss

Figure 6. Capacitance

0

-0.1

-0.2

-0.3

V)

-0.4

H) (

-0.5

(T

-0.6

GS V

-0.7

-0.8

-0.9

-1

-50 0 50 100 150

ID=250uA

Te mp (oC)

Figure 7. On-Resistance Vs.Junction Temperature

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Figure 8. Vth Vs.Junction Temperature

5/6 Rev.D 29-Mar-10

WTC2301

SOT-23 Outline Dimension

SOT-23

A

B

TOP VIEW

D

E

G

H

C

K

L

J

M

Dim

A B C D E G H

J K L

M

Min

0.35

1.19

2.10

0.85

0.46

1.70

2.70

0.01

0.89

0.30

0.076

Max

0.51

1.40

3.00

1.05

1.00

2.10

3.10

0.13

1.10

0.61

0.25

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6/6 Rev.D 29-Mar-10