Page 1
WTA8921
PNP Silicon Transistors
* “G” Lead(Pb)-Free
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board
T =25 C
A
Derate above 25 C
Thermal Resistance, Junction Ambient
(Ta=25 C)
(1)
COLLECTOR
BASE
EMITTER
Symbol
V
CEO
V
CBO
V
EBO
I
C
Symbol Value
P
D
R
θJA
T
TstgJunction and Storage, Temperature
J,
Value
-30
-35
-5.0
-800
200
1.6
625
-55 to +150
3
1
2
SOT-23
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/ C
C/W
C
Device Marking
WTA8921=IO, IY
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -1 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -1 uAdc, IC=0)
Collector Cutoff Current (V
Emitter Cutoff Current (V
I
1. FR-5=1.0 0.75 0.062 in
I
I
I
= -30Vdc, IE=0)
CB
= -5.0 V c, I =0)
EB
d
C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
-30
-35
-5.0
-
-
-
-
-
-1.0
-1.0
Vdc
Vdc
Vdc
uAdc
uAdc
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Page 2
WTA8921
ELECTRICAL CHARACTERISTICS
Characteristics
ON CHARACTERISTICS
(T
=25 C unless otherwise noted) (Countinued)
A
Symbol
Typ
Max
UnitMin
DC Current Gain
(I = -100 mAdc, V
C
(I = -800 mAdc, V
C
Collector-Emitter Saturation Voltage
(I
= -500 mAdc, I = -20mAdc)
C
Output Capacitance
(V =-10Vdc, I =0, f=1MHZ)
CB
Transition Frequency
(I
= -10mAdc, VCE=-5 Vdc, f=30MHz)
C
E
CE
CE
B
= -1 Vdc)
= -1 Vdc)
CLASSIFICATION OF h
Rank
Range
FE
(1)
100-200
O
h
FE
h
FE
V
CE(sat)
Cob
f
-
2.0
-
-
-
320
-
-0.4
-
-
-
-
Vdc
PF
MHz
(1)
(2)
T
100
40
-
-
80
Y
160-320
WEITRON
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Page 3
WTA8921
FIG.1
FIG.3
FIG.2
FIG.4
FIG.5
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Page 4
WTA8921
SOT-23 Package Outline Dimensions
A
TOP VIEW
D
E
G
H
B
C
K
L
J
Unit:mm
Dim
M
M
A
B
C
D
E
G
H
J
K
L
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
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