Page 1
Surface Mount N-Channel
1/6
01-Jul-05
Enhancement Mode MOSFET
P b
Lead(Pb)-Free
Featur es:
*Sup er high dense c ell design f or lo w R DS(ON)
R <11 m @V =10V
DS(ON)
R <15 m @V =4.5V
DS(ON)
*R ugged and R eliable
*SO- 8 Package
Ω
Ω
GS
GS
WT4410M
1
S
2
S
S
3
G
4
D
8
D
7
D
6 5
D
DRAIN CURRENT
10 AMPERS
DRAIN SOUCE V OL T AGE
30 V OL T AGE
1
SO-8
Maximum Ratings ( T A=25 C U nless O ther wise S p ecified)
Rating Symbol V alue Unite
D r ain-S our c e V oltage
G a t e-S our c e V oltage
C on tinuous D r ain C ur r en t ( T =125 C)
P ulsed D r ain C ur r en t
(2)
J
D r ain-S our c e D io de F or w ar d C ur r en t
P o w er D issipa tion
(1)
M aximax J unc tion-t o-A mbien t
Op er a ting J unc tion and S t or age
T emp er a tur e R ange
(1)
(1)
V
DS
V
GS
I
D
I
DM
I
S
P
D
R
θ
JA
T J , T st g
Device Marking
30
+
-
10
30
2.3
2.5
50
20
V
V
A
A
A
W
C/W
-55 t o 150 C
W T4410M=SDM4410
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Page 2
WT4410M
2/6
01-Jul-05
Electrical Characteristics (T
Characteristic
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=250 uA
Gate-Source Threshold Voltage
VDS=VGS, ID=250 uA
Gate-Source Leakage Current
VDS=0V, VGS= 16V
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
Drain-Source On-Resistance
VGS=10V, ID=10A
VGS=4.5V, ID=5A
On-State Drain Current
VDS=10V, VGS=10A
Forward Transconductance
VDS=10V, ID=20A
Dynamic
Input Capacitance
VDS=15V, VGS=0V, f=1MHZ
Output Capacitance
VDS=15V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=15V, VGS=0V, f=1MHZ
(2)
+
-
(3)
=25 C Unless otherwise noted)
A
Symbol
V
(BR)DSS
V
GS (th)
I
GSS
I
DSS
r
DS (on)
Min Typ Max
30
1 1.5
-
-
-
-
I
D(on)
g
fs
C
iss
C
oss
C
rss
40
-
-
-
-
-
-
-
11
15
- -
18
1375
670
200
+
100
-
13.5
1
20
Unit
-
3
-
-
-
-
V
V
nA
uA
m
A
S
P
Ω
F
Switching
Turn-On Delay Time
V
=10V,V =15V, I =-1A, R =6Ω
GS
Rise Time
V
=10V,V =15V, I =-1A, R =6Ω
GS
Turn-Off Time
V
=10V,V =15V, I =-1A, R =6Ω
GS
Fall Time
V
=10V,V =15V, I =-1A, R =6Ω
GS
Total Gate Charge
VDS=10V, ID=10A, V =10V
VDS=10V, ID=10A, V =4.5V
Gate-Source Charge
VDS=10V, ID=10A, V =10V
Gate-Drain Charge
VDS=10V, ID=10A, V =10V
Drain-Source
VGS=0V, IS=2.3A
Note:
1. Surface Mounted on FR4 Board t 10sec.
2. Pulse Test : PW 300us, Duty Cycle 2%.
3. Guaranteed by Design, not Subject to Production Testing.
(3)
DD D
DD D
DD D
DD D
GS
GS
GS
GS
Diode Forward Voltage
<
_
GEN
GEN
GEN
GEN
<
_
<
_
t
d(on)
t
d(off)
Qg
Qgs
Qgd
V
-
t
r
-
-
t
f
-
-
-
-
-
SD
-
30
32
132
30
40
20
8.2
5.3
0.76
-
-
-
-
50
24
-
-
1.1
nS
nS
nS
nS
nc
nc
nc
V
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Page 3
WT4410M
3/6
01-Jul-05
WE IT R ON
25
V =10,9,8,7,6,5,4V
GS
20
15
10
5
D
I ,DRAIN CURRENT(A)
0
0.50 1 1.5 2 2.5 3
V , DRAIN-TO-SOURCE VOLTAGE(V)
DS
FIG.1. Output Characteristics
1500
1200
P
900
600
300
C ,CAPACITANCE( F)
0
0 5 10 15 20 25 30
V , DRAIN-TO-SOURCE VOLTAGE(V)
DS
FIG.3 Capacitance
V =3V
GS
Ciss
Coss
Crss
25
20
15
10
5
D
I , DRAIN CURRENT(A)
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
V , GATE-TO-SOURCE VOLTAGE(V)
GS
T =125 C
j
FIG.2 Transfer Characteristics
0.030
0.025
0.020
0.015
0.010
0.005
DS(ON)
R , ON-RESISTANCE(Ω)
V =10V
GS
T =125 C
0
0 10 205 15
I , DRAIN CURRENT(A)
D
FIG.4 On-Resistance Variation with
Drain Current and Temperature
25 C
-55 C
j
25 C
-55 C
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1.09
1.06
1.03
1.00
0.97
th
V ,NORMALIZED
0.94
0.91
-50 -25 0 25 50 75 100 125 150
T ,JUNCTION TEMPERATURE( C)
GATE-SOURCE THRESHOLD VOLTAGE(V)
j
FIG.5 Gate Threshold Variation
with Temperature
WEITRON
V =V
GS
DS
I =250uA
D
1.15
I =-250uA
D
1.10
1.05
1.00
0.95
0.90
DSS
BV ,NORMALIZED
0.85
-50 -25 0 25 50 75 100 125
T ,JUNCTION TEMPERATURE( C)
DRAIN-SOURCE BREAKDOWN VOLTAGE(V)
j
FIG.6 Breakdown Voltage Variation
with Temperature
150
Page 4
WT4410M
4/6
01-Jul-05
WE IT R ON
25
20
15
10
5
FS
0
g ,TRANSCONDUCTANCE(S)
0 5 10 15 20
I ,DRAIN-SOURCE CURRENT(A)
DS
FIG.7 Transconductance Variation
with Drain Current
10
V =10V
DS
I =40A
D
8
6
4
V =15V
DS
40.0
10.0
S
1
I ,SOURCE-DRAIN CURRENT(A)
0.4 0.6 0.8 1.0 1.2 1.4
V ,BODY DIODE FORWARD VOLTAGE(V)
SD
FIG.8 Body Diode Forward Voltage
Variation with Source Current
40
DS
10
R (ON)Limit
100 ms
1
1
1s
DC
10ms
2
0
GS
V ,GATE TO SOURCE VOLTAGE(V)
0 5 10 15 20 25 30 35 40
Q ,TOTAL GATE CHARGE(nC)
g
FIG.9 Gate Charge
DD
V
IN
V
D
V
G S
G EN
R
G
S
FIG.11 Switching Test Circuit
D
I , DRAIN CURRENT(A)
0.1
V =10V
DS
Single Pulse
T =25 C
0.03
C
0.1 1 10 30 50
V ,DRAIN-SOURCE CURRENT(V)
DS
FIG.10 Maximum Safe Operating Area
on
t
d(off)
t
r
d(on)
V
V
t
OU T
IN
10%
R
L
OU T
V
t
90%
10% 10%
INVE R TE D
50% 50%
90%
t
off
f
t
90%
P ULS E WIDTH
FIG.12 Switching Waveforms
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WEITRON
Page 5
WT4410M
5/6
01-Jul-05
10
Duty Cycle=0.5
1
0.2
0.1
0.05
0.1
THERMAL RESISTANCE
,NORMALIZED TRANSIENT
r(t)
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Single Pulse
SQUARE WAVE PULSE DURATION(SEC)
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE
WE IT R ON
DM
P
1
t
2
t
1. R jA (t)=r (t) * R j
θ
2. R j =See Datasheet
A
θ
3. TjM-TA = PDM* R j (t)
4. Duty Cycle, D=t /t
1
θ A
A
θ
2
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Page 6
WT4410M
6/6
01-Jul-05
SO-8 Package Outline Dimensions
1
D
(4X)
7
C
A
2A
e
B
A1
Unit:mm
θ
L
E1
7(4X)
eB
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SYMBOLS
A
A1
B
C
D
E1
eB
e
L
θ
MILLIMETERS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
1.27 BSC
0.60
0.80
0
8
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