Datasheet WS512K32N-45H1QA, WS512K32N-45H1Q, WS512K32N-45H1MA, WS512K32N-45H1IA, WS512K32N-45H1I Datasheet (White Electronic Designs)

1

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WS512K32-XXX

512Kx32 SRAM MODULE, SMD 5962-94611

FEATURES

n Access Times of 15*, 17, 20, 25, 35, 45, 55ns

n Packaging

 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP

(Package 400).

 68 lead, 40mm Hermetic Low Profile CQFP, 3.5mm (0.140")

(Package 502)

1

, Package to be developed.

 68 lead, Hermetic CQFP (G2T)

1

, 22.4mm (0.880") square
(Package 509) 4.57mm (0.180") height.
Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 3).

 68 lead, Hermetic CQFP (G1U), 23.9mm (0.940") square

(Package 519) 3.57mm (0.140") height.
Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 3).

 68 lead, Hermetic CQFP (G1U), 23.9mm (0.940") square

(Package 524) 4.06mm (0.160") height.

n Organized as 512Kx32, User Configurable as 1Mx16 or 2Mx8

FIG. 1 PIN CONFIGURATION FOR WS512K32N-XH1X

PIN DESCRIPTION

I/O0-31 Data Inputs/Outputs

A0-18 Address Inputs

WE1-4 Write Enables

CS1-4 Chip Selects

OE Output Enable

VCC Power Supply

GND Ground

NC Not Connected

TOP VIEW

BLOCK DIAGRAM

n Commercial, Industrial and Military Temperature Ranges

n TTL Compatible Inputs and Outputs

n 5 Volt Power Supply

n Low Power CMOS

n Built-in Decoupling Caps and Multiple Ground Pins for Low

Noise Operation

n Weight

WS512K32-XH1X - 13 grams typical
WS512K32-XG2TX

1

- 8 grams typical
WS512K32-XG1UX - 5 grams typical
WS512K32-XG1TX - 5 grams typical
WS512K32-XG4TX

1

- 20 grams typical

* 15ns Access Time available only in Commercial and Industrial Temperature.
This speed is not fully characterized and is subject to change without notice.

Note 1: Package Not Recommended For New Design

November 2001 Rev. 9

2

WS512K32-XXX

White Electronic Designs Corporation  [phone]  www.whiteedc.com

PIN DESCRIPTION

FIG. 2 PIN CONFIGURATION FOR WS512K32-XG4TX

1

TOP VIEW

BLOCK DIAGRAM

I/O0-31 Data Inputs/Outputs

A0-18 Address Inputs

WE Write Enables

CS1-4 Chip Selects

OE Output Enable

VCC Power Supply

GND Ground

NC Not Connected

FIG. 3 PIN CONFIGURATION FOR WS512K32-XG2TX

1

, WS512K32-XG1TX

AND WS512K32-XG1UX

TOP VIEW

The White 68 lead CQFP fills
the same fit and function as the
JEDEC 68 lead CQFJ or 68
PLCC. But the CQFJ has the
TCE and lead inspection
advantage of the CQFP form.

PIN DESCRIPTION

BLOCK DIAGRAM

I/O0-31 Data Inputs/Outputs

A0-18 Address Inputs

WE1-4 Write Enables

CS1-4 Chip Selects

OE Output Enable

VCC Power Supply

GND Ground

NC Not Connected

Note 1: Package Not Recommended For New Design

Note 1: Package Not Recommended For New Design

3

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WS512K32-XXX

Parameter Symbol Min Ma x Unit

Operating Temperature T

A -55 +125 °C

Storage Temperature T

STG -65 +150 °C

Signal Voltage Relative to GND V

G -0.5 Vcc+0.5 V

Junction Temperature T

J 150 °C

Supply Voltage V

CC -0.5 7.0 V

TRUTH TABLE

RECOMMENDED OPERATING CONDITIONS

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Min Max Unit

Supply Voltage V

CC 4.5 5.5 V

Input High Voltage V

IH 2.2 VCC + 0.3 V

Input Low Voltage V

IL -0.5 +0.8 V

Operating Temp (Mil) T

A -55 +125 °C

CAPACITANCE

(TA = +25°C)

Parameter

Symbol

Conditions Max Unit

OE capacitance COE

VIN = 0 V, f = 1.0 MHz

50 pF

WE

1-4 capacitance CWE

VIN = 0 V, f = 1.0 MHz

pF
HIP (PGA) 20
CQFP G4T 5 0
CQFP G2T/G1U/G1T 20

CS1-4 capacitance CCS

VIN = 0 V, f = 1.0 MHz

20 pF

Data I/O capacitance CI/O

V

I/O

= 0 V, f = 1.0 MHz

20 pF

Address input capacitance C

AD

V

IN

= 0 V, f = 1.0 MHz

50 pF

This parameter is guaranteed by design but not tested.

Parameter Symbol Conditions Units

Min Max

Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA

Output Leakage Current ILO CS = VIH , OE = VIH, VOUT = GND to VCC 10 µA

Operating Supply Current x 32 Mode ICC x 32 CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 6 60 mA

Standby Current ISB CS = VIH, OE = VIH , f = 5MHz, Vcc = 5.5 80 mA

Output Low Voltage V

OL IOL = 8mA for 15 - 35ns, 0. 4 V

IOL = 2.1mA for 45 - 55ns, Vcc = 4.5

Output High Voltage V

OH IOH = -4.0mA for 15 - 35ns, 2. 4 V

I

OH = -1.0mA for 45 - 55ns, Vcc = 4.5

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

DC CHARACTERISTICS

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

DATA RETENTION CHARACTERISTICS

(TA = -55°C to +125°C)

Parameter Symbol Conditions Units

Min Max

Data Retention Supply Voltage VDR CS £ V CC -0.2V 2.0 5.5 V

Data Retention Current ICCDR1 VCC = 3V 28 mA

Low Power Data Retention I

CCDR2 VCC = 3V 16 mA

C ur r en t (WS512K32L-XXX)

CS OE WE Mode Data I/O Power

H X X Standby High Z Standby
L L H Read Data Out Active
L H H Out Disable High Z Active
L X L Write Data In Active

4

WS512K32-XXX

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AC CHARACTERISTICS

(V

CC

= 5.0V, VSS = 0V, TA = -55°C to +125°C)

FIG. 4

AC TEST CIRCUIT

NOTES:

V

Z is programmable from -2V to +7V.

I

OL & IOH programmable from 0 to 16mA.

Tester Impedance Z

0 = 75 ý.

V

Z is typically the midpoint of VOH and VOL.

I

OL & IOH

are adjusted to simulate a typical resistive load circuit.

ATE tester includes jig capacitance.

AC CHARACTERISTICS

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

AC TEST CONDITIONS

Parameter Typ Unit

Input Pulse Levels VIL = 0, VIH = 3.0 V

Input Rise and Fall 5 ns

Input and Output Reference Level 1. 5 V

Output Timing Reference Level 1.5 V

Parameter Symbol -15* -17 -20 -25 -35 -45 -55 Units

Write Cycle Mi n Max Mi n Ma x Mi n Ma x Mi n Ma x Mi n Ma x Min Max Mi n Ma x

Write Cycle Time tWC 15 17 20 25 35 45 55 ns

Chip Select to End of Write tCW 13 15 15 17 25 35 50 ns

Address Valid to End of Write t AW 13 15 15 17 25 35 50 ns

Data Valid to End of Write tDW 10 11 12 13 20 25 25 ns

Write Pulse Width tWP 13 15 15 17 25 35 40 ns

Address Setup Time tAS 22222 22ns

Address Hold Time tAH 00000 55ns

Output Active from End of Write tOW

1

22344 55ns

Write Enable to Output in High Z tWHZ

1

8 9 11 13 15 20 20 ns

Data Hold Time t

DH 00000 00ns

* 15ns Access Time available only in Commercial and Industrial Temperature. This speed is not fully characterized and is subject to change without notice.

1. This parameter is guaranteed by design but not tested.

2. The Address Setup Time of minimum 2ns is for the G2T, G1U and H1 packages. t

AS minimum for the G4T package is 0ns.

Parameter Symbol

-15* -17 -20 -25 -35 -45 -55 Units

Read Cycle Mi n Ma x Mi n Max Min Max Min Ma x Min Max Min Max Min Ma x

Read Cycle Time tRC 15 17 20 25 35 45 55 ns

Address Access Time tAA 15 17 20 25 35 45 55 ns

Output Hold from Address Change t OH 0000000ns

Chip Select Access Time tACS 15 17 20 25 35 45 55 ns

Output Enable to Output Valid tOE 8 9 10 12 25 25 25 ns

Chip Select to Output in Low Z tCLZ

1

2222444ns

Output Enable to Output in Low Z tOLZ

1

0000000ns

Chip Disable to Output in High Z tCHZ

1

12 12 12 12 15 20 20 ns

Output Disable to Output in High Z t

OHZ

1

12 12 12 12 15 20 20 ns

* 15ns Access Time available only in Commercial and Industrial Temperature. This speed is not fully characterized and is subject to change without notice.

1. This parameter is guaranteed by design but not tested.

5

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WS512K32-XXX

WS32K32-XHX

FIG. 5

TIMING WAVEFORM - READ CYCLE

FIG. 7

WRITE CYCLE - CS CONTROLLED

FIG. 6

WRITE CYCLE - WE CONTROLLED

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WS512K32-XXX

White Electronic Designs Corporation  [phone]  www.whiteedc.com

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)

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PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

Note 1: Package Not Recommended For New Design

7

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WS512K32-XXX

PACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)

1

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

The White 68 lead G2T CQFP
fills the same fit and function as
the JEDEC 68 lead CQFJ or 68
PLCC. But the G2T has the TCE
and lead inspection advantage
of the CQFP form.

Note 1: Package Not Recommended For New Design

8

WS512K32-XXX

White Electronic Designs Corporation  [phone]  www.whiteedc.com

PACKAGE 519: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1U)

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

The White 68 lead G1U CQFP
fills the same fit and function as
the JEDEC 68 lead CQFJ or 68
PLCC. But the G1U has the TCE
and lead inspection advantage
of the CQFP form.

9

White Electronic Designs Corporation  [phone]  www.whiteedc.com

WS512K32-XXX

PACKAGE 524: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1T)

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

The White 68 lead G1T CQFP
fills the same fit and function as
the JEDEC 68 lead CQFJ or 68
PLCC. But the G1T has the TCE
and lead inspection advantage
of the CQFP form.

10

WS512K32-XXX

White Electronic Designs Corporation  [phone]  www.whiteedc.com

ORDERING INFORMATION

LEAD FINISH:

Blank = Gold plated leads

A = Solder dip leads

DEVICE GRADE:

Q = MIL-STD-883 Compliant

M = Military Screened -55°C to +125°C

I = Industrial -40°C to 85°C

C = Commercial 0°C to +70°C

PACKAGE TYPE:

H1 = Ceramic Hex-In-line Package, HIP (Package 400)

G2T1 = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509)

G4T

1

= 40mm Low Profile CQFP (Package 502)

G1U = 23.9mm Low Profile CQFP (Package 519)

G1T = 23.9mm Low Profile CQFP (Package 524)

ACCESS TIME (ns)

IMPROVEMENT MARK:

Blank = Standard Power
N = No Connect at pin 21 and 39 in HIP for Upgrades
L = Low Power Data Retention

ORGANIZATION, 512Kx32

User configurable as 1Mx16 or 2Mx8

SRAM

WHITE ELECTRONIC DESIGNS CORP.

W S 512K 32 X - XXX X X X

Note 1: Package Not Recommended For New Design

11

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WS512K32-XXX

DEVICE TYPE SPEED PACKAGE SMD NO.

512K x 32 SRAM Module 55ns 66 pin HIP (H1) 5962-94611 05HTX

512K x 32 SRAM Module 45ns 66 pin HIP (H1) 5962-94611 06HTX

512K x 32 SRAM Module 35ns 66 pin HIP (H1) 5962-94611 07HTX

512K x 32 SRAM Module 25ns 66 pin HIP (H1) 5962-94611 08HTX

512K x 32 SRAM Module 20ns 66 pin HIP (H1) 5962-94611 09HTX

512K x 32 SRAM Module 17ns 66 pin HIP (H1) 5962-94611 10HTX

512K x 32 SRAM Module 55ns 68 lead CQFP Low Profile (G4T)

1

5962-94611 05HYX

512K x 32 SRAM Module 45ns 68 lead CQFP Low Profile (G4T)

1

5962-94611 06HYX

512K x 32 SRAM Module 35ns 68 lead CQFP Low Profile (G4T)

1

5962-94611 07HYX

512K x 32 SRAM Module 25ns 68 lead CQFP Low Profile (G4T)

1

5962-94611 08HYX

512K x 32 SRAM Module 20ns 68 lead CQFP Low Profile (G4T)

1

5962-94611 09HYX

512K x 32 SRAM Module 17ns 68 lead CQFP Low Profile (G4T)

1

5962-94611 10HYX

512K x 32 SRAM Module 55ns 68 lead CQFP (G2T)

1

5962-94611 05HMX

512K x 32 SRAM Module 45ns 68 lead CQFP (G2T)

1

5962-94611 06HMX

512K x 32 SRAM Module 35ns 68 lead CQFP (G2T)

1

5962-94611 07HMX

512K x 32 SRAM Module 25ns 68 lead CQFP (G2T)

1

5962-94611 08HMX

512K x 32 SRAM Module 20ns 68 lead CQFP (G2T)

1

5962-94611 09HMX

512K x 32 SRAM Module 17ns 68 lead CQFP (G2T)

1

5962-94611 10HMX

512K x 32 SRAM Module 55ns 68 lead CQFP (G1U) 5962-94611 05H9X

512K x 32 SRAM Module 45ns 68 lead CQFP (G1U) 5962-94611 06H9X

512K x 32 SRAM Module 35ns 68 lead CQFP (G1U) 5962-94611 07H9X

512K x 32 SRAM Module 25ns 68 lead CQFP (G1U) 5962-94611 08H9X

512K x 32 SRAM Module 20ns 68 lead CQFP (G1U) 5962-94611 09H9X

512K x 32 SRAM Module 17ns 68 lead CQFP (G1U) 5962-94611 10H9X

Note 1: Package Not Recommended For New Design