Datasheet WS1M8L-45DJIA, WS1M8L-45DJI, WS1M8L-45DJCA, WS1M8L-45DJC, WS1M8L-45CMA Datasheet (White Electronic Designs)

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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
HI-RELIABILITY PRODUCT
WS1M8-XXX
2x512Kx8 DUALITHIC™ SRAM
FEATURES
Access Times 17, 20, 25, 35, 45, 55ns
Revolutionary, Center Power/Ground Pinout
•32 pin, Hermetic Ceramic DIP (Package 300)
•36 lead Ceramic SOJ (Package 100)
•36 lead Ceramic Flatpack (Package 226)
October 2000 Rev. 4
36 CSOJ 36 FLATPACK
TOP VIEW
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19
A0 A1 A2 A3
A4 CS1 I/O0 I/O1 V
CC
GND
I/O2 I/O3
WE
A5
A6
A7
A8
A9
NC A18 A17 A16 A15 OE I/O7 I/O6 GND V
CC
I/O5 I/O4 A14 A13 A12 A11 A10 CS2
BLOCK DIAGRAM
512K x 8
512K x 8
A
0-18
OE
WE
CS
1
CS
2
I/O
0-7
(1) (1)
PIN CONFIGURATION FOR WS1M8-XDJX
AND WS1M8-XFX
A0-18 Address Inputs I/O0-7 Data Input/Output CS1-2 Chip Selects
OE Output Enable WE Write Enable VCC +5.0V Power
GND Ground
PIN DESCRIPTION
NOTE:
1. CS
1 and CS2 are used to select the lower and upper 512Kx8 of the device. CS1 and CS2 must not be enabled at the same time.
Organized as two banks of 512Kx8
Commercial, Industrial and Military Temperature Ranges
5 Volt Power Supply
Low Power CMOS
TTL Compatible Inputs and Outputs
PIN CONFIGURATION FOR WS1M8-XCX
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
A18 A16 A14 A12
A7 A6 A5 A4 A3 A2 A1
A0 I/O0 I/O1 I/O2
GND
V
CC
A15 A17 WE A13 A8 A9 A11 CS2 A10 CS1 I/O7 I/O6 I/O5 I/O4 I/O3
32 DIP
TOP VIEW
BLOCK DIAGRAM
512K x 8
512K x 8
A
0-18
WE
CS
1
CS
2
I/O
0-7
(1)
(1)
A0-18 Address Inputs I/O0-7 Data Input/Output CS1-2 Chip Selects
WE Write Enable VCC +5.0V Power
GND Ground
PIN DESCRIPTION
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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS1M8-XXX
TRUTH TABLEABSOLUTE MAXIMUM RATINGS
Parameter Symbol Min Max Unit
Operating Temperature T
A -55 +125 °C
Storage Temperature T
STG -65 +150 °C
Signal Voltage Relative to GND V
G -0.5 Vcc+0.5 V
Junction Temperature T
J 150 °C
Supply Voltage V
CC -0.5 7.0 V
CS OE WE Mode Data I/O Power
H X X Standby High Z Standby L L H Read Data Out Active L X L Write Data In Active L H H Out Disable High Z Active
NOTE: OE is internally tied to the GND and not accessible on the WS1M8-XCX.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition Max Unit
Input capacitance CIN
VIN = 0V, f = 1.0MHz
20 pF
Output capicitance C
OUT
V
OUT
= 0V, f = 1.0MHz
20 pF
This parameter is guaranteed by design but not tested.
Parameter Symbol Min Max Unit
Supply Voltage V
CC 4.5 5.5 V
Input High Voltage V
IH 2.2 VCC + 0.3 V
Input Low Voltage V
IL -0.3 +0.8 V
Operating Temp. (Mil.) T
A -55 +125 °C
CAPACITANCE
(TA = +25°C)
DC CHARACTERISTICS
(V
CC
= 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter Sym Conditions Units
Min Max
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA Output Leakage Current ILO1CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA Operating Supply Current ICC1CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 180 mA Standby Current ISB1CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 40 mA Output Low Voltage VOL IOL = 8mA 0.4 V Output High Voltage V
OH IOH = -4.0mA 2.4 V
Parameter Symbol Conditions Units
Min Typ Max
Data Retention Supply Voltage V
DR CS ≥ VCC -0.2V 2.0 5.5 V
Data Retention Current I
CCDR1 VCC = 3V 3.0 18.0* mA
LOW POWER DATA RETENTION CHARACTERISTICS (WS1M8L-XXX ONLY)
(TA = -55°C to +125°C)
NOTE: DC test conditions: VIH = VCC -0.3V , VIL = 0.3V
1. OE is internally tied to the GND and not accessible on the WS1M8-XCX.
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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS1M8-XXX
AC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter Symbol -17 -20 -25 -35 -45 -55 Units Read Cycle Min Max Min Max Min Max Min Max Min Max Min Max
Read Cycle Time tRC 17 20 25 35 45 55 ns Address Access Time tAA 17 20 25 35 45 55 ns Output Hold from Address Change tOH 000 000ns Chip Select Access Time tACS 17 20 25 35 45 55 ns Output Enable to Output Valid tOE
2
9 1012252525ns
Chip Select to Output in Low Z tCLZ
1
222 444ns
Output Enable to Output in Low Z t OLZ
2
000 000ns
Chip Disable to Output in High Z tCHZ
1
9 1012152020ns
Output Disable to Output in High Z t
OHZ
2
9 1012152020ns
1. This parameter is guaranteed by design but not tested.
2. OE is internally tied to the GND and not accessible on the WS1M8-XCX.
AC CHARACTERISTICS
(V
CC
= 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter Symbol -17 -20 -25 -35 -45 -55 Units Write Cycle Min Max Min Max Min Max Min Max Min Max Min Max
Write Cycle Time tWC 17 20 25 35 45 55 ns Chip Select to End of Write tCW 14 14 15 25 35 50 ns Address Valid to End of Write tAW 14 14 15 25 35 50 ns Data Valid to End of Write tDW 91010202525ns Write Pulse Width tWP 14 14 15 25 35 40 ns Address Setup Time tAS 0000 0 0ns Address Hold Time tAH 0000 5 5ns Output Active from End of Write tOW
1
2344 5 5ns
Write Enable to Output in High Z tWHZ
1
9 9 10 15 15 25 ns
Data Hold Time t
DH 0000 0 0ns
1. This parameter is guaranteed by design but not tested.
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V ≈ 1.5V (Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z is programmable from -2V to +7V.
I
OL & IOH programmable from 0 to 16mA.
Tester Impedance Z
0 = 75 Ω.
V
Z is typically the midpoint of VOH and VOL.
I
OL & IOH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter Typ Unit
Input Pulse Levels VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V
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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS1M8-XXX
WS32K32-XHX
TIMING WAVEFORM - READ CYCLE
WRITE CYCLE - CS CONTROLLED
WRITE CYCLE - WE CONTROLLED
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
ADDRESS
DATA I/O
READ CYCLE 2 (WE = V
IH
)
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
OHZ
t
RC
DATA VALID
HIGH IMPEDANCE
CS
OE
t
CHZ
ADDRESS
DATA I/O
READ CYCLE 1 (CS = OE = V
IL
, WE = VIH)
t
AA
t
OH
t
RC
DATA VALIDPREVIOUS DATA VALID
NOTE: OE is internally tied to the GND and not accessible on the WS1M8-XCX.
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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS1M8-XXX
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 100: 36 LEAD, CERAMIC SOJ
1.27 (0.050) TYP
23.37 (0.920) ± 0.25 (0.010)
PIN 1 IDENTIFIER
21.59 (0.850) TYP
11.3 (0.446)
± 0.2 (0.009)
0.43 (0.017) ± 0.05 (0.002)
4.76 (0.184) MAX
0.89 (0.035) Radius TYP
0.20 (0.008)
± 0.05 (0.002)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
PACKAGE 226: 36 LEAD, CERAMIC FLAT PACK
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
23.37 (0.920) ± 0.25 (0.010)
32.64 (1.285) TYP
12.95 (0.510)
± 0.13 (0.005)
3.8 (0.150) TYP
3.18 (0.125) MAX
0.127 (0.005) ± 0.05 (0.002)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
21.59 (0.850) TYP
38.1 (1.50) ± 0.4 (0.015)
12.7 (0.500) ± 0.5 (0.020)
5.1 (0.200) ± 0.25 (0.010)
0.43 (0.017) ± 0.05 (0.002)
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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS1M8-XXX
ORDERING INFORMATION
LEAD FINISH:
Blank = Gold plated leads A = Solder dip leads
DEVICE GRADE:
M= Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C
PACKAGE:
C = 32 pin Ceramic 0.600" DIP (Package 300) DJ = 36 Lead Ceramic SOJ (Package 100) F = 36 Lead Ceramic Flatpack (Package 226)
ACCESS TIME (ns)
IMPROVEMENT MARK:
Blank = Standard Power L = Low Power Data Retention
ORGANIZATION, two banks of 512K x 8
SRAM
WHITE ELECTRONIC DESIGNS CORP.
W S 1M8 X - XXX X X X
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
2.5 (0.100) TYP
1.27 (0.050)
± 0.1 (0.005)
0.46 (0.018)
± 0.05 (0.002)
0.99 (0.039)
± 0.51 (0.020)
3.2 (0.125) MIN
0.25 (0.010)
± 0.05 (0.002)
15.25 (0.600)
± 0.25 (0.010)
42.8 (1.686) MAX
5.13 (0.202) MAX
PIN 1 IDENTIFIER
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
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