Datasheet WS1M32-120G3MA, WS1M32-70G3CA, WS1M32-70G3C, WS1M32-85G3MA, WS1M32-85G3M Datasheet (White Electronic Designs)

4

SRAM MODULES

WS1M32-XG3X

1

White Electronic Designs Corporation • [phone] • www.whiteedc.com

12
13
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16
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24
25
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32

74
73
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70
69
68
67
66
65
64
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59
58
57
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55
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9

V

CC

A

0

A

1

A

2

A

3

A

4

A

5

A

6

OE

1

OE

2

OE

3

OE

4

NC

A

7

A

8

A

9

A

10

A

11

A

12

A

13

GND

V

CC

I/O0I/O1I/O2I/O3I/O4I/O5I/O6I/O

7

CS

1

NC

CS

2

I/O8I/O

9

I/O10I/O11I/O12I/O13I/O14I/O

15

GND

GND
NC
NC
NC
NC
NC
NC
NC
NC
WE

4

WE

3

WE

2

WE

1

NC
NC
A

18

A

17

A

16

A

15

A

14

V

CC

GND

I/O31I/O

3

0

I/O

2

9

I/O

2

8

I/O

2

7

I/O

2

6

I/O

2

5

I/O

2

4

NCNCNC

I/O

2

3

I/O22I/O21I/O

2

0

I/O

1

9

I/O

1

8

I/O

1

7

I/O

1

6

V

CC

876543 184838281807978772

37

38 39 40 41 42 43 45 46 47 48 49 50 51 52 5344

76 75

11

10

33

34 35 36

1Mx32 SRAM MODULE

PRELIMINARY*

FEATURES

■ Access Time of 70, 85, 100, 120ns

■ 84 lead, 28mm CQFP, (Package 511)

■ Organized as two banks of 512Kx32, User Configurable as

1Mx16 or 2Mx8

■ Commercial, Industrial and Military Temperature Ranges

PIN CONFIGURATION FOR WS1M32-XG3X

PIN DESCRIPTION

I/O0-31 Data Inputs/Outputs

A0-18 Address Inputs

WE1-4 Write Enables

CS1-2 Chip Selects

OE1-4 Output Enables

VCC Power Supply

GND Ground

NC Not Connected

TOP VIEW

■ TTL Compatible Inputs and Outputs

■ 5 Volt Power Supply

■ Low Power CMOS

■ Weight - 20 grams typical

*This data sheet describes a product under development, not fully

characterized, and is subject to change without notice.

May 2001 Rev. 2

BLOCK DIAGRAM

8

I/O

0-7

CS

1

I/O

8-15

CS

2

I/O

16-23

I/O

24-31

A

0-18

WE

1

8

2M x 8

8

512K x 8

8

512K x 8

2M x 8

512K x 8

512K x 8

2M x 8

512K x 8

512K x 8

2M x 8

512K x 8

512K x 8

OE

1

WE

2

OE

2

WE

3

OE

3

WE

4

OE

4

NOTE: CS1& CS2 are used as bank select

The White 84 lead G3 CQFP fills
the same fit and function as the
JEDEC 84 lead CQFJ or 84 PLCC.
But the G3 has the TCE and lead
inspection advantage of the
CQFP form.

1.146"

2

White Microelectronics • Phoenix, AZ • [phone]

4

SRAM MODULES

WS1M32-XG3X

TRUTH TABLE

CS1 CS2 OE WE Mode Data I/O Power

H H X X Standby High Z Standby
L H L H Read Data Out Active
L H H H Out Disable High Z Active
L H X L Write Data In Active
H L L H Read Data Out Active
H L H H Out Disable High Z Active
H L X L Write Data In Active
L L X X Invalid State Invalid State Invalid State

Parameter Symbol Min Max Unit

Operating Temperature T

A -40 +85 °C

Storage Temperature T

STG -65 +150 °C

Signal Voltage Relative to GND V

G -0.5 Vcc + 0.5 V

Junction Temperature T

J 150 °C

Supply Voltage V

CC -0.5 7.0 V

RECOMMENDED OPERATING CONDITIONS

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Min Max Unit

Supply Voltage VCC 4.5 5.5 V

Input High Voltage VIH 2.2 VCC + 0.3 V

Input Low Voltage VIL -0.5 +0.8 V

Operating Temp (Ind.) T

A -40 +85 °C

CAPACITANCE

(T

A = +25°C)

Parameter

Symbol

Conditions Max Unit

OE1-4 capacitance COE

VIN = 0 V, f = 1.0 MHz

30 pF

WE1-4 capacitance CWE

VIN = 0 V, f = 1.0 MHz

30 pF

CS1-2 capacitance CCS

VIN = 0 V, f = 1.0 MHz

30 pF

Data I/O capacitance CI/O

V

I/O

= 0 V, f = 1.0 MHz

30 pF

Address input capacitance C

ADVIN

= 0 V, f = 1.0 MHz

100 pF

This parameter is guaranteed by design but not tested.

Parameter Symbol Conditions Units

Min Max

Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA

Operating Supply Current x 32 Mode ICC x 32 CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 220 mA

Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 10 mA
Standby Current (Low Power) ISB2 CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 900 µA

Output Low Voltage VOL IOL = 8mA, Vcc = 4.5 0.4 V

Output High Voltage V

OH IOH = -4.0mA, Vcc = 4.5 2.4 V

NOTE: DC test conditions: V

IH = VCC -0.3V, VIL = 0.3V

DC CHARACTERISTICS

(V

CC

= 5.0V, GND = 0V, TA = -55°C to +125°C)

4

SRAM MODULES

WS1M32-XG3X

3

White Electronic Designs Corporation • [phone] • www.whiteedc.com

Parameter Symbol -70 -85 -100 -120 Units
Read Cycle Min Max Min Max Min Max Min Max

Read Cycle Time tRC 70 85 100 120 ns
Address Access Time tAA 70 85 100 120 ns
Output Hold from Address Change tOH 5555 ns
Chip Select Access Time tACS 70 85 100 120 ns
Output Enable to Output Valid tOE 35 40 50 60 ns
Chip Select to Output in Low Z tCLZ

1

10 10 10 10 ns

Output Enable to Output in Low Z tOLZ

1

5555 ns

Chip Disable to Output in High Z tCHZ

1

25 25 35 35 ns

Output Disable to Output in High Z t

OHZ

1

25 25 35 35 ns

1. This parameter is guaranteed by design but not tested.

AC CHARACTERISTICS

(V

CC

= 5.0V, GND = 0V, TA

= -55°C to +125°C)

AC TEST CIRCUIT

NOTES:

V

Z is programmable from -2V to +7V.

I

OL & IOH programmable from 0 to 16mA.

Tester Impedance Z

0 = 75 Ω.

V

Z is typically the midpoint of VOH and VOL.

I

OL & IOH

are adjusted to simulate a typical resistive load circuit.

ATE tester includes jig capacitance.

I

Current Source

D.U.T.

C = 50 pf

eff

I

OL

V ≈ 1.5V
(Bipolar Supply)

Z

Current Source

OH

AC CHARACTERISTICS

(V

CC

= 5.0V, GND = 0V, TA

= -55°C to +125°C)

AC TEST CONDITIONS

Parameter Typ Unit

Input Pulse Levels VIL = 0, VIH = 3.0 V

Input Rise and Fall 5 ns

Input and Output Reference Level 1.5 V

Output Timing Reference Level 1.5 V

Parameter Symbol -70 -85 -100 -120 Units
Write Cycle Min Max Min Max Min Max Min Max

Write Cycle Time tWC 70 85 100 120 ns
Chip Select to End of Write tCW 60 75 80 100 ns
Address Valid to End of Write tAW 60 75 80 100 ns
Data Valid to End of Write tDW 30 30 40 40 ns
Write Pulse Width tWP 50 50 60 60 ns
Address Setup Time tAS 0000 ns
Address Hold Time tAH 5555 ns
Output Active from End of Write tOW

1

5555 ns

Write Enable to Output in High Z tWHZ

1

25 25 35 35 ns

Data Hold Time t

DH 0000 ns

1. This parameter is guaranteed by design but not tested.

4

White Microelectronics • Phoenix, AZ • [phone]

4

SRAM MODULES

WS1M32-XG3X

WS32K32-XHX

TIMING WAVEFORM - READ CYCLE

WRITE CYCLE - CS CONTROLLED

WRITE CYCLE - WE CONTROLLED

ADDRESS

DATA I/O

WRITE CYCLE 2, CS CONTROLLED

t

AW

t

AS

t

CW

t

AH

t

WP

t

DH

t

DW

t

WC

CS

WE

DATA VALID

ADDRESS

DATA I/O

READ CYCLE 2 (WE = V

IH

)

t

AA

t

ACS

t

OE

t

CLZ

t

OLZ

t

OHZ

t

RC

DATA VALID

HIGH IMPEDANCE

CS

OE

t

CHZ

ADDRESS

DATA I/O

READ CYCLE 1 (CS = OE = V

IL

, WE = VIH)

t

AA

t

OH

t

RC

DATA VALIDPREVIOUS DATA VALID

ADDRESS

DATA I/O

WRITE CYCLE 1, WE CONTROLLED

t

AW

t

CW

t

AH

t

WP

t

DW

t

WHZ

t

AS

t

OW

t

DH

t

WC

DATA VALID

CS

WE

4

SRAM MODULES

WS1M32-XG3X

5

White Electronic Designs Corporation • [phone] • www.whiteedc.com

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

PACKAGE 511: 84 LEAD, CERAMIC QUAD FLAT PACK (G3)

0.38 (0.015)

± 0.05 (0.002)

4.12 (0.162) ± 0.20 (0.008)

1.27 (0.050) TYP

29.11 (1.146)
± 0.25 (0.010)

25.40 (1.000) TYP

4.29 (0.169)
± 0.28 (0.011)

0.19 (0.008)
± 0.06 (0.003)

1.02 (0.040)

± 0.12 (0.005)

0.25 (0.010)

± 0.03 (0.002)

1° / 7°

R 0.127
(0.005) MIN

DETAIL A

SEE DETAIL "A"

Pin 1

0.27 (0.011)

± 0.04 (0.001)

+

30.23 (1.190) ± 0.25 (0.010) SQ

27.18 (1.070) ± 0.25 (0.010) SQ

The White 84 lead G3 CQFP fills
the same fit and function as the
JEDEC 84 lead CQFJ or 84 PLCC.
But the G3 has the TCE and lead
inspection advantage of the
CQFP form.

1.146"

6

White Microelectronics • Phoenix, AZ • [phone]

4

SRAM MODULES

WS1M32-XG3X

ORDERING INFORMATION

LEAD FINISH:

Blank = Gold plated leads
A = Solder dip leads

DEVICE GRADE:

M= Military Screened -55°C to +125°C
I = Industrial -40°C to +85°C
C = Commercial 0 to +70°C

PACKAGE TYPE:

G3 = 28 mm CQFP (Package 511)

ACCESS TIME (ns)

ORGANIZATION, two banks of 512Kx32

User configurable as 1Mx16 or 2Mx8

SRAM

WHITE ELECTRONIC DESIGNS

W S 1M32 - XXX G3 X X