Datasheet WS128K64V-25G4WM, WS128K64V-25G4WI, WS128K64V-25G4WC, WS128K64V-20G4WM, WS128K64V-20G4WI Datasheet (White Electronic Designs)

WS128K64V-XG4WX

128Kx64 3.3V SRAM MODULE

ADVANCED*

FEATURES

■ Access Times of 15, 17, 20, 25ns

■ Packaging

•116 lead, 40mm square, Hermetic CQFP (Package 504)

■ Organized as 128Kx64, User Configurable as 256Kx32,

512Kx16 or 1Mx8.

■ Commercial, Industrial and Military Temperature Ranges

■ 3 Volt Power Supply

■ Low Power CMOS

FIG. 1 PIN CONFIGURATION FOR WF128K64V-XG4WX

TOP VIEW

I/O
I/O
I/O
I/O
I/O

GND

I/O

I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O

I/O2I/O1I/O0VCCWE2CS2NC

1514131211

16

3

17

4

18

5

19

6

20

7

21
22

8

23

9

24

10

25

11

26

12

27

13

28

14

29

15

30
31

16

32

17

33

18

34

19

35

20

36

21

37

22

38

23

39
40

24

41

25

42

26

43

27

44

28

4546474849505152535455565758596061626364656667686970717273

A0A1A2A3A4WE1CS1NC

987654321

10

CS8WE8A5A6A7A8A9NC

116

115

114

113

112

111

110

109

CS7WE7VCCI/O63I/O62I/O

108

107

106

105

104

102
101
100

61

103

99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74

■ 2V Data Retention Devices Available (Low Power Version)

■ TTL Compatible Inputs and Outputs

■ Built in Decoupling Caps and Multiple Ground Pins for Low

Noise Operation

■ Weight

WF128K64V-XG4WX - 20 grams typical

* This data sheet describes a product that may or may not be under

development and is subject to change or cancellation without notice.
Note: Programming information available upon request.

BLOCK DIAGRAM

A

I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O

0-16

60
59
58
57
56

55
54
53
52
51
50
49
48

47
46
45
44
43
42
41
40

39
38
37
36
35

WE

1

128K x 8

8

I/O

0-7

1

OE

WE

CS

1

2

128K x 8

8

I/O

8-15

CS

2

2

PIN DESCRIPTION

I/O0-63 Data Inputs/Outputs

A0-16 Address Inputs

WE1-8 Write Enables

CS1-8 Chip Selects

OE Output Enable

VCC Power Supply

GND Ground

NC Not Connected

WE

CS

x

......

8

I/O...

WE

8

128K x 8

8

I/O

56-63

8

CS

x

8

September 1998

I/O29I/O30I/O

3

3

31

CC

NCNCNC

CS

V

WE

NC

16A15

A

4

WE

4

CS

OE

5WE5

CS

A14A13A12A11A

6

6

10

NC

CS

WE

CC

V

I/O32I/O33I/O

1

34

White Microelectronics • Phoenix, AZ • [phone]

Parameter Symbol Min Max Unit

Operating Temperature T
Storage Temperature T
Signal Voltage Relative to GND V
Junction Temperature T
Supply Voltage V

A -55 +125 °C

STG -65 +150 °C

G -0.5 4.6 V
J 150 °C

CC -0.5 4.6 V

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Min Max Unit

Supply Voltage V
Input High Voltage V
Input Low Voltage V
Operating Temp. (Mil.) T

CC 3.0 3.6 V
IH 2.2 VCC + 0.3 V

IL -0.3 +0.8 V
A -55 +125 °C

DC CHARACTERISTICS

(VCC = 3.3V ± 0.3V, TA = -55°C to +125°C)

WS128K64V-XG4WX

TRUTH TABLEABSOLUTE MAXIMUM RATINGS

CS OE WE Mode Data I/O Power

H X X Standby High Z Standby
L L H Read Data Out Active
L X L Write Data In Active
L H H Out Disable High Z Active

CAPACITANCE

A = +25°C)

(T

Parameter

OE capacitance COE
WE capacitance CWE
CS capacitance CCS
Data I/O capacitance CI/O
Address input capacitance C

This parameter is guaranteed by design but not tested.

Symbol

ADVIN

Conditions Max Unit

VIN = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
V

I/O

= 0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz

100 pF

20 pF
20 pF
20 pF

100 pF

Parameter Sym Conditions Units

Min Max

Input Leakage Current ILI VIN = GND to VCC 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA
Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 3.6 1 A
Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 3.6 64 mA
Output Low Voltage VOL IOL = 8mA 0.4 V
Output High Voltage V

NOTE: DC test conditions: V

IH = VCC -0.3V, VIL = 0.3V

FIG. 2

AC TEST CIRCUIT

Current Source

OH IOH = -4.0mA 2.4 V

AC TEST CONDITIONS

I

OL

Parameter Typ Unit

Input Pulse Levels VIL = 0, VIH = 2.5 V
Input Rise and Fall 5 ns
Input and Output Reference Level 1.5 V

D.U.T.

C = 50 pf

eff

Current Source

I

OH

V ≈ 1.5V

Z

(Bipolar Supply)

Output Timing Reference Level 1.5 V

NOTES:

V

Z is programmable from -2V to +7V.

OL & IOH programmable from 0 to 16mA.

I
Tester Impedance Z
V

Z is typically the midpoint of VOH and VOL.

OL & IOH

are adjusted to simulate a typical resistive load circuit.

I
ATE tester includes jig capacitance.

0 = 75 Ω.

White Microelectronics • Phoenix, AZ • [phone]

2

WS128K64V-XG4WX

AC CHARACTERISTICS

(VCC = 3.3V ± 0.3V, TA = -55°C To +125°C)

Parameter Symbol -15 -17 -20 -25 Units
Read Cycle Min Max Min Max Min Max

Read Cycle Time tRC 15 17 20 25 ns
Address Access Time tAA 15 17 20 25 ns
Output Hold from Address Change tOH 00 00ns
Chip Select Access Time tACS 15 17 20 25 ns
Output Enable to Output Valid tOE 10 10 12 15 ns
Chip Select to Output in Low Z tCLZ
Output Enable to Output in Low Z tOLZ
Chip Disable to Output in High Z tCHZ
Output Disable to Output in High Z t

1. This parameter is guaranteed by design but not tested.

Parameter Symbol -15 -17 -20 -25 Units
Write Cycle Min Max Min Max Min Max Min Max

Write Cycle Time tWC 15 17 20 25 ns
Chip Select to End of Write tCW 14 14 15 20 ns
Address Valid to End of Write tAW 14 14 15 20 ns
Data Valid to End of Write tDW 10 10 12 15 ns
Write Pulse Width tWP 14 14 15 20 ns
Address Setup Time tAS 0 000ns
Address Hold Time tAH 0 000ns
Output Active from End of Write tOW
Write Enable to Output in High Z tWHZ
Data Hold Time t

1. This parameter is guaranteed by design but not tested.

1

33 33ns

1

00 00ns

OHZ

1

1

10 10 12 12 ns
10 10 12 12 ns

AC CHARACTERISTICS

(V

CC

= 3.3V ± 0.3V, TA = -55°C To +125°C)

1

3 333ns

1

DH 0 000ns

10 10 12 15 ns

3

White Microelectronics • Phoenix, AZ • [phone]

FIG. 3

TIMING WAVEFORM - READ CYCLE

t

ADDRESS

t

DATA I/O

RC

t

AA

OH

WS128K64V-XG4WX

t

t
t

t

ACS
CLZ

RC

AA

t

CHZ

t

OE

t

OLZ

DATA VALID

t

OHZ

ADDRESS

CS

OE

DATA VALIDPREVIOUS DATA VALID

DATA I/O

HIGH IMPEDANCE

READ CYCLE 1 (CS = OE = V

FIG. 4

WRITE CYCLE - WE CONTROLLED

ADDRESS

CS

WE

DATA I/O

FIG. 5

WRITE CYCLE - CS CONTROLLED

ADDRESS

CS

, WE = VIH)

IL

t

WC

t

AW

t

CW

t

AS

WRITE CYCLE 1, WE CONTROLLED

t

WHZ

t

WP

t

WC

WS32K32-XHX

t

t

AS

AW

t

CW

t

DW

DATA VALID

READ CYCLE 2 (WE = V

t

AH

t

OW

t

DH

t

AH

)

IH

White Microelectronics • Phoenix, AZ • [phone]

WE

DATA I/O

t

WP

WRITE CYCLE 2, CS CONTROLLED

4

t

DW

DATA VALID

t

DH

WS128K64V-XG4WX

PACKAGE 504: 116 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G4W)

39.6 (1.56) ± 0.38 (0.015) SQ

PIN 1 IDENTIFIER

Pin 1

12.7 (0.500)
± 0.5 (0.020)

4 PLACES

5.1 (0.200)

± 0.25 (0.010)

4 PLACES

4 PLACES

0.38 (0.015)

± 0.08 (0.003)

68 PLACES

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

ORDERING INFORMATION

1.27 (0.050)
REF

38 (1.50) REF

5.1 (0.200) MAX

1.27 (0.050)
± 0.1 (0.005)

0.25 (0.010)

± 0.05 (0.002)

W S 128K64 V - XXX G4W X

DEVICE GRADE:

M= Military Screened -55°C to +125°C
I = Industrial -40°C to +85°C
C = Commercial 0°C to + 70°C

PACKAGE TYPE:

G4W = 116 Lead 40mm Ceramic Quad Flat Pack, CQFP (Package 504)

ACCESS TIME (ns)

Low Voltage Supply 3.3V

± 10%

ORGANIZATION, 128K x 64

User configurable as 256K x 32, 512K x 16 and 1M x 8

SRAM

WHITE MICROELECTRONICS

5

White Microelectronics • Phoenix, AZ • [phone]