Datasheet WS128K48-35G4WMA, WS128K48-35G4WM, WS128K48-35G4WIA, WS128K48-35G4WI, WS128K48-35G4WCA Datasheet (White Electronic Designs)

White Microelectronics • Phoenix, AZ • [phone]

1

WS128K48-XG4WX

128Kx48 SRAM MODULE

ADVANCED*

May 1997

FEATURES

■ Access Times 17, 20, 25, 35ns

■ Packaging:

•116 Lead, 40.0mm Hermetic CQFP (Package 504)

■ Commercial, Industrial and Military Temperature Ranges

■ 5 Volt Power Supply

■ Low Power CMOS

■ Organized as 128K x 48, Data Width is user configurable.

■ 2V Data Retention Devices Available

(Low Power Version)

■ TTL Compatible Inputs and Outputs

■ Weight

WS128K48-XG4WX - 20 grams typical

* This data sheet describes a product that may or may not be under

development and is subject to change or cancellation without notice.

PIN CONFIGURATION FOR WS128K48-XG4WX

1

128K x 8

8

I/O

0-7

CS

1

2

128K x 8

8

I/O

8-15

CS

2

8

I/O...

CS

x

6

128K x 8

8

I/O

40-47

CS

6

A

0-16

OE

WE

1

WE

2

WE

x

WE

6

.....

BLOCK DIAGRAM

16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44

1514131211

10

987654321

116

115

114

113

112

111

110

109

108

107

106

105

104

103

I/O3
I/O4
I/O5
I/O6
I/O7

GND

I/O

8

I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
GND
I/O

16

I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O

24

I/O25
I/O26
I/O27
I/O28

I/O29

I/O30

I/O31

VCC

WE3

CS3

NCNCNC

NC

A

16

A15

WE4

CS4OECS5

WE5

A14

A13

A12

A11

A10

NC

CS

6

WE6

VCC

I/O32

I/O33

I/O34

NC
NC
NC
NC
NC
GND
NC
NC
NC
NC
NC
NC
NC
NC
GND
I/O

47

I/O46
I/O45
I/O44
I/O43
I/O42
I/O41
I/O40
GND
I/O

39

I/O38
I/O37
I/O36
I/O35

I/O2

I/O1

I/O0

VCC

WE2CS2NCA0A1A2A3A4WE1

CS1NCNCNCA5A6A7A8A9NCNCNC

VCCNCNCNC

4546474849505152535455565758596061626364656667686970717273

102
101
100

99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74

TOP VIEW

I/O0-47 Data Inputs/Outputs

A0-16 Address Inputs

WE1-6 Write Enables

CS1-6 Chip Selects

OE Output Enable

VCC Power Supply

GND Ground

NC Not Connected

PIN DESCRIPTION

2

White Microelectronics • Phoenix, AZ • [phone]

WS128K48-XG4WX

TRUTH TABLEABSOLUTE MAXIMUM RATINGS

Parameter Symbol Min Max Unit

Operating Temperature T

A -55 +125 °C

Storage Temperature T

STG -65 +150 °C

Signal Voltage Relative to GND V

G -0.5 Vcc+0.5 V

Junction Temperature T

J 150 °C

Supply Voltage V

CC -0.5 7.0 V

CS OE WE Mode Data I/O Power

H X X Standby High Z Standby
L L H Read Data Out Active
L X L Write Data In Active
L H H Out Disable High Z Active

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Min Max Unit

Supply Voltage V

CC 4.5 5.5 V

Input High Voltage V

IH 2.2 VCC + 0.3 V

Input Low Voltage V

IL -0.3 +0.8 V

Operating Temp. (Mil.) T

A -55 +125 °C

DC CHARACTERISTICS

(VCC = 5.0V, TA = -55°C to +125°C)

I

Current Source

D.U.T.

C = 50 pf

eff

I

OL

V ≈ 1.5V
(Bipolar Supply)

Z

Current Source

OH

NOTES:

V

Z is programmable from -2V to +7V.

I

OL & IOH programmable from 0 to 16mA.

Tester Impedance Z

0 = 75 Ω.

V

Z is typically the midpoint of VOH and VOL.

I

OL & IOH

are adjusted to simulate a typical resistive load circuit.

ATE tester includes jig capacitance.

AC TEST CIRCUIT

AC TEST CONDITIONS

Parameter Typ Unit

Input Pulse Levels VIL = 0, VIH = 3.0 V
Input Rise and Fall 5 ns
Input and Output Reference Level 1.5 V
Output Timing Reference Level 1.5 V

Parameter Sym Conditions -17 -20 -25 -35 Units

Min Max Min Max Min Max Min Max

Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 10 10 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 10 µA
Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 720 720 720 720 mA
Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 120 120 90 90 mA
Output Low Voltage VOL IOL = 8mA, VCC = 4.5 0.4 0.4 0.4 0.4 V
Output High Voltage V

OH IOH = -4.0mA, VCC = 4.5 2.4 2.4 2.4 2.4 V

NOTE: DC test conditions: V

IH = VCC -0.3V, VIL = 0.3V

CAPACITANCE

(T

A = +25°C)

Parameter

Symbol

Conditions Max Unit

OE capacitance COE

VIN = 0 V, f = 1.0 MHz

100 pF

WE capacitance CWE

VIN = 0 V, f = 1.0 MHz

20 pF

CS capacitance CCS

VIN = 0 V, f = 1.0 MHz

20 pF

Data I/O capacitance CI/O

V

I/O

= 0 V, f = 1.0 MHz

20 pF

Address input capacitance C

AD

V

IN

= 0 V, f = 1.0 MHz

100 pF

This parameter is guaranteed by design but not tested.

White Microelectronics • Phoenix, AZ • [phone]

3

WS128K48-XG4WX

Parameter Symbol -17 -20 -25 -35 Units
Read Cycle Min Max Min Max Min Max

Read Cycle Time tRC 17 20 25 35 ns
Address Access Time tAA 17 20 25 35 ns
Output Hold from Address Change tOH 00 00ns
Chip Select Access Time tACS 17 20 25 35 ns
Output Enable to Output Valid tOE 10 12 15 20 ns
Chip Select to Output in Low Z tCLZ

1

33 33ns

Output Enable to Output in Low Z tOLZ

1

00 00ns

Chip Disable to Output in High Z tCHZ

1

10 12 12 20 ns

Output Disable to Output in High Z t

OHZ

1

10 12 12 20 ns

1. This parameter is guaranteed by design but not tested.

AC CHARACTERISTICS

(VCC = 5.0V, TA = -55°C To +125°C)

AC CHARACTERISTICS

(V

CC

= 5.0V, TA = -55°C To +125°C)

Parameter Symbol -17 -20 -25 -35 Units
Write Cycle Min Max Min Max Min Max Min Max

Write Cycle Time tWC 17 20 25 35 ns
Chip Select to End of Write tCW 14 15 20 25 ns
Address Valid to End of Write tAW 15 15 20 25 ns
Data Valid to End of Write tDW 10 12 15 20 ns
Write Pulse Width tWP 14 15 20 25 ns
Address Setup Time tAS 0 000ns
Address Hold Time tAH 0 000ns
Output Active from End of Write tOW

1

3 334ns

Write Enable to Output in High Z tWHZ

1

10 12 15 20 ns

Data Hold Time t

DH 0 000ns

1. This parameter is guaranteed by design but not tested.

4

White Microelectronics • Phoenix, AZ • [phone]

WS128K48-XG4WX

WS32K32-XHX

TIMING WAVEFORM - READ CYCLE

WRITE CYCLE - CS CONTROLLED

WRITE CYCLE - WE CONTROLLED

ADDRESS

DATA I/O

WRITE CYCLE 1, WE CONTROLLED

t

AW

t

CW

t

AH

t

WP

t

DW

t

WHZ

t

AS

t

OW

t

DH

t

WC

DATA VALID

CS

WE

ADDRESS

DATA I/O

WRITE CYCLE 2, CS CONTROLLED

t

AW

t

AS

t

CW

t

AH

t

WP

t

DH

t

DW

t

WC

CS

WE

DATA VALID

ADDRESS

DATA I/O

READ CYCLE 2 (WE = V

IH

)

t

AA

t

ACS

t

OE

t

CLZ

t

OLZ

t

OHZ

t

RC

DATA VALID

HIGH IMPEDANCE

CS

OE

t

CHZ

ADDRESS

DATA I/O

READ CYCLE 1 (CS = OE = V

IL

, WE = VIH)

t

AA

t

OH

t

RC

DATA VALIDPREVIOUS DATA VALID

White Microelectronics • Phoenix, AZ • [phone]

5

WS128K48-XG4WX

LEAD FINISH:

Blank = Gold plated leads
A = Solder dip leads

DEVICE GRADE:

M= Military Screened -55°C to +125°C
I = Industrial -40°C to +85°C
C = Commercial 0°C to + 70°C

PACKAGE TYPE:

G4W = 116 Lead 40mm Ceramic Quad Flat Pack, CQFP (Package 504)

ACCESS TIME (ns)

ORGANIZATION, 128K x 48

SRAM

WHITE MICROELECTRONICS

ORDERING INFORMATION

PACKAGE 504: 116 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G4W)

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

38 (1.50) REF

4 PLACES

0.38 (0.015)

± 0.08 (0.003)

68 PLACES

1.27 (0.050)
REF

5.1 (0.200)

± 0.25 (0.010)

4 PLACES

39.6 (1.56) ± 0.38 (0.015) SQ

12.7 (0.500)
± 0.5 (0.020)

4 PLACES

5.1 (0.200) MAX

0.25 (0.010)

± 0.05 (0.002)

1.27 (0.050)
± 0.1 (0.005)

PIN 1 IDENTIFIER

Pin 1

W S 128K48 - XXX G4W X X