Datasheet WPT 225-12, WPH 225-12, WPT 225-14, WPH 225-14, WPT 225-16 Datasheet (Westcode Semiconductors)

WESTCODE

SEMICONDUCTORS

Thyristor Modules Thyristor/Diode Modules

V

RSM

V

DSM

VV

1300 1200 WPT 225-12 WPH 225-12 1500 1400 WPT 225-14 WPH 225-14 1700 1600 WPT 225-16 WPH 225-16 1900 1800 WPT 225-18 WPH 225-18

Symbol Test Conditions Maximum Ratings I

TRMS

I

TAVM

, I

I

TSM

FSM

2

∫∫

dt TVJ = 45°C t = 10 ms (50 Hz) 320 000 A2s

∫i

∫∫

(di/dt)

cr

(dv/dt)

cr

P

GM

P

GAV

V

RGM

T

VJ

T

VJM

T

stg

V

ISOL

M

d

Weight Typical including screws 750 g

V

RRM

V

DRM

TVJ = T

VJM

TC = 85°C; 180° sine 221 A

Type

400 A

TVJ = 45°C; t = 10 ms (50 Hz) 8000 A VR = 0 t = 8.3 ms (60 Hz) 8500 A

= T

T

VJ

VJM

VR = 0 t = 8.3 ms (60 Hz) 7700 A

t = 10 ms (50 Hz) 7000 A

VR = 0 t = 8.3 ms (60 Hz) 300 000 A2s

= T

T

VJ

VJM

VR = 0 t = 8.3 ms (60 Hz) 246 000 A2s TVJ = T

VJM

f =50 Hz, tP =200 µs VD = 2/3 V IG = 1 A, non repetitive, IT = I

DRM

diG/dt = 1 A/µs TVJ = T

RGK = ∞; method 1 (linear voltage rise) TVJ = T

I

= I

T

; VDR = 2/3 V

VJM

TAVM

t = 10 ms (50 Hz) 245 000 A2s

repetitive, IT = 750 A 100 A/µs

TAVM

DRM

500 A/µs

1000 V/µs

tP = 30 µs 120 W tP = 500 µs60W

20 W 10 V

-40...+130 °C 130 °C

-40...+125 °C

50/60 Hz, RMS t = 1 min 3000 V~ I

≤ 1 mA t = 1 s 3600 V~

ISOL

Mounting torque (M6) 4.5-7/40-62 Nm/lb.in. Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.

I

TRMS

I

TAVM

V

RRM

= 2 x 400 A = 2 x 221 A = 1200 - 1800 V

3

2

1

3 6 7 1 5 4 2

WPT 225

3 1 5 4 2

WPH 225

Features

●

International standard package

●

Direct copper bonded Al2O3-ceramic with copper base plate

●

Planar passivated chips

●

Isolation voltage 3600 V~

●

Keyed gate/cathode twin pins

Applications

●

Motor control, softstarter

●

Power converter

●

Heat and temperature control for industrial furnaces and chemical processes

●

Lighting control

●

Solid state switches

Advantages

●

Simple mounting

●

Improved temperature and power cycling

●

Reduced protection circuits

7

6

5

4

Symbol Test Conditions Characteristic Values

, I

I

RRM

DRM

, V

V

T

F

V

T0

r

T

V

GT

I

GT

V

GD

I

GD

I

L

I

H

t

gd

t

q

Q

S

I

RM

R

thJC

R

thJK

d

S

d

A

a Maximum allowable acceleration 50 m/s

TVJ= T

; VR = V

VJM

RRM

; VD = V

DRM

40 mA IT, IF = 600 A; TVJ = 25°C 1.40 V For power-loss calculations only (TVJ = 130°C) 0.8 V

0.76 mΩ

VD = 6 V; TVJ = 25°C2V

TVJ = -40°C3V

VD = 6 V; TVJ = 25°C 150 mA

TVJ = -40°C 220 mA

TVJ = T TVJ = T

;V

VJM

;V

VJM

D D

= 2/3 V = 2/3 V

DRM DRM

0.25 V 10 mA

TVJ = 25°C; tP = 30 µs; VD = 6 V 200 mA IG = 0.45 A; diG/dt = 0.45 A/µs

TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA TVJ = 25°C; VD = 1/2 V

IG = 1 A; diG/dt = 1 A/µs TVJ = T

VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 V

; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. 200 µs

VJM

DRM

2 µs

TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/µs 550 µC

235 A

per thyristor (diode); DC current 0.157 K/W per module other values 0.08 K/W per thyristor (diode); DC current see Fig. 8/9 0.197 K/W per module 0.1 K/W

Creeping distance on surface 12.7 mm Creepage distance in air 9.6 mm

10

1: IGT, T

1: IGT, T 2: I

2: I

V

3: I

V

G

1

0.1

-3

10

GT

GT GT

GT

IGD, T

, T

, T , T

, T

VJ

10

= 140°C

= 130°C

VJ

= 25°C

VJ

= -40°C

VJ

1

= 140°C

= 130°C

-2

2

-1

10

Fig. 1 Gate trigger characteristics

100

s

µ

t

gd

typ.

10

2

3

Limit

6

5

4

4: P

= 20 W

4: P

= 20 W

GM

= 60 W

5: P

GM

= 120 W

6: P

GM

0

1

0

10

I

G

T

= 25°C

T

= 25°C

VJ

2

1

2

10

A

Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type U9911 UL 758, style 1385,

CSA class 5851, guide 460-1-1

Dimensions in mm (1 mm = 0.0394") WPT 225 WPH 225

M8x20

1

0.01 0.1 1 10

0.01 0.1 1 10 I

I

G

Fig. 2 Gate trigger delay time

A

I2dt

10

A2s

6

TVJ = 45°C

I

TAVM

I

FAVM

400

300

A

DC 180° sin 120° 60° 30°

8000

I

TSM

A

6000

50 Hz 80 % V

RRM

TVJ = 45°C T

= 130°C

VJ

4000

2000

0

0.001 0.01 0.1 1

Fig. 3 Surge overload current

I

, I

: Crest value, t: duration

TSM

FSM

400

P

tot

W

300

200

100

s

DC 180° sin 120° 60° 30°

5

10

TVJ = 130°C

200

100

4

10

t

110

ms

t

0

0 255075100125150

°C

T

C

Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current

at case temperature

R

0.1

0.2

0.3

0.4

0.6

0.8

1.0

thKA

K/W

Fig. 5 Power dissipation versus on-

state current and ambient temperature (per thyristor or diode)

P

2000

tot

1500

1000

W

500

0

I

TAVM/IFAVM

0 25 50 75 100 125 1500 100 200 300

A°C

T

A

R

thKA

0.03

0.05

0.08

K/W

Fig. 6 Three phase rectifier bridge:

Power dissipation versus direct output current and ambient temperature

0.1

0.15

0.2

0.3

Circuit B6 3xWPT225 3xWPH225

0

I

A

dAVM

0 2550751001251500 200 400 600

°C

T

A

2000

P

tot

W

R

K/W

thKA

0.03

1500

0.05

0.08

Fig. 7 Three phase AC-controller:

Power dissipation versus RMS output current and ambient temperature

0.1

0.15

0.2

1000

500

Circuit W3 3xWPT225 or 3xWPH225

0.3

0

0.25

K/W

Z

thJC

0.20

0.15

0 25 50 75 100 125 1500 100 200 300 400

A

I

RMS

°C

T

A

Fig. 8 Transient thermal impedance junction

to case (per thyristor or diode)

R

for various conduction angles d:

thJC

d R

thJC

(K/W)

DC 0.157

180° 0.168 120° 0.177

60° 0.200 30° 0.243

Constants for Z

iR

thJC

thi

calculation:

(K/W) ti (s)

0.10

0.05

30° 60° 120° 180° DC

1 0.0076 0.00054

0.00

-3

10

0.30 K/W

0.25

Z

thJK

0.20

-2

10

-1

10

0

10

1

10

s t

2

10

2 0.0406 0.098 3 0.0944 0.54 4 0.0147 12

Fig. 9 Transient thermal impedance junction

to heatsink (per thyristor or diode)

R

for various conduction angles d:

thJK

d R

thJK

(K/W)

DC 0.197

180° 0.208

0.15

0.10

0.05

30° 60° 120° 180° DC

120° 0.217

60° 0.240 30° 0.283

Constants for Z

iR

calculation:

thJK

(K/W) ti (s)

thi

1 0.0076 0.00054 2 0.0406 0.098

0.00

-3

10

-2

10

-1

10

0

10

1

10

s

t

2

10

3 0.0944 0.54 4 0.0147 12 5 0.04 12

UK : Westcode Semiconductors Ltd

P .O. Box 97, Chippenham, Wiltshire, England SN15 1JL

WESTCODE

T el : +44 (0)1249 444524 Fax : +44 (0)1249 659448

E-Mail : [email protected]

SEMICONDUCTORS

USA : Westcode Semiconductors Inc

3270 Cherry Avenue Long Beach, California 90807

WWW: http//www .westcode.com

In the interest of Product improvement Westcode reserves the right to change specifications at any time without notice. © Westcode Semiconductors Ltd

T el : 562 595 6971 Fax : 562 595 8182