Datasheet WPT 162-08, WPH 162-08, WPT 162-12, WPH 162-12, WPT 162-14 Datasheet (Westcode Semiconductors)
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WESTCODE
SEMICONDUCTORS
Thyristor Modules
Thyristor/Diode Modules
V
RSM
V
DSM
VV
900 800 WPT 162-08 WPH 162-08
1300 1200 WPT 162-12 WPH 162-12
1500 1400 WPT 162-14 WPH 162-14
1700 1600 WPT 162-16 WPH 162-16
1900 1800 WPT 162-18 WPH 162-18
Symbol Test Conditions Maximum Ratings
I
TRMS
I
TAVM
I
TSM
∫∫
∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 180 000 A2s
∫∫
(di/dt)
(dv/dt)
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight Typical including screws 125 g
V
RRM
V
DRM
, I
FRMS
, I
FAVM
, I
FSM
Type
TVJ = T
VJM
TC = 80°C; 180° sine 190 A
300 A
TC = 85°C; 180° sine 181 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 6000 A
VR = 0 t = 8.3 ms (60 Hz), sine 6400 A
TVJ = T
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 5600 A
t = 10 ms (50 Hz), sine 5250 A
VR = 0 t = 8.3 ms (60 Hz), sine 170 000 A2s
TVJ = T
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 128 000 A2s
cr
TVJ = T
VJM
f =50 Hz, tP =200 µs
VD = 2/3 V
IG = 0.5 A non repetitive, IT = 500 A 500 A/µs
DRM
t = 10 ms (50 Hz), sine 137 000 A2s
repetitive, IT = 500 A 1 50 A/µs
diG/dt = 0.5 A/µs
TVJ = T
cr
RGK = ∞; method 1 (linear voltage rise)
TVJ = T
= I
I
T
;V
VJM
VJM
TAVM
tP = 30 µs 120 W
tP = 500 µs60W
= 2/3 V
DR
DRM
1000 V/µs
8W
10 V
-40...+125 °C
125 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 3000 V~
≤ 1 mA t = 1 s 3600 V~
I
ISOL
Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M6) 4.5-5.5/40-48 Nm/lb.in.
I
TRMS
I
TAVM
V
RRM
= 2 x 300 A
= 2 x 190 A
= 800 - 1800 V
6
3
2
1
WPT 162
1 5 4 2
3
WPH 162
Features
●
International standard package
●
Direct copper bonded Al2O3 -ceramic
base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
Keyed gate/cathode twin pins
Applications
●
Motor control
●
Power converter
●
Heat and temperature control for
industrial furnaces and chemical
processes
●
Lighting control
●
Contactless switches
Advantages
●
Space and weight savings
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
7
4
5
5 4 236 7 1
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Symbol Test Conditions Characteristic Values
, I
I
RRM
DRM
, V
V
T
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a Maximum allowable acceleration 50 m/s
TVJ= T
; VR = V
VJM
RRM
; VD = V
DRM
10 mA
IT, IF = 300 A; TVJ = 25°C 1.25 V
For power-loss calculations only (TVJ = 125°C) 0.88 V
1.15 mΩ
VD = 6 V; TVJ = 25°C 2.5 V
TVJ = -40°C 2.6 V
VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 200 mA
TVJ = T
;V
VJM
D
= 2/3 V
DRM
0.2 V
10 mA
TVJ = 25°C; tP = 30 µs; VD = 6 V 300 mA
IG = 0.5 A; diG/dt = 0.5 A/µs
TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA
TVJ = 25°C; VD = 1/2 V
IG = 0.5 A; diG/dt = 0.5 A/µs
TVJ = T
VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 V
TVJ = T
; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. 150 µs
VJM
; IT, IF = 300 A, -di/dt = 50 A/µs 550 µC
VJM
DRM
DRM
2 µs
235 A
per thyristor/diode; DC current 0.155 K/W
per module other values 0.0775 K/W
per thyristor/diode; DC current see Fig. 8/9 0.225 K/W
per module 0.1125 K/W
Creepage distance on surface 12.7 m m
Strike distance through air 9.6 mm
Fig. 1 Gate trigger characteristics
2
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type U9911 UL 758, style 1385,
CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
WPT 162 WPH 162
Fig. 2 Gate trigger delay time
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Fig. 3 Surge overload current
I
, I
: Crest value, t: duration
TSM
FSM
Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Circuit
B6
3 x WPT 162 or
3 x WPH 162
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Circuit
W 3
3 x WPT 162 or
3 x WPH 162
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance junction
to case (per thyristor or diode)
R
for various conduction angles d:
thJC
d R
DC 0.155
180° 0.167
120° 0.176
60° 0.197
30° 0.227
thJC
(K/W)
Constants for Z
iR
1 0.0072 0.001
2 0.0188 0.08
3 0.129 0.2
Fig. 9 Transient thermal impedance junction
to heatsink (per thyristor or diode)
R
for various conduction angles d:
thJK
d R
DC 0.225
180° 0.237
120° 0.246
60° 0.267
30° 0.297
Constants for Z
iR
1 0.0072 0.001
2 0.0188 0.08
3 0.129 0.2
4 0.07 1.0
calculation:
thJC
(K/W) ti (s)
thi
(K/W)
thJK
calculation:
thJK
(K/W) ti (s)
thi
UK : Westcode Semiconductors Ltd
P .O. Box 97, Chippenham, Wiltshire, England SN15 1JL
WESTCODE
T el : +44 (0)1249 444524 Fax : +44 (0)1249 659448
E-Mail : [email protected]
SEMICONDUCTORS
USA : Westcode Semiconductors Inc
3270 Cherry Avenue Long Beach, California 90807
WWW: http//www .westcode.com
In the interest of Product improvement Westcode reserves the right to change specifications at any time without notice. © Westcode Semiconductors Ltd
T el : 562 595 6971 Fax : 562 595 8182
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