Datasheet WPT 132-08, WPH 132-08, WPT 132-12, WPH 132-12, WPT 132-14 Datasheet (Westcode Semiconductors)

WESTCODE

SEMICONDUCTORS

Thyristor Modules
Thyristor/Diode Modules

V

RSM

V

DSM

VV

900 800 WPT 132-08 WPH 132-08
1300 1200 WPT 132-12 WPH 132-12
1500 1400 WPT 132-14 WPH 132-14
1700 1600 WPT 132-16 WPH 132-16
1900 1800 WPT 132-18 WPH 132-18

Symbol Test Conditions Maximum Ratings
I

TRMS

I

TAVM

I

TSM

∫∫

∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 151 000 A2s

∫∫

(di/dt)

(dv/dt)

P

GM

P

GAV

V

RGM

T

VJ

T

VJM

T

stg

V

ISOL

M

d

Weight Typical including screws 125 g

V

RRM

V

DRM

, I

FRMS

, I

FAVM

, I

FSM

Type

TVJ = T

VJM

TC = 85°C; 180° sine 130 A

300 A

TVJ = 45°C; t = 10 ms (50 Hz), sine 5500 A
VR = 0 t = 8.3 ms (60 Hz), sine 5850 A

T

= T

VJ

VJM

= 0 t = 8.3 ms (60 Hz), sine 5100 A

V

R

t = 10 ms (50 Hz), sine 4800 A

VR = 0 t = 8.3 ms (60 Hz), sine 142 000 A2s
TVJ = T

VJM

VR = 0 t = 8.3 ms (60 Hz), sine 108 000 A2s

cr

TVJ = T

VJM

f =50 Hz, tP =200 µs
VD = 2/3 V
IG = 0.5 A non repetitive, IT = 500 A 500 A/µs

DRM

t = 10 ms (50 Hz), sine 115 000 A2s

repetitive, IT = 500 A 1 50 A/µs

diG/dt = 0.5 A/µs
TVJ = T

cr

RGK = ∞; method 1 (linear voltage rise)
TVJ = T

= I

I

T

;V

VJM

VJM

TAVM

tP = 30 µs 120 W
tP = 500 µs60W

= 2/3 V

DR

DRM

1000 V/µs

8W

10 V

-40...+125 °C
125 °C

-40...+125 °C

50/60 Hz, RMS t = 1 min 3000 V~
I

≤ 1 mA t = 1 s 3600 V~

ISOL

Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M6) 4.5-5.5/40-48 Nm/lb.in.

I

TRMS

I

TAVM

V

RRM

= 2 x 300 A
= 2 x 130 A
= 800 - 1800 V

6

3

2

1

36 7 1

WPT 132

1 5 4 2

3

WPH 132

Features

●

International standard package

●

Direct copper bonded Al2O3 -ceramic
base plate

●

Planar passivated chips

●

Isolation voltage 3600 V~

●

Keyed gate/cathode twin pins

Applications

●

Motor control

●

Power converter

●

Heat and temperature control for
industrial furnaces and chemical
processes

●

Lighting control

●

Contactless switches

Advantages

●

Space and weight savings

●

Simple mounting

●

Improved temperature and power
cycling

●

Reduced protection circuits

7

5

5 4 2

4

Symbol Test Conditions Characteristic Values

, I

I

RRM

DRM

, V

V

T

F

V

T0

r

T

V

GT

I

GT

V

GD

I

GD

I

L

I

H

t

gd

t

q

Q

S

I

RM

R

thJC

R

thJK

d

S

d

A

a Maximum allowable acceleration 5 0 m/s

TVJ= T

; VR = V

VJM

RRM

; VD = V

DRM

10 mA
IT, IF = 300 A; TVJ = 25°C 1.36 V
For power-loss calculations only (TVJ = 125°C) 0.8 V

1.5 mΩ

VD = 6 V; TVJ = 25°C 2.5 V

TVJ = -40°C 2.6 V

VD = 6 V; TVJ = 25°C 150 mA

TVJ = -40°C 200 mA

TVJ = T

;V

VJM

D

= 2/3 V

DRM

0.2 V
10 mA

TVJ = 25°C; tP = 30 µs; VD = 6 V 300 mA
IG = 0.5 A; diG/dt = 0.5 A/µs

TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA
TVJ = 25°C; VD = 1/2 V

IG = 0.5 A; diG/dt = 0.5 A/µs
TVJ = T

VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 V
TVJ = T

; IT = 160 A, tP = 200 µs; -di/dt = 10 A/µs typ. 150 µs

VJM

; IT, IF = 300 A, -di/dt = 50 A/µs 550 µC

VJM

DRM

DRM

2 µs

235 A

per thyristor/diode; DC current 0.23 K/W
per module other values 0.115 K/W
per thyristor/diode; DC current see Fig. 8/9 0.33 K/W
per module 0.165 K/W

Creepage distance on surface 12.7 mm
Strike distance through air 9.6 mm

Fig. 1 Gate trigger characteristics

2

Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type U9911 UL 758, style 1385,

CSA class 5851, guide 460-1-1

Dimensions in mm (1 mm = 0.0394")
WPT 132 WPH 132

Fig. 2 Gate trigger delay time

Fig. 3 Surge overload current

I

, I

: Crest value, t: duration

TSM

FSM

Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current

at case temperature

Fig. 5 Power dissipation versus on-

state current and ambient
temperature (per thyristor or
diode)

Fig. 6 Three phase rectifier bridge:

Power dissipation versus direct
output current and ambient
temperature

Circuit
B6
3 x WPT 132 or
3 x WPH 132

Circuit
W 3
3 x WPT 132 or
3 x WPH 132

Fig. 7 Three phase AC-controller:

Power dissipation versus RMS
output current and ambient
temperature

Fig. 8 Transient thermal impedance junction

to case (per thyristor or diode)

R

for various conduction angles d:

thJC

d R

DC 0.230

180° 0.244
120° 0.255

60° 0.283
30° 0.321

thJC

(K/W)

Constants for Z

iR

1 0.0095 0.001
2 0.0175 0.065
3 0.203 0.4

Fig. 9 Transient thermal impedance junction

to heatsink (per thyristor or diode)

R

for various conduction angles d:

thJK

d R

DC 0.330

180° 0.344
120° 0.355

60° 0.383
30° 0.421

Constants for Z

iR

1 0.0095 0.001
2 0.0175 0.065
3 0.203 0.4
4 0.1 1.29

calculation:

thJC

(K/W) ti (s)

thi

(K/W)

thJK

calculation:

thJK

(K/W) ti (s)

thi

UK : Westcode Semiconductors Ltd

P .O. Box 97, Chippenham, Wiltshire, England SN15 1JL

WESTCODE

T el : [phone] Fax : [phone]

E-Mail : [e-mail]

SEMICONDUCTORS

USA : Westcode Semiconductors Inc

3270 Cherry Avenue Long Beach, California 90807

WWW: http//www .westcode.com

In the interest of Product improvement Westcode reserves the right to change specifications at any time without notice. © Westcode Semiconductors Ltd

T el : 562 595 6971 Fax : [phone]