Datasheet WPT 312-12, WPH 312-12, WPT 312-14, WPH 312-14, WPT 312-16 Datasheet (Westcode Semiconductors)
...Page 1
WESTCODE
SEMICONDUCTORS
Thyristor Modules
Thyristor/Diode Modules
V
RSM
V
DSM
V V
1300 1200 WPT 312-12 WPH 312-12
1500 1400 WPT 312-14 WPH 312-14
1700 1600 WPT 312-16 WPH 312-16
1900 1800 WPT 312-18 WPH 312-18
Symbol Test Conditions Maximum Ratings
, I
I
TRMS
FRMS
I
, I
TAVM
FAVM
, I
I
TSM
FSM
2
∫∫
dt TVJ = 45°C t = 10 ms (50 Hz) 423 000 A2s
∫i
∫∫
(di/dt)
cr
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight Typical including screws 750 g
V
RRM
V
DRM
TVJ = T
VJM
TC = 85°C; 180° sine 320 A
Type
520 A
TVJ = 45°C; t = 10 ms (50 Hz) 9200 A
VR = 0 t = 8.3 ms (60 Hz) 10100 A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) 8800 A
t = 10 ms (50 Hz) 8000 A
VR = 0 t = 8.3 ms (60 Hz) 423 000 A2s
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) 321 000 A2s
TVJ = T
VJM
f =50 Hz, tP =200 µs
VD = 2/3 V
IG = 1 A, non repetitive, IT = I
DRM
diG/dt = 1 A/µs
TVJ = T
RGK = ∞; method 1 (linear voltage rise)
TVJ = T
I
= I
T
; VDR = 2/3 V
VJM
VJM
TAVM
t = 10 ms (50 Hz) 320 000 A2s
repetitive, IT = 960 A 100 A/µs
TAVM
DRM
500 A/µs
1000 V/µs
tP = 30 µs 120 W
tP = 500 µs60W
20 W
10 V
-40...+140 °C
140 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 3000 V~
I
≤ 1 mA t = 1 s 3600 V~
ISOL
Mounting torque (M6) 4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.
I
TRMS
I
TAVM
V
RRM
= 2 x 520 A
= 2 x 320 A
= 1200 - 1800 V
3
2
1
3
6 7 1 5 4 2
WPT 312
1 5 4 2
3
WPH 312
Features
●
International standard package
●
Direct copper bonded Al2O3-ceramic
with copper base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
Keyed gate/cathode twin pins
Applications
●
Motor control, softstarter
●
Power converter
●
Heat and temperature control for
industrial furnaces and chemical
processes
●
Lighting control
●
Solid state switches
Advantages
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
7
6
5
4
Page 2
Symbol Test Conditions Characteristic Values
, I
I
RRM
DRM
, V
V
T
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a Maximum allowable acceleration 5 0 m/s
TVJ= T
; VR = V
VJM
RRM
; VD = V
DRM
40 mA
IT, IF = 600 A; TVJ = 25°C 1.32 V
For power-loss calculations only (TVJ = 140°C) 0.8 V
0.68 mΩ
VD = 6 V; TVJ = 25°C2V
TVJ = -40°C3V
VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 220 mA
TVJ = T
TVJ = T
;V
VJM
;V
VJM
D
D
= 2/3 V
= 2/3 V
DRM
DRM
0.25 V
10 mA
TVJ = 25°C; tP = 30 µs; VD = 6 V 200 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA
TVJ = 25°C; VD = 1/2 V
IG = 1 A; diG/dt = 1 A/µs
TVJ = T
VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 V
; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. 200 µs
VJM
DRM
DRM
2 µs
TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/µs 760 µC
275 A
per thyristor (diode); DC current 0.12 K/W
per module other values 0.06 K/W
per thyristor (diode); DC current see Fig. 8/9 0.16 K/W
per module 0.08 K/W
Creeping distance on surface 12.7 m m
Creepage distance in air 9.6 mm
10
1: IGT, T
2: I
V
3: I
V
G
1
0.1
-3
10
GT
GT
IGD, T
, T
, T
VJ
10
= 140°C
VJ
= 25°C
VJ
= -40°C
VJ
1
= 140°C
-2
2
-1
10
Fig. 1 Gate trigger characteristics
100
s
µ
t
gd
typ.
10
2
3
Limit
6
5
4
4: P
= 20 W
GM
= 60 W
5: P
GM
= 120 W
6: P
GM
0
1
10
10
I
G
T
= 25°C
VJ
2
10
A
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type U9911 UL 758, style 1385,
CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
WPT 312 WPH 312
M8x20
M8x20
1
0.01 0.1 1 10
I
G
Fig. 2 Gate trigger delay time
A
Page 3
I
TSM
10000
8000
6000
4000
6
10
VR = 0V
A
50 Hz
80 % V
RRM
TVJ = 45°C
= 140°C
T
VJ
I2t
A2s
TVJ = 45°C
5
10
TVJ = 140°C
I
TAVM
I
FAVM
600
500
400
300
A
DC
180° sin
120°
60°
30°
200
2000
0
0.001 0.01 0.1 1
Fig. 3 Surge overload current
I
, I
: Crest value, t: duration
TSM
FSM
600
P
tot
W
500
400
300
200
100
0
0 100 200 300 400 500
s
DC
180° sin
120°
60°
30°
I
TAVM
4
10
110
t
Fig. 4 I2t versus time (1-10 ms) Fig. 4a Maximum forward current
R
thKA
0.06
0.1
0.2
0.3
0.4
0.6
0.8
A
0 25 50 75 100 125 150
/ I
FAVM
°C
t
K/W
T
A
ms
100
0
0 25 50 75 100 125 150
T
C
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
°C
3000
P
tot
W
2500
2000
1500
1000
500
0
0 200 400 600 800
Circuit
B6
3xWPT312 or
3xWPH312
A
I
dAVM
R
K/W
thKA
0.02
0.04
0.07
0.1
0.15
0.2
0.3
0 25 50 75 100 125 150
°C
T
A
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Page 4
3000
W
2500
P
tot
2000
R
thKA
0.02
0.04
0.07
0.1
K/W
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS output
current and ambient temperature
0.15
0.2
1500
0.3
1000
500
0
0.20
K/W
0.15
Z
thJC
0.10
0.05
Circuit
W3
3xMCC312 or
3xMCD312
I
RMS
0A
0 2550751001251500 200 400 600
°C
T
A
Fig. 8 Transient thermal impedance junction
to case (per thyristor or diode)
R
for various conduction angles d:
thJC
d R
thJC
(K/W)
DC 0.120
180° 0.128
120° 0.135
30°
60°
120°
180°
DC
60° 0.153
30° 0.185
Constants for Z
iR
thJC
thi
calculation:
(K/W) ti (s)
1 0.0058 0.00054
0.00
-3
10
-2
10
-1
10
0
10
1
10
s
t
2
10
2 0.031 0.098
3 0.072 0.54
4 0.0112 12
0.25
K/W
0.20
Z
thJK
0.15
Fig. 9 Transient thermal impedance junction
to heatsink (per thyristor or diode)
R
for various conduction angles d:
thJK
d R
thJK
(K/W)
DC 0.160
180° 0.168
120° 0.175
60° 0.193
0.10
0.05
30°
60°
120°
180°
DC
30° 0.225
Constants for Z
iR
thJK
thi
calculation:
(K/W) ti (s)
1 0.0058 0.00054
2 0.031 0.098
0.00
-3
10
-2
10
-1
10
0
10
1
s
10
t
2
10
3 0.072 0.54
4 0.0112 12
5 0.04 12
UK : Westcode Semiconductors Ltd
P .O. Box 97, Chippenham, Wiltshire, England SN15 1JL
WESTCODE
T el : +44 (0)1249 444524 Fax : +44 (0)1249 659448
E-Mail : [email protected]
SEMICONDUCTORS
USA : Westcode Semiconductors Inc
3270 Cherry Avenue Long Beach, California 90807
WWW: http//www .westcode.com
In the interest of Product improvement Westcode reserves the right to change specifications at any time without notice. © Westcode Semiconductors Ltd
T el : 562 595 6971 Fax : 562 595 8182
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