Datasheet WPH 26-08, WPT 26-12, WPH 26-12, WPT 26-14, WPH 26-14 Datasheet (Westcode Semiconductors)

WESTCODE

SEMICONDUCTORS

Thyristor Modules Thyristor/Diode Modules

V

RSM

V

DSM

VV

900 800 WPT 26-08 WPH 26-08 1300 1200 WPT 26-12 WPH 26-12 1500 1400 WPT 26-14 WPH 26-14 1700 1600 WPT 26-16 WPH 26-16

Symbol Test Conditions Maximum Ratings I

TRMS

I

TAVM

I

TSM

∫∫

∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 1350 A2s

∫∫

(di/dt)

(dv/dt)

P

GM

P

GAV

V

RGM

T

VJ

T

VJM

T

stg

V

ISOL

M

d

Weight Typical including screws 90 g

V

RRM

V

DRM

, I

FRMS

, I

FAVM

, I

FSM

Type

TVJ = T

VJM

TC = 75°C; 180° sine 32 A

50 A

TC = 85°C; 180° sine 27 A TVJ = 45°C; t = 10 ms (50 Hz), sine 520 A

VR = 0 t = 8.3 ms (60 Hz), sine 560 A TVJ = T

VJM

VR = 0 t = 8.3 ms (60 Hz), sine 500 A

t = 10 ms (50 Hz), sine 460 A

VR = 0 t = 8.3 ms (60 Hz), sine 1300 A2s TVJ = T

VJM

VR = 0 t = 8.3 ms (60 Hz), sine 1030 A2s

cr

TVJ = T

VJM

f =50 Hz, tP =200 µs VD = 2/3 V IG = 0.45 A non repetitive, IT = I

DRM

diG/dt = 0.45 A/µs TVJ = T

cr

RGK = ∞; method 1 (linear voltage rise) TVJ = T

= I

I

T

;V

VJM

TAVM

t = 10 ms (50 Hz), sine 1050 A2s

repetitive, IT = 45 A 150 A/µs

500 A/µs

1000 V/µs

= 2/3 V

DR

TAVM

DRM

tP = 30 µs10W tP = 300 µs5W

0.5 W 10 V

-40...+125 °C 125 °C

-40...+125 °C

50/60 Hz, RMS t = 1 min 3000 V~ I

≤ 1 mA t = 1 s 3600 V~

ISOL

Mounting torque (M5) 2.5-4.0/22-35 Nm/lb.in. Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.

I

TRMS

I

TAVM

V

RRM

= 2 x 50 A = 2 x 32 A = 800 - 1600 V

TO-240 AA

6

3

2

1

3 6 7 1 5 4 2

7

WPT 26

3 1 5 2

WPH 26

Features

●

International standard package, JEDEC TO-240 AA

●

Direct copper bonded Al2O3 -ceramic base plate

●

Planar passivated chips

●

Isolation voltage 3600 V~

●

Gate-cathode twin pins for WPT

Applications

●

DC motor control

●

Softstart AC motor controller

●

Light, heat and temperature control

Advantages

●

Space and weight savings

●

Simple mounting with two screws

●

Improved temperature and power cycling

●

Reduced protection circuits

4

5

Symbol Test Conditions Characteristic Values

, I

I

RRM

DRM

, V

V

T

F

V

T0

r

T

V

GT

I

GT

V

GD

I

GD

I

L

I

H

t

gd

t

q

Q

S

I

RM

R

thJC

R

thJK

d

S

d

A

a Maximum allowable acceleration 5 0 m/s

Optional accessories for module-type WPT Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type U9910 UL 758, style 1385,

TVJ= T

; VR = V

VJM

RRM

; VD = V

DRM

3mA IT, IF = 80 A; TVJ = 25°C 1.64 V For power-loss calculations only (TVJ = 125°C) 0.85 V

11.0 mΩ

VD = 6 V; TVJ = 25°C 1.5 V

TVJ = -40°C 1.6 V

VD = 6 V; TVJ = 25°C 100 mA

TVJ = -40°C 200 mA

TVJ = T

;V

VJM

D

= 2/3 V

DRM

0.2 V 10 mA

TVJ = 25°C; tP = 10 µs; VD = 6 V 450 mA IG = 0.45 A; diG/dt = 0.45 A/µs

TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA TVJ = 25°C; VD = 1/2 V

IG = 0.45 A; diG/dt = 0.45 A/µs TVJ = T

VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 V TVJ = T

; IT = 20 A, tP = 200 µs; -di/dt = 10 A/µs typ. 150 µs

VJM

; IT, IF = 25 A, -di/dt = 0.64 A/µs50µC

VJM

DRM

2 µs

6A

per thyristor/diode; DC current 0.88 K/W per module other values 0.44 K/W per thyristor/diode; DC current see Fig. 8/9 1.08 K/W per module 0.54 K/W

Creepage distance on surface 12.7 mm Strike distance through air 9.6 mm

CSA class 5851, guide 460-1-1

10

1: IGT, T 2: IGT, T

V

3: I

V

G

1

0.1

0

10

GT

IGD, T

VJ VJ

, T

VJ

10

= 125°C = 25°C = -40°C

1

= 125°C

1

Fig. 1 Gate trigger characteristics

1000

s

µ

t

gd

100

2

10

typ.

2

10

Limit

3

4

4: P

GAV

5: P

GM

6: P

GM

2

10

I

G

T

= 0.5 W = 5 W = 10 W

3

= 25°C

VJ

5

mA

6

4

10

Dimensions in mm (1 mm = 0.0394") WPT 26 WPH 26

1

10 100 1000

mA

I

G

Fig. 2 Gate trigger delay time

Fig. 3 Surge overload current

I

, I

: Crest value, t: duration

TSM

FSM

Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current

at case temperature

Fig. 5 Power dissipation versus on-

state current and ambient temperature (per thyristor or diode)

Fig. 6 Three phase rectifier bridge:

Power dissipation versus direct output current and ambient temperature

Circuit B6 3 x WPT 26 or 3 x WPH 26

WPT 26 WPH 26

Circuit W 3 3 x WPT 26 or 3 x WPH 26

Fig. 7 Three phase AC-controller:

Power dissipation versus RMS output current and ambient temperature

Fig. 8 Transient thermal impedance junction

to case (per thyristor or diode)

R

for various conduction angles d:

thJC

d R

DC 0.88

180° 0.92 120° 0.95

60° 0.98 30° 1.01

thJC

(K/W)

WPT 26 WPH 26

Constants for Z

iR

1 0.019 0.0031 2 0.029 0.0216 3 0.832 0.191

Fig. 9 Transient thermal impedance junction

to heatsink (per thyristor or diode)

R

for various conduction angles d:

thJK

d R

DC 1.08

180° 1.12 120° 1.15

60° 1.18 30° 1.21

Constants for Z

iR

1 0.019 0.0031 2 0.029 0.0216 3 0.832 0.191 4 0.2 0.45

calculation:

thJC

(K/W) ti (s)

thi

(K/W)

thJK

calculation:

thJK

(K/W) ti (s)

thi

UK : Westcode Semiconductors Ltd

P .O. Box 97, Chippenham, Wiltshire, England SN15 1JL

WESTCODE

T el : +44 (0)1249 444524 Fax : +44 (0)1249 659448

E-Mail : [email protected]

SEMICONDUCTORS

USA : Westcode Semiconductors Inc

3270 Cherry Avenue Long Beach, California 90807

WWW: http//www .westcode.com

In the interest of Product improvement Westcode reserves the right to change specifications at any time without notice. © Westcode Semiconductors Ltd

T el : 562 595 6971 Fax : 562 595 8182