
REV NO: V.2 DATE: APR/19/2005 PAGE:
CHECKED: Allen Liu DRAWN: S.H.CHEN ERP: 1101
1. All dimensions are in millimeters (inches).
±0
.25(0.01") unless ot h er wis e note d.
Lead spaci ng is m easure d where t he leads emer ge from the pack age.
4. Specifications are subject to change without notice.
The Super Bright Red source color devices are made with
Gallium Aluminum Arsenide Red Light Emitting Diode.

REV NO: V.2 DATE: APR/19/2005 PAGE:
CHECKED: Allen Liu DRAWN: S.H.CHEN ERP: 1101
1
/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
Electrical / Optical Characteristics at T
=25°CAbsolute Maximum Ratings at T
SUPER BRIGHT RED (GaAlAs)
°
30mAPeak Forward Current [1]
5VOperating / Storage Temperature
Lead Solder Te mperature [2]
Lead Solder Te mperature [3]
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
3. 5mm below package bas e.
θ
λ
λ
∆λ

REV NO: V.2 DATE: APR/19/2005 PAGE:
CHECKED: Allen Liu DRAWN: S.H.CHEN ERP: 1101

REV NO: V.2 DATE: APR/19/2005 PAGE:
CHECKED: Allen Liu DRAWN: S.H.CHEN ERP: 1101
PACKING & LABEL SPECIFICATIONS WP813SRD/E
If special sorting is required (e.g. binning based on forward voltage, luminous intensity, or wavelength),
the typical accuracy of the sorting process is as follows:
2. Luminous Intensity: +/
Note: Accuracy may depend on the sorting parameters.