Datasheet WMS128K8L-55DRIA, WMS128K8L-55DRI, WMS128K8L-55DRCA, WMS128K8L-55DRC, WMS128K8L-55DJMA Datasheet (White Electronic Designs)

128Kx8 MONOLITHIC SRAM, SMD 5962-96691

5
6
7
8
9
10
11
12
13

29
28
27
26
25
24
23
22
21

4321323130

14 15 16 17 18 19 20

A7
A6
A5
A4
A3
A2
A1
A0

I/O

0

I/O1

I/O2

V

SS

I/O3

I/O4

I/O5

I/O6

WE
A13
A8
A9
A11
OE
A10
CS
I/O7

A12

A14

A16NCVCCA15

NC

FEATURES

■ Access Times 15, 17, 20, 25, 35, 45, 55ns

■ Revolutionary, Center Power/Ground Pinout

JEDEC Approved

•32 lead Ceramic SOJ (Package 101)

•36 lead Ceramic SOJ (Package 100)

•36 lead Ceramic Flat Pack (Package 226)

■ Evolutionary, Corner Power/Ground Pinout

JEDEC Approved

•32 pin Ceramic DIP (Package 300)

•32 lead Ceramic SOJ (Package 101)

•32 lead Ceramic Flat Pack (Package 206)

36 FLAT P ACK
36 CSOJ

TOP VIEW

1

NC

A0

2

A1

3

A2

4

A3

5

CS

6

I/O0

7

I/O1

8

CC

V

9

GND

10

I/O2

11

I/O3

12

WE

13

A4

14

A5

15

A6

16

A7

17

NC

18

NC

36

A16

35

A15

34

A14

33

A13

32

OE

31

I/O7

30

I/O6

29

GND

28

CC

27

V
I/O5

26

I/O4

25

A12

24
23

A11

22

A10

21

A9

20

A8

19

NC

32 CSOJ (DR)

TOP VIEW

1

A0
A1

2

A2

3

A3

4

CS

5

I/O1

6

I/O2

7

CC

V

8

GND

9

I/O3

10

I/O4

11

WE

12

A4

13

A5

14

A6

15

A7

16

EVOLUTIONARY PINOUTREVOLUTIONARY PINOUT

A16

32

A15

31

A14

30

A13

29
28

OE

27

I/O8

26

I/O7

25

GND

24

CC

V

23

I/O6

22

I/O5

21

A12

20

A11

19

A10

18

A9

17

A8

■ 32 pin, Rectangular Ceramic Leadless Chip Carrier

(Package 601)

■ MIL-STD-883 Compliant Devices Available

■ Commercial, Industrial and Military Temperature Range

■ 5 Volt Power Supply

■ Low Power CMOS

■ 2V Data Retention Devices Available

(Low Power Version)

■ TTL Compatible Inputs and Outputs

32 DIP
32 CSOJ (DE)
32 FLAT PACK (FE)

TOP VIEW

1

NC

A16

2

A14

3

A12

4

A7

5

A6

6

A5

7

A4

8

A3

9

A2

10

A1

11

A0

12

I/O0

13

I/O1

14

I/O2

15

GND

16

WMS128K8-XXX

HI-RELIABILITY PRODUCT

32 CLCC

TOP VIEW

V

CC

32

A15

31
30

NC

29

WE

28

A13

27

A8

26

A9

25

A11

24

OE

23

A10

22

CS

21

I/O7

20

I/O6

19

I/O5

18

I/O4

17

I/O3

February 2000 Rev. 3

PIN DESCRIPTION

A0-16 Address Inputs

I/O0-7 Data Input/Output

CS Chip Select

OE Output Enable
WE Write Enable
VCC +5.0V Power

GND Ground

1

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WMS128K8-XXX

TRUTH TABLEABSOLUTE MAXIMUM RATINGS

Parameter Symbol Min Max Unit

Operating Temperature T
Storage Temperature T
Signal Voltage Relative to GND V
Junction Temperature T
Supply Voltage V

A -55 +125 °C

STG -65 +150 °C

G -0.5 Vcc+0.5 V
J 150 °C

CC -0.5 7.0 V

CAPACITANCE

A = +25°C)

(T

Parameter

Input capacitance C

Output capicitance C

Symbol

IN

OUT

Condition Package Speed (ns) Max Unit

VIN = 0V, f = 1.0MHz

V

OUT

= 0V, f = 1.0MHz

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

CC

= 5.0V, GND = 0V, TA = -55°C to +125°C)

(V

Parameter Sym Conditions -15 -17 -20 -25 Units

Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 10 10 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 10 µA
Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 150 150 150 150 mA
Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 20 20 20 15 mA
Output Low Voltage VOL IOL = 8mA, VCC = 4.5 0.4 0.4 0.4 0.4 V
Output High Voltage V

OH IOH = -4.0mA, VCC = 4.5 2.4 2.4 2.4 2.4 V

CS OE WE Mode Data I/O Power

H X X Standby High Z Standby
L L H Read Data Out Active
L X L Write Data In Active
L H H Out Disable High Z Active

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Min Max Unit

Supply Voltage V
Input High Voltage V
Input Low Voltage V
Operating Temp. (Mil.) T

32 Pin CSOJ, DIP, 15 to 55 20 pF
Flat Pack Evolutionary
36 Pin CSOJ, Flat Pack and 15 to 25 12 pF
32 Pin CSOJ Revolutionary 35 to 55 20 pF

32 Pin CSOJ, DIP, 15 to 55 20 pF
Flat Pack Evolutionary
36 Pin CSOJ, Flat Pack and 15 to 25 12 pF
32 Pin CSOJ Revolutionary 35 to 55 20 pF

32 Pin CLCC 15 to 55 15 pF

Min Max Min Max Min Max Min Max

CC 4.5 5.5 V
IH 2.2 VCC + 0.3 V

IL -0.3 +0.8 V
A -55 +125 °C

Parameter Sym Conditions -35 -45 -55 Units

Min Max Min Max Min Max

Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 10 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 µA
Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 150 150 150 mA
Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 15 15 15 mA
Output Low Voltage VOL IOL = 2.1mA, VCC = 4.5 0.4 0.4 0.4 V
Output High Voltage V

NOTE: DC test conditions: V

White Electronic Designs Corporation • [phone] • www.whiteedc.com

IH = VCC -0.3V, VIL = 0.3V

OH IOH = -1.0mA, VCC = 4.5 2.4 2.4 2.4 V

2

WMS128K8-XXX

AC CHARACTERISTICS

(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)

Parameter Symbol -15 -17 -20 -25 -35 -45 -55 Units

Read Cycle Min Max Min Max Min Max Min Max Min Max Min Max Min Max

Read Cycle Time tRC 15 17 20 25 35 45 55 ns
Address Access Time tAA 15 17 20 25 35 45 55 ns
Output Hold from Address Change tOH 00000 00ns
Chip Select Access Time tACS 15 17 20 25 35 45 55 ns
Output Enable to Output Valid tOE 10 10 12 15 20 25 30 ns
Chip Select to Output in Low Z tCLZ
Output Enable to Output in Low Z tOLZ
Chip Disable to Output in High Z tCHZ
Output Disable to Output in High Z t

1. This parameter is guaranteed by design but not tested.

Parameter Symbol -15 -17 -20 -25 -35 -45 -55 Units

Write Cycle Min Max Min Max Min Max Min Max Min Max Min Max Min Max

Write Cycle Time tWC 15 17 20 25 35 45 55 ns
Chip Select to End of Write tCW 14 14 15 20 25 30 45 ns
Address Valid to End of Write tAW 14 15 15 20 25 30 45 ns
Data Valid to End of Write tDW 10 10 12 15 20 25 25 ns
Write Pulse Width tWP 14 14 15 20 25 30 45 ns
Address Setup Time tAS 0000 0 0 0ns
Address Hold Time tAH 0000 0 0 0ns
Output Active from End of Write tOW
Write Enable to Output in High Z tWHZ
Data Hold Time t

1. This parameter is guaranteed by design but not tested.

1

33333 33ns

1

00000 00ns

OHZ

1

1

10 10 10 12 20 20 20 ns
10 10 10 12 20 20 20 ns

AC CHARACTERISTICS

CC

= 5.0V, GND = 0V, TA = -55°C to +125°C)

(V

1

3333 4 4 4 ns

1

DH 0000 0 0 0ns

10 10 12 15 20 25 25 ns

AC TEST CIRCUIT

Current Source

D.U.T.

C = 50 pf

eff

Current Source

AC TEST CONDITIONS

I

OL

V ≈ 1.5V

Z

(Bipolar Supply)

I

OH

3

Parameter Typ Unit

Input Pulse Levels VIL = 0, VIH = 3.0 V
Input Rise and Fall 5 ns
Input and Output Reference Level 1.5 V
Output Timing Reference Level 1.5 V

NOTES:

Z is programmable from -2V to +7V.

V
I

OL & IOH programmable from 0 to 16mA.

Tester Impedance Z

Z is typically the midpoint of VOH and VOL.

V
I

OL & IOH

are adjusted to simulate a typical resistive load circuit.

ATE tester includes jig capacitance.

White Electronic Designs Corporation • [phone] • www.whiteedc.com

0 = 75 Ω.

TIMING WAVEFORM - READ CYCLE

t

ADDRESS

t

DATA I/O

RC

t

AA

OH

WMS128K8-XXX

t

t
t

t

ACS
CLZ

RC

AA

t

CHZ

t

OE

t

OLZ

DATA VALID

t

OHZ

ADDRESS

CS

OE

DATA VALIDPREVIOUS DATA VALID

DATA I/O

HIGH IMPEDANCE

READ CYCLE 1 (CS = OE = V

WRITE CYCLE - WE CONTROLLED

ADDRESS

CS

WE

DATA I/O

WRITE CYCLE - CS CONTROLLED

ADDRESS

CS

, WE = VIH)

IL

t

WC

t

AW

t

CW

t

AS

WRITE CYCLE 1, WE CONTROLLED

t

WHZ

t

WP

t

WC

WS32K32-XHX

t

t

AS

AW

t

CW

t

DW

DATA VALID

READ CYCLE 2 (WE = V

t

AH

t

OW

t

DH

t

AH

)

IH

WE

DATA I/O

WRITE CYCLE 2, CS CONTROLLED

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t

WP

t

DW

DATA VALID

t

DH

4

PACKAGE 100: 36 LEAD, CERAMIC SOJ

WMS128K8-XXX

23.37 (0.920) ± 0.25 (0.010)

11.23 (0.442)

± 0.30 (0.012)

PIN 1 IDENTIFIER

1.27 (0.050) TYP

21.6 (0.850) TYP

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

PACKAGE 101: 32 LEAD, CERAMIC SOJ

21.1 (0.830) ± 0.25 (0.010)

11.23 (0.442)

± 0.30 (0.012)

0.2 (0.008)

± 0.05 (0.002)

0.2 (0.008)

± 0.05 (0.002)

4.7 (0.184) MAX

0.89 (0.035)
Radius TYP

9.55 (0.376) ± 0.25 (0.010)

1.27 (0.050) ± 0.25 (0.010)

3.96 (0.156) MAX

0.89 (0.035)
Radius TYP

9.55 (0.376) ± 0.25 (0.010)

PIN 1 IDENTIFIER

1.27 (0.050) ± 0.25 (0.010)

1.27 (0.050) TYP

19.1 (0.750) TYP

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

5

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PACKAGE 206: 32 LEAD, CERAMIC FLAT PACK

20.83 (0.820)
± 0.25 (0.010)

3.18 (0.125) MAX

WMS128K8-XXX

PIN 1
IDENTIFIER

10.41 (0.410)

± 0.13 (0.005)

0.43 (0.017)
± 0.05 (0.002)

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

PACKAGE 226: 36 LEAD, CERAMIC FLAT PACK

23.37 (0.920)
± 0.25 (0.010)

12.95 (0.510)

± 0.13 (0.005)

0.127 (0.005)
+ 0.05 (0.002)
– 0.025 (0.001)

2.72 (0.107)
MAX

7.87 (0.310)

± 0.13 (0.005)

1.27 (0.050) TYP

19.05 (0.750) TYP

6.35 (0.250)
MIN

12.7 (0.500)
± 0.5 (0.020)

PIN 1
IDENTIFIER

0.43 (0.017)

3.8 (0.150)
TYP

± 0.05 (0.002)

32.64 (1.285) TYP

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

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0.127 (0.005)
± 0.05 (0.002)

6

1.27 (0.050) TYP

21.59 (0.850) TYP

38.1 (1.50) ± 0.4 (0.015)

5.1 (0.200)
± 0.25 (0.010)

PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED

42.8 (1.686) MAX

PIN 1 IDENTIFIER

0.99 (0.039)

2.5 (0.100)
TYP

1.27 (0.050)
± 0.1 (0.005)

0.46 (0.018)

± 0.05 (0.002)

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

± 0.51 (0.020)

5.13 (0.202) MAX

3.2 (0.125) MIN

WMS128K8-XXX

0.25 (0.010)

± 0.05 (0.002)

15.25 (0.600)

± 0.25 (0.010)

7

White Electronic Designs Corporation • [phone] • www.whiteedc.com

PACKAGE 601: 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER

7.62 (0.300) TYP

3.81
(0.150) TYP

5.08

(0.200)

TYP

0.56 (0.022)

0.71 (0.028)

PIN 1

10.16

(0.400)

TYP

WMS128K8-XXX

0.38 (0.015) x 45°

PIN 1 IDENTIFIER

13.79 (0.543)

14.15 (0.557)

1.02 (0.040) x 45°
3 PLACES

11.25 (0.443)

14.15 (0.457)

1.63 (0.064)

2.54 (0.100)

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

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8

WMS128K8-XXX

DATA RETENTION CHARACTERISTICS

A

= -55°C to +125°C)

(T

LOW POWER VERSION ONLY

Parameter Symbol Conditions Units

Min Typ Max

Data Retention Supply Voltage V
Data Retention Current I

DR CS ≥ VCC -0.2V 2.0 5.5 V

CCDR2 VCC = 2V 2 mA

ORDERING INFORMATION

W M S 128K8 X - XXX X X X

LEAD FINISH:

Blank = Gold plated leads
A = Solder dip leads

DEVICE GRADE:

M= Military Screened -55°C to +125°C
I = Industrial -40°C to +85°C
C = Commercial 0°C to +70°C

PACKAGE:

C = 32 Pin Ceramic .600" DIP (Package 300)
CL = 32 Pin Rectangular Ceramic Leadless Chip Carrier (Package 601)
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary
DJ = 36 Lead Ceramic SOJ (Package 100)
DR = 32 Lead Ceramic SOJ (Package 101) Revolutionary
F = 36 Lead Ceramic Flat Pack (Package 226)
FE = 32 Lead Ceramic Flat Pack (Package 220)

ACCESS TIME (ns)

IMPROVEMENT MARK

L = Low Power for 2V Data Retention

ORGANIZATION, 128K x 8

SRAM

MONOLITHIC

WHITE ELECTRONIC DESIGNS CORP.

9

White Electronic Designs Corporation • [phone] • www.whiteedc.com

WMS128K8-XXX

WMS128K8-XXX

DEVICE TYPE SPEED PACKAGE SMD NO.

128K x 8 SRAM Monolithic 55ns 32 lead SOJ Revol (DR) 5962-96691 05HUX
128K x 8 SRAM Monolithic 45ns 32 lead SOJ Revol (DR) 5962-96691 06HUX
128K x 8 SRAM Monolithic 35ns 32 lead SOJ Revol (DR) 5962-96691 07HUX
128K x 8 SRAM Monolithic 25ns 32 lead SOJ Revol (DR) 5962-96691 08HUX
128K x 8 SRAM Monolithic 20ns 32 lead SOJ Revol (DR) 5962-96691 09HUX
128K x 8 SRAM Monolithic 17ns 32 lead SOJ Revol (DR) 5962-96691 10HUX
128K x 8 SRAM Monolithic 15ns 32 lead SOJ Revol (DR) 5962-96691 11HUX

128K x 8 SRAM Monolithic 55ns 32 lead SOJ Evol (DE) 5962-96691 05HTX
128K x 8 SRAM Monolithic 45ns 32 lead SOJ Evol (DE) 5962-96691 06HTX
128K x 8 SRAM Monolithic 35ns 32 lead SOJ Evol (DE) 5962-96691 07HTX
128K x 8 SRAM Monolithic 25ns 32 lead SOJ Evol (DE) 5962-96691 08HTX
128K x 8 SRAM Monolithic 20ns 32 lead SOJ Evol (DE) 5962-96691 09HTX
128K x 8 SRAM Monolithic 17ns 32 lead SOJ Evol (DE) 5962-96691 10HTX
128K x 8 SRAM Monolithic 15ns 32 lead SOJ Evol (DE) 5962-96691 11HTX

128K x 8 SRAM Monolithic 55ns 32 pin DIP (C) 5962-96691 05HYX
128K x 8 SRAM Monolithic 45ns 32 pin DIP (C) 5962-96691 06HYX
128K x 8 SRAM Monolithic 35ns 32 pin DIP (C) 5962-96691 07HYX
128K x 8 SRAM Monolithic 25ns 32 pin DIP (C) 5962-96691 08HYX
128K x 8 SRAM Monolithic 20ns 32 pin DIP (C) 5962-96691 09HYX
128K x 8 SRAM Monolithic 17ns 32 pin DIP (C) 5962-96691 10HYX
128K x 8 SRAM Monolithic 15ns 32 pin DIP (C) 5962-96691 11HYX

128K x 8 SRAM Monolithic 55ns 36 lead SOJ (DJ) 5962-96691 05HZX
128K x 8 SRAM Monolithic 45ns 36 lead SOJ (DJ) 5962-96691 06HZX
128K x 8 SRAM Monolithic 35ns 36 lead SOJ (DJ) 5962-96691 07HZX
128K x 8 SRAM Monolithic 25ns 36 lead SOJ (DJ) 5962-96691 08HZX
128K x 8 SRAM Monolithic 20ns 36 lead SOJ (DJ) 5962-96691 09HZX
128K x 8 SRAM Monolithic 17ns 36 lead SOJ (DJ) 5962-96691 10HZX
128K x 8 SRAM Monolithic 15ns 36 lead SOJ (DJ) 5962-96691 11HZX

128K x 8 SRAM Monolithic 55ns 36 lead Flatpack (F) 5962-96691 05HXX
128K x 8 SRAM Monolithic 45ns 36 lead Flatpack (F) 5962-96691 06HXX
128K x 8 SRAM Monolithic 35ns 36 lead Flatpack (F) 5962-96691 07HXX
128K x 8 SRAM Monolithic 25ns 36 lead Flatpack (F) 5962-96691 08HXX
128K x 8 SRAM Monolithic 20ns 36 lead Flatpack (F) 5962-96691 09HXX
128K x 8 SRAM Monolithic 17ns 36 lead Flatpack (F) 5962-96691 10HXX
128K x 8 SRAM Monolithic 15ns 36 lead Flatpack (F) 5962-96691 11HXX

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10