Page 1

650
0.28Ω
WML
WMN
6N65FD,
6N65FD,
Super J
WMK16N
WMP16N
unctio
5FD, W
5FD, W
Power
M16N65
O16N65
MOSFE
D
D
T
Descri
WMOSTM
unction
tion
FD is W
OSFET fa
series pr
SJ-MOSF
diode. W
switching
Feature
Ultra-
Typ.
100%
Pb-fre
Applica
LED Lighti
s
ast body di
DS(on)
UIS tested
e plating,
tions
ng, Charg
Absolut
Maximu
vide all
T while o
OSTM F
pplication
=0.2
yon’s first
ily with f
enefits of
fering an
makes
more relia
de
Ω
alogen fre
, Adapter,
Ratings
generatio
st body di
a fast
xtremely f
specially
ble.
PC, LCD
n super
ode. FD
witching
st body
esonant
V, Server
TO-2
D
G
TO-2
S
D
0F T
S
3 T
oHS
c
mpliant
S
D
G
-262
S
D
G
-251
D
G
O-220
D
S
G
O-252
S
Drain-sour
Continuous
Pulsed drai
Gate-sourc
Avalanche
Avalanche
Avalanche
Power diss
Operating
Continuous
Diode puls
Thermal
Parame
e voltage
drain current
n current2)
voltage
nergy, singl
nergy, repeti
urrent, repet
pation ( TC =
- De
nd storage t
diode forwar
current
haracte
er
1)
( TC = 2
( TC = 10
pulse3)
ive2)
tive2)
5°C )
ate above 25
mperature ra
current
istics
Sym
°C )
°C )
°C
ge Tj,
bol WMK
V
D
S
I
I
D
V
S
S
E
A
R
I
A
P
st
I
I
S,
lse
WMM/WMO/
86
0.69
-5
MP/WMN
650
13
7.8
26
±30
145
0.21
2
to +150
13
26
WML
31
0.25
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
°C
A
A
Parame
Thermal re
Thermal re
Rev.3.0, 20
istance, junc
istance, junc
17
er
ion-to-case
ion-to-ambie
Sym
R
t R
bol WMK
θ
C
θ
A
Doc.W0
WMM/WMO/
1.45
62
65016
MP/WMN
WML
4
80
Unit
°C/W
°C/W
1 / 10
Page 2

WMx16N65FD
Electrical Characteristics T
Parameter Symbol Test Condition Min. Typ. Max. Unit
Static characteristics
Drain-source breakdown voltage BV
Gate threshold voltage V
Drain cut-off current I
Gate leakage current, forward I
Gate leakage current, reverse I
Drain-source on-state resistance R
Dynamic characteristics
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
= 25°C, unless otherwise noted
c
VGS=0 V, ID=0.25 mA 650 - - V
DSS
VDS=VGS, ID=0.25mA 2 3.3 4 V
GS(th
VDS=650 V, VGS=0 V,
DSS
Tj = 25°C
Tj = 125°C
VGS=30 V, VDS=0 V - - 100 nA
GSSF
VGS=-30 V, VDS=0 V - - -100 nA
GSSR
VGS=10 V, ID=2 A
DS(on)
Tj = 25°C
VDS= 25 V, VGS= 0 V,
iss
f = 1 MHz
- 595 -
oss
- 1.4 -
rss
-
-
-
-
-
100
0.28
10
-
0.34
μA
Ω
- 992 -
pF
Turn-on delay time t
Rise time tr - 17 -
Turn-off delay time t
VDD = 300V, ID = 5.5A
d(on
- 28 -
RG = 25Ω, VGS=10V
- 78 -
d(off
ns
Fall time tf - 20 -
Gate charge characteristics
Gate to source charge Q
Gate to drain charge Q
VDD=480 V, ID=5.5A,
s
VGS=0 to 10 V
- 7.8 -
d
- 4.9 -
nC
Gate charge total Qg - 19.9 -
Gate plateau voltage V
- 5.4 - V
lateau
Reverse diode characteristics
Diode forward voltage VSD VGS=0 V, IF=2A - - 1.2 V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
V
r
- 1.25 - μC
r
- 11 - A
rrm
=50 V, IF=5.5A,
R
dIF/dt=100 A/μs
- 145 - ns
Notes:
1. Limited by T
2. Repetitive rating: pulse width limited by maximum junction temperature.
3. I
= 2 A, VDD = 50V, RG = 25Ω, starting Tj = 25°C.
AS
. Maximum duty cycle D=0.5.
j max
Rev.3.0, 2017 www.way-on.com 2 / 10
Page 3

WMx16N65FD
25
(A)
D
I
Common Source
T
= 25°C
c
Pulse test
20
15
10
5
0
048121620
VDS (V)
VGS=10V
VGS=7V
VGS=6V
VGS=5.5V
VGS=5V
=4.5V
V
GS
25
Common Source
T
= 25°C
c
V
=20 V
20
15
(A)
D
I
10
5
0
DS
Pulse test
345678
VGS (V)
Figure 1.On-Region Characteristics Figure 2. Transfer Characteristics
0.8
100
0.6
(Ω)
0.4
DS(on)
R
0.2
V
GS
= 10V
0.0
0 2 4 6 8 101214161820
ID (A)
Tc = 25°C
Pulse tes
10
(A)
F
I
1
0.1
0.4 0.6 0.8 1 1.2
VSD (V)
Tc = 25°C
Pulse tes
Figure 3. Static Drain-Source On Resistance Figure 4. Body- Diode Forward Characteristics
1.2
1.1
1
(Normalized)
DSS
BV
0.9
0.8
‐60 ‐40 ‐20 0 20 40 60 80 100 120 140 160
Temperature Tj (°C)
VGS=0 V
I
DS
Pulse test
=0.25 mA
3
2.5
2
1.5
(Normalized)
DS(ON)
R
1
VGS=10 V
I
0.5
0
‐60 ‐40 ‐20 0 20 40 60 80 100 120 140 160
Temperature Tj (°C)
=2 A
DS
Pulse test
Figure 5. Normalized BV
vs. Temperature Figure 6. Normalized R
DSS
vs. Temperature
DS(on)
Rev.3.0, 2017 www.way-on.com 3 / 10
Page 4

WMx16N65FD
1.3
1.2
1.1
1
0.9
(Normalized)
0.8
GS(th)
V
0.7
0.6
I
=0.25 mA
DS
Pulse tes
0.5
‐60 ‐40 ‐20 0 20 40 60 80 100 120 140 160
Figure 7. Threshold Voltage vs. Temperature Figure 8. Capacitance Characteristics
Temperature Tj (°C)
10000
1000
100
C
= Cgs+ Cgd (C
iss
C
10
Capacitance (pF)
1
0.1
0.1 1 10 100
oss
C
= C
rss
= Cds + C
gd
Notes:
f = 1 MHz
V
GS
=0 V
gd
= shorted)
ds
VDS (V)
100
90
80
70
60
(W)
D
P
50
40
30
20
10
0
0 40 80 120 160
Temperature Tc (°C)
35
30
25
20
(W)
D
P
15
10
5
0
0 40 80 120 160
Temperature Tc (°C)
C
iss
C
oss
C
rss
Figure 9. Power Dissipation Figure 10. Power Dissipation (TO-220F)
100
10
Limited by R
(A)
D
1
I
DS(on)
100us
1ms
DC
0.1
0.01
Notes:
T
= 25°C
c
T
= 150°C
j
Single Pulse
1 10 100 1000
VDS (V)
10us
100
Limited by R
10
(A)
D
1
I
0.1
0.01
Notes:
T
T
Single Pulse
1 10 100 1000
= 25°C
c
= 150°C
j
DS(on)
1ms
DC
VDS (V)
10us
100us
Figure 11. Maximum Safe Operating Area Figure 12. Maximum Safe Operating Area(TO-220F)
Rev.3.0, 2017 www.way-on.com 4 / 10
Page 5

WMx16N65FD
1.0E+01
In descending order
D= 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pu lse
1.0E+01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pu lse
1.0E+00
1.0E+00
1.0E‐01
(Normalized)
θJC
Z
1.0E‐02
1.0E‐03
1.0E‐06 1.0E‐04 1.0E ‐02 1.0E+00
Pulse Width t (s)
Duty = t/T
Z
(t)=4°C/W Max.
θJC
Figure 13. Transient Thermal Response Curve (TO-220F) Figure 14. Transient Thermal Response Curve
1.0E‐01
(Normalized)
θJC
Z
1.0E‐02
1.0E‐03
1.0E‐06 1.0E‐05 1. 0E‐04 1.0E‐03 1.0E‐02 1.0E‐01
Pulse Width t (s)
Duty = t/T
Z
(t)=1.45°C/W Max.
θJC
10
8
V
DS
=120V
VDS=480V
6
(V)
GS
V
4
2
0
0 5 10 15 20 25
QG (nC)
Figure 15. Gate Charge Characteristics
ID = 5.5A
Rev.3.0, 2017 www.way-on.com 5 / 10
Page 6

WMx16N65FD
Gate Charge Test Circuit & Waveform
Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Rev.3.0, 2017 www.way-on.com 6 / 10
Page 7

WMx16N65FD
Mechanical Dimensions for TO-220F
A
C
J
B
E
F
D
L1
G
G
COMMON DIMENSIONS
H
I
K
L
M
SYMBOL
A 9.96 10.36
B 15.10 16.10
C 3.03 3.38
D 12.64 13.28
E 1.18 1.58
F 0.70 0.95
G 2.54REF
H 4.50 4.90
I 2.34 2.74
J 15.57 16.17
K 6.70REF
L 2.56 2.96
M 0.40 0.65
L1 2.85 3.45
MM
MIN MAX
Mechanical Dimensions for TO-263
SYMBOL
COMMON DIMENSIONS
MM
MIN MAX
A 10.00 10.40
B 1.11 1.41
C 1.25 1.55
D 5.10 5.50
E 1.12 1.42
F 0.71 0.92
G 2.39 2.69
H 4.49 4.89
I 1.17 1.37
J 8.45 8.85
K 2.54 2.84
L 0.28 0.49
Rev.3.0, 2017 www.way-on.com 7 / 10
Page 8

WMx16N65FD
Mechanical Dimensions for TO-251
C
SYMBOL
D
H
COMMON DIMENSIONS
MM
MIN MAX
A 6.40 6.80
B 5.13 5.46
C 0.88 1.28
D 5.90 6.22
E 0.68 1.10
F 0.68 0.91
G 2.29REF
H 9.00 9.65
I 0.90 1.17
J 0.40 0.61
K 2.10 2.50
Mechanical Dimensions for TO-252
SYMBOL
COMMON DIMENSIONS
MM
MIN MAX
A 6.40 6.80
B 5.13 5.50
C 0.88 1.28
D 5.90 6.22
E 0.68 1.10
F 0.68 0.91
G 2.29REF
H 2.90REF
I 0.85 1.17
J 0.51REF
K 2.10 2.50
L 0.40 1.00
Rev.3.0, 2017 www.way-on.com 8 / 10
Page 9

WMx16N65FD
Mechanical Dimensions for TO-262
A
B
M
H
SYMBOL
I
D
F
G
C
L
J
K
E
E
COMMON DIMENSIONS
MM
MIN MAX
A 10.00 10.40
B 1.11 1.41
C 13.56 14.16
D 3.58 3.98
E 2.39 2.69
F 1.07 1.47
G 0.71 0.92
H 1.17 1.37
I 8.45 8.85
J 0.28 0.49
K 0.32 0.52
L 2.54 2.85
M 4.50 4.90
Mechanical Dimensions for TO-220
C
G
F
E
J
COMMON DIMENSIONS
MM
SYMBOL
MIN MAX
A 9.70 10.20
B 3.40 3.80
C 8.90 9.40
D 1.17 1.47
E 2.60 3.40
F 15.10 16.70
G 19.55MAX
H 2.54REF
I 0.70 0.95
J 9.35 11.00
K 4.30 4.77
Rev.3.0, 2017 www.way-on.com 9 / 10
L 1.20 1.45
M 0.40 0.65
N 2.20 2.60
Page 10

WMx1
N65FD
Ordering
WM
WM
Marking
Man
Informat
Part
16N65FD
16N65FD
16N65FD
16N65FD
16N65FD
16N65FD
nformati
Wayon
ufacturing Cod
on
n
ogo
Package
TO-220F
TO-220
TO-262
TO-263
TO-252
TO-251
Wayon
WMO16N65FD
WWXX FPY
Part
Marking
WML16N65
WMK16N65
WMN16N65
WMM16N6
WMO16N65
WMP16N65
umbe
FD
FD
FD
FD
FD
FD
Packing
Tub
Tub
Tub
Tape an
Tape an
Tub
ethod
Reel
Reel
Contac
CYG WAYO
No.1001, Sh
Tel: 86-21-5
WAYON we
For addition
Disclai
CYG WAYO
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reasonably
as a guaran
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esign. The P
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ales Repres
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ithout furthe
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