Datasheet WMM16N60FD, WMM16N65C2 Specification

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WML WMN

0.27Ω

6N65C2,

16N65C2,

Super J

WMK16N

WMP16N

unctio

65C2, W 65C2, W

Power

M16N65

O16N65

MOSFE

2 2

T

Descri

tion

WMOSTM

unction

balance t

chnology f

and low g

suitable f

power den

Feature

sity and ou

s

 VDS =

 Typ.

 100%

 Pb-fre

Applica

LED Lighti

UIS tested

e plating,

tions

ng, Charg

Absolut

Maximu

C2 is W

OSFET f

te charge

applica

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=0.2

DS(on)

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Ratings

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low on-r

e. WMOS

require

fficiency.

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super

charge

sistance

TM

C2 is

superior

V, Server

TO-2

D

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TO-2

S

D

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S

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c

mpliant

S

D

G

-262

S

D

G

-251

S

D

G

O-220

D

S

G

O-252

Drain-sour

Continuous

Pulsed drai

Gate-sourc

Avalanche

Power diss

Operating

Continuous

Diode puls

Thermal

Parame

e voltage

drain current

n current2)

voltage

nergy, singl

nergy, repeti

urrent, repet

pation ( TC =

- De

nd storage t

diode forwar

current

haracte

er

1)

( TC = 2

( TC = 10

pulse3)

tive2)

5°C )

ate above 25

mperature ra

current

istics

°C )

°C

ge Tj,

Sym

bol WMK

V

D

S

I

D

V

S

E

A

R

I

A

P

st

I

S,

lse

WMM/WMO/

0.69

86

0.21

-5

to +150

MP/WMN

650

13

7.8

26

±30

145

2

13

26

WML

31

0.25

Unit

V

A

V

mJ

A

W

W/°C

°C

A

Parame

Thermal re

Rev.2.0, 20

istance, junc

17

er

ion-to-case

ion-to-ambie

Sym

R

t R

bol WMK

θ

C

θ

A

Doc.W0

WMM/WMO/

1.45

62

65005

MP/WMN

WML

4

80

Unit

°C/W

1 / 10

WMx16N65C2

)

g

p

r

Electrical Characteristics T

Parameter Symbol Test Condition Min. Typ. Max. Unit

Static characteristics

Drain-source breakdown voltage BV

Gate threshold voltage V

Drain cut-off current I

Gate leakage current, forward I

Gate leakage current, reverse I

Drain-source on-state resistance R

Dynamic characteristics

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

= 25°C, unless otherwise noted

c

VGS=0 V, ID=0.25 mA 650 - - V

DSS

VDS=VGS, ID=0.25mA 2.5 3.3 4.5 V

GS(th

VDS=650 V, VGS=0 V,

DSS

Tj = 25°C

Tj = 125°C

VGS=30 V, VDS=0 V - - 100 nA

GSSF

VGS=-30 V, VDS=0 V - - -100 nA

GSSR

VGS=10 V, ID=5.5 A

DS(on)

Tj = 25°C

VDS= 25 V, VGS= 0 V,

iss

f = 1 MHz

- 595 -

oss

- 1.4 -

rss

-

10

0.27

1

-

0.32

μA

Ω

- 992 -

pF

Turn-on delay time t

Rise time tr - 17 -

Turn-off delay time t

VDD = 300V, ID = 5.5A

d(on

- 28 -

RG = 25Ω, VGS=10V

- 78 -

d(off

ns

Fall time tf - 20 -

Gate charge characteristics

Gate to source charge Q

Gate to drain charge Q

VDD=480 V, ID=5.5A,

s

VGS=0 to 10 V

- 7.8 -

d

- 4.9 -

nC

Gate charge total Qg - 19.9 -

Gate plateau voltage V

- 5.4 - V

lateau

Reverse diode characteristics

Diode forward voltage VSD VGS=0 V, IF=5.5A - - 1.2 V

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

V

r

- 2.07 - μC

r

- 16 - A

rrm

=50 V, IF=5.5A,

R

dIF/dt=100 A/μs

- 264 - ns

Notes:

1. Limited by T

2. Repetitive rating: pulse width limited by maximum junction temperature.

3. I

= 2 A, VDD = 50V, RG = 25Ω, starting Tj = 25°C.

AS

. Maximum duty cycle D=0.5.

j max

Rev.2.0, 2017 www.way-on.com 2 / 10

WMx16N65C2

t

25

(A)

D

I

Common Source T

= 25°C

c

Pulse test

20

15

10

5

0

048121620

VDS (V)

VGS=10V

VGS=7V

VGS=6V

VGS=5.5V

VGS=5V

=4.5V

V

GS

25

Common Source T

= 25°C

c

V

=20 V

20

15

(A)

D

I

10

5

0

DS

Pulse test

345678

VGS (V)

Figure 1.On-Region Characteristics Figure 2. Transfer Characteristics

0.8

100

0.6

(Ω)

0.4

DS(on)

R

0.2

V

GS

= 10V

0.0

0 2 4 6 8 101214161820

ID (A)

Tc = 25°C Pulse tes

10

(A)

F

I

1

0.1

0.4 0.6 0.8 1 1.2

VSD (V)

Tc = 25°C Pulse tes

Figure 3. Static Drain-Source On Resistance Figure 4. Body- Diode Forward Characteristics

1.2

1.1

1

(Normalized)

DSS

BV

0.9

0.8

‐60 ‐40 ‐20 0 20 40 60 80 100 120 140 160

Temperature Tj (°C)

VGS=0 V I

DS

Pulse test

=0.25 mA

3

2.5

2

1.5

(Normalized)

DS(ON)

R

1

VGS=10 V I

0.5

0

‐60 ‐40 ‐20 0 20 40 60 80 100 120 140 160

Temperature Tj (°C)

=5.5 A

DS

Pulse test

Figure 5. Normalized BV

vs. Temperature Figure 6. Normalized R

DSS

vs. Temperature

DS(on)

Rev.2.0, 2017 www.way-on.com 3 / 10

WMx16N65C2

t

1.3

1.2

1.1

1

0.9

(Normalized)

0.8

GS(th)

V

0.7

0.6

I

=0.25 mA

DS

Pulse tes

0.5

‐60 ‐40 ‐20 0 20 40 60 80 100 120 140 160

Figure 7. Threshold Voltage vs. Temperature Figure 8. Capacitance Characteristics

Temperature Tj (°C)

10000

1000

100

C

= Cgs+ Cgd (C

iss

C

10

Capacitance (pF)

1

0.1

0.1 1 10 100

oss

C

= C

rss

= Cds + C

gd

Notes: f = 1 MHz V

GS

=0 V

gd

= shorted)

ds

VDS (V)

100

90

80

70

60

(W)

D

P

50

40

30

20

10

0

0 40 80 120 160

Temperature Tc (°C)

35

30

25

20

(W)

D

P

15

10

5

0

0 40 80 120 160

Temperature Tc (°C)

C

iss

C

oss

C

rss

Figure 9. Power Dissipation Figure 10. Power Dissipation (TO-220F)

100

10

Limited by R

(A)

D

1

I

DS(on)

100us

1ms

DC

0.1

0.01

Notes: T

= 25°C

c

T

= 150°C

j

Single Pulse

1 10 100 1000

VDS (V)

10us

100

Limited by R

10

(A)

D

1

I

0.1

0.01

Notes: T

T Single Pulse

1 10 100 1000

= 25°C

c

= 150°C

j

DS(on)

1ms

DC

VDS (V)

10us

100us

Figure 11. Maximum Safe Operating Area Figure 12. Maximum Safe Operating Area(TO-220F)

Rev.2.0, 2017 www.way-on.com 4 / 10

WMx16N65C2

1.0E+01

In descending order D= 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pu lse

1.0E+01

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pu lse

1.0E+00

1.0E‐01

(Normalized)

θJC

Z

1.0E‐02

1.0E‐03

1.0E‐06 1.0E‐04 1.0E ‐02 1.0E+00

Pulse Width t (s)

Duty = t/T

Z

(t)=4°C/W Max.

θJC

Figure 13. Transient Thermal Response Curve (TO-220F) Figure 14. Transient Thermal Response Curve

1.0E‐01

(Normalized)

θJC

Z

1.0E‐02

1.0E‐03

1.0E‐06 1.0E‐05 1. 0E‐04 1.0E‐03 1.0E‐02 1.0E‐01

Pulse Width t (s)

Duty = t/T

Z

(t)=1.45°C/W Max.

θJC

10

8

V

DS

=120V

VDS=480V

6

(V)

GS

V

4

2

0

0 5 10 15 20 25

QG (nC)

Figure 15. Gate Charge Characteristics

ID = 5.5A

Rev.2.0, 2017 www.way-on.com 5 / 10

WMx16N65C2

Gate Charge Test Circuit & Waveform



Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Rev.2.0, 2017 www.way-on.com 6 / 10

WMx16N65C2

Mechanical Dimensions for TO-220F

A

C

J

B

E

F

D

L1

G

COMMON DIMENSIONS

H

I

K

L

M

SYMBOL

A 9.96 10.36

B 15.10 16.10

C 3.03 3.38

D 12.64 13.28

E 1.18 1.58

F 0.70 0.95

G 2.54REF

H 4.50 4.90

I 2.34 2.74

J 15.57 16.17

K 6.70REF

L 2.56 2.96

M 0.40 0.65

L1 2.85 3.45

MM

MIN MAX

Mechanical Dimensions for TO-263



SYMBOL



COMMON DIMENSIONS

MM

MIN MAX

A 10.00 10.40

B 1.11 1.41

C 1.25 1.55

D 5.10 5.50

E 1.12 1.42

F 0.71 0.92

G 2.39 2.69

H 4.49 4.89

I 1.17 1.37

J 8.45 8.85

K 2.54 2.84

L 0.28 0.49

Rev.2.0, 2017 www.way-on.com 7 / 10

WMx16N65C2

Mechanical Dimensions for TO-251



C

SYMBOL



D

H

COMMON DIMENSIONS

MM

MIN MAX

A 6.40 6.80

B 5.13 5.46

C 0.88 1.28

D 5.90 6.22

E 0.68 1.10

F 0.68 0.91

G 2.29REF

H 9.00 9.65

I 0.90 1.17

J 0.40 0.61

K 2.10 2.50

Mechanical Dimensions for TO-252



SYMBOL



COMMON DIMENSIONS

MM

MIN MAX

A 6.40 6.80

B 5.13 5.50

C 0.88 1.28

D 5.90 6.22

E 0.68 1.10

F 0.68 0.91

G 2.29REF

H 2.90REF

I 0.85 1.17

J 0.51REF

K 2.10 2.50

L 0.40 1.00

Rev.2.0, 2017 www.way-on.com 8 / 10

WMx16N65C2

Mechanical Dimensions for TO-262



A

B

M

H

SYMBOL

I

D

F

G

C

L

J

K

E

COMMON DIMENSIONS

MM

MIN MAX

A 10.00 10.40

B 1.11 1.41

C 13.56 14.16

D 3.58 3.98

E 2.39 2.69

F 1.07 1.47

G 0.71 0.92

H 1.17 1.37

I 8.45 8.85

J 0.28 0.49

K 0.32 0.52

L 2.54 2.85

M 4.50 4.90

Mechanical Dimensions for TO-220

C

G

F

E

J

COMMON DIMENSIONS

MM

SYMBOL

MIN MAX

A 9.70 10.20

B 3.40 3.80

C 8.90 9.40

D 1.17 1.47

E 2.60 3.40

F 15.10 16.70

G 19.55MAX

H 2.54REF

I 0.70 0.95

J 9.35 11.00

K 4.30 4.77

Rev.2.0, 2017 www.way-on.com 9 / 10

L 1.20 1.45

M 0.40 0.65

N 2.20 2.60

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N65C2

Ordering

WM

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Man

Informat

Part

16N65C2

nformati

Wayon

ufacturing Cod

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n

ogo

Package

TO-220F

TO-220

TO-262

TO-263

TO-252

TO-251

Wayon

WMO16N65C2

WWXX FPY

Part

Marking

WML16N65

WMK16N65

WMN16N65

WMM16N6

WMO16N6

WMP16N65

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Contac

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