Datasheet WF4M32-150G4TM5A, WF4M32-150G4TM5, WF4M32-150G4TI5A, WF4M32-150G4TI5, WF4M32-150G4TC5A Datasheet (White Electronic Designs)
...Page 1
White Electronic Designs
A
WF4M32-XXX5
4MX32 5V FLASH MODULE, SMD 5962-97612 (pending)
FEATURES
n Access Times of 100, 120, 150ns
n Packaging:
• 66 pin, PGA Type, 1.385" square, Hermetic
Ceramic HIP (Package 402).
• 68 lead, 40mm Low Profile CQFP ( Package
502 ), 3.5mm (0.140") height.
• 68 lead, Hermetic CQFP (G2T), 22.4mm
(0.880") square (Package 509) 4.57mm
(0.180") height. Designed to fit JEDEC 68
lead 0.990CQFJ footprint (Fig. 3)
n Sector Architecture
• 32 equal size sectors of 64KBytes per each
2Mx8 chip
• Any combination of sectors can be erased. Also
supports full chip erase.
n Minimum 100,000 Write/Erase Cycles Minimum
FIG. 1 PIN CONFIGURATION FOR WF4M32-XH2X5
TOP VIEW
1 12 23 34 45 56
RESET
I/O
I/O
8
CS
I/O
9
GND
I/O
10
I/O
A
14
A
10
A
16
A
9
A
11
A
15
A
0
V
CC
A
18
CS
I/O
0
A
19
I/O
1
I/O
I/O
2
11 22 33 44 55 66
15
2
I/O
14
I/O
13
11
I/O
12
OE
17
A
WE
7
I/O
1
I/O
6
I/O
5
3
I/O
4
I/O
24
I/O
25
I/O
26
A
7
A
12
A
21
A
13
A
8
I/O
16
I/O
17
I/O
18
V
CS
I/O
A20
CS
GND
I/O
NC
CC
I/O
31
4
I/O
30
I/O
29
27
I/O
28
A
4
A
1
A
5
A
2
A
6
A
3
I/O
23
3
I/O
22
I/O
21
19
I/O
20
n Organized as 4Mx32
n User configurable as 8Mx16 or 16Mx8 in HIP and
G4T packages.
n Commercial, Industrial, and Military Temperature Ranges
n 5 Volt Read and Write. 5V ± 10% Supply.
n Low Power CMOS
n Data Polling and Toggle Bit feature for detection of
program or erase cycle completion.
n Supports reading or programming data to a sector
not being erased.
n RESET pin resets internal state machine to the read
mode.
n Built-in Decoupling Caps and Multiple Ground
Pins for Low Noise Operation, Separate Power
and Ground Planes to improve noise immunity
*This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
Note:
For programming information refer to Flash Programming 16M5 Application Note.
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-21 Address Inputs
WE Write Enables
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
RESET Reset
BLOCK DIAGRAM
CS
A
21
OE
WE
0-20
RESET
1
2M x 8
CS
2
2M x 8
2M
x 8
I/O
2M
I/O
0-7
PRELIMINARY*
CS
x 8
8-15
3
2Mx 8
CS
4
2M x 8
2M
x 8
I/O
16-23
2M
x 8
I/O
24-31
August 2002 Rev. 4
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
Page 2
White Electronic Designs
A
WF4M32-XXX5
FIG. 2 PIN CONFIGURATION FOR WF4M32-XG4TX5
TOP VIEW
A21
CC
NC
RESET
60
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
NC
A0A1A2A3A4A5CS1GND
CS3WE
A6A7A8A9A10V
9 8 7 6 5 4 3 2 1 6 8 67 66 65 64 63 62 61
0
10
1
11
2
12
3
13
4
14
5
15
6
16
7
17
18
8
19
9
20
10
21
11
22
12
23
13
24
14
25
15
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
2
4
CC
A11A12A13A14A15A
V
16
18A19A20
OE
A17A
CS
CS
21
A
RESET
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-21 Address Inputs
WE Write Enable
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
RESET Reset
GND Ground
NC Not Connected
BLOCK DIAGRAM
CS
1
OE
WE
BUFFER
0-20
2M x 8
CS
2
2M x 8
2M
x 8
I/O
0-7
CS
3
2M x 8
2M
x 8
I/O
8-15
CS
4
2M x 8
2M
x 8
I/O
16-23
2M
x 8
I/O
24-31
FIG. 3 PIN CONFIGURATION FOR WF4M32-XG2TX5
TOP VIEW
18A19A20
A
CC
60
I/O
16
59
I/O
17
58
I/O
18
57
I/O
19
56
I/O
20
55
I/O
21
54
I/O
22
53
I/O
23
52
GND
51
24
I/O
50
I/O
25
49
I/O
26
48
I/O
27
47
I/O
28
46
I/O
29
45
I/O
30
44
I/O
31
The White 68 lead G2T CQFP
fills the same fit and function
as the JEDEC 68 lead CQFJ or
68 PLCC. But the G2T has the
TCE and lead inspection
advantage of the CQFP form.
CS
1
RESET
WE
OE
A
0-20
2M x 8
2M x 8
8
CS
2
I/O
0-7
BLOCK DIAGRAM
2
RESET
A0A1A2A3A4A5NC
GNDNCWE
A6A7A8A9A10V
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
0
I/O
11
I/O
1
12
I/O
2
13
I/O
3
14
I/O
4
15
I/O
5
16
I/O
6
17
I/O
7
18
GND
19
8
I/O
20
I/O
9
21
I/O
10
22
I/O
11
23
I/O
12
24
I/O
13
25
I/O
14
26
I/O
15
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
CC
A11A12A13A14A15A
V
1
16
OE
CS
2
17
NCNCNC
A
CS
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-20 Address Inputs
WE Write Enables
CS1-2 Banks Selects
OE Output Enable
VCC Power Supply
GND Ground
RESET Reset
2M x 8
8
I/O
8-15
Note:
2M x 8
2M x 8
2M x 8
8
I/O
16-23
CS1& CS2 are used as bank select
I/O
2M x 8
8
2M x 8
24-31
Page 3
White Electronic Designs
WF4M32-XXX5
ABSOLUTE M AXIMUM RATINGS
Parameter Symbol Ratings Unit
Voltage on Any Pin Relative to VSS VT -2.0 to +7.0 V
Power Dissipation PT 8W
Storage Temperature Tstg -65 to +125 °C
Short Circuit Output Current IOS 100 mA
Endurance - Write/Erase Cycles 100,000 min cycles
(Mil Temp)
Data Retention (Mil Temp) 20 years
(TA = +25°C, VIN = OV, F = 1.0MHZ)
Parameter
OE capacitance COE 75 75 20
WE capacitance CWE 75 75 20
CS capacitance CCS 20 50 20
Data I/O capacitance CI/O 30 30 30
Address input capacitance C
This parameter is guaranteed by design but not tested.
CAPACITANCE (PF)
Symbol
HIP (H2) CQFP (G2T) CQFP( G4T)
AD 75 75 20
RECOMMENDED DC OPERATING C ONDITIONS
Parameter Symbol Min Typ Max Unit
Supply Voltage VCC 4.5 5.0 5.5 V
Ground VSS 00 0V
Input High Voltage VIH 2.0 - VCC + 0.5 V
Input Low Voltage VIL -0.5 - +0.8 V
Operating Temperature (Mil.) T A - 55 - +125 °C
Operating Temperature (Ind.) T
A -40 - +85 °C
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)
Parameter Symbol Conditions HIP G2T G4T Unit
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 10 10 µA
Output Leakage Current I LOx32 VCC = 5.5, VIN = GND to VCC 10 10 10 µA
VCC Active Current for Read (1) ICC1 CS = VIL , OE = VIH, f = 5MHz 320 215 345 mA
VCC Active Current for Program I CC2 CS = VIL, OE = VIH 420 295 445 mA
or Erase (2)
VCC Standby Current I CC3 VCC = 5.5, CS = VIH, f = 5MHz, RESET = VIH 20 2.0 95 mA
Output Low Voltage VOL IOL = 12.0 mA, VCC = 4.5 0.45 0.45 0.45 V
Output High Voltage VOH IOH = -2.5 mA, VCC = 4.5 0.85 x 0.85 x 0.85 x V
Low VCC Lock-Out Voltage VLKO 3.2 4.2 3.2 4.2 3.2 4.2 V
NOTES:
1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The
frequency component typically is less than 2mA/MHz, with OE at V
2. Icc active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions V
IL = 0.3V, VIH = VCC - 0.3V
IH.
Min Max Min Max Min Max
Vcc Vcc Vcc
HIP = 66 pin, PGA Type, 1.385" square, Hermetic
Ceramic HIP (Package 402).
G2T = 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880")
square. Designed to fit JEDEC 68 lead 0.990" CQFJ
footprint (Fig. 3) (Package 509)
G4T = 68 lead, 40mm Low Profile CQFP, 3.5mm (0.140")
(Package 502 )
3
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Page 4
White Electronic Designs
WF4M32-XXX5
AC CHARACTERISTICS FOR G2T PACKAGE WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED
(VCC = 5.0V, TA = -55°C TO +125°C)
Parameter Symbol -100 -120 -150 Unit
Min Max Min Max Min Max
Write Cycle Time tAVAV tWC 100 120 150 ns
Chip Select Setup Time tELWL tCS 000 ns
Write Enable Pulse Width tWLWH tWP 45 50 50 ns
Address Setup Time tAVWL tAS 000 ns
Data Setup Time tDVWH tDS 45 50 50 ns
Data Hold Time tWHDX tDH 000 ns
Address Hold Time tWLAX tAH 45 50 50 ns
Write Enable Pulse Width High tWHWL tWPH 20 20 20 ns
Duration of Byte Programming Operation (1) tWHWH1 300 300 300 µs
Sector Erase (2) tWHWH2 15 15 15 sec
Read Recovery Time before Write tGH
VCC Setup Time tVCS 50 50 50 µs
Chip Programming Time 44 44 44 sec
Chip Erase Time (3) 256 256 256 sec
Output Enable Hold Time (4) tOEH 10 10 10 ns
RESET Pulse Width t
NOTES:
1. Typical value for tWHWH1 is 7µs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
W
L 000 µs
RP 500 500 500 ns
AC CHARACTERISTICS FOR G2T PACKAGE R EAD-ONLY OPERATIONS
(VCC = 5.0V, TA = -55°C TO +125°C)
Parameter Symbol -100 -120 -150 U ni t
Read Cycle Time tAVAV tRC 100 120 150 ns
Address Access Time tAVQV tACC 100 120 150 ns
Chip Select Access Time tELQV tCE 100 120 150 ns
Output Enable to Output Valid tGLQV tOE 40 50 55 ns
Chip Select High to Output High Z (1) tEHQZ tDF 20 30 35 ns
Output Enable High to Output High Z (1) tGHQZ tDF 20 30 35 ns
Output Hold from Addresses, CS or OE Change, t
whichever is First
RST Low to Read Mode (1) t
1. Guaranteed by design, not tested.
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
AXQX tOH 000ns
Min Max Min Max Min Max
Ready 20 20 20 µs
4
Page 5
White Electronic Designs
WF4M32-XXX5
AC CHARACTERISTICS FOR G2T PACKAGE WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)
Parameter Symbol -100 -120 -150 Un it
Min Max Min Max Min Max
Write Cycle Time tAVAV tWC 100 120 150 ns
Write Enable Setup Time tWLEL tWS 000ns
Chip Select Pulse Width tELEH tCP 45 50 50 ns
Address Setup Time tAVEL tAS 000ns
Data Setup Time tDVEH tDS 45 50 50 ns
Data Hold Time tEHDX tDH 000ns
Address Hold Time tELAX tAH 45 50 50 ns
Chip Select Pulse Width High tEHEL tCPH 20 20 20 ns
Duration of Byte Programming Operation (1) t WHWH1 300 300 300 µs
Sector Erase Time (2) tWHWH2 15 15 15 sec
Read Recovery Time tGHEL 000µs
Chip Programming Time 44 44 44 sec
Chip Erase Time (3) 256 256 256 sec
Output Enable Hold Time (4) t
NOTES:
1. Typical value for tWHWH1 is 7µs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
OEH 10 10 10 ns
5
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Page 6
White Electronic Designs
WF4M32-XXX5
AC CHARACTERISTICS FOR G4T AND H2 PACKAGES WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED
(VCC = 5.0V, TA = -55°C TO +125°C)
Parameter Symbol -100 -120 -150 Unit
Min Max Min Max Min Max
Write Cycle Time tAVAV tWC 100 120 150 ns
Chip Select Setup Time tELWL tCS 000 ns
Write Enable Pulse Width tWLWH tWP 45 50 50 ns
Address Setup Time tAVWL tAS 000 ns
Data Setup Time tDVWH tDS 45 50 50 ns
Data Hold Time tWHDX tDH 15 15 15 ns
Address Hold Time (1) tWLAX tAH 45 50 50 ns
Write Enable Pulse Width High (2) tWHWL tWPH 20 20 20 ns
Duration of Byte Programming Operation (3) tWHWH1 300 300 300 µs
Sector Erase (4) tWHWH2 15 15 15 sec
Read Recovery Time before Write tGH
VCC Setup Time tVCS 50 50 50 µs
Chip Programming Time 44 44 44 sec
Chip Erase Time (5) 256 256 256 sec
Output Enable Hold Time (6) tOEH 10 10 10 ns
RESET Pulse Width t
NOTES:
1. A21 must be held constant until WE or CS go high, whichever occurs first.
2. Guaranteed by design, but not tested.
3. Typical value for tWHWH1 is 7µs.
4. Typical value for tWHWH2 is 1sec.
5. Typical value for Chip Erase Time is 32sec.
6. For Toggle and Data Polling.
W
L 000 µs
RP 500 500 500 ns
AC CHARACTERISTICS FOR G4T AND H2 PACKAGES READ-ONLY OPERATIONS
(VCC = 5.0V, TA = -55°C TO +125°C)
Parameter Symbol -100 -120 -150 Unit
Read Cycle Time tAVAV tRC 100 120 150 ns
Address Access Time tAVQV tACC 100 120 150 ns
Chip Select Access Time tELQV tCE 100 120 150 ns
Output Enable to Output Valid tGLQV tOE 50 50 55 ns
Chip Select High to Output High Z tEHQZ tDF 40 45 45 ns
Output Enable High to Output High Z tGHQZ tDF 40 45 45 ns
Output Hold from Addresses, CS or OE Change, t
whichever is First
RST Low to Read Mode t
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
AXQX tOH 000ns
Min Max Min Max Min Max
Ready 20 20 20 µs
6
Page 7
White Electronic Designs
WF4M32-XXX5
AC CHARACTERISTICS FOR G4T AND H2 PACKAGES WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)
Parameter Symbol
Write Cycle Time tAVAV tWC 100 120 150 ns
Write Enable Setup Time tWLEL tWS 000ns
Chip Select Pulse Width tELEH tCP 45 50 50 ns
Address Setup Time tAVEL tAS 000ns
Data Setup Time tDVEH tDS 45 50 50 ns
Data Hold Time tEHDX tDH 15 15 15 ns
Address Hold Time (1) tELAX tAH 45 50 50 ns
Chip Select Pulse Width High tEHEL tCPH 20 20 20 ns
Duration of Byte Programming Operation (2) t WHWH1 300 300 300 µs
Sector Erase Time (3) tWHWH2 15 15 15 sec
Read Recovery Time tGHEL 000µs
Chip Programming Time 44 44 44 sec
Chip Erase Time (4) 256 256 256 sec
Output Enable Hold Time (5) t
NOTES:
1. A21 must be held constant until WE or CS go high, whichever occurs first.
2. Typical value for tWHWH1 is 7µs.
3. Typical value for tWHWH2 is 1sec.
4. Typical value for Chip Erase Time is 32sec.
5. For Toggle and Data Polling.
OEH 10 10 10 ns
FIG. 4 AC TEST CIRCUIT
-100 -120 -150 Unit
Min Max Min Max Min Max
AC TEST CONDITIONS
Parameter Typ Unit
Input Pulse Levels
Input Rise and Fall 5 ns
Input and Output Reference Level 1.5 V
Output Timing Reference Level 1.5 V
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
VZ is typically the midpoint of VOH and VOL.
IOL & IOH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
W
.
VIL = 0, VIH = 3.0
V
FIG. 5 RESET T IMING DIAGRAM
RESET
t
RP
tReady
7
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Page 8
White Electronic Designs
FIG. 6 AC WAVEFORMS F OR READ OPERATIONS
WF4M32-XXX5
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
8
Page 9
White Electronic Designs
FIG. 7 WRITE/ERASE/PROGRAM OPERATION, WE CONTROLLED
WF4M32-XXX5
NOTES:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D
7 is the output of the complement of the data written to each chip.
4. D
OUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
9
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Page 10
White Electronic Designs
FIG. 8 AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS
WF4M32-XXX5
NOTE:
1. SA is the sector address for Sector Erase.
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
10
Page 11
White Electronic Designs
WF4M32-XXX5
FIG. 9 AC WAVEFORMS FOR DATA POLLING DURING EMBEDDED A LGORITHM OPERATIONS
High Z
DF
t
OH
t
D7 =
Valid Data
D7
D0-D7
Valid Data
CH
t
CS
OE
t
OE
OEH
t
WE
CE
t
D7
Data
D0-D6 = Invalid
WHWH 1 or 2
t
D0-D6
11
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Page 12
White Electronic Designs
FIG. 10 ALTERNATE CS CONTROLLED PROGRAMMING OPERATION TIMINGS
WF4M32-XXX5
Notes:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. D
7
is the output of the complement of the data written to each chip.
4. D
OUT is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
12
Page 13
White Electronic Designs
PACKAGE 402: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H2)
WF4M32-XXX5
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
13
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Page 14
White Electronic Designs
PACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)
WF4M32-XXX5
The White 68 lead G2T CQFP
fills the same fit and function
as the JEDEC 68 lead CQFJ or
68 PLCC. But the G2T has the
TCE and lead inspection
advantage of the CQFP form.
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
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14
Page 15
White Electronic Designs
ORDERING INFORMATION
W F 4M32 - XXX X X 5 X
WF4M32-XXX5
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
PP
PROGRAMMING VOLTAGE
V
5 = 5 V
DEVICE GRADE:
M =Military Screened -55°C to +125°C
I =Industrial -40°C to +85°C
C =Commercial 0°C to +70°C
PACKAGE TYPE:
H2 =Ceramic Hex In line Package, HIP (Package 402)
G4T = 40mm Low Profile CQFP (Package 502)
G2T = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509)
ACCESS TIME (ns)
ORGANIZATION, 4M x 32
User configurable as 8M x 16 or 16M x 8 in HIP and G4T packages
FLASH
WHITE ELECTRONIC DESIGNS CORP.
DEVICE TYPE SECTOR SIZE SPEED PACKAGE SMD NO.
4M x 32 5V Flash Module 64KByte 150ns 66 pin HIP (H2) 5962-97612 01HXX*
4M x 32 5V Flash Module 64KByte 120ns 66 pin HIP (H2) 5962-97612 02HXX*
4M x 32 5V Flash Module 64KByte 100ns 66 pin HIP (H2) 5962-97612 03HXX*
4M x 32 5V Flash Module 64KByte 150ns 68 lead CQFP Low Profile (G4T) 5962-97612 01HXX*
4M x 32 5V Flash Module 64KByte 120ns 68 lead CQFP Low Profile (G4T) 5962-97612 02HXX*
4M x 32 5V Flash Module 64KByte 100ns 68 lead CQFP Low Profile (G4T) 5962-97612 03HXX*
4M x 32 5V Flash Module 64KByte 150ns 68 lead CQFP Low Profile (G2T) 5962-97612 01HXX*
4M x 32 5V Flash Module 64KByte 120ns 68 lead CQFP Low Profile (G2T) 5962-97612 02HXX*
4M x 32 5V Flash Module 64KByte 100ns 68 lead CQFP Low Profile (G2T) 5962-97612 03HXX*
*Pending
15
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