Datasheet WF2M32U-150HI5A, WF2M32U-150HI5, WF2M32U-150HC5A, WF2M32U-150HC5, WF2M32U-150G2UM5A Datasheet (White Electronic Designs)

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Page 1
1
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
HI-RELIABILITY PRODUCT
WF2M32-XXX5
FIG. 1 PIN CONFIGURATION FOR WF2M32-XHX5
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-20 Address Inputs
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
I/O
8
I/O
9
I/O
10
A
14
A
16
A
11
A
0
A
18
I/O
0
I/O
1
I/O
2
WE
2
CS
2
GND
I/O
11
A
10
A
9
A
15
V
CC
CS
1
A
19
I/O
3
I/O
15
I/O
14
I/O
13
I/O
12
OE
A
17
WE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
7
A
12
A
20
A
13
A
8
I/O
16
I/O
17
I/O
18
V
CC
CS
4
WE
4
I/O
27
A
4
A
5
A
6
WE
3
CS
3
GND
I/O
19
I/O
31
I/O
30
I/O
29
I/O
28
A
1
A
2
A
3
I/O
23
I/O
22
I/O
21
I/O
20
11 22 33 44 55 66
1 12 23 34 45 56
TOP VIEW
BLOCK DIAGRAM
2M x 8
8
I/O
0-7
WE CS
1
1
2M x 8
8
I/O
8-15
WE CS
2
2
2M x 8
8
I/O
16-23
WE CS
3
3
2M x 8
8
I/O
24-31
WE CS
4
4
A0-
20
OE
2Mx32 5V FLASH MODULE, SMD 5962-97531 (pending)
PRELIMINARY*
Commercial, Industrial, and Military Temperature Ranges
5 Volt Read and Write. 5V ± 10% Supply.
Low Power CMOS
Data Polling and Toggle Bit feature for detection of program
or erase cycle completion.
Supports reading or programming data to a sector not being erased.
RESET pin resets internal state machine to the read mode.
Built in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation, Separate Power and Ground Planes to improve noise immunity
* This data sheet describes a product under development, not fully
characterized, and is subject to change without notice. Note: For programming information refer to Flash Programming 16M5
Application Note.
FEATURES
Access Time of 90, 120, 150ns
Packaging:
• 66 pin, PGA Type, 1.185" square, Hermetic Ceramic HIP (Package 401).
• 68 lead, Hermetic CQFP (G2U), 22.4mm (0.880") square (Package 510) 3.56mm (0.140") height. Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 3)
Sector Architecture
• 32 equal size sectors of 64KBytes per each 2Mx8 chip
• Any combination of sectors can be erased. Also supports full chip erase.
Minimum 100,000 Write/Erase Cycles Minimum
Organized as 2Mx32
RESET internally tied to Vcc in the HIP package for this pin configuration. See Alternate Pin Configuration with RESET tied to pin 12 for system control of reset (Fig. 10, page 11)
October 1999 Rev.3
Page 2
2
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
PIN DESCRIPTION
FIG. 2 PIN CONFIGURATION FOR WF2M32-XG2UX5
BLOCK DIAGRAM
TOP VIEW
The White 68 lead G2U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2U has the TCE and lead inspection advantage of the CQFP form.
2M x 8
8
I/O
0-7
2M x 8
8
I/O
8-15
2M x 8
8
I/O
16-23
2M x 8
8
I/O
24-31
A
0-20
OE
RESET
CS
1
CS
2
CS
3
CS
4
WE
3
WE
2
WE
1
WE
4
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
V
CC
A11A12A13A14A15A
16
CS
1
OE
CS
2
A
17
WE2WE3WE
4
A
18
A19A
20
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
RESET
A0A1A2A3A4A5CS3GND
CS4WE1A6A7A8A9A10V
CC
I/O0-31 Data Inputs/Outputs
A0-20 Address Inputs
WE1-4 Write Enables
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
RESET Reset
0.940"
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White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Voltage on Any Pin Relative to VSS VT -2.0 to +7.0 V Power Dissipation PT 8W Storage Temperature Tstg -65 to +125 °C Short Circuit Output Current IOS 100 mA
Endurance - Write/Erase Cycles 100,000 min cycles (Mil Temp)
Data Retention (Mil Temp) 20 years
RECOMMENDED DC OPERATING CONDITIONS
Parameter Symbol Min Typ Max Unit
Supply Voltage VCC 4.5 5.0 5.5 V Ground VSS 00 0V Input High Voltage VIH 2.0 - VCC + 0.5 V Input Low Voltage VIL -0.5 - +0.8 V Operating Temperature (Mil.) TA -55 - +125 °C Operating Temperature (Ind.) T
A -40 - +85 °C
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
NOTES:
1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The frequency component typically is less than 2mA/MHz, with OE at VIH.
2. Icc active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions V
IL = 0.3V, VIH = VCC - 0.3V
Parameter Symbol Conditions Min Max Unit
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA Output Leakage Current ILOx32 VCC = 5.5, V IN = GND to VCC 10 µA VCC Active Current for Read (1) ICC1 CS = V IL, OE = VIH, f = 5MHz 160 mA VCC Active Current for Program or Erase (2) I CC2 CS = VIL, OE = VIH 240 mA VCC Standby Current ICC3 VCC = 5.5, CS = VIH, f = 5MHz, RESET = Vcc ± 0.3V 8.0 mA Output Low Voltage VOL IOL = 12.0 mA, VCC = 4.5 0.45 V Output High Voltage VOH IOH = -2.5 mA, VCC = 4.5 0.85xVcc V Low VCC Lock-Out Voltage VLKO 3.2 4.2 V
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions Max Unit
OE capacitance COE
VIN = 0 V, f = 1.0 MHz
50 pF
WE
1-4 capacitance CWEVIN
= 0 V, f = 1.0 MHz
pF HIP (PGA) 20 HIP (Alternate pinout) 50 CQFP G4T 50 CQFP G2U 20 G2 (Alternate pinout) 50
CS1-4 capacitance CCS
VIN = 0 V, f = 1.0 MHz
20 pF
Data I/O capacitance CI/O
V
I/O
= 0 V, f = 1.0 MHz
20 pF
Address input capacitance C
ADVIN
= 0 V, f = 1.0 MHz
50 pF
This parameter is guaranteed by design but not tested.
Page 4
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White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED
(V
CC = 5.0V, TA = -55°C to +125°C)
Parameter Symbol -90 -120 -150 Unit
Min Max Min Max Min Max
Write Cycle Time tAVAV tWC 90 120 150 ns Chip Select Setup Time tELWL tCS 000ns Write Enable Pulse Width tWLWH tWP 45 50 50 ns Address Setup Time tAVWL tAS 000ns Data Setup Time tDVWH tDS 45 50 50 ns Data Hold Time tWHDX tDH 000ns Address Hold Time tWLAX tAH 45 50 50 ns Write Enable Pulse Width High tWHWL tWPH 20 20 20 ns Duration of Byte Programming Operation (1) tWHWH1 300 300 300 µs Sector Erase (2) tWHWH2 15 15 15 sec Read Recovery Time before Write tGH
W
L 000µs
VCC Setup Time tVCS 50 50 50 µs Chip Programming Time 44 44 44 sec Chip Erase Time (3) 256 256 256 sec Output Enable Hold Time (4) tOEH 10 10 10 ns RESET Pulse Width (5) t
RP 500 500 500 ns
NOTES:
1. Typical value for t
WHWH1 is 7µs.
2. Typical value for t
WHWH2 is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
5. RESET internally tied to Vcc for the default pin configuration in the HIP package.
AC CHARACTERISTICS – READ-ONLY OPERATIONS
(V
CC = 5.0V, TA = -55°C to +125°C)
Parameter Symbol -90 -120 -150 Unit
Min Max Min Max Min Max
Read Cycle Time tAVAV tRC 90 120 150 ns Address Access Time tAVQV tACC 90 120 150 ns Chip Select Access Time tELQV tCE 90 120 150 ns Output Enable to Output Valid tGLQV tOE 40 50 55 ns Chip Select High to Output High Z (1) tEHQZ tDF 20 30 35 ns Output Enable High to Output High Z (1) tGHQZ tDF 20 30 35 ns Output Hold from Addresses, CS or OE Change, t
AXQX tOH 000ns
whichever is First RST Low to Read Mode (1,2) t
Ready 20 20 20 µs
1. Guaranteed by design, not tested.
2. RESET internally tied to Vcc for the default pin configuration in the HIP package.
Page 5
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White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
CS
WE
RY/BY
RESET
t
RP
The rising edge of the last WE signal
Entire programming or erase operations
t
Ready
t
BUSY
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(V
CC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
FIG. 3
AC TEST CIRCUIT
AC TEST CONDITIONS
NOTES:
V
Z is programmable from -2V to +7V.
I
OL & IOH programmable from 0 to 16mA.
Tester Impedance Z
0 = 75 Ω.
V
Z is typically the midpoint of VOH and VOL.
I
OL & IOH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter Typ Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V ≈ 1.5V (Bipolar Supply)
Z
Current Source
OH
Parameter Symbol -90 -120 -150 Unit
Min Max Min Max Min Max
Write Cycle Time tAVAV tWC 90 120 150 ns Write Enable Setup Time tWLEL tWS 000ns Chip Select Pulse Width tELEH tCP 45 50 50 ns Address Setup Time tAVEL tAS 000ns Data Setup Time tDVEH tDS 45 50 50 ns Data Hold Time tEHDX tDH 000ns Address Hold Time tELAX tAH 45 50 50 ns Chip Select Pulse Width High tEHEL tCPH 20 20 20 ns Duration of Byte Programming Operation (1) tWHWH1 300 300 300 µs Sector Erase Time (2) tWHWH2 15 15 15 sec Read Recovery Time tGHEL 000µs Chip Programming Time 44 44 44 sec Chip Erase Time (3) 256 256 256 sec Output Enable Hold Time (4) t
OEH 10 10 10 ns
NOTES:
1. Typical value for t
WHWH1 is 7µs.
2. Typical value for t
WHWH2 is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
FIG. 4
RESET TIMING DIAGRAM
Page 6
6
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
FIG. 5
AC WAVEFORMS FOR READ OPERATIONS
Addresses
CS
OE
WE
Outputs
High Z
Addresses Stable
t
OE
t
RC
Output Valid
t
CE
t
ACC
t
OH
High Z
t
DF
Page 7
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White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
NOTES:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D
7 is the output of the complement of the data written to each chip.
4. D
OUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
FIG. 6
WRITE/ERASE/PROGRAM OPERATION, WE CONTROLLED
Addresses
CS
OE
WE
Data
5.0 V
5555H PA PA
t
WC
tCS
PD
D7
DOUT
tAH
tWPH
tDH
tDS
Data Polling
tAS
tRC
tWP
A0H
tOE
tDF
tOH
tCE
tGHWL
tWHWH1
Page 8
8
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
FIG. 7
AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS
NOTE:
1. SA is the sector address for Sector Erase.
Addresses
CS
OE
WE
Data
V
CC
5555H 2AAAH 2AAAH SA5555H 5555H
t
WP
t
CS
t
VCS
10H/30H55H80H55H AAHAAH
t
AH
t
GHWL
t
WPH
t
DH
t
DS
t
AS
Page 9
9
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
FIG. 8
AC WAVEFORMS FOR DATA POLLING DURING EMBEDDED ALGORITHM OPERATIONS
CS
OE
WE
t
OE
t
CE
t
CH
t
OH
D7
D7 =
Valid Data
High Z
D0-D6 = Invalid
D0-D7
Valid Data
t
DF
D7
D0-D6
t
OEH
t
WHWH 1 or 2
Data
Page 10
10
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
NOTES:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. D
7 is the output of the complement of the data written to each chip.
4. D
OUT is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
Addresses
WE
OE
CS
Data
5.0 V
5555H PA PA
t
WC
t
WS
PD
D
7
D
OUT
t
AH
t
CPH
t
CP
t
DH
t
DS
Data Polling
t
AS
t
GHEL
A0H
t
WHWH1
FIG. 9
ALTERNATE CS CONTROLLED PROGRAMMING OPERATION TIMINGS
Page 11
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White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
FIG. 10 ALTERNATE PIN CONFIGURATION FOR WF2M32I-XHX5
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-20 Address Inputs
WE Write Enable
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
RESET Reset
I/O
8
I/O
9
I/O
10
A
14
A
16
A
11
A
0
A
18
I/O
0
I/O
1
I/O
2
RESET
CS
2
GND
I/O
11
A
10
A
9
A
15
V
CC
CS
1
A
19
I/O
3
I/O
15
I/O
14
I/O
13
I/O
12
OE
A
17
WE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
7
A
12
NC
A
13
A
8
I/O
16
I/O
17
I/O
18
V
CC
CS
4
NC
I/O
27
A
4
A
5
A
6
A
20
CS
3
GND
I/O
19
I/O
31
I/O
30
I/O
29
I/O
28
A
1
A
2
A
3
I/O
23
I/O
22
I/O
21
I/O
20
11 22 33 44 55 66
1 12 23 34 45 56
TOP VIEW
BLOCK DIAGRAM
2M x 8
8
I/O
0-7
CS
1
2M x 8
8
I/O
8-15
CS
2
2M x 8
8
I/O
16-23
CS
3
2M x 8
8
I/O
24-31
CS
4
A0-
20
OE
WE
RESET
PIN DESCRIPTION
FIG. 11 ALTERNATE PIN CONFIGURATION FOR WF2M32U-XG2UX5
BLOCK DIAGRAM
TOP VIEW
The White 68 lead G2U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2U has the TCE and lead inspection advantage of the CQFP form.
2M x 8
8
I/O
0-7
2M x 8
8
I/O
8-15
2M x 8
8
I/O
16-23
2M x 8
8
I/O
24-31
A
0-20
OE
RESET
CS
WE
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
V
CC
A11A12A13A14A15A
16
CS
OE
NC
A
17
NCNCNC
A
18A19A20
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
RESET
A0A1A2A3A4A5NC
GNDNCWE
A6A7A8A9A10V
CC
I/O0-31 Data Inputs/Outputs
A0-20 Address Inputs
WE Write Enable
CS Chip Select OE Output Enable
VCC Power Supply
GND Ground
RESET Reset
0.940"
Page 12
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White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
PACKAGE 401: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H)
30.1 (1.185) ± 0.38 (0.015) SQ
25.4 (1.0) TYP
15.24 (0.600) TYP
0.76 (0.030) ± 0.1 (0.005)
6.22 (0.245) MAX
3.81 (0.150)
± 0.1 (0.005)
2.54 (0.100) TYP
25.4 (1.0) TYP
1.27 (0.050) ± 0.1 (0.005)
1.27 (0.050) TYP DIA
0.46 (0.018) ± 0.05 (0.002) DIA
PIN 1 IDENTIFIER
SQUARE PAD
ON BOTTOM
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Page 13
13
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U)
0.38 (0.015) ± 0.05 (0.002)
0.25 (0.010) ± 0.10 (0.002)
25.15 (0.990) ± 0.25 (0.010) SQ
1.27 (0.050) TYP
24.0 (0.946)
± 0.25 (0.010)
22.36 (0.880) ± 0.25 (0.010) SQ
20.3 (0.800) REF
23.87
(0.940) REF
1.01 (0.040)
± 0.13 (0.005)
0.25 (0.010) REF
1° / 7°
R 0.25
(0.010)
DETAIL A
SEE DETAIL "A"
Pin 1
0.53 (0.021) ± 0.18 (0.007)
3.51 (0.140) MAX
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
0.940" TYP
The White 68 lead G2U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2U has the TCE and lead inspection advantage of the CQFP form.
Page 14
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White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF2M32-XXX5
ORDERING INFORMATION
LEAD FINISH:
Blank = Gold plated leads A = Solder dip leads
V
PP PROGRAMMING VOLTAGE
5 = 5 V
DEVICE GRADE:
M= Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C
PACKAGE TYPE:
H = Ceramic Hex In line Package, HIP (Package 401) G2U = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 510)
ACCESS TIME (ns)
IMPROVEMENT MARK
• For HIP Package
Blank = 4CS and 4WE I = 4CS and 1WE, RESET
• For G2U Package
Blank = 4CS and 4WE U = 1CS and 1WE
ORGANIZATION, 2M x 32
User configurable as 4M x 16 or 8M x 8 (Except WF2M32U-XG2UX which is 32 bit wide only.)
Flash PROM
WHITE ELECTRONIC DESIGNS CORP.
W F 2M32 X - XXX X X 5 X
2M x 32 5V Flash Module 64KByte 150ns 66 pin HIP (H) 5962-97531 01HXX* 2M x 32 5V Flash Module 64KByte 120ns 66 pin HIP (H) 5962-97531 02HXX* 2M x 32 5V Flash Module 64KByte 90ns 66 pin HIP (H) 5962-97531 03HXX*
2M x 32 5V Flash Module 64KByte 150ns 68 lead CQFP/J (G2U) 5962-97531 01HXX* 2M x 32 5V Flash Module 64KByte 120ns 68 lead CQFP/J (G2U) 5962-97531 02HXX* 2M x 32 5V Flash Module 64KByte 90ns 68 lead CQFP/J (G2U) 5962-97531 03HXX*
DEVICE TYPE SECTOR SIZE SPEED PACKAGE SMD NO.
* Pending
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