Page 1
Dual Epitaxial Planer Transistor
W4601DW
1
2
3
6
5
4
Features:
* Both a 2SA1037AK chip and 2SC2412K chip in a SOT-363
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
Symbol
V
CEO
V
CBO
V
EBO
l
C
Thermal Characteristics
Tr
2
4
5
PNP+NPN
Tr
1
6
Value
50
-50
60
-60
7.0
-6.0
150
-150
1
2
3
SOT-363(SC-88)
Unit
Vdc
Vdc
Vdc
mAdc
Characteristics
Total Device Dissipation FR-5 Board,
T =25 ℃
A
Junction Temperature
Storage Temperature
1. FR-5 = 1.0 x 0.75 x 0.062 in
Device Marking
W4601DW = Z1
(1)
Symbol Max
P
D
T
J
Tstg
150
150
-55 to +150
Unit
mW
℃
℃
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Page 2
W4601DW
Electrical Characteristics (T
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage
(lC= 1.0mA)
(lC= -1.0mA)
Collector-Base Breakdown Voltage
(lC= 50 µA)
(lC= -50 µA)
Emitter-Base Breakdown Voltage
(lE= 50 µA)
(lE= -50 µA)
Collector Cutoff Current
(VCB= 60 V)
(VCB= -60 V)
Emitter Cutoff Current
(VEB= 7.0V)
(VEB= -6.0V)
=25 C unless otherwise noted)
A
Symbol
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
l
CBO
l
EBO
Min
50
-50
60
-60
7.0
-6.0
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
-
-
0.1
-0.1
0.1
-0.1
Unit
V
V
V
µA
µA
On Characteristics
DC Current Gain
(lC= 1.0 mA, VCE= 6.0V)
(lC= -1.0 mA, VCE= -6.0V)
Collector-Emitter Saturation Voltage
(lC= 50 mA, lB= 5.0mA)
(lC= 50 mA, lB= -5.0mA)
Small-Signal Characteristics
Current-Gain-Bandwidth Product
(VCE= 12.0 V, lE= -2.0mA, f = 100MHz)
(VCE= -12.0 V, lE= 2.0mA, f = 100MHz)
Output Capacitance
(VCE= 12.0V, f = 1.0MHz)
(VCB= -12.0V, f = 1.0MHz)
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
h
FE
V
CE(sat)
f
T
Cobo
120
120
-
-
-
-
-
-
-
-
-
180
140
2
- -
560
560
0.4
-0.5
-
-
3.5
5
V
MHz
P
f
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Page 3
W4601DW
Tr1 → 2SC2412K
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05-Sep-20113/7
Page 4
W4601DW
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05-Sep-20114/7
Page 5
W4601DW
Tr2 → 2SA1037AK
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05-Sep-20115/7
Page 6
W4601DW
F ig.16 C ollec tor-emitter s atur ation vo ltage vs .
collec tor curr ent (1)
–1
–0. 5
–0. 2
T =10 0 C
–0. 1
–0. 05
, CO LL EC TO R SATU R ATIO N VO LTAG E (V )
CE (s at)
V
–0. 2 –0. 5 –1 –2 –5 –1 0 –20 –50 –100
25 C
-40 C
I C, CO LL E CT OR C U RR E N T (mA)
I
/
=10
I
C
B
Fig. 18 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
C
ib
10
T =25 C
A
f=1MH z
I =0 A
E
I =0 A
C
F ig.17 G ain bandwidth pro duc t vs . emitter cur rent
1000
500
200
100
, TR ANS IT IO N F R E QU ENC Y (MHz )
r
f
50
–0. 2 –0. 5 – 1 – 2 –5 – 10 – 20 –50 –10 0
I E, E MITT E R C UR R E NT (mA)
T =25 C
A
V =-12 V
C E
C
ob
5
2
, CO LL E CT OR OU TP UT C AP AC IT ANC E (pF )
, E MITT E R IN PU T CA PA CIT AN CE (pF )
ob
ib
I
I
-1
-0. 5
, CO LL E CT OR T O B AS E V OL TA GE (V )
CB
V
, E MITT E R T O B AS E VO LT AG E (V)
E B
-2
-5 -10 -20
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05-Sep-20116/7
Page 7
W4601DW
SOT-363 Package Outline Dimensions
A
654
B
C
123
E
D
H
K
J
L
M
Dim
A
B
C
D
E
H
J
K
L
M
SOT-363
Min
0.10
1.15
2.00
0.65 REF
0.30
1.80
-
0.80
0.25
0.10
Unit:mm
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.10
0.40
0.25
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