Page 1
Epitaxial Planer Transistor Silicon NPN
Lead(Pb)-Free
P b
Features:
* Both 2SC2412K Chip x 2 in a SOT-363
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation TA=25˚C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Symbol Max
P
D
2
3
4
5
NPN+NPN
W4501DW
1
1
2
6
Value
50
60
7
150
380
SOT-363(SC-88)
6
5
4
3
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
Thermal Resistance, Junction to Ambient
Junction and Storage,Temperature
Device Marking
W4501DW=5H
Electrical Characteristics
Characteristics Symbol
(TA=25 C Unless Otherwise noted)
Off Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage (IC=50 uAdc, IE=0)
Emitter-Base B
reakdown Voltage (IE=50 uAdc, IC=0)
(2)
(IC=1.0mAdc,IB=0)
R
θ
T
J,Tstg
JA
-55 to +150
V(BR)CEO
V(BR)CBO
V(BR)EBO
328
Min Max
50
60
7.0
-
-
-
˚C/W
˚C
Unit
Vdc
Vdc
Vdc
Emitter Cutoff Cur
Collector Cutoff Current (VCB=60Vdc)
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.
2. Pulse
Test:PulseWidth 300uS, Duty Cycle 2.0%
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rent (VEB =7.0Vdc)
<
=
<
=
1/4
IEBO
ICBO
-
-
0.1
0.1
µAdc
µAdc
30-Nov-05
Page 2
W4501DW
Electrical Characteristics (T
=25 C unless otherwise noted) (Countinued)
A
Characteristics Symbol UnitMin Max
On Characteristics
DC Current Gain
(V
= 6.0Vdc, IC= 1.0mAdc)
CE
Collector-Emitter Saturation Voltage
(IC= 50mAdc, IB= 5.0mAdc)
Small-signal Characteristics
Current-Gain-Bandwidth Product
(VCE= 12 Vdc, IE= -2.0 mAdc, f=100MHz)
Output Capacitance
(V
= 12 Vdc, f=1.0MHz)
CE
Electrical Characteristics Curve
50
(mA)
20
C
10
5
2
1
0.5
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
COLLECTOR CURRENT : I
BASE TO EMITTER VOLTAGE : V
100
=
Ta
C
C
25
55 C
Fig.1 Grounded emitter propagation characteristics
V
CE
=6V
BE
(V)
h
FE
V
CE(sat)
f
T
Cobo
Typ
120
-
-
-
100
(mA)
C
COLLECTOR CURRENT : I
Ta=25˚C
80
60
40
20
0
0.4 0.8 1.2 1.6 2.00
COLLECTOR TO EMITTER VOLTAGE : V
-
-
180
2.0
Fig.2 Grounded emitter outputcharacteristics
560
0.4
-
3.5
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB =0A
CE
MHz
(V)
-
Vdc
P
F
10
(mA)
C
COLLECTOR CURRENT : I
Ta=25˚C
8
6
4
2
0
0
4 8 12 16
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter output characteristics
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30 A
27 A
24 A
21 A
18 A
15 A
12 A
9 A
6 A
3 A
IB=0A
20
(V)
CE
2/4
30-Nov-05
Page 3
W4501DW
500
FE
200
100
50
20
DC CURRENT GAIN : h
10
0.2
Ta=25 C
VCE=5V
3V
1V
0.5 1 2 5 10 20 5 0 100 200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs collector current
(V)
(sat)
CE
0.5
0.2
0.1
0.05
IC/IB=50
20
10
Ta=25 C
FE
500
200
100
Ta=100 C
25 C
55 C
50
20
VCE=
5V
DC CURRENT GAIN : h
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs collector current
(V)
0.5
CE(sat)
0.2
0.1
0.05
Ta=100 C
25 C
55 C
IC/IB=10
0.02
0.01
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig. 6 Collector-emitter saturation
COLLECTOR SATURATION VOLTAGE : V
(MHz)
T
500
200
100
TRANSITION FREQUENCY : f
50
voltage vs. collector current
Ta=25 C
V
CE
=6V
0.5 1 2 5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs emitter current
0.02
0.01
0.2
0.5 1 2 5 10 20 5 0 100 200
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
COLLECTOR SATURATION VOLTAGE : V
pF)
pF)
20
: Cib (
10
5
2
1
EMITTER INPUT CAPACITANCE
0.2 0.5 1 2 5 10 20 5 0
COLLECTOR TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER
voltage vs. collector current
Cib
Cob
TO
VOLTAGE :
BASE
Ta=25 C
f=1MHz
I
E
=0A
I
C
=0A
(V)
CB
(V)
V
EB
Fig.9 Collector output capacitance vs collector-base voltage
Emitter input capacitance vs emitter-base voltage
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30-Nov-05
Page 4
W4501DW
SOT-363 Package Outline Dimensions
A
6 5 4
B
C
1 2 3
E
D
H
K
J
L
M
Dim
A
B
C
D
E
H
J
K
L
M
SOT-363
Min
0.10
1.15
2.00
0.65 REF
0.30
1.80
-
0.80
0.25
0.10
Unit:mm
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.10
0.40
0.25
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30-Nov-05
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